CN1216415C - 沉积金属薄膜的方法和包括超临界干燥/清洁组件的金属沉积组合工具 - Google Patents
沉积金属薄膜的方法和包括超临界干燥/清洁组件的金属沉积组合工具 Download PDFInfo
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Abstract
一种在基材上沉积金属薄膜的方法包括超临界预清洁步骤、超临界解吸步骤、和金属沉积步骤。最好,预清洁步骤包括维持超临界二氧化碳和螯合剂与基材的接触,以便从基材的金属表面除去氧化物。更优选的是,预清洁步骤包括维持超临界二氧化碳、螯合剂、酸与基材的接触。另一种选择,是预清洁步骤包括维持超临界二氧化碳和胺与氧化物层的接触。解吸步骤包括维持超临界二氧化碳与基材的接触,以便从基材除去被吸收的材料。然后,金属沉积步骤将金属薄膜沉积在基材上,同时不使基材暴露于会氧化预清洁的基材表面的氧化材料中,同时不使基材暴露于会吸附到基材上的非挥发性吸附材料中。一种将金属薄膜沉积到基材的装置包括转移组件、超临界加工组件、真空组件、和金属沉积组件。超临界加工组件被连接到转移组件。真空组件将金属沉积组件连接到转移组件。在操作时,该沉积金属薄膜装置执行超临界预清洁步骤、超临界解吸步骤、和金属沉积步骤。
Description
相关申请
本申请要求申请日为2000年4月25日的在先美国专利申请№.60/199580的优先权,此处将其编入作参考。
技术领域
本发明涉及薄膜沉积领域。更具体地说,本发明涉及在预先进行包括基材的解吸或预清洁加工步骤的基材上沉积薄膜的领域。
背景技术
在半导体加工中,在沉积金属薄膜之前通常需要预先对基材进行解吸和清洁步骤。解吸和清洁步骤确保金属薄膜对基材的粘附,并在基材金属与金属薄膜之间还提供更好的接触阻力性(contactresistance)。
在现有技术中,解吸步骤、预清洁步骤和金属薄膜沉积步骤均是用组合工具进行的,以致使在解吸步骤或预清洁步骤与金属薄膜沉积步骤之间基材未暴露于大气中。
为了使基材脱气,现有技术的解吸步骤是在真空下加热基材。通过在真空下加热基材,被吸附到基材表面的或被吸收到基材中的物质从基材中被除掉。典型的加工条件包括10-3乇或更高的真空和温度在200-400℃范围之间。一般说,为了缩短加工时间就使用较高的温度,就较高的温度而言加工时间一般在30-60秒的范围内。
现有技术的预清洁步骤是将基材暴露于离子轰击中,这通常被称为溅射蚀刻预清洁。在溅射蚀刻预清洁中,氩离子、氢离子、氦离子、或它们的混合物,和电子形成等离子体,等离子体轰击基材表面而溅蚀掉一层薄的材料层。通常,在半导体加工中,蚀刻步骤在沉积金属薄膜之前进行。蚀刻步骤在基材中形成沟槽和达到底层金属层的通道孔。蚀刻步骤后,由于将基材暴露于大气中之故,在通道处底下的金属层之暴露表面形成氧化物。溅射蚀刻预清洁试图溅蚀掉氧化物,并在灰化和湿清洁之后除去任何残留的残余物。溅射蚀刻预清洁通常要求10-3乇或更高的真空。
现有技术的一种特定的金属沉积方法是,在半导体基材上沉积隔离金属层和铜晶籽层,从而在通道孔处与底下的铜层形成接触。在蚀刻步骤中,形成穿透二氧化硅层与氮化硅层而到达底下铜层的通道孔。在现有技术的另一种蚀刻步骤中,通道孔在低-k电介质材料诸如聚合物基材料和含氟或碳的氧化物中形成。在蚀刻步骤之后和金属薄膜沉积之前,等离子体灰化步骤和湿清洁步骤基本上除掉光敏抗蚀剂、光敏抗蚀剂残余物、蚀刻残余物和留下的被吸收到基材表面的材料残余物和留在通孔处底下的铜层上的薄氧化铜层上的材料残余物。现有技术的解吸步骤除去吸附在基材表面上的材料。所述溅蚀预清洁除去通道孔中的氧化铜层,并除去通道孔周边基材的暴露层。然后在沉积隔离层金属后继之以铜晶籽层。随后,是电镀步骤将另外的铜层沉积在铜晶籽层上。
现有技术的组合工具包括无人管理站(handoff station)、前转移组件、后转移组件、脱气组件、溅射蚀刻组件、和金属沉积组件。前转移组件包括第一机械手。后转移组件包括第二机械手。无人管理站通过第一阀门或负载锁定装置(loadlock)而与前转移组件相连。脱气组件和溅射蚀刻组件被连接到前转移组件。后转移组件通过第二阀门或负载锁定装置而与前转移组件相连。金属沉积组件与后转移组件相连。通常,组合工具包括二个脱气组件、二个溅射蚀刻组件、和二个或多个金属沉积组件。在操作时,前后转移组件是在真空下操作的。现有技术中用于解吸、预清洁和金属沉积的第二组合工具包括单一的转移组件、脱气组件、溅射蚀刻组件、和金属沉积组件,在此情况下脱气组件、溅射蚀刻组件、和金属沉积组件与单一的转移组件相连。
组合工具的操作以第一机械手将基材从无人管理站输送到脱气组件开始,在进行脱气步骤。然后,第一机械手将基材输送到溅射蚀刻组件,在该处进行溅射蚀刻预清洁。然后,第一机械手将基材输送到第二机械手,而将基材置于金属沉积组件中。在沉积金属薄膜之后,然后第二机械手将基材返回到第一机械手,从而将基材返回到无人管理站。
由于现有技术的解吸步骤是在提高温度下进行的,因此提高的温度有可能引起基材的损坏。这种担心对聚合物材料是特别明显的,因为未来的整体电路可能使用低介电常数性的聚合物材料作绝缘体。
在预清洁步骤中,等离子体能够引起基材表面的等离子体损坏。还有,众所周知的,是溅射蚀刻预清洁会在沟槽的边缘和通孔的边缘引起角隅削剪(corner clipping)而产生小平面。此角隅削剪对较小尺寸的整体电路是特别有害的,因为角隅削剪减少毗邻线的分离,从而导致在毗邻线之间的不能接受的电干扰。不但溅射蚀刻预清洁会引起整体电路的物理损害,而且还会能引起电损害。
此外,在沟槽底下与通孔中的金属层的溅射,除了引起溅射材料在沟槽和通孔侧壁的沉积之外还会引起研磨。例如,在通孔中的氧化铜层的溅射蚀刻预清洁引起铜和氧化铜沉积在通孔侧壁。而且,还有,溅射蚀刻预清洁对预清洁聚合物基材料是不合适的,因为会出现预料到的在溅射蚀刻预清洁中由于物理轰击而引起的损坏。还有,即使够能使用溅射蚀刻预清洁的话,当聚合物材料被暴露时就不能使用氢离子,因为该氢会水合所述聚合物基材料。另外,溅射蚀刻预清洁随沟槽与通孔的长径比(深度除以宽度)增加,其效果逐渐变差。
脱气组件与溅射蚀刻组件二者均要求高真空泵和相关的真空管道设备,这就意味着增加组合工具的购置与维护费用,因为它们是相当复杂的并要求经常维修以保证不成为微粒污染源。
当前急需的是一种不要求过高温度且与金属沉积相适应的解吸方法。
当前急需的是一种不使用等离子体且与金属沉积相适应的预清洁方法。
当前急需的是一种与低k-材料诸如聚合物材料、和含氟或碳的氧化物相适应的解吸方法。
当前急需的是一种与低k-材料诸如聚合物材料、和含氟或碳的氧化物相适应的预清洁方法。
当前急需的是一种与金属沉积相适应且不昂贵的解吸方法。
当前急需的是一种与金属沉积相适应且不昂贵的预清洁方法。
发明内容
一种在基材上沉积金属薄膜的方法,包括超临界预清洁步骤、超临界解吸步骤、和金属沉积步骤。最好,预清洁步骤包括维持超临界二氧化碳和螯合剂与基材的接触,以便从基材的金属表面除去氧化物。更优选的是,该预清洁步骤包括维持超临界二氧化碳、螯合剂、一种酸与基材的接触,在此情况下该酸溶解氧化物层同时螯合剂被连接到疏松的金属离子并将其带走。另一种选择是,预清洁步骤包括维持超临界二氧化碳和一种胺与所述氧化物层的接触,在此情况下该胺溶解氧化物层并带走金属离子。解吸步骤包括维持超临界二氧化碳与基材的接触,以便从基材除去被吸收的材料。然后,金属沉积步骤将金属薄膜沉积在基材上,同时不使基材暴露于会氧化预清洁的基材表面的氧化材料中,同时不使基材暴露于会吸附到基材的非挥发性吸附材料中。
一种将金属薄膜沉积到基材的装置,它包括转移组件、超临界加工组件、真空组件、和金属沉积组件。超临界加工组件被连接到转移组件。真空组件将金属沉积组件连接到转移组件。在操作时,沉积金属薄膜的装置执行超临界预清洁步骤、超临界解吸步骤、和金属沉降步骤。
在本发明的一个方面,提供了一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳和螯合剂与基材的接触,以便从基材的金属表面除去氧化物层,由此形成预清洁的基材;和
b.在不使预清洁基材暴露于会氧化预清洁基材金属表面的材料之前提下,在预清洁基材上沉积金属薄膜。
在本发明的一个方面,提供了一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳和一种胺与基材的接触,以便从基材的金属表面除去氧化物层,由此形成预清洁的基材;和
b.在不使预清洁的基材暴露于会氧化预清洁基材金属表面的材料之前提下,在预清洁基材上沉积金属薄膜。
在本发明的一个方面,提供了一种在基材上沉积一种薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳在第一超临界加工组件中与基材的接触,以便从基材除去选自由被吸收物和被吸附物组成的组中的吸着物,由此形成解吸的基材;和
b.将该薄膜沉积在第二组件解吸的基材上,其中所述解吸的基材是从第一组件转移至第二组件中的,所述转移通过阀进行而不使基材暴露于周围环境中。
在本发明的一个方面,提供了一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳与基材的接触,以便从基材除去选自由被吸收物和被吸附物组成的组中的吸着物;
b.维持超临界二氧化碳和一种螯合剂与基材的接触,以便从基材的金属表面除去氧化物层;和
c.随后在不使基材暴露于会在沉积金属薄膜之前形成非挥发性吸着物的第一种材料和不使基材暴露于会在沉积金属薄膜之前形成氧化物的第二种材料的前提下,在基材上沉积金属薄膜。
在本发明的一个方面,提供了一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳与基材的接触,以便从基材除去选自由被吸收物和被吸附物组成的组中的吸着物;
b.维持超临界二氧化碳和一种胺与基材接触的步骤,以便从基材的金属表面除去氧化物层;和
c.随后在不使基材暴露于会在沉积金属薄膜之前形成非挥发性吸着物的第一种材料和不使基材暴露于会在沉积金属薄膜之前形成氧化物的第二种材料的前提下,在基材上沉积金属薄膜。
在本发明的一个方面,提供了一种在基材上沉积金属薄膜的装置,包括:
a.一种转移组件;
b.一种与转移组件相连的超临界加工组件;
c.一种金属沉积组件;
d.一种将金属沉积组件连接到转移组件的真空组件;和
e.在超临界加工组件和金属沉积组件之间的转移基材的设备。
在本发明的一个方面,提供了一种在基材上沉积金属薄膜的装置,包括:
a.包括入口与第一机械手的转移组件;
b.被连接到转移组件的超临界加工组件;
c.金属沉积组件;和
d.将金属沉积组件连接到转移组件的真空组件,该真空组件包括真空室和第二机械手,其中第一机械手和第二机械手配置成在超临界加工组件和金属沉积组件之间转移基材。
在本发明的一个方面,提供了一种装置,包括:
a.包括一个或多个超临界组件的前转移组件,该超临界组件配置成使用超临界溶液处理基材;
b.与前转移组件相连的后转移组件,该后转移组件包括一个或多个配置成在处理过的基材上沉积材料层的沉积组件;和
c.在前转移组件和后转移组件之间转移基材而不使基材暴露于环境的设备。
附图说明
图1示意性地说明本发明的优选的方法。
图2示意性地说明本发明的另一优选的方法。
图3示意性地说明本发明的优选的金属沉积组合工具。
具体实施方式
在图1中示意性地说明本发明的优选的方法。优选方法20将金属薄膜沉积在基材上。最好,基材为在整个电介质材料到底层金属层具有通孔的半导体基材。当金属薄膜被沉积在半导体基材上时,金属薄膜在通孔处与底层金属层接触。更优选的是,该半导体基材包括在双重的金属镶嵌结构中的通孔和沟槽。在金属镶嵌结构中,金属层也在通孔处与底层金属层接触。另一种选择是,金属薄膜被沉积在另一种基材上,在此金属薄膜与另一种基材上的被暴露的金属表面相接触。
优选方法20包括超临界预清洁步骤22、超临界解吸步骤24、和金属沉积步骤26。在超临界预清洁步骤22中,基材被保持于超临界室中且最好被暴露于超临界二氧化碳与螯合剂中。与超临界二氧化碳相混合的螯合剂与底层金属层上的氧化物反应,而形成底层金属的螯合物。超临界二氧化碳将螯合物带走。在超临界解吸步骤24中,基材保持在临界室中且暴露于超临界二氧化碳中,从而从基材中解吸被吸附的或被吸收的材料。中且最好被暴露于超临界二氧化碳与螯合剂中。与超临界二氧化碳相混合的螯合剂与底层金属层上的氧化物反应,而形成底层金属的螯合物。超临界二氧化碳将螯合物带走。在超临界解吸步骤24中,基材保持在临界室中且暴露于超临界二氧化碳中,从而从基材中解吸被吸附的或被吸收的材料。
更优选的是,超临界预清洁步骤22除包括维持超临界二氧化碳和螯合剂与基材的接触外,还维持一种酸与基材的接触。该酸起溶解氧化物的作用而螯合剂与疏松的金属离子相连接并将其带走。
最好,螯合剂选自由2,4-戊烷-二酮、1,1,1,6,6,6-六氟-2,4-戊二酮、1,1,1-三氟戊烷-2,4-二酮、2,6-二甲基庚烷-3,5-二酮、2,2,7-三甲基辛烷-2,4-二酮、2,2,6,6-四甲基-庚烷-3,5-二酮、乙二胺二乙酸(EDTA)、和次氮基三乙酸(NTA)的组成的组中。
优选的是,酸选自由有机酸或无机酸组成的组中,这取决于开始被预清洁的具体氧化物。最好,将有机酸用于预清洁氧化铜。更优选的是,对预清洁氧化铜而言,有机酸选自由乙酸、蚁酸、草酸和丙二酸;α-羟基酸诸如羟基乙酸、柠檬酸、苹果酸或乳酸;或氨基酸诸如甘氨酸、丙氨酸、白氨酸、缬氨酸、谷氨酰胺或赖氨酸组成的组中。
优选的是,无机酸被用于预清洁氧化铝。更优选的是,对预清洁氧化铝而言,无机酸选自由氢氟酸和缓冲的氢氟酸配方诸如氟化铵和氟化氢铵组成的组中。
另一种可选择的是,在预清洁步骤22中,螯合剂和酸被一种胺所取代。胺起溶解氧化物并将金属离子带走的作用。最好,该胺选自由三乙醇胺、2-甲基氨基乙醇、吡啶、2,2′-双吡啶、和五甲基二亚乙基三胺组成的组中。
在超临界预清洁步骤22中,超临界室最好被加压到超过临界压力的高压而超临界二氧化碳和螯合剂在基材上流动。更优选的是,超临界二氧化碳、螯合剂、和酸在基材上流动。可供选择的是,超临界二氧化碳和胺是在基材上流动。
为了在超临界室内达到超临界状态,室内的温度必须维持在或高于临界温度,该温度为30.5℃。此后,压力在高压与低压之间至少循环1.5次。最好,低压高于临界压力。
超临界解吸步骤24优选为超临界预清洁步骤22的一部份。超临界预清洁步骤22中,被吸收到基材或基材中的气体和液体被解吸。为了改善超临界解吸步骤24应升高室内的温度。还可供选择的是,超临界解吸步骤24作为独立步骤可在超临界预清洁步骤22之前或之后进行。
优选的是,在超临界预清洁步骤22与超临界解吸步骤24期间,室内的温度为31-100℃。还可供选择的是,室内的温度可维持在低于基材的温度限之内。
金属沉积步骤26包括将金属薄膜沉积在基材上。最好,基材包括通到底层金属层的通孔。金属沉积步骤26优选将金属薄膜沉积在通孔中,从而使金属薄膜与底层金属层接触。最好,金属沉积步骤26为化学蒸汽沉积(CVD)过程。另一种可选择的是,金属沉积步骤26为物理蒸汽沉积(PVD)过程。
重要的是,在超临界预清洁步骤22,超临界解吸步骤24和金属沉积步骤26之间,基材不被暴露于大气或不被暴露会在基材上形成非挥发性吸收的被吸附物、不会在基材内形成不挥发性被吸收物或与基材反应的其他气体中。在基材上挥发性被吸附物的形成并不是有害的,因为在超临界预清洁步骤22的终点或在超临界解吸步骤24的终点,短暂地暴露于真空中会引起挥发性被吸收物快速地从基材中解吸。同样,挥发性被吸收物的形成并不是有害的,因为短暂地暴露于真空中会引起挥发性被吸收物快速地从基材中解吸。最好,在超临界预清洁步骤22,起临界解吸步骤24和金属沉积步骤26之间,基材被保持在真空下。另外,也可在超临界预清洁步骤22,超临界解吸步骤24和金属沉积步骤26之间,将基材保持在惰性气体环境中,在此情况下惰性气体环境既不会形成非挥发性被吸附物也不会形成非挥发性被吸收物。
由于使用超临界预清洁步骤22而不使用溅射蚀刻预清洁,从而避免了基材的等离子体损害。另外,使用超临界预清洁步骤22而不使用溅射蚀刻预清洁,还避免在沟槽与通孔中的角隅削剪(cornerclipping)和小平面的产生,避免在沟槽与通孔中产生研磨,和避免将溅射的金属沉积在沟槽与通孔的侧壁上。另外,使用超临界预清洁步骤22而不使用溅射蚀刻预清洁,还避免制造在基材上的整体电路的电损害。而且,超临界预清洁步骤22与溅射蚀刻预清洁相比,对聚合物基电介质材料而言会造成较小的损害。
使用超临界解吸步骤24而不在真空下加热基材以使基材脱气,从而避免了在加工基材中使用过高的温度,此点对聚合物基电介质材料而言特别重要。
根据具体方法的需要,超临界预清洁步骤22或超临界解吸步骤24可能并不是必须的。在本发明的第一种可供选择的方法中,进行超临界预清洁步骤22和金属沉积步骤26,但是并不进行超临界解吸步骤24。在本发明的第二种可供选择的方法中,进行超临界解吸步骤24和金属沉积步骤26,但并不进行超临界预清洁步骤22。在本发明的第三种可供选择的方法中,第二可供选择方法金属沉积步骤26被另外的沉积步骤所取代。在这可选择的沉积步骤中,一种不是金属薄膜的薄膜被沉积在基材上。
附图2示意地说明本发明的第四种可供选择的方法。第四种可供选择的方法30是在优选方法20中添加上超临界残余物去除步骤32。超临界残余物去除步骤32去掉在先前的蚀刻步骤后仍留在基材上的残余物。在先前的蚀刻步骤中,光致抗蚀剂掩盖基材的某些部分以致只有基材的未掩盖部分被蚀刻掉。蚀刻步骤还蚀刻光致抗蚀剂,有时光致抗蚀剂被完全蚀刻掉。一般说,蚀刻步骤后在基材上存在某些残留的光致抗蚀剂,且在基材上还存在蚀刻残留物和光致抗蚀剂残留物。因此,蚀刻步骤后仍留在基材上的残留物包括光致抗蚀剂残留物、蚀刻残留物、和可能残留的光致抗蚀剂。超临界残余物去除步骤32包括将基材与残留物暴露于超临界二氧化碳和一种溶剂中,直至残留物被从基材上除掉时为止。超临界残余物去除步骤32是2000年10月25日提交的美国专利申请№ 09/697 227的主题,此处将其全文引入作参考文献。
本发明的优选金属沉积组合工具被示于图3中。该优选的金属沉积组合工具40包括装载机组件42、前转移组件44、前转移组件机械手46、第一-第四超临界组件(48-51)、后转移组件52、后转移组件机械手54、和第一-第四金属沉积组件(56-59)。装载机组件42包括第一和第二负载锁定装置(60与62)、和装载机机械手64。第一和第二负载锁定装置(60与62)包括前转移组件的入口。
装载机组件42、前转移组件机械手46、第一-第四超临界组件(48-51)均与前转移组件相连。后转移组件52通过阀66与前转移组件相连。后转移组件机械手54与第一-第四金属沉积组件(56-59)被连接到后转移组件52。
在操作中,使用标准机械界面(SMIF)概念的第一与第二前开启单元容器(FOUP)(68与70)与装载机组件42相连。优选的是,第一容器68最初含有在湿清洁法中已被蚀刻、灰化和清洁了的半导体基材72。装载机机械手64将半导体基材72从第一容器68转移到第一负载锁定装置60。负载锁定装置60被关闭并被抽真空。然后负载锁定装置60与真空状态的前转移组件机械手46相开通。前转移组件机械手46将半导体基材72转移到第一超临界组件48,在此情况下发生超临界预清洁和解吸(22与24)(图1)。同时,将另外的半导体基材从第一容器通过第一负载锁定装置60装到第二-三超临界组件(49-51)。可供选择的是,FOUP被SMIF容器所取代,或打开盒。
一旦完成超临界预清洁和解吸步骤(22和24),半导体基材72从第一起临界组件48通过阀66被转移到后转移组件机械手52。后转移组件52也是在真空下操作的。然后后转移组件机械手54将半导体基材72转移到第一金属沉积组件56,在该处进行金属沉积步骤(图1)。同时,另外的半导体基材从第二-三超临界组件(49-51)转移到第二-三金属沉积组件(57-59)。
一旦完成金属沉积步骤26,借助第二转移组件机械手54而将半导体基材从第一金属沉积组件56转移到第一转移组件机械手46。然后第一转移组件机械手46将半导体基材72转移到被加压到大气压的第一负载锁定装置60。然后借助于装载机组件机械手46将半导体基材72转移到第一容器68。随后,另外的半导体基材从第二-三金属沉积组件(57-59)被转移到第一容器68。以后,来自第二容器70的更多的半导体基材被加工并返回到第二容器70。
对本技术领域的熟练人员来说,将或多或少的超临界加工组件连接到前转移组件44是显而易见的。此外,对本技术领域的熟练人员来说,将或多或少的金属沉积组件连接到后转移组件52也是显而易见的。还有,对本技术领域的熟练人员来说,前转移组件44的单个负载锁定装置对于前转移组件44的入口已经足够。
在第一种可供选择的金属沉积组合工具中,前转移组件44是在大气压下操作,且对半导体晶片提供惰性气体环境的。在第一种可供选择的金属沉积组合工具中,第三和第四负载锁定装置将前转移组件44连接到后转移组件52。还有,在第一种可供选择的金属沉积组合工具中,惰性气体注入装置与前转移组件相连。
在第二种可供选择的金属沉积组合工具中,第一与第二超临界加工组件(48和49)和第一第二金属沉积组件(56和57)与单一的转移组件相连。与优选的金属沉积工具40相比,第一可供选择的金属沉积工具不被优选,因为通过在各别的转移组件上排列各组件,该优选的金属沉积工具使超临界加工组件与金属沉积组件相分开。此种方式可能提供更清洁的金属沉积过程。第一种可供选择的金属沉积组合工具被介绍于2000年11月1日提交的美国专利申请№ 09/704 641中,此处将其全文引入作参考文献。
对本技术领域的熟练人员来说,在不背离由权利要求书所定义的本发明的精神与范围之前提下,对优选的实施方案作出其他的改进是显而易见的。
Claims (41)
1.一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳和螯合剂与基材的接触,以便从基材的金属表面除去氧化物层,由此形成预清洁的基材;和
b.在不使预清洁基材暴露于会氧化预清洁基材金属表面的材料之前提下,在预清洁基材上沉积金属薄膜。
2.权利要求1的方法,其中维持超临界二氧化碳和螯合剂与基材接触的步骤还包括维持一种酸与基材的接触以致使该酸溶解氧化物层。
3.权利要求2的方法,其中的酸选自由有机酸与无机酸组成的组中。
4.权利要求2的方法,其中氧化物层包括氧化铜。
5.权利要求4的方法,其中的酸包括有机酸。
6.权利要求4的方法,其中酸选自由乙酸、蚁酸、草酸、丙二酸、α-羟基酸、羟基乙酸、柠檬酸、苹果酸、乳酸、氨基酸、甘氨酸、丙氨酸、白氨酸、缬氨酸、谷氨酰胺和赖氨酸组成的组中。
7.权利要求2的方法,其中的氧化物包括氧化铝。
8.权利要求7的方法,其中的酸包括无机酸。
9.权利要求7的方法,其中的酸选自由氢氟酸、缓冲的氢氟酸、氟化铵和氟化氢铵组成的组中。
10.权利要求1的方法,还包括维持超临界二氧化碳与基材接触的步骤,以便在沉积金属薄膜步骤之前从基材中解吸被吸收物。
11.权利要求1的方法,还包括维持超临界二氧化碳和一种溶剂与基材接触的步骤,以便在沉积金属薄膜步骤之前从基材除去由选自由光致抗蚀剂、光致抗蚀剂残余物和蚀刻残余物组成的组中的残留物。
12.权利要求1的方法,其中螯合剂选自由2,4-戊烷-二酮、1,1,1,6,6,6-六氟-2,4-戊二酮、1,1,1-三氟戊烷-2,4-二酮、2,6-二甲基庚烷-3,5-二酮、2,2,7-三甲基辛烷-2,4-二酮、2,2,6,6-四甲基-庚烷-3,5-二酮、乙二胺二乙酸和次氮基三乙酸组成的组中。
13.一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳和一种胺与基材的接触,以便从基材的金属表面除去氧化物层,由此形成预清洁的基材;和
b.在不使预清洁的基材暴露于会氧化预清洁基材金属表面的材料之前提下,在预清洁基材上沉积金属薄膜。
14.权利要求13的方法,其中的胺选自由三乙醇胺、2-甲基氨基乙醇、吡啶、2,2′-双吡啶和五甲基二亚乙基三胺组成的组中。
15.权利要求13的方法,还包括维持超临界二氧化碳和一种溶剂与基材接触的步骤,以便在沉积金属薄膜步骤之前从基材除去选自由光致抗蚀剂、光致抗蚀剂残余物和蚀刻残余物组成的组中的残留物。
16.一种在基材上沉积一种薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳在第一超临界加工组件中与基材的接触,以便从基材除去选自由被吸收物和被吸附物组成的组中的吸着物,由此形成解吸的基材;和
b.将该薄膜沉积在第二组件解吸的基材上,其中所述解吸的基材是从第一组件转移至第二组件中的,所述转移通过阀进行而不使基材暴露于周围环境中。
17.权利要求16的方法,其中的薄膜包括金属薄膜。
18.权利要求17的方法,还包括维持超临界二氧化碳和螯合剂与基材接触的步骤,以便在基材上沉积金属薄膜步骤之前,从基材的金属表面除去氧化物层。
19.权利要求18的方法,其中维持超临界二氧化碳和螯合剂与基材接触的步骤,还包括维持一种酸与基材的接触,以便使该酸溶解所述氧化物层。
20.权利要求17的方法,还包括维持超临界二氧化碳和一种胺与基材接触的步骤,以便在基材上沉积金属薄膜步骤之前,从基材的金属表面除去氧化物层。
21.权利要求17的方法,还包括维持超临界二氧化碳和一种溶剂与基材接触的步骤,以便在沉积金属薄膜步骤之前,从基材除去选自由光致抗蚀剂、光致抗蚀剂残余物和蚀刻残余物组成组中的残留物。
22.一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳与基材的接触,以便从基材除去选自由被吸收物和被吸附物组成的组中的吸着物;
b.维持超临界二氧化碳和一种螯合剂与基材的接触,以便从基材的金属表面除去氧化物层;和
c.随后在不使基材暴露于会在沉积金属薄膜之前形成非挥发性吸着物的第一种材料和不使基材暴露于会在沉积金属薄膜之前形成氧化物的第二种材料的前提下,在基材上沉积金属薄膜。
23.权利要求22的方法,其中维持超临界二氧化碳和螯合剂与基材接触的步骤还包括维持一种酸与基材的接触,以致该酸溶解所述氧化物层。
24.权利要求22的方法,还包括维持超临界二氧化碳和一种溶剂与基材接触的步骤,以便在沉积金属薄膜步骤之前,除去选自由光致抗蚀剂、光致抗蚀剂残余物和蚀刻残余物组成组中的吸着物。
25.一种在基材上沉积金属薄膜的方法,包括以下各步骤:
a.维持超临界二氧化碳与基材的接触,以便从基材除去选自由被吸收物和被吸附物组成的组中的吸着物;
b.维持超临界二氧化碳和一种胺与基材接触的步骤,以便从基材的金属表面除去氧化物层;和
c.随后在不使基材暴露于会在沉积金属薄膜之前形成非挥发性吸着物的第一种材料和不使基材暴露于会在沉积金属薄膜之前形成氧化物的第二种材料的前提下,在基材上沉积金属薄膜。
26.权利要求25的方法,还包括维持超临界二氧化碳和一种溶剂与基材接触的步骤,以便在沉积金属薄膜步骤之前,除去选自由光致抗蚀剂、光致抗蚀剂残余物和蚀刻残余物组成的组中的残留物。
27.一种在基材上沉积金属薄膜的装置,包括:
a.一种转移组件;
b.一种与转移组件相连的超临界加工组件;
c.一种金属沉积组件;
d.一种将金属沉积组件连接到转移组件的真空组件;和
e.在超临界加工组件和金属沉积组件之间的转移基材的设备。
28.权利要求27的装置,其中的转移组件包括入口与第一机械手。
29.权利要求28的装置,其中的入口包括负载锁定装置。
30.权利要求29的装置,还包括连接到转移组件的惰性气体注入装置,以致在操作时转移组件提供惰性气体环境。
31.权利要求29的装置,还包括连接到转移组件的真空泵,以致转移组件是在真空下操作的。
32.权利要求28的装置,还包括将转移组件连接到真空组件的阀。
33.权利要求32的装置,还包括连接到真空组件的真空泵。
34.权利要求28的装置,还包括将转移组件连接到真空组件的负载锁定装置。
35.权利要求27的装置,其中超临界加工组件包括一个压力容器。
36.一种在基材上沉积金属薄膜的装置,包括:
a.包括入口与第一机械手的转移组件;
b.被连接到转移组件的超临界加工组件;
c.金属沉积组件;和
d.将金属沉积组件连接到转移组件的真空组件,该真空组件包括真空室和第二机械手,其中第一机械手和第二机械手配置成在超临界加工组件和金属沉积组件之间转移基材。
37.一种装置,包括:
a.包括一个或多个超临界组件的前转移组件,该超临界组件配置成使用超临界溶液处理基材;
b.与前转移组件相连的后转移组件,该后转移组件包括一个或多个配置成在处理过的基材上沉积材料层的沉积组件;和
c.在前转移组件和后转移组件之间转移基材而不使基材暴露于环境的设备。
38.权利要求37的装置,其中在第一转移组件和第二转移组件之间转移基材的设备包含一个或多个转移机械手。
39.权利要求37的装置,进一步包含在前转移组件和后转移组件之一中用于分离基材的阀。
40.权利要求37的装置,进一步包含用于引入基材的装载机组件。
41.权利要求40的装置,其中装载机组件与前转移组件相连。
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2008
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IL152376A0 (en) | 2003-05-29 |
KR20030043788A (ko) | 2003-06-02 |
JP2009102740A (ja) | 2009-05-14 |
KR100693691B1 (ko) | 2007-03-09 |
JP2003534646A (ja) | 2003-11-18 |
CN1425194A (zh) | 2003-06-18 |
JP5000629B2 (ja) | 2012-08-15 |
US6890853B2 (en) | 2005-05-10 |
WO2001082368A3 (en) | 2002-05-16 |
US7208411B2 (en) | 2007-04-24 |
US20040229449A1 (en) | 2004-11-18 |
US20020001929A1 (en) | 2002-01-03 |
WO2001082368A2 (en) | 2001-11-01 |
EP1277233A2 (en) | 2003-01-22 |
AU2001255656A1 (en) | 2001-11-07 |
IL152376A (en) | 2006-07-05 |
TWI287853B (en) | 2007-10-01 |
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