CN1064177C - High-speed deepth-variable etching method and apparatus thereof - Google Patents
High-speed deepth-variable etching method and apparatus thereof Download PDFInfo
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- CN1064177C CN1064177C CN98101466A CN98101466A CN1064177C CN 1064177 C CN1064177 C CN 1064177C CN 98101466 A CN98101466 A CN 98101466A CN 98101466 A CN98101466 A CN 98101466A CN 1064177 C CN1064177 C CN 1064177C
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- etching
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- hurdle sheet
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Abstract
The present invention relates to a high-speed depth-variable etching method and a device thereof, determinate parameters are inputted into a microcomputer which controls the moving direction, working step number at a time, stay time and interrupt after a certain working step number, etc. of double beam barrier pieces according to self-compiling programs; a work instruction of a stepping motor driver controlled by a microcomputer running program is a simple switching value, and a beam barrier piece program controls the total time for exposing an ion beam of each small step to realize various etching processes of different depth variation properties. The present invention has the advantages of high speed, high accuracy and low cost.
Description
The present invention relates to the ion beam etching field, particularly degree of deepening ion etching fast.
Up to now, the ion beam etching of international and domestic manufacturing saw delay line device adopts the constant little slit Move Mode of width, the step of different depth is all wanted independent etching once, and each degree of depth of etching uses the depth function of the step match designing requirement of different depth to change.Since all to carve from the surface at every turn, the etch period of cost repetition, number of steps can not be very little in addition, and therefore this little slit etch mode is very time-consuming and high to the normal steady requirement of ion beam running parameter for making normal time delay device.
The lithographic method and the device thereof that the purpose of this invention is to provide a kind of new precision.
Concrete scheme of the present invention is: being made up of double-workpiece-table, bundle flashboard, line probe, bundle hurdle sheet, stepper motor, grating chi, ball screw, guide rail, aligning spacer, microcomputer etc. of degree of deepening etching device; This degree of deepening etching device adopts two double-workpiece-tables of hanging position formula vacuum chamber structure that can directly exchange, between ion source outlet and etching work stage, be provided with the bundle flashboard, the line probe is housed on the plate, aim at spacer and place the workpiece table top, two stepping motors by the ball screw of two covers on the guide rails each with can be connected by two-way mobile two-beam hurdle sheet, use this deepth-variable etching method, designing requirement according to device, the parameter amount of determining is inputed to microcomputer, and microcomputer is pressed the direction of motion of self-compiling program control two-beam hurdle sheet, the step number of each walking, the time of staying after certain step number of walking and interruption etc.; A certain continually varying depth profile is come match with the abundant degree of depth small stair of quantity, the walk mobility of each step of bundle hurdle sheet still keeps identical, it is constant promptly to restraint hurdle sheet stepping distance and synchronizing frequency, the speed that moves each step is identical, so it is simple switching value that stepper motor driver is subjected to the work order of microcomputer working procedure control, be in etch period integration that the step of different depth accepts and this step degree of depth require corresponding, thereby control the difference realization deep etching process that each small stair exposes the total time of ion beam by bundle hurdle sheet mobile process; The realization of this process is a basis
Mathematical Modeling realizes; Ion energy, ion beam current density, the ion beam incidence angle is certain and the effective beam diameter of ion beam greater than required etched features graphic length condition under, by the first bundle hurdle sheet 4a and the location of the second bundle hurdle sheet 4b and cooperatively interacting of moving, can realize the linearity and the nonlinear change of etching depth in institute's scope at quarter, wherein nonlinear change comprises that dull change in depth continuously or etching depth are decomposed into the continuous change in depth of two or more dullnesses.
Advantage of the present invention is: fast precise; Cost is low.
Reach embodiment below with reference to the accompanying drawings the present invention is done detailed elaboration.
Fig. 1 degree of deepening etching device schematic diagram;
Fig. 2 degree of deepening etching device part-structure figure;
Fig. 3 deepth-variable etching method Mathematical Modeling figure;
The bundle hurdle sheet working mode figure of Fig. 4～Figure 11 degree of deepening etching device.
Embodiment 1: the high-speed deepth-variable etching device be by double-workpiece-table 1, bundle flashboard 2, line probe 3, bundle hurdle sheet 4a, 4b, stepper motor 5, grating chi 6, ball screw 7, guide rail 8, aim at compositions such as spacer 9, microcomputer 10; Degree of deepening etching device adopts two double-workpiece-tables of hanging position formula vacuum chamber structure that can directly exchange, between ion source 12 outlets and etching work stage 1, be provided with bundle flashboard 2, line probe 3 is housed on the bundle flashboard 2, aiming at spacer 9 places on the print of workpiece table top, by two-beam hurdle sheet 4a, the normal width gap figure that forms between the 4b is with ion source 12 emission Ar
+Ion beam etches identical figure on aligning spacer 9, by determining center quadrature " ten " sign line orientation and position dimension difference effect standard and the location work stage that the relative workpiece table top of this normal width figure carves in advance; Two stepping motors 5 by the ball screw on the guide rail 87 respectively with can two-way mobile two-beam hurdle sheet 4a, 4b connects.At the input ion energy is 600eV; Beam current density is 0.8mA/cm
2With incident angle be under 0 ° of etching parameters condition; Quartzy (S: O
2) etch rate of material is 24nm/min; After the utilization deepth-variable etching method is carried out etching " beginning " instruction, bundle flashboard 2 begins to move, the second bundle hurdle sheet 4b is fixed in etching terminating point position B, the first bundle hurdle sheet 4a by etching initial point position A to etching terminating point B or by etching initial point position B to etching terminating point A uniform motion, carry out up to working procedure and to interrupt etching instruction bundles flashboard 2 to output time and return; Only moving the first bundle hurdle sheet 4a can etch by h
2=O～h
1Determine the linear variation diagram shape of the degree of depth of different slopes.H wherein
2The etching depth of expression terminating point; h
1The etching depth of expression starting point.
Embodiment 2: said apparatus and parameter constant, different is that the first bundle hurdle sheet 4a is fixed in etching terminating point position A, the second bundle hurdle sheet 4b, is carried out up to working procedure and to interrupt etching instruction bundles flashboard 2 to output time and return to etching terminating point position A or at the uniform velocity mobile to etching terminating point position B by etching start position A by etching initial point position B; Only moving the first bundle hurdle sheet 4a can etch by h
1=0～h
2Determine the linear variation diagram shape of the degree of depth of different slopes.H wherein
1The etching depth of expression terminating point; h
2The etching depth of expression starting point.
Embodiment 3: said apparatus and parameter constant, different is, and bundle flashboard 2 begins to move, the first bundle hurdle sheet 4a by etching initial point position A with V at the uniform velocity
1Shift to etching terminating point position C, the second bundle hurdle sheet 4b and first restraint hurdle sheet 4a synchronously by etching initial point position B with V at the uniform velocity
2Shift to etching terminating point position C, carry out up to working procedure and interrupt etching instruction bundles flashboard 2 to output time and return; According to V
1=V
2Or V
1≠ V
2Reach the different choice of etching terminating point position C, by two-beam hurdle sheet 4a, the segmentation of 4b is moved and is etched symmetry or asymmetric del change in depth figure.
Embodiment 4: said apparatus and parameter constant, different is, and bundle flashboard 2 begins to move, the second bundle hurdle sheet 4b by etching initial point position C with V at the uniform velocity
2Move to etching terminating point position A, after the interruption etching, bundle flashboard 2 returns, and the second bundle hurdle sheet 4b is retracted into position B; Bundle flashboard 2 begins to move once more, the first bundle hurdle sheet 4a by etching initial point position C with V at the uniform velocity
1Move to etching terminating point position B, carry out up to working procedure and interrupt etching instruction bundles flashboard 2 to output time and return; According to V
1=V
2Or V
1≠ V
2And to the different choice of etching initial point position C, by two-beam hurdle sheet 4a, 4b divides order to move to etch symmetry or asymmetric equilateral triangle change in depth figure.
Embodiment 5: said apparatus and parameter constant, different is that bundle flashboard 2 begins to move, the second bundle hurdle sheet 4b is fixed in etching terminating point position B, the first bundle hurdle sheet 4a, is carried out up to working procedure and to interrupt etching instruction bundles flashboard 2 to output time and return to etching terminating point B or non-at the uniform velocity mobile to etching terminating point A by etching initial point position B by etching initial point position A; Only move the figure that the first bundle hurdle sheet 4a can etch degree of depth monotone variation.
Embodiment 6: said apparatus and parameter constant, different is that bundle flashboard 2 begins to move, the first bundle hurdle sheet 4a is fixed in etching terminating point position A, the second bundle hurdle sheet 4b, is carried out up to working procedure and to interrupt etching instruction bundles flashboard 2 to output time and return to etching terminating point A or non-at the uniform velocity mobile to etching terminating point B by etching initial point position A by position etching starting point B; Only move the figure that the second bundle hurdle sheet 4b can etch degree of depth monotone variation.
Embodiment 7: said apparatus and parameter constant, different is, and bundle flashboard 2 begins to move, the first bundle hurdle sheet 4a by etching initial point position A with speed V
1(x) travelling backwards is to etching terminating point position C, the second bundle hurdle sheet 4b by etching initial point position B with speed V
2(x) shift to etching terminating point position C synchronously, carry out up to working procedure and interrupt etching instruction bundles flashboard 2 to output time and return; By two-beam hurdle sheet 4a, 4b etches the figure of center symmetry or asymmetrical concave curve profile with the selection of moved further and etching start position C.
Embodiment 8: said apparatus and parameter constant, different is, and bundle flashboard 2 begins to move, the first bundle hurdle sheet 4a by etching initial point position C with speed V
1(x) shift to etching terminating point position B, after the interruption etching, bundle flashboard 2 returns, the first bundle hurdle sheet 4a is retracted into position A, and the second bundle hurdle sheet 4b moves to etching initial point position A, recovers former etching state, the bundle flashboard 2 begin to move, second the bundle hurdle sheet 4b by etching initial point position C with speed V
2(x) shift to etching terminating point position A, carry out up to working procedure and interrupt etching instruction bundles flashboard 2 to output time and return; By two-beam hurdle sheet 4a, 4b divides order to move selection with etching start position C, etches the figure of center symmetry or asymmetrical crest curve profile.
Claims (12)
1. deepth-variable etching method, it is characterized in that designing requirement according to device, the parameter amount of determining is inputed to microcomputer (10), microcomputer (10) is pressed self-compiling program control two-beam hurdle sheet (4a, the time of staying after the step number of direction of motion 4b), each walking, the certain step number of walking and interruption etc.; A certain continually varying depth profile is come match with the abundant degree of depth small stair of quantity, bundle hurdle sheet (4a, 4b) the walk mobility of each step still keeps identical, it is constant promptly to restraint hurdle sheet stepping distance and synchronizing frequency, the speed that moves each step is identical, so it is simple switching value that stepper motor driver is subjected to the work order of microcomputer (10) working procedure control, the etch period integration that is in the step acceptance of different depth requires corresponding with this step degree of depth, thereby by bundle hurdle sheet (4a, 4b) mobile process is controlled the difference that each small stair exposes the total time of ion beam and is realized degree of deepening etching process; The Mathematical Modeling that realizes this process is
In the formula: Di or Di-1 represent the degree of depth of i or i-1 small stair;
L represents etched features figure total length;
E
RThe etch rate of representing certain material;
A represents that the equal length small stair cuts apart number;
△ x represents to restraint the hurdle sheet and moves the stepping distance;
Fp represents the step motor drive pulse frequency; Ion energy, ion beam current density, the ion beam incidence angle is certain and the effective beam diameter of ion beam greater than required etched features graphic length condition under, by the first bundle hurdle sheet (4a) and the location of the second bundle hurdle sheet (4b) and cooperatively interacting of moving, can realize the linearity and the non-linear change in depth of etching in institute's etching scope, wherein the etching depth nonlinear change comprises that dull variation continuously of etching depth or etching depth can be decomposed into two or more dullnesses and change continuously.
2. deepth-variable etching method according to claim 1, it is characterized in that the above-mentioned second bundle hurdle sheet (4b) is fixed in etching terminating point position (B), the first bundle hurdle sheet (4a) by etching initial point position (A) to etching terminating point (B) or conversely by etching initial point position (B) to etching terminating point (A) uniform motion, carry out up to working procedure and to interrupt etching instruction bundles flashboard (2) to output time and return; Only moving the first bundle hurdle sheet (4a) can etch by h
2=0～h
1Determine the linear variation diagram shape of the degree of depth of different slopes, wherein h
2The etching depth of expression terminating point; h
1The etching depth of expression starting point.
3. deepth-variable etching method according to claim 1, it is characterized in that the above-mentioned first bundle hurdle sheet (4a) is fixed in etching terminating point position (A), the second bundle hurdle sheet (4b), is carried out up to working procedure and to be interrupted etching instruction bundles flashboard (2) to output time and return to etching terminating point position (A) or at the uniform velocity mobile to etching terminating point (B) by etching initial point position (A) conversely by etching initial point position (B); Only moving the second bundle hurdle sheet (4b) can etch by h
1=O～h
2Determine the linear variation diagram shape of the degree of depth of different slopes, wherein h
1The etching depth of expression terminating point; h
2The etching depth of expression starting point.
4. deepth-variable etching method according to claim 1, it is characterized in that the above-mentioned first bundle hurdle sheet (4a) by etching start position (A) with V at the uniform velocity
1Shift to etching terminating point position (C), the second bundle hurdle sheet (4b) with the first bundle hurdle sheet (4a) synchronously by etching initial point position (B) with V at the uniform velocity
2Shift to sheet etching terminating point position, two-beam hurdle (C), according to V
1=V
2Or V
1≠ V
2And the different choice of etching terminal position (C), (4a, segmentation 4b) is moved and is etched symmetry or asymmetric del change in depth figure by two-beam hurdle sheet.
5. deepth-variable etching method according to claim 1, it is characterized in that the above-mentioned second bundle hurdle sheet (4b) by etching initial point position (C) with V at the uniform velocity
2Move to etching terminating point position (A), after the interruption etching, bundle flashboard (2) returns, with second bundle hurdle sheet (4b) retracted position (B); Bundle flashboard (2) moves once more, the first bundle hurdle sheet (4a) by etching initial point position (B) with V at the uniform velocity
1Move to etching terminating point position (B), according to V
1=V
2Or V
1≠ V
2And the different choice of etching initial point position (C), (4a 4b) divides order to move and etches symmetry or asymmetric equilateral triangle change in depth figure by two-beam hurdle sheet.
6. deepth-variable etching method according to claim 1, it is characterized in that the above-mentioned second bundle hurdle sheet (4b) is fixed in etching terminating point position (B), the first bundle hurdle sheet (4a) to etching terminating point (B) or non-at the uniform velocity mobile to etching terminating point (A) by etching initial point position (B), only moves the figure that the first bundle hurdle sheet (4a) can etch degree of depth monotone variation by etching initial point position (A).
7. deepth-variable etching method according to claim 1, it is characterized in that the above-mentioned first bundle hurdle sheet (4a) is fixed in etching terminating point position (A), the second bundle hurdle sheet (4b) to etching terminating point (A) or non-at the uniform velocity mobile to etching terminating point (B) by etching initial point position (A), only moves the figure that the second bundle hurdle sheet (4b) can etch degree of depth monotone variation by etching initial point position (B).
8. deepth-variable etching method according to claim 1, it is characterized in that above-mentioned first the bundle hurdle sheet (4a) by etching initial point position (A) with speed V
1(x) shift to etching terminating point position (C) synchronously, second the bundle hurdle sheet (4b) by etching initial point position (B) with speed V
2(x) shift to etching terminating point position (C), (4a 4b) etches the figure of center symmetry or asymmetrical concave curve profile to two-beam hurdle sheet with moved further.
9. deepth-variable etching method according to claim 1, it is characterized in that above-mentioned first the bundle hurdle sheet (4a) by etching initial point position (C) with speed V
1(x) move to etching terminating point position (B), after the interruption etching, bundle flashboard (2) returns, and the first bundle hurdle sheet (4a) is retracted into etching initial point position (A); The second bundle hurdle sheet (4b) moves to position (C), recovers former etching state; Second the bundle hurdle sheet (4b) by etching initial point position (C) with speed V
2(x) move to etching terminating point position (A), (4a 4b) divides order to move selection with etching start position (C), etches the figure of center symmetry or asymmetrical crest curve profile by two-beam hurdle sheet.
10. degree of deepening etching device, this device by etching workbench (1), bundle flashboard (2), line probe (3), bundle hurdle sheet (4a, 4b), stepping motor (5), grating chi (6), ball screw (7), guide rail (8), aim at spacer (9), microcomputer compositions such as (10); It is characterized in that degree of deepening etching device adopts the two etching work stage (1) of hanging position formula vacuum chamber structure that can directly exchange, between ion source (12) outlet and etching work stage (1), be provided with bundle flashboard (2), line probe (3) is housed on the bundle flashboard (2), aiming at spacer (9) places on the workpiece table top, by two-beam hurdle sheet (4a, the normal width gap figure that forms 4b) is used from Yu Yuan (12) emission Ar
+Ion beam etches identical figure aiming on the spacer (9), by determining center quadrature " ten " the sign line orientation that the relative workpiece table top of this figure carves in advance and the difference calibration and the location work stage of position dimension; Two stepping motors (5) by the ball screw (7) on the guide rail (8) respectively with can two-way mobile two-beam hurdle sheet (4a 4b) connects.
11. degree of deepening etching device according to claim 10, (4a, the half-angle of port center drift angle 4b) are between 50 °～44 °, and material is for comprising metal, nonmetal oxide or other solid substrates to it is characterized in that described two-beam hurdle sheet.
12. degree of deepening etching device according to claim 10 is characterized in that described aligning spacer (9) is of a size of 20 * 40 * 0.5mm
3Potsherd or K9 optical glass, the thick metallic film of sputtering sedimentation 300nm on it has center normal alignment mark line on film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98101466A CN1064177C (en) | 1998-05-13 | 1998-05-13 | High-speed deepth-variable etching method and apparatus thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98101466A CN1064177C (en) | 1998-05-13 | 1998-05-13 | High-speed deepth-variable etching method and apparatus thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1209645A CN1209645A (en) | 1999-03-03 |
| CN1064177C true CN1064177C (en) | 2001-04-04 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98101466A Expired - Fee Related CN1064177C (en) | 1998-05-13 | 1998-05-13 | High-speed deepth-variable etching method and apparatus thereof |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939811B2 (en) * | 2002-09-25 | 2005-09-06 | Lam Research Corporation | Apparatus and method for controlling etch depth |
| CN104966682B (en) * | 2015-07-10 | 2017-11-28 | 中国科学技术大学 | A kind of machined parameters during ion beam etching determine method |
| US10790155B2 (en) * | 2018-06-27 | 2020-09-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of manufacturing semiconductor devices |
| KR102162260B1 (en) * | 2018-10-22 | 2020-10-06 | 세메스 주식회사 | Guide pin, unit for supporting photo mask with the guide pin, and apparatus for cleaning photo mask with the guide pin |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4097825A (en) * | 1977-01-05 | 1978-06-27 | Hughes Aircraft Company | Surface acoustic wave tapped delay line |
| US4457803A (en) * | 1981-12-18 | 1984-07-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Processing method using a focused ion beam |
-
1998
- 1998-05-13 CN CN98101466A patent/CN1064177C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4097825A (en) * | 1977-01-05 | 1978-06-27 | Hughes Aircraft Company | Surface acoustic wave tapped delay line |
| US4457803A (en) * | 1981-12-18 | 1984-07-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Processing method using a focused ion beam |
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| Publication number | Publication date |
|---|---|
| CN1209645A (en) | 1999-03-03 |
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