CN1274504C - 制造用于喷墨打印机的具有带孔喷嘴防护的打印头的方法 - Google Patents

制造用于喷墨打印机的具有带孔喷嘴防护的打印头的方法 Download PDF

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CN1274504C
CN1274504C CNB028046315A CN02804631A CN1274504C CN 1274504 C CN1274504 C CN 1274504C CN B028046315 A CNB028046315 A CN B028046315A CN 02804631 A CN02804631 A CN 02804631A CN 1274504 C CN1274504 C CN 1274504C
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卡·西尔弗布鲁克
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Abstract

一种用于喷墨打印机的打印头，具有一个采用微电子机械系统(MEMS)技术制作的喷墨喷嘴(22)阵列(14)。为了保护该精密的喷嘴结构，一个喷嘴防护装置(80)覆盖了该阵列(14)的外表面。在该防护装置(80)中制作一个对应的孔(84)阵列。为把防护装置(80)贴附到设有喷嘴(22)的硅基片(16)上，配置了用于与喷嘴防护装置(80)上面的互补结构相接合的调准结构(148)。为了在该喷嘴(22)和该防护装置(80)中的各个孔(84)之间精确的定位，可以使用与用于制作该喷嘴(22)的同样的蚀刻和沉积技术来形成该调准结构(148)。为保护易损的喷嘴结构(22)在装配过程中免于与支柱的各种不利接触，采用牺牲层(152)来强化喷嘴(22)，该牺牲层随后通过氧等离子蚀刻(154)而去除。

Description

制造用于喷墨打印机的具有带孔喷嘴防护的打印头的方法
技术领域
本发明涉及打印介质产品，并且具体地涉及喷墨打印机。
背景技术
喷墨打印机是众所周知的并且是广泛使用的打印介质产品的形式，将墨水进送到打印头上的数字控制的喷嘴阵列。当打印头经过该介质时，从喷嘴阵列喷射出墨水，从而在介质上生成一幅图像。
打印机性能依赖于诸如操作费用，打印品质，运行速度以及使用的方便程度等因素。喷嘴喷射的单个墨滴的质量、频率以及速度将会影响这些性能参数。
例如，美国专利5,057,853号公开了一种制造热喷墨打印头的方法，其中薄膜被图案化以暴露用于形成在一结合的晶片基底上的喷嘴的加热元件，所述薄膜形成有延长孔，该延长孔限定从喷嘴到加热元件的距离，且在无需将薄膜切成小方块的情况下允许将该晶片切成单个的打印头，由此最小化薄膜材料的毛刺形成且降低制造成本。
最近，喷嘴阵列一直采用微电子机械系统(MEMS)技术制作，它具有亚微米厚度的机械结构。这样就允许生产能够快速地喷射体积在皮升(10-12升)大小的墨滴的打印头。
当这些打印头的微观结构能够以相对低的成本提供高速以及良好的打印品质时，它们的尺寸使这些喷嘴极其容易损坏，并且非常容易被手指、灰尘或者介质基质的轻微接触而损坏。这样使该打印头对于很多必须具有一定的强度的应用不能实用。另外，损坏的喷嘴可能不能喷射向它进送的墨水。随着墨水的积累并在喷嘴的外部形成墨滴，可能会影响周围喷嘴的喷墨并且/或者该损坏的喷嘴将直接将墨水泄露到打印的基质上。这两种情况对打印品质是有害的。
为了解决这个问题，可以在喷嘴上装配有孔的防护装置以保护它们不受到破坏性的接触。从该喷嘴喷射的墨通过孔喷到达纸或者其他要打印的基质上。然而，为有效保护该喷嘴，该开孔需要足够小，以最大程度地限制外物的侵入，却仍然允许墨滴通过为宜。优选地，每个喷嘴通过该防护装置中各自的单独的孔来喷墨。然而，就MEMS设备的微观尺寸而言，该防护装置与该喷嘴之间的轻微错位将阻塞墨滴的通路。在硅晶片基板上设置调准结构，用于啮合防护装置上的互补结构，该调准结构能够使喷嘴和其各自的孔在0.1μm的范围之内对准。但是当将防护装置贴附到基板上时，互补结构移动与调准结构啮合会破坏精密的喷嘴结构。
发明内容
因此，本发明提供了一种用于喷墨打印机的打印头的制造方法，该打印头包括：
基板，设有喷嘴阵列，用于将墨喷射至待被打印的介质上；以及
开孔的喷嘴防护装置，用于防止与喷嘴的破坏性接触，该方法包括以下步骤：
采用材料蚀刻以及沉积技术在基板上制作喷嘴，使喷嘴经牺牲材料得到加固；
将该开孔喷嘴防护装置定位在喷嘴的外部，使其开孔与喷嘴精确对准，并且随后，
蚀刻掉加固喷嘴的牺牲材料。
在本说明书中，“喷嘴”一词应该被理解为限定一个开口的元件而不是该开口自身。
在一优选实施例中，在基板上制作调准结构，该调准结构被配置为与开孔的喷嘴防护装置上的互补结构相接合；其中
调准结构和互补结构之间的接合使开孔与喷嘴精确对准，以使该防护装置不会阻塞墨从喷嘴喷射至介质上的正常轨道。
优选地，通过喷嘴防护装置中的一个或者多个开孔注入蚀刻等离子体，以去除防护喷嘴的牺牲材料，该去除的牺牲材料以及蚀刻等离子体通过喷嘴防护装置中的开孔而冲掉。
在一实施例中，该蚀刻等离子体是氧等离子体并且该牺牲材料为聚酰亚胺。在此实施例中，理想的是在调准结构和互补结构之间提供无机密封。
该基板可以是一个硅晶片。该喷嘴防护装置可以具有一个包括开孔的护罩，该护罩通过一体形成的支柱而与该硅基板间隔设置，所述支柱自该护罩延伸以与调准结构接合。一种便利的方式是，该调准结构采用硅基板上的隆起，将其设置在适当的位置以便与支柱接合而保持开孔与喷嘴阵列对齐。
该调准结构必然占据该打印头的表面的一部分区域，而这将对喷嘴的组装密度产生不利影响。相同数目喷嘴所需的额外打印头芯片区域将增加制造该芯片的成本。然而，在对该打印头以及喷嘴防护装置进行的装配不可能充分精确的情况下，基板和防护装置上的集成结构将降低喷嘴的缺陷率。
该喷嘴防护装置可以还包括气体进口，用于引导气体通过该通道，以阻止在该喷嘴阵列上异物颗粒的堆积。在此实施方式中，该气体进口可以被设置在该支柱之中。
值得重视的是，当通过该开口、该喷嘴阵列以及通过该通道输出而引导空气时，在该喷嘴阵列上的异物颗粒的堆积会受到抑制。
该流体进口可以被设置在远离该喷嘴阵列的结合衬垫的支持元件中。
本发明确保易损的MEMS喷嘴在制造和装配打印头过程中受到保护。通过对该打印头配备喷嘴防护装置，该喷嘴结构能够受到保护而避免在其使用年限中被大多数其他表面接触或者碰撞。为了使提供的保护达到最佳，该防护装置形成一个平面护罩，覆盖着该喷嘴的外侧，其中该护罩具有一个通道阵列，所述通道大到足以允许墨滴的喷射，但是却小到足以防止意外的接触或者大多数灰尘颗粒的进入。通过采用硅来制作该护罩，它的热膨胀系数与该喷嘴阵列的热膨胀系数充分匹配。这将有助于防止该护罩中的该通道阵列失去与该喷嘴阵列的精确对准。使用硅也允许使用MEMS技术来精确地微加工该护罩。另外，硅的强度很高并且基本上是不可变形的。
附图说明
现在对于本发明优选的实施方式，仅通过例子并参照附图进行描述，其中：
图1所示为用于喷墨打印头的喷嘴组件的三维示意图；
图2-4为示意图1所示喷嘴组件操作的三维视图；
图5所示为构成具有喷嘴防护装置或密封壁的喷墨打印头的一个喷嘴阵列的三维视图；
图5a所示为具有一个喷嘴防护装置或密封壁的打印头的三维剖面视图；
图5b所示为从隔离每个喷嘴的密封壁处截取的喷嘴的截面平面视图。
图6所示为图5的阵列的部分放大视图；
图7是包括一个喷嘴防护装置而不包括该密封壁的一个喷墨打印头的三维视图；
图7a是具有调准结构打印头的部分放大透视图，该调准结构与喷嘴防护装置上的互补结构接合；
图7b所示为嵌入贴附在聚酰亚胺牺牲层的喷嘴组件的剖面视图；
图7c所示为用于除去环绕喷嘴组件的牺牲材料的蚀刻等离子体气流；
图8a至8r所示为喷墨打印头的喷嘴组件的制作步骤的三维视图；
图9a至9r所示为该制作步骤的剖面侧视图；
图10a至10k所示为在该制作过程的不同步骤中使用的掩模图案。
图11a至11c为示意按照图8和图9的方法制作的喷嘴组件的操作三维视图；以及
图12a到12c所示为按照图8和图9的方法制造的喷嘴组件的操作的剖面侧视图。
具体实施方式
首先参见附图1，根据本发明的喷嘴组件通常由参考数字10来表示。一个喷墨打印头具有多个喷嘴组件10，以阵列14形式排列(图5和图6)在硅基板16上。该阵列14将在下面详细地描述。
该组件10包括一个硅基板或晶片16，在其上面沉积了一个介电层18。在该介电层18上面沉积了一个CMOS钝化层20。
每个喷嘴组件10包括限定一个喷嘴口24的喷嘴22，一个采用杠杆臂26形式的连接件以及一个执行机构28。该杠杆臂26将该执行机构28连接到该喷嘴22。
如图2到4中的详细图示，该喷嘴22包括一个冠顶部分30以及从该冠顶部分30下垂的边缘部分32。该边缘部分32形成了一个喷嘴腔34的部分外壁。在该喷嘴口24与该喷嘴腔34之间液体可以自由流通。需要注意的是该喷嘴口24被凸起的边框36所围绕，它“固定”了在该喷嘴腔34中的墨40主体的一个弯月面38(图2)。
在该喷嘴腔34的底板46上设有一个进墨孔42(在附图的图6中最清楚)。在该孔42与由设置在该基板16中墨入口通道48之间流体连通。
壁部50围绕孔42，并且从基板部分46向上方伸出。如上面所指示的喷嘴22的边缘部分32形成喷嘴腔34的外壁的第一部分，并且该壁部50形成该喷嘴腔34的外壁的第二部分。
壁50在其自由端具有向内指向的凸缘52，起到液体密封的作用，当移动喷嘴22时用以阻止墨泄露，这一点在以下内容将给予详细的描述。值得重视的是，由于该墨40的粘性以及在该凸缘52和该边缘部分32之间间隔的尺寸很小，向内指向的凸缘52以及表面张力对于阻止墨从该喷嘴腔34的逸出起到有效的密封作用。
该执行机构28是一个受热弯曲的执行机构，并且与从该基板16或者更具体地从该CMOS钝化层20向上伸出的固定器54相连。该固定器54安装在导电垫56上，该导电垫56与该执行机构28形成电连接。
该执行机构28包括第一有源梁58，安置在第二无源梁60的上方。在一种优选的实施方式中，梁58和60都是采用或者包括，一种导电陶瓷材料例如氮化钛(TiN)。
梁58和60两者都将其第一末端固定于该固定器54并且将其相反的一端连接到臂26。当使电流通过该有源梁58时，会引起该梁58的热膨胀。对于该无源梁60，没有电流流过，不以相同速率膨胀，因此产生了一个弯曲力矩使该臂26以及该喷嘴22向下朝向基板16移动，如图3所示。这将导致喷嘴口24中喷射出墨，如62所示。当将热源撤离该有源梁58时，即通过使电流停止，喷嘴22返回静止位置，如图4所示。当喷嘴22返回其静止位置时，如图4中66处所示的墨滴颈部断开而形成微墨滴64。然后该微墨滴64移动到例如纸张等打印媒介上。由于微墨滴64的形成，如图4中68所示形成一个“负向”弯月面。此“负向”弯月面68引起墨40内流并进入喷嘴腔34中，从而形成一个新弯月面38(图2)，为墨滴从喷嘴组件10的再次喷射做好准备。
参见图5和图6，对该喷嘴阵列14给予更详细的描述。将阵列14用于一个四色打印头。因此，该阵列14包括四组喷嘴组件70，每组用于一种颜色。每组70具有以两行72和74排列的喷嘴组件10。图6中给出了一个组70的更多细节。
为了在该行72和74中实现喷嘴组件10的紧凑的安装，将行74中的喷嘴组件10相对于行72中的喷嘴组件10偏置或交错设置。另外，将该行72中的该喷嘴组件10互相以充分远的距离而间隔设置，以使行74中的喷嘴组件10的杠杆臂26能够在行72的组件10的相邻喷嘴22之间通过。需要注意的是，每个喷嘴组件10基本上是哑铃形的，以使该行72中的该喷嘴22可以嵌套在该喷嘴22和该行74中的相邻的喷嘴组件10的该执行机构28之间。
另外，要使该行72和74中的喷嘴22安装紧凑，每个喷嘴22基本上是六边形的。
所属领域普通技术人员将会理解：当喷嘴22向基板16移动时，在使用中，由于喷嘴口24相对于喷嘴腔34有一个很小的角度，墨的喷射会略微地偏离垂直方向。图5和图6中所示配置的一个优点是行72和74中的喷嘴组件10的执行机构28以相同方向延伸至行72和74的一侧。因此，从行72中的喷嘴22喷射的墨以及从行74中的喷嘴22喷射的墨相对彼此以相同角度偏移，从而提高了打印品质。
另外，如图5中所示，该基板16具有配置于其上结合垫76，通过该垫56形成与该喷嘴组件10的该执行机构28的电连接。这些电连接是通过该CMOS层(没有示出)而实现的。
参见图5a和5b，将如图5中所示的喷嘴阵列14间隔设置以容纳环绕每个喷嘴组件10的密封结构。该密封结构是一个环绕该喷嘴22的密封壁144，并且从该硅基板16延伸到开孔的喷嘴防护装置80的上侧，以形成一个密封室146。若由于喷嘴的损坏使墨不能正常喷射，则该裂缝受到限制以避免影响周围喷嘴的功能。也可以设想的是，每个密封室146将具有检测出现墨泄露的能力，并对控制该喷嘴阵列14操作的微处理器提供反馈。通过使用容错功能，该损坏可以由该阵列14中剩余的喷嘴来补偿从而保持了打印的品质。
容器壁144必然占据硅基板16的一部分，这样就降低了该阵列中喷嘴的组装密度。随之这也增加了该打印头芯片的生产成本。然而，在制造技术引起较高喷嘴磨损率时，单个的喷嘴密封结构将避免或者至少最小化对该打印品质的不良影响。
所属领域普通技术人员将可以接受，也可以配置密封结构来隔离喷嘴组。分立的喷嘴组提供了更好的喷嘴组装密度，但是通过利用周围的喷嘴组对损坏的喷嘴进行补偿变得更加困难。
参见图7，示出了用于保护该喷嘴阵列的一个喷嘴防护装置。参见先前的附图，除非另外指定，同样的参考数字指示同样的部分。
将一个喷嘴防护装置80安装在该阵列14的硅基板16上。喷嘴防护装置80包括一个护罩82，具有设置在其中的多个孔84。孔84与阵列14的喷嘴组件10的喷嘴口24精确对准，以使当墨从喷嘴口24其中任何一个喷出时，该墨在到达该打印介质之前通过相关的通道。
防护装置80采用硅制作以便具有必要的强度和刚性，以防护该喷嘴阵列14避免在与纸，灰尘或者用户手指的接触时发生损坏。由于采用硅制作该防护装置，其热膨胀系数基本上与该喷嘴阵列匹配。这样做的目的是为了在打印头被加热至其正常的工作温度范围内时，护罩82中的孔84不会失去与该喷嘴阵列14的精确对准。硅也同样十分适用于采用MEMS技术的精确的微细加工，下面将详细讨论与该喷嘴组件10的制造有关的MEMS技术。
护罩82的安装通过分支或支柱86相对于该喷嘴组件10形成间隔的关系。一个支柱86具有设置在其中的进气口88。
在使用中，当阵列14在操作时，空气通过进气口88注入，并被迫与在孔84中移动的墨一起通过该孔84。
在空气中并不夹带墨，因为空气是以与微墨滴64不同的速率通过孔84而注入的。例如，微墨滴64从喷嘴22以大约3m/s的速率喷出。而空气以约1m/s的速率通过孔84而注入。
该空气的用途是保持该孔84没有异物颗粒。存在的一个危险是这些异物颗粒，例如灰尘颗粒，能够落到该喷嘴组件10上，对其操作产生不良影响。通过在喷嘴防护装置80中设置进气口88，可以在很大程度上解除此问题。
在孔84和喷嘴22之间的对准是很关键的。然而，由于MEMS设备的微观尺寸使喷嘴防护装置80的相对喷嘴的精确定位很难实现。如图7a所示，可以对该硅晶片或基板16配置调准结构，例如隆起148，用以与该支柱86的自由端相接合。如果所采用的牺牲材料是聚酰亚胺，则在支撑结构86和隆起148之间夹设无机密封150。可以采用相同的蚀刻和沉积技术将隆起148与该喷嘴22精确地制作在一起。
图7a示出俘获牺牲材料，例如形成该校准调节隆起148的聚酰亚胺。在其他的配置中，额外的隆起148与容器壁144相接合如图5a到图5b所示。在此形式中，隆起148将占据一定表面面积并且对喷嘴的组装密度产生不良的影响，但是它能够有力地保持每个孔84与该对应的喷嘴22的对齐。无机密封150位于该支柱86和隆起148之间。
当然，其他装置也能够形成调准结构，例如晶片基板16中的凹陷或者槽，它们能够与设置在防护装置80上的互补结构相接合。
使用CMOS蚀刻和沉积技术形成的调准结构能够提供0.1μm数量级的对准精度。
当在调准结构148上调节防护装置80位置时，易损的喷嘴22由于与支柱86接触而面临受损的危险。如图7v所示，可以将喷嘴22嵌入在牺牲材料152中，用以防护考虑到80完成对准调节并固定于隆起148。参考图7c，一旦防护装置80就位，保护性的牺牲材料152经氧等离子蚀刻154去除并通过孔84而排出。
参见图8到图10，描述了喷嘴组件10的制作过程。
以硅基板16开始，在晶片16的表面上沉积介电层18。该介电层18是采用大约1.5微米的化学汽相沉积(CVD)氧化物的形式制作的。在层18上旋涂(spin)抗蚀层并且将层18对掩膜100曝光并且随后显影。
在显影后，将层18等离子向下蚀刻到该硅层16。然后将抗蚀层去除并且清洗层18。此步骤形成了进墨孔42。
在图8b中，在该层18上沉积了大约0.8微米的铝102。将抗蚀层旋涂并且将铝102对掩膜104曝光并且随后显影。在显影以后，将铝102等离子向下蚀刻到该氧化层18，将该抗蚀层去除并且对该设备进行清洗。此步骤形成该结合垫并且与该喷墨执行机构28互连。此互连至一个NMOS驱动晶体管和一个电源层，具有制作在该CMOS层(没有示出)中多个连接。
沉积约0.5微米的PECVD氮化物作为CMOS钝化层20。将抗蚀层旋涂在层20并将其对掩膜106曝光然后显影。在显影之后，将该氮化物等离子向下蚀刻到铝层102以及该入孔42区域中的硅层16。将该防护层去除并且对该设备进行清洗。
在层20上旋涂牺牲材料层108。层108采用6微米厚度的光敏材料聚酰亚胺或者大约4μm的高温抗蚀层。将层108进行软烘并随后将其曝光于掩膜110之后显影。然后，若层108是由聚酰亚胺构成，则将层108在400℃硬烘一个小时，若层108是高温抗蚀层则在大于300℃烧硬。需要注意的是在附图中对掩膜110的设计中考虑到了由收缩引起的聚酰亚胺层108对图案的变形。
在下一步中，如图8e所示，涂敷了第二牺牲层112。该层112或者是2μm的旋涂上的光敏材料聚酰亚胺，或者是大约1.3μm的高温抗蚀层。将该层112软烘并随后曝光于掩膜114。在曝光于掩膜114之后将该层112显影。然后，若该层112采用聚酰亚胺则在400℃硬烘大约一个小时，或者若该层108是高温抗蚀层则在大于300℃硬烘大约一个小时。
随后沉积一个0.2微米的多层金属层116。此层116的部分形成了该执行机构28的无源梁60。
该层116的是通过在溅射50的氮化钽(TaN)之后在300℃左右溅射1,000的氮化钛(TiN)而形成的。再溅射50的TaN层和1000的TiN之后再溅射1000厚度的TiN。其他可以用于替代TiN的材料是TiB2、MoSi2或者(Ti，Al)N。
随后将该层116对掩膜118曝光、显影并且等离子向下蚀刻到该层112，在此之后将涂敷到该层116抗蚀层湿剥除，注意不要去除已固化的层108或112。
通过旋涂4μm光敏聚酰亚胺或者约2.6μm的高温护蚀层而涂敷第三牺牲层120。对该层120进行软烘，随后曝光于掩膜122。随后该曝光层显影并且随后进行硬烘。在采用聚酰亚胺的情况下，将该层120在400℃温度下硬烘大约一个小时，在该层由高温抗蚀层构成的情况下，在大于300℃温度下进行硬烘。
将第二多层金属层124涂敷至层120。该层124的成分与该层116的成分相同并且以同样的方式涂敷。需要注意的是层116和124都是导电层。
将层124对掩膜126曝光并且随后被显影。将层124等离子向下蚀刻到该聚酰亚胺或防护层120，其后将覆盖该层124的防护层湿剥除，并注意不要将已固化的层108或112或120去除。需要注意的是该层124的剩余部分形成执行机构28的有源梁58。
通过旋涂4μm光敏聚酰亚胺或者大约2.6μm的高温抗蚀层而涂敷第四牺牲层128。将层128进行软烘，曝光于掩膜130并且随后显影以留下如附图的图9k中所示的岛状部分。层128的剩余部分在采用聚酰亚胺的情况下在400℃温度进行硬烘大约一个小时，当采用高温抗蚀层的情况下，在大于300℃的温度进行硬烘。
如图8I中所示沉积一高杨氏模量的介电层132。层132由大约1μm的硅氮化物或铝氧化物构成。层132是在低于牺牲层108，112，120，128的硬烘温度下沉积的。此介电层132需要的基本特性是高弹性模量，化学惰性，以及与TiN的良好粘合。
通过旋涂上2μm的光敏聚酰亚胺或者大约1.3μm的高温抗蚀层而形成第五牺牲层134。对该层134进行软烘，并对掩膜136曝光，随后进行显影。在采用聚酰亚胺的情况下将该层134的剩余部分在400℃温度下硬烘大约一个小时，当采用高温抗蚀层的情况下，在大于300℃温度下硬烘。
介电层132是经等离子向下蚀刻到牺牲层128，注意不要去除任何牺牲层134。
此步骤形成喷嘴组件10的喷嘴口24、杠杆臂26以及固定器54。
沉积一个高杨氏模量的介电层138。该层138是通过在低于牺牲层108，112，120以及128的硬烘温度下沉积0.2微米的硅氮化物或者铝氮化物而形成的。
然后，如图8p所示，将该层138各向异性地等离子蚀刻到0.35微米的深度。此蚀刻是为了清除整个表面的除该介电层132和该牺牲层134的侧壁之外的绝缘物。此步骤产生了围绕在喷嘴口24周围的喷嘴边框36，它如上面所述“限制”了该墨的弯月面。
采用一个紫外(UV)分离带140。4μm的抗蚀层被旋涂到该硅晶片基板16的后面。将该晶片基板16对掩膜142曝光，以回蚀该晶片基板16以形成喷墨通道48。随后将该抗蚀层从该晶片16去除。
对该晶片基板16的后面涂敷另一UV分离带(没有示出)并且该将分离带140去除。在氧等离子体中将该牺牲层108，112，120，128和134剥除，以形成如附图8r和9r中所示的最终喷嘴组件10。为了便于参考，在这两个图采用与图1相同的参考数字来表示喷嘴组件10的相关元件。图11和12说明了该喷嘴组件10的操作过程，该喷嘴组件是由如上述过程而制造的，参照图8和9，并且这些附图与图2到图4相对应。需要注意的是：本领域的技术人员可以在不脱离广义描述的本发明的精神或范围的情况下，可以对本发明进行很多改变和/或修改。因此，本实施例在各个方面都应被看作描述性的而非限定性的。

Claims (10)

1.一种制造用于喷墨打印机的打印头的方法，该打印头包括：
基板，设有喷嘴阵列，用于将墨喷射到待被打印的介质上；以及
开孔的喷嘴防护装置，用于防止与喷嘴的破坏性接触，该方法包括以下步骤：
采用材料蚀刻以及沉积技术在基板上形成喷嘴，使该喷嘴经牺牲材料得到加固；
将该开孔喷嘴防护装置设置在该喷嘴的外部上，使其开孔与喷嘴精确对准，并且随后，
蚀刻掉加固喷嘴的牺牲材料。
2.如权利要求1所述的方法，其中在基板上形成调准结构，该调准结构被配置为与开孔的喷嘴防护装置上的互补结构相接合；其中
调准结构和互补结构之间的接合使所述开孔与喷嘴精确对准，以使该防护装置不会阻塞墨从喷嘴喷射至介质上的正常轨道。
3.如权利要求1所述的方法，其中通过喷嘴防护装置中的一个或者多个开孔注入蚀刻等离子体，以去除防护喷嘴的牺牲材料，该去除的牺牲材料以及蚀刻等离子体通过喷嘴防护装置中的开孔而冲掉。
4.如权利要求3所述的方法，其中该蚀刻等离子体是氧等离子体并且该牺牲材料为聚酰亚胺。
5.如权利要求2述的方法，其中在调准结构和互补结构之间提供无机密封。
6.如权利要求1所述的方法，其中该基板是一个硅晶片。
7.如权利要求6所述的方法，其中该喷嘴防护装置具有一个包括开孔的护罩，该护罩通过一体形成的支柱而与该硅基板间隔设置，所述支柱自该护罩延伸用于与调准结构相接合。
8.如权利要求2述的方法，其中该调准结构是硅基板上的隆起，其被定位为与所述支柱接合以保持开孔与喷嘴阵列对齐。
9.如权利要求1所述的方法，其中该喷嘴防护装置还包括气体进口，用于引导气体通过该通道，以阻止在该喷嘴阵列上异物颗粒的堆积。
10.如权利要求9所述的方法，其中，该气体进口在该支柱中。
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