CN1215921A - 模压球栅阵列型半导体器件及其制造方法 - Google Patents

模压球栅阵列型半导体器件及其制造方法 Download PDF

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CN1215921A
CN1215921A CN98120497A CN98120497A CN1215921A CN 1215921 A CN1215921 A CN 1215921A CN 98120497 A CN98120497 A CN 98120497A CN 98120497 A CN98120497 A CN 98120497A CN 1215921 A CN1215921 A CN 1215921A
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conductive layer
mold pressing
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木村直人
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NEC Corp
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Abstract

本发明公开了一种模压BGA型半导体器件,其具有:半导体芯片,在除焊盘以外的半导体芯片表面的至少一部分上形成绝缘树脂膜;在绝缘树脂膜上的一定区域上形成导电层,该区域包括至少部分对应于安装有焊球的位置;第一金属细线,其是焊盘与导电层之间的键合线;第二金属细线,其是在导电层上的键合线;树脂部分,其可密封半导体芯片,树脂部分包括一孔,用以露出部分第二金属细线;和安装在孔上的焊球。

Description

模压球栅阵列型半导体器件及其制造方法
本发明涉及一种模压BGA(ball grid array球栅阵列)型半导体器件及其制造方法。BGA意指用于连接在衬底的主平面上安置的焊球阵列。
在图1A和1B中示出了一种常用模压BGA型半导体器件，其是通过将缓冲弹性材料称作弹性体10粘接到芯片1的表面上，将铜布线12热压键合到芯片1的焊盘2上，并用密封剂13加以密封，而构成的。图1A表示焊盘2设置在芯片1中央上的状态，图1B表示其设置在周围的状态。
还有，日本专利申请公开号3-94438(1991)和8-204062(1996)公开了模压BGA型半导体器件的实例，其中焊球设置在半导体芯片正表面侧上的树脂封装表面上。
作为其中的一个实例，在图2A和2B中示出了在日本专利申请公开号3-94438(1991)中所公开的半导体器件。图2A是表示形成焊球之前的半导体器件的截面图，图2B是表示在形成焊球以后的半导体器件的截面图。
如图2A所示，其是通过形成与管芯焊盘14连接的伪支撑，其中在管芯焊盘14上固定有半导体芯片1，将半导体芯片1粘接到管芯焊盘14上，在半导体芯片1的焊盘2与伪支撑15之间通过导线5(金属细导线)连接，并树脂密封整个部件，而构成。在树脂密封以后，如图2B所示，由图2A中的线B-B′和C-C′向外切开，由此获得安装在左侧部分上的半导体芯片1。左侧部分的表面和导线5被抛光，从而露出导线5的表面，直到具有预定厚度为止。焊球6形成在导线5露出并抛光的部分上。
然而，在图1A和1B所示的BGA型半导体器件中，存在的问题在于，由于由焊盘2到焊球6的布线结构使用了聚酰胺带11和弹性体10，使得材料的成本变得昂贵，并且由于粘接结构使得制造过程十分复杂。
还有，在图2A和2B所示的BGA型半导体器件中，由于使用了伪支撑15，使得会存在材料成本昂贵的问题。
因此，本发明的目的就是提供一种模压BGA型半导体器件，其中是在低成本下通过导线实现与焊球的连接。
本发明进一步的目的是提供一种制造模压BGA型半导体器件的方法，其中是在低成本下通过导线实现与焊球的连接。
按照本发明，一种模压BGA型半导体器件，其包括：
半导体芯片，在除焊盘以外的半导体芯片表面的至少一部分上形成绝缘树脂膜；
在绝缘树脂膜上的一定区域上形成导电层，其区域包括至少部分对应于安装有焊球的位置；
第一金属细线，其是焊盘与导电层之间的键合线；
第二金属细线，其是在导电层上的键合线；
树脂部分，其可密封半导体芯片，树脂部分包括一孔，用以露出部分第二金属细线；和
安装在孔上的焊球。
按照本发明的另一方面，一种用于制造模压BGA型半导体器件的方法，其包括下列步骤：
在除焊盘以外的至少半导体芯片表面的一部分上形成绝缘树脂膜；
在焊盘与导电层之间进行导线连接，并且在导电层上进行导线连接；
树脂密封半导体芯片；
打出通过密封树脂的孔，用以露出部分金属细线，该细线是导电层上的键合线；和
将焊球安装在孔上。
附图的简要说明。
下面将参照附图更加详细地说明本发明，其中：
图1A是表示常用中央焊盘结构的BGA型半导体器件的截面图；
图1B是表示常用周围焊盘结构的BGA型半导体器件的截面图；
图2A和2B是表示另一常用BGA型半导体器件和制造方法的截面图；
图3A和3B是表示按照本发明在优选实施例中的模压BGA型半导体器件的平面图和截面图；和
图4A至4F是表示按照本发明在优选实施例中用以制造模压BGA型半导体器件方法的截面图。
优选实施例的描述。
下面将参照附图来说明本发明的优选实施例。
图3A是表示在本发明实施例中模压BGA型半导体器件的平面图，其树脂部分地被除去了，图3B是图3A的截面图。
如图3A和3B所示，在芯片1上所形成的聚酰胺膜3上，通过汽相淀积法等形成叠置的金属层4，如铝，其通过导线(金属细线)5与焊盘2连接。进一步地，在叠置的金属层4上，提供向下U形布线。焊球6可连接到向下U形布线5上，该布线在用树脂7密封以后通过将树脂7打孔而露出。
下面，使用图4A至4F来说明制造上述模压BGA型半导体器件的方法。
首先，如图4A所示，在芯片1的表面上形成聚酰胺膜3，并且在露出焊球6的部分上汽相淀积铝4。
如图4B所示，用导线5进行由焊盘2到铝层4的导线连接。焊盘2的位置根据芯片1上的电路而改变。因此，用导线5进行对用以露出焊球6部分的布线。然后，如图4C所示，在铝层4上进行导线连接。
进一步地，如图4D所示，用树脂7进行树脂密封。然后，如图4E所示，通过激光8形成焊球孔9，以露出在图4C中所形成的导线5部分。焊球孔9还可以通过抛光而露出，但是在使用激光时可不伤害到导线而使其露出。最后，如图7所示，在焊球孔9上安装焊球6。
本发明的优点：
如上所述，在本发明中，由于在芯片的绝缘树脂膜上形成导电层，从而降低了用以进行导线连接的材料成本，由此可在低成本下制造半导体器件。还有，可以很容易地进行焊球与金属细线的连接。
虽然根据特定实施例完整清楚地描述了本发明，但是后续权利要求不限于此，可以对其进行各种改型和替换，这对于本技术领域的普通专业人员来说是明显的，其均落入了本发明上述记载的范围。

Claims (12)

1．一种模压BGA型半导体器件，其特征在于：
半导体芯片，在除焊盘以外的半导体芯片表面的至少一部分上形成有绝缘树脂膜；
在所述绝缘树脂膜上的一定区域上形成导电层，所述区域包括至少部分对应于安装有焊球的位置；
第一金属细线，其是所述焊盘与所述导电层之间的键合线；
第二金属细线，其是在所述导电层上的键合线；
树脂部分，其可密封所述半导体芯片，所述树脂部分包括一孔，用以露出部分所述第二金属细线；和
安装在所述孔上的焊球。
2．按照权利要求1的模压BGA半导体器件，其中：
所述绝缘树脂膜为聚酰胺膜。
3．按照权利要求1的模压BGA半导体器件，其中：
所述导电层为铝层。
4．按照权利要求2的模压BGA半导体器件，其中：
所述导电层为铝层。
5．用于制造模压BGA型半导体器件的方法，其包括下列步骤：
在除焊盘以外的半导体芯片表面的至少一部分上形成绝缘树脂膜；
在所述焊盘与所述导电层之间进行导线连接，并且在所述导电层上进行导线键合；
树脂密封所述半导体芯片；
打出通过所述密封树脂的孔，用以露出部分金属细线，该细线是所述导电层上的键合线；和
将焊球安装在所述孔上。
6．按照权利要求5的用于制造模压BGA型半导体器件的方法，其中：
所述打孔步骤是用激光来进行的。
7．按照权利要求5的用于制造模压BGA型半导体器件的方法，其中：
所述绝缘树脂膜为聚酰胺膜。
8．按照权利要求6的用于制造模压BGA型半导体器件的方法，其中：
所述绝缘树脂膜为聚酰胺膜。
9．按照权利要求5的用于制造模压BGA型半导体器件的方法，其中：
所述导电层为铝层。
10．按照权利要求6的用于制造模压BGA型半导体器件的方法，其中：
所述导电层为铝层。
11．按照权利要求7的用于制造模压BGA型半导体器件的方法，其中：
所述导电层为铝层。
12．按照权利要求8的用于制造模压BGA型半导体器件的方法，其中：
所述导电层为铝层。
CN98120497A 1997-10-28 1998-10-28 模压球栅阵列型半导体器件及其制造方法 Pending CN1215921A (zh)

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