CN1166890A - 具有iii族氮化物有源层和延长寿命的垂直几何结构的发光二极管 - Google Patents
具有iii族氮化物有源层和延长寿命的垂直几何结构的发光二极管 Download PDFInfo
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Abstract
发射可视光谱中蓝光的具有延长寿命特征的发光二极管(20)。它包括：导电SiC衬底(21)；在此衬底上的欧姆接触(22)；在衬底上的导电缓冲层(23)，其组成选自GaN、AlN、InN、分子式为AxB1-xN的III族的三元系氮化物且其中A与B为III族中元素而x是0或1或0与1之间的小数、SiC与此III族三元系氮化物的合金；以及双异质结构(24)，它包括在缓冲层上的p-n结，其中的有源层(25)与异质结构层(26，27)选自III族的二元系氮化物与三元系氮化物所构成的组。
Description
本发明涉及光电子器件，更具体而言涉及到能在电磁波谱的蓝至紫外部分产生输出的III族(指元素周期表中的III族)氮化物形成的发光二极管。
发光二极管(LED)为p-n结器件，这类器件随着光电子器件领域近年来的发展壮大已获得种种应用。于电磁波谱可见光部分发射的这类器件已用作简单的状态指示器、动态功率水平的柱状图显示，以及用在声频系统、汽车、家用电子器件与计算机系统和许多其它方面的字母数字显示装置中。红外部分的这类器件已与光谱上相匹配的光电晶体管相结合，已用于光隔离器、手持式遥控器，以及中断式、反射式和纤维光学式的传感应用中。
LED是根据半导体中电子与空穴的复合而工作的，当导带中的电子载流子与价带中的空穴相结合，它以发射光子，即发光的形式损失等于带隙的能量。在平衡状态下的复合的数目不足以作实际应用但是可以通过提高少数载流子密度使其增强。
在LED中，传统上是通过对其加正向偏压来提高少数载流子密度。注入的少数载流子以发光方式在结边缘的几个扩散长度上同多数载流子复合。每个复合作用都产生电磁辐射即光子。由于这种能量损耗与半导体材料的带隙有关，已认识到LED材料的带隙特性是很重要的。
但是，与其它电子器件相同，都希望和需要有更有效的LED，特别是能消耗较少功率而在较高亮度下工作的LED。高亮度的LED例如对于在各种高周围环境下的显示装置或状态指示器是特别有用的。在LED的亮度输出和驱动此LED所需用的功率之间存在某种关系。低功率的LED特别适用于例如各种便携式的电子设备中。试图满足高亮度、低功率和效率更高的LED的需要的例子，可以参看研究AlGaAs LED技术以用于可见光谱红光部分的LED的过程。对于能在可见光谱的蓝光区和紫外区发射的LED存在着类似的增长需求。例如，因为蓝色是原色，故为了产生全色显示或纯粹的白光，它的存在不仅是所希望的甚至是必须的。
本专利申请的共同受让人是第一次在此领域内成功地开发了能用工业方法来大量生产可见光LED，以及在蓝色光谱区发射光的LED。这些LED是用具有宽带隙的半导体材料碳化硅形成的。此种蓝LED的例子已在Edmond的各以“由碳化硅形成的发蓝光二极管(Blue Light EmittingDiode Formed In Silicon Carbide)”为题的美国专利4918497号和5027168号描述过。
此种蓝色LED的其它例子则描述于Nakamura等的“制造p型化合物半导体的方法(Method of Manufacturing P-Type CompoundSemiconductor)”(美国专利5306662号)以及Nakamura的“基于氮化镓化合物半导体的晶体生长方法(Crystal Growth Method For GalliumNitride-Based Compoud Semiconductor)”(美国专利5273933号)中。Hatano等的美国专利5273933号：“在制造半导体器件过程中形成薄膜的汽相生长方法(Vapor Phase Growth Method Of Forming Film InProcess Of Manufacturing Semiconductor Device)”中，也描述到由SiC衬底上的GaInAlN所形成的LED以及由砷化镓(GaAs)衬底上的硒化锌(ZnSe)所形成的LED。
正如熟悉LED之类光子器件的人所知道的，电磁辐射(即光子)的能够由一定半导体材料产生的频率乃是此材料带隙的函数。较小的带隙产生较低的能量和较长波长的光子，而为了产生较高的能量和较短波长的光子则需要较宽带隙的材料。例如，普遍用于激光器的一种半导体是铟镓铝的磷化物(InGaAlP)。由于这种材料的带隙(实际上带隙范围)取决于其中各元素的克分子份数或原子份数，InGaAlP能够产生的光限于可见光谱的红光部分，即相应的波长约为600～700nm。
在以后的工作中，为了产生具有在蓝光和紫外光谱部分波长的光子，则需要有较大带隙的半导体材料。典型的候选的材料包括碳化硅(SiC)与氮化镓(GaN)。
较短波长的LED除颜色之外还能提供许多优点。特别是在用于光存储器件(例如“CD-ROM”或“光盘”)时，它们的较短波长就能使这类存储器件按比例地存储更多的信息。例如用蓝光存储信息的光学器件就能在同样空间内存储约32倍于用红光时所能存储的信息量。
但是GaN则是由于它的较高的带隙(在室温时为3.36eV)，和由于它是直接的而不是间接的带隙材料，成为用于蓝光与UV(紫外)频带的有吸引力的LED候选材料。正如熟悉半导体特性的人所知，直接带隙材料乃是电子从价带跃迁到导带时不需为此电子改变晶体内动量的材料。在间接型半导体中则是另一种情形，即为了使电子在价带与导带间跃迁需要改变晶体内动量。硅与碳化硅则是这类间接型半导体的例子。
一般地说，由直接带隙材料形成的LED会比由间接带隙材料形成的LED有更高的效率，这是因为从直接跃迁产生的光子比来自间隙跃迁的光子保持有较多的能量。
但是GaN则苦于另一种缺点：至今还缺乏任何可行的技术用来生产能为GaN光子器件形成适当衬底的GaN体单晶。熟悉半导体器件的人周知，这类器件都需要某种结构衬底。典型的情形是，由与器件有源在相同材料形成的衬底能给出许多显著的优点，特别是在晶体生长与匹配方面上。但由于GaN至今仍必须取这种体晶形式，GaN光子器件就必须在不同于GaN的衬底上的外延层内形成。
但是，采用不同的衬底又会带来其它一些问题，尤其是在晶格匹配方面。几乎是在所有情形下，不同的材料就会有不同的晶格参数。结果，当GaN外延层生长在不同的衬底上时，就会发生某种程度的晶体失配，在这种失配下形成的外延层称作为“有应变的外延层”。这些失配以及由此产生的应变就会造成晶体缺陷，随之便会影响晶体与结的电子特性，相应地将影响甚至阻碍光子器件实现其功能。这类缺陷在高功率的结构中尤其成为问题。
迄今用于GaN器件的最普通衬底同时也是用于GaN的LED的唯一衬底乃是蓝宝石即氧化铝(Al2O3)。蓝宝石能透过可见与紫外波段的光，但不幸的是绝缘体而非导体，与GaN的晶格失配约为16％。在缺乏导体衬底时，不能形成“垂直”器件(在相对侧上带有接点的器件)，这样就使此种器件的制造和应用都复杂化了。
特殊的一种缺点是，水平结构(接触位于器件同一侧上的结构)，例如GaN形成于蓝宝石上所要求的这类结构，会产生水平电流而使通过该层中的电流密度显著增大。这一水平电流使已发生应变(即16％的晶格失配)的GaN一蓝宝石结构进一步产生应变，加速结与器件整体的性能下降。
GaN还带有与氮化铝(AlN)约2.4％的晶格失配以及与碳化硅(SiC)约3.5％的晶格失配。SiC与AlN的晶格失配较小，只约为1％。
III族的三元和四元系氮化物(例如InGaN、InGaAlN等)已证明具有较宽的带隙，从而有可能用于蓝光和紫外光的半导体激光器。但是绝大部分这类化合物存在有与GaN相同的难点：缺乏一致的单晶衬底。这样，它们都必须以生长在不同衬底上的外延层形式应用。因此，它们便有相同的晶体缺陷和相关的电气问题。
为此，本发明的目的之一即在于提供这样一种发光二极管，它能在电磁波谱的蓝光与紫外部分发射，能以最有利于这类器件的垂直几何结构形成，具有优异的亮度与效率，与现有的这类二极管相比能显示出较好的物理性能与长的电子寿命。
本发明是以这样的发光二极管来实现上述目的的，这种发光二极管是凭借它的优越的材料与结构而在可见光谱的蓝光部分发射并具有长寿命的特征。此发光二极管包括：导电的SiC衬底；SiC衬底的欧姆接触；衬底上的导电缓冲层，所用材料选自GaN、AlN、InN、III族的具有分子式AxB1-xN的三元系氮化物，其中A与B是III族中的元素而x是0、1或0与1间的小数、III族的具有分子式AxByC1-x-yN的四元系氮化物，其中A、B与C是III族中的元素而x与y是0、1或0与1间的小数且x+y＜1，以及SiC与这种三元系和四元系的III族氮化物的合金；和在上述缓冲层上具有P-N结的双异质结构，这里的有源层与异质结构层所用材料选自III族的二元系、三元系与四元系氮化物以及SiC与这种氮化物的合金。
本发明上述的和其它的目的、优点与特点以及实现它们的方式，将通过本发明在下面结合用来阐明其优选和有代表性实施形式的附图所作的详细说明，使人们获得更清楚的理解，在附图中：
图1示意地表明了本发明的长寿命发光二极管第一实施例的垂直剖面图；
图2示意地表明了本发明的长寿命发光二极管第二实施例的垂直剖面图；
图3示意地表明了本发明的长寿命发光二极管第三实施例的垂直剖面图；
图4示意地表明了本发明的长寿命发光二极管第四实施例的垂直剖面图；
图5以曲线图表明了先有技术的发光二极管与本发明的发光二极管相比较的相对强度随时间的变化；
图6的曲线图表明了用于本发明发光二极管中的SiC衬底上GaN层的双晶体x射线摆动曲线；
图7以曲线图示明了本发明的长寿命发光二极管中所用SiC衬底上GaN层的光致发光与能量输出的比较；
图8以曲线图表明了SiC-AlN-GaN合金的强度对动能之比；而
图9以曲线图表明了在本发明的SiC-AlN-GaN合金中作为SiC浓度的函数的晶格峰值能量。
本发明的内容是能产生蓝光且具有长寿命特性的发光二极管。正如熟悉这类发光二极管的性能，特征与额定值的人所周知，寿命一般定义为LED的输出将降低至其初始输出约50％时所经时间。
图1是本发明的发光二极管的示意性横剖图，概括地以标号20指明。此二极管包括有导电的SiC衬底21，它在优选实施例中是单晶SiC衬底。内行的人都知道，高质量的单晶衬底能提供许多结构上的优点，而这些优点本身又能给出性能和寿命方面的显著优点。在优选实施例中，SiC衬底可以由美国专利4866005号(现在为再颁专利_______号)所述的方法形成，该项专利与对应的未决申请共同转让。
在上述SiC衬底上形成了欧姆接触22，它是本发明的能立即与这里所论材料的先有技术二极管相区别的特征。正如前面已指出的，GaN的典型衬底是蓝宝石，蓝宝石不能作成导电的，因而不能同欧姆接触相连。这就妨碍了基于蓝宝石的器件能形成最适用于LED和许多其它器件的垂直结构。
从图1中还可看到，LED20包括有在衬底21上的缓冲层23。此缓冲层所用材料选自GaN、AlN、InN、分子式为AxB1-xN的III族三元系氮化物，其中A与B为III族中的元素而x为0或1或0与1之间的小数、分子式为AxByC1-x-yN的III族四元系氮化物，其中A与B与C是III族中的元素而x与y为0或1或是0与1之间的小数且x+y＜1、以及SiC与上述III族的三元和四元系氮化物的合金。缓冲层23与衬底21都是导电的。
LED20还包括由括号24标明的双异质结构，而在缓冲层23上还特别包括有p-n结。结构的名称“双异质结构”是按本项技术中共同和周知的方式使用的。这类结构的各个方面例如已在Sze，《半导体器件物理》，第二版(1981)，708-710页中论述过。上述几页上的Sze讨论涉及到激光器，但是阐明了同质结构、单异质结构与双异质结构结的性质及其区别。
在图1所示实施例中，双异质结构24还包括有源层25以及与之相邻的上、下异质结构层26、27。形成异质结构层26和27的组成最好选为GaN、AlN、InN、分子式为AxB1-xN的III族三元系氮化物而其中A和B是III族中的元素且x是0或1或0与1之间的小数、以及SiC与上述III族的三元系氮化物例如(SiC)xAyB1-yN。换一种说法，最下面的异质结构层将在缓冲层的顶部上。在图1中，作为下面的异质结构27示明在缓冲层23的顶部之上。
可将欧姆接触30加在上部异质结构层26之上来实现本发明优越的垂直结构。这种欧姆接触最好是由Al、Au、Pt或Ni之类金属形成，但正如内行的人所熟知，也可由其它材料形成。
在这里所示明的各个实施例中，所述双异质结构包括的有源层的组成选自下述这组材料：GaN、AlN、InN、分子式为AxB1-xN的III族三元系氮化物且其中A与B为III族中元素，而x是0或1或0与1之间的小数、以及SiC与这种III族三元系氮化物的合金。
在图1所示异质结构24中，有源层25最好能包括铟镓氮化物，而上与下异质结构层26与27则最好包括铝镓氮化物，更确切地说，铝镓氮化物异质结构层26与27最好具有分子式AlxGa1-xN，其中x是0、1或0与1间的小数。当有源层25包括铟镓氮化物时，这样的组成应理解为InzGa1-nZ，其中是z是0与1间的小数。
内行的人知道，III族的三元系氮化物的组成能够影响其折射率与带隙，一般地说，较大比例的铝会加大带隙和降低折射率。于是，在优选实施例中，为使异质结构层26与27所具带隙大于有源层25的带隙而所具折射率小于有源层25的折射率，是使层26与27比有源层25具有较高的原子或克分子百分数的铅。层26与27的较大带隙有助于电子通过有源层25注入而使器件的效率提高。类似地，层26和27的低折射率则有助于光从有源层25择优地射向光学基准(optical basis)。
为了形成p-n结，上与下异质结构层26与27具有相互相反的导电类型，而有源层25的导电类型则与这两个异质结构层中之一的相同。例如在一优选实施例中，上异质结构层26是p型，有源层25是n型，下异质结构层27是n型，而缓冲层与SiC衬底都是n型。这样就在有源层25与上异质结构层26之间形成了p-n结。
图2示明本发明稍有不同的一个实施例，概括地以标号32指明。与上述实施例相同，此LED包括SiC衬底33及其欧姆接触34。双异质结构以括号35标明。在图2的实施例中，缓冲层示明于36处且包括GaN，此整个结构还包括有在GaN缓冲层36与双异质结构35之间的缓冲层上的GaN外延层37。在双异质结构35上的欧姆接触40完成这种器件的有利的垂直结构。
后面将对这种二极管的特定性能参数加以讨论，但在这里预先指出，在以上和其余附图中所述的二极管预期于室温和50毫安正向偏压电流下工作时会有超过10000小时的寿命，而于室温和30毫安正向偏压电流下工作时则会有超过10000小时的寿命。熟悉这类器件的人将知上述性能已大大超过了现有器件的寿命。
图3示明了本发明的概括以42标明的第三实施例。与以前各实施例相同，二极管42包括SiC衬底43以及衬底43上的欧姆接触44。双异质结构由括号45标明，在它上面形成了欧姆接触46。但在此实施例中，缓冲层分别包括第一层47与第二层48。第一层47是在衬底43上，由碳化硅铝镓氮化物(SiC)xAlyGa1-yN的缓变组成形成，其中与衬底43相邻的部分基本上完全为SiC，而与此衬底相距最远的部分则基本上完全为铝镓氮化物，而在这两者之间的部分则在含量上从主要是碳化硅到主要是铝镓氮化物渐次缓变。
第二层48是在第一层47之上，同时是由铅镓氮化物的另一缓变组成形成。在优选实施例中，此缓变的第二层48的组成是在层47和48汇合处与第一缓冲层47的组成相匹配的组成缓变地变到与双异质结构45最下层的组成相匹配的组成。
在图3中，此缓冲层还可以描述为具有至少一层碳化硅与III族氮化物的缓变层，其中此缓变层在与衬底的界面上是碳化硅，而后逐渐变到在与双异质结构界面处同双异质结构最下层组成相匹配的组成。
本发明还在双异质结构中有源层之上设有使应变最小化的接触层(未示明)，同时此接触层所具的晶格常数基本上与各缓冲层的相同。这种使应变最小化的接触层已在Edmond和Bulman的与本申请同时提出的申请：“带有III族氮化物有源层的低应变激光器结构”中说明，此项申请与本申请共同转让，其内容已完全综合于本申请中作为参考。概括地说，这种多层结晶器件的总的应变是基于各层晶格常数间差的各应变平均值的函数。这样，通过增设晶格常数与缓冲层基本相同的层，各应变的加权平均就会较为一致而减小了总的应变。
另一些细节中还包括，SiC衬底的上表面在任何实施例中都可由铝掺杂来促进晶体生长。正如已述及的，各实施例中的衬底与缓冲层是导电的，这通常是对各层添加适当掺杂剂来实现。SiC衬底可以从SiC多种类型中的若干种特别是包括3C、4H、6H和15R这几种晶型中选取。
图4示明了本发明的概括以50标明的另一实施例。此LED50形成于SiC衬底51之上，紧接衬底51的上面形成有以括号52标明的缓冲层。缓冲层的材料选自GaN、AlN、InN、分子式为AxB1-xN的III族三元系氮化物而其中A和B是III族中的元素，且x是0或1或0与1之间的小数、以及SiC与这种III族三元系氮化物的合金。III族氮化物的第一层53形成在缓冲层52之上并具有第一导电类型。III族氮化物的第二层54形成在第一层53之上并具第二导电类型，使得此第一层53与第二层54形成p-n结器件。在第二层54之上形成欧姆接触55而在SiC衬底上形成欧姆接触56，使得通过以第一与第二欧姆接触供给该p-n结器件的电流由此产生高强度的光输出。
如图4中虚线所示，缓冲层52最好包括在衬底51上的第一层57，此第一层是由碳化硅铅镓氮化物的缓变组成形成，其中与衬底相邻的部分基本上完全是碳化硅，与衬底相距最远的部分基本上完全是铝镓氮化物，而在这中间的部分则在含量上由主要是碳化硅逐渐缓变到主要是铅镓氮化物。
在第一层57之上的第二缓冲层58则主要由铝镓氮化物的缓变组成形成。如同相对于以前实施例所述，此缓变的第二层58的组成也是从与缓冲层58和57汇合处第一缓冲层57的组成相匹配的组成起，渐次地缓变到与此二极管下部的III族氮化物层53的组成相匹配的组成。
在图4所示二极管50中，氮化物层53与54选自GaN、AlN、InN、分子式为AxB1-xN的III三元系氮化物而其中A与B是III族中的元素且x是0或1或0与1之间的小数、以及SiC与此种III族三元系氮化物的合金。应知在这一实施例和以前的实施例中，所述的结可以是同质、单异质或双异质结构的。
另外，缓冲层52也可以包括位于SiC衬底51上由SiC形成的下部中间层57和位于层57之上由氮化物合金形成的上部中间层58。
上述缓冲层可以包括SiC与III族氮化物的至少一层缓变层，此缓变层在与衬底51邻接的界面处是SiC，而在与结的结构邻接的界面处的组成则与有源层中最下层的组成匹配。
与前述实施例相同，这里的发光二极管可以具有以铝掺杂的SiC衬底的上表面。
这里，同参考其它一些图的讨论相似，本发明的晶体特性普遍优于任何先有器件所显示的任何特性。例如，本发明的在SiC上生长的GaN的双晶体x射线的摆动曲线具有约85弧秒的半亮度(图6)。
如上所述，LED的寿命定义为LED的光输出减少到只约为其初始光输出的50％时所经过的时间。正如前面读到过的，图5以曲线图表明了由蓝宝石上GaN形成的先有技术的LED与本发明的LED的相对强度随时间的变化。图5清楚地表明了本发明的LED在寿命上有了显著的改进。这两种器件都在50毫安下进行过老化。
如图5所示，经过长时间地给本发明的LED供电后，在长达10000小时或更长的时间后，此LED继续有高强度的光输出，即大于约90％的初始光强的输出，这远大于在蓝宝石上GaN的那种LED在经过共达1000小时的老化后只约有55％初始光强输出的情形。在图5中，虚线表明了根据已充分了解的SiC上SiC的性能所预期的SiC上GaN的性能。
应用传统的工艺，氮化物合金常难以在SiC上作二维生长，这主要是由于这两种材料的表面能之差所致。具体地说，传统的生长技术在较高的(即高于1000℃)温度下常会在SiC衬底的上表面上造成三维生长。这种三维生长会进展到这样的程度：在衬底的上表面上形成小的个别的半导体材料岛，使表面覆盖度极不充分。这些岛的进一步生长仍然是三维形式的，形成了非常粗糙的生长状态的氮化物合金表面。但在较低的温度下，即低于1000℃时，在SiC衬底表面上可以以极高的密度生长出极其小的氮化物合金岛。在常规的生长温度下经过很短时间的进一步生长后，这些岛便结合成覆盖住此衬底的几乎整个上表面。在此表面上进一步生长的则是在氮化物合金上的氮化物合金的生长，且主要是二维横向生长。这样就获得了氮化物合金的薄膜的镜面生长状态表面和高的电气与结构质量。然后用例如化学汽相淀积(CVD)法或分子束外延(MBE)法(例如参看共同转让的美国专利5210051号)在GaN层上形成III族氮化物pn结器件。
图6～9表明了本发明的长寿命LED的其它种种性能与结构特征。具体地说，图6以曲线图表明了对于本发明的SiC衬底上的GaN层的双晶体x射线的摆动曲线，即相对于角度的每秒计数。对结晶材料衍射的x射线束的角度位置、强度与峰值宽度分析的结果提供了有关这种材料的晶体结构的信息。在这一例子中，本发明的LED中GaN层的半高全宽值(FWHM)已求得约为85弧秒。由于此x射线摆动曲线的测量结果表明，SiC上GaN的晶体质量颇高，就能期望所得LED能提供所需的高强度与长寿命特性。
图7以曲线图表明本发明的长寿命LED中SiC上GaN层的亮度与能量输出的比较。此曲线图表明了在295K温度下于325nm激励波长下的光致发光的测量结果。在整个表面上可观察到均匀发射。室温的光致发光表明这种发射是由3.41eV的带边激发支配，而这通常是由蓝宝石上生长的膜层在2.2eV的缺陷峰值支配，此结果再次说明本发明的在SiC衬底上的GaN所表现出的高质量。
图8是俄歇电子能谱图，表明了本发明的合金层包含有SiC-AlN-GaN合金中的所有五种元素Si、C、Al、N与Ga。在80°K下于SiC-AlN-GaN合金层上进行了阴极射线发光测量，结果表明在紫外与紫光区存在几个峰值。
图9以曲线图表明在本发明的三种层中作为碳化硅浓度函数而得到的边缘峰值能量。如图所示，此边缘峰值的光子能量取决于所述合金层中的SiC浓度。对于SiC浓度约10％克分子的层，此边缘峰值是在约300nm下的波长测定的。
在以上给出的附图与说明中，公开了本发明的几个典型的优选实施例，尽管在其中使用了一些专有名词，但它们只是用在普通的和说明性的意义下而并非用于限定。本发明已具体参考各种最佳实施形式作了相当细致的说明。但是应该认识到，在不脱离前面说明书中所描述和后附权利要求书所规定的本发明的精神和范围的前提下，是可以作出种种改进与变更的。
Claims (20)
1.发射可见光谱中蓝光的发光二极管，其特征是具有长寿命，此发光二极管包括：
导电的SiC衬底(21)；
形成在此SiC衬底上的欧姆接触(22)；
在衬底(21)上的导电缓冲层(23)，其组成选自GaN、AlN、InN、分子式为AxB1-xN的III族的三元系氮化物且其中A与B为III族中的元素而x是0或1或0与1之间的小数、分子式为AxByC1-x-yN的III族的四元系氮化物且其中A与B与C是III族中的元素而x与y是0或1或0与1之间的小数但是x+y＜1、以及SiC与上述III族的三元系和四元系氮化物的合金；以及
在上述缓冲层上的p-n结二极管结构(24)，其中的p型与n型层选自III族的二元系氮化物和三元系氮化物。
2.如权利要求1所述发光二极管，特征在于：所述p-n结二极管结构是选自同质结构与单异质结构。
3.如权利要求1所述发光二极管，特征在于：所述p-n结二极管结构包括双异质结构，而其中的有源层与双异质结构层选自III族的二元系和三元系氮化物。
4.如权利要求1所述发光二极管，特征在于：所述缓冲层包括有GaN，还包括有在此GaN缓冲层与所述结型二极管结构之间的上述缓冲层上的GaN外延层。
5.如权利要求1所述发光二极管，特征在于：在所述结型二极管结构的顶面存在欧姆接触，而相对于所述衬底的欧姆接触则是在衬底的底面，由此形成垂直的器件结构。
6.如权利要求3所述发光二极管，特征在于：所述双异质结构包括
有源层；以及
与此有源层邻接的上、下异质结构层，形成这两层异质结构的组成选自GaN、AlN、InN、分子式为AxB1-xN的III族的三元系氮化物且其中A与B是III族中的元素而x是0或1或0与1之间的小数、以及SiC与此III族三元系氮化物的合金。
7.如权利要求3所述发光二极管，特征在于：所述双异质结构包括有有源层，其组成选自GaN、AlN、InN、分子式为AxB1-xN的III族的三元系氮化物且其中A与B是III族中的元素而x是0或1或0与1之间的小数、以及SiC与此III族三元系氮化物的合金。
8.如权利要求6所述发光二极管，特征在于：所述异质结构层具有分子式AlxGa1-xN，而其中的x是0、1或0与1之间的小数。
9.如权利要求6所述发光二极管，特征在于：所述异质结构层的带隙大于所述有源层的带隙，而所述异质结构层的折射率小于所述有源层的折射率。
10.如权利要求6所述发光二极管，特征在于：所述上异质结构层与下异质结构层的导电类型相反。
11.如权利要求6所述发光二极管，特征在于：所述有源层的组成为InzGa1-zN，其中z是0与1间的小数。
12.如权利要求1所述发光二极管，特征在于：它在所述双异质结构上还包括有使应变最小化的接触层，此接触层的晶格常数与前述缓冲层的晶格常数基本相同。
13.具有延长发光寿命的发光二极管(LED)，此LED包括：
导电的SiC衬底(51)；
在上述SiC衬底上的导电缓冲层(52)，其组成选自GaN、AlN、InN、分子式为AxB1-xN的III族的三元系氮化物而其中A与B是III族中的元素且x是0或1或0与1之间的小数、分子式为AxByC1-x-yN的III族四元系氮化物而其A与B与C是III族中的元素且x与y是0或1或0与1间的小数但是x+y＜1、以及SiC与此III族的三元系氮化物的合金；
形成在所述缓冲层上的III族氮化物的第一层(53)，此第一层具有第一导电类型；
形成在上述第一层上的III族氮化物的第二层(54)，此第二层具有第二导电类型，使得此第一层与第二层形成p-n结器件；
形成在上述第二层上的欧姆接触(55)；以及
形成在所述SiC衬底上的第二欧姆接触(56)，使得通过上述第一与第二欧姆接触供应给p-n结器件的电流能由此产生高强度的光输出。
14.如权利要求1或13所述发光二极管，特征在于：所述SiC衬底具有选自3C、4H、6H与15R组成的组中的多种类型。
15.如权利要求13所述发光二极管，特征在于：所述氮化物层的组成选自GaN、AlN、InN、分子式为AxB1-xN的III族的三元系氮化物且其中A与B是III族中的元素而x是0或1或0与1间的小数、分子式为AxByC1-x-yN的III族四元系氮化物且其中A与B与C是III族中的元素而x与v是0或1或0与1之间的小数，但是x+y＜1、以及SiC与此III族三元系氮化物的合金。
16.如权利要求13所述发光二极管，特征在于：所述III族氮化物的第一层与第二层包括选自同质的、单质的和双异质的结构，
17.如权利要求13所述发光二极管，特征在于：所述导电的缓冲层包括位于SiC衬底上由SiC形成的下部中间层和位于此下部中间层上而由氮化物合金形成的上部中间层。
18.如权利要求1或13所述的发光二极管，特征在于，所述缓冲层包括：
在所述衬底上由碳化硅铝镓氮化物的缓变组成形成的第一层，其中与衬底相邻的部分基本上完全是SiC而距衬底最远的部分基本上完全是铝镓氮化物，而它们之间的部分在含量上则逐渐从主要是SiC而缓变到主要是铝镓氮化物；以及
在上述第一层之上由铝镓氮化物缓变组成形成的第二层。
19.如权利要求18所述的发光二极管，上述缓变的第二层组成是从与所述第一缓冲层的组成相匹配的组成，逐渐缓变到与所述结型器件最下层组成相匹配的组成。
20.如权利要求1或13所述的发光二极管，特征在于：所述缓冲层包括由碳化硅与III族氮化物组成的至少一层缓变层，此缓变层在与所述衬底邻接的界面处是碳化硅，而此缓变层在其与所述结型器件邻接的界面处具有与此结型器件最下层的组成相匹配的组成。
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| US08/309,251 US5523589A (en) | 1994-09-20 | 1994-09-20 | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
| US08/309,251 | 1994-09-20 |
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| US (1) | US5523589A (zh) |
| EP (1) | EP0783768B1 (zh) |
| JP (1) | JP3472305B2 (zh) |
| KR (1) | KR100384923B1 (zh) |
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| CA (1) | CA2200305C (zh) |
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| US20240106397A1 (en) | 2022-09-23 | 2024-03-28 | Wolfspeed, Inc. | Transistor amplifier with pcb routing and surface mounted transistor die |
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| JP2650744B2 (ja) * | 1988-12-28 | 1997-09-03 | シャープ株式会社 | 発光ダイオード |
| US5210051A (en) * | 1990-03-27 | 1993-05-11 | Cree Research, Inc. | High efficiency light emitting diodes from bipolar gallium nitride |
| US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
| JP3160914B2 (ja) * | 1990-12-26 | 2001-04-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体レーザダイオード |
| US5290393A (en) * | 1991-01-31 | 1994-03-01 | Nichia Kagaku Kogyo K.K. | Crystal growth method for gallium nitride-based compound semiconductor |
| JPH088217B2 (ja) * | 1991-01-31 | 1996-01-29 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体の結晶成長方法 |
| US5273933A (en) * | 1991-07-23 | 1993-12-28 | Kabushiki Kaisha Toshiba | Vapor phase growth method of forming film in process of manufacturing semiconductor device |
| US5306662A (en) * | 1991-11-08 | 1994-04-26 | Nichia Chemical Industries, Ltd. | Method of manufacturing P-type compound semiconductor |
| US5313078A (en) * | 1991-12-04 | 1994-05-17 | Sharp Kabushiki Kaisha | Multi-layer silicon carbide light emitting diode having a PN junction |
| JP3105981B2 (ja) * | 1992-01-28 | 2000-11-06 | シャープ株式会社 | 半導体発光素子 |
| US5432808A (en) * | 1993-03-15 | 1995-07-11 | Kabushiki Kaisha Toshiba | Compound semicondutor light-emitting device |
| US5416342A (en) * | 1993-06-23 | 1995-05-16 | Cree Research, Inc. | Blue light-emitting diode with high external quantum efficiency |
| US5338944A (en) * | 1993-09-22 | 1994-08-16 | Cree Research, Inc. | Blue light-emitting diode with degenerate junction structure |
| US5393993A (en) * | 1993-12-13 | 1995-02-28 | Cree Research, Inc. | Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devices |
-
1994
- 1994-09-20 US US08/309,251 patent/US5523589A/en not_active Expired - Lifetime
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- 1995-09-19 WO PCT/US1995/011472 patent/WO1996009653A1/en active IP Right Grant
- 1995-09-19 KR KR1019970701833A patent/KR100384923B1/ko not_active IP Right Cessation
- 1995-09-19 CN CN95195722A patent/CN1096120C/zh not_active Expired - Lifetime
- 1995-09-19 AU AU36294/95A patent/AU3629495A/en not_active Abandoned
- 1995-09-19 JP JP51094396A patent/JP3472305B2/ja not_active Expired - Lifetime
- 1995-09-19 CA CA002200305A patent/CA2200305C/en not_active Expired - Fee Related
- 1995-09-19 AT AT95933768T patent/ATE188575T1/de active
- 1995-09-19 ES ES95933768T patent/ES2143077T3/es not_active Expired - Lifetime
- 1995-09-19 DE DE69514375T patent/DE69514375T2/de not_active Expired - Lifetime
- 1995-09-19 EP EP95933768A patent/EP0783768B1/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7691659B2 (en) | 2000-04-26 | 2010-04-06 | Osram Gmbh | Radiation-emitting semiconductor element and method for producing the same |
| CN100426544C (zh) * | 2000-05-26 | 2008-10-15 | 奥斯兰姆奥普托半导体有限责任公司 | 具有氮化镓基的辐射外延层的发光二极管芯片及制造方法 |
| US7939844B2 (en) | 2000-05-26 | 2011-05-10 | Osram Gmbh | Light-emitting-diode chip comprising a sequence of GAN-based epitaxial layers which emit radiation and a method for producing the same |
| US6891199B2 (en) | 2000-08-11 | 2005-05-10 | Osram Gmbh | Radiation-emitting semiconductor chip and light-emitting diode |
| US7691656B2 (en) | 2000-10-17 | 2010-04-06 | Osram Gmbh | Method for fabricating a semiconductor component based on GaN |
| CN101834245B (zh) * | 2001-06-15 | 2013-05-22 | 克里公司 | 在SiC衬底上形成的GaN基LED |
| CN1305108C (zh) * | 2001-07-23 | 2007-03-14 | 克里公司 | 具有成形衬底的发光二极管的结合以及用于结合具有成形衬底的发光二极管的夹头 |
| CN102163664B (zh) * | 2002-02-08 | 2014-07-23 | 克里公司 | 处理碳化硅衬底改善外延沉积的方法与形成的结构和器件 |
| CN100557966C (zh) * | 2003-03-03 | 2009-11-04 | 克里公司 | 基于氮化物的集成声波器件及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970706618A (ko) | 1997-11-03 |
| ATE188575T1 (de) | 2000-01-15 |
| CN1096120C (zh) | 2002-12-11 |
| KR100384923B1 (ko) | 2003-08-19 |
| WO1996009653A1 (en) | 1996-03-28 |
| ES2143077T3 (es) | 2000-05-01 |
| AU3629495A (en) | 1996-04-09 |
| CA2200305A1 (en) | 1996-03-28 |
| EP0783768A1 (en) | 1997-07-16 |
| CA2200305C (en) | 2003-06-17 |
| US5523589A (en) | 1996-06-04 |
| JP3472305B2 (ja) | 2003-12-02 |
| EP0783768B1 (en) | 2000-01-05 |
| JPH10506234A (ja) | 1998-06-16 |
| DE69514375T2 (de) | 2000-06-21 |
| DE69514375D1 (de) | 2000-02-10 |
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