CN1309816A - 半绝缘碳化硅基底上基于氮化物的晶体管 - Google Patents

半绝缘碳化硅基底上基于氮化物的晶体管 Download PDF

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CN1309816A
CN1309816A CN99808532A CN99808532A CN1309816A CN 1309816 A CN1309816 A CN 1309816A CN 99808532 A CN99808532 A CN 99808532A CN 99808532 A CN99808532 A CN 99808532A CN 1309816 A CN1309816 A CN 1309816A
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斯科特·T·谢帕德
斯科特·T·阿伦
约翰·W·帕尔莫
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Abstract

一种高电子迁移率晶体管(HEMT)(10)包括一个半绝缘碳化基底(11),在基底上是氮化铝缓冲层(12),在缓冲层上面是绝缘的氮化镓层(13),氮化镓层上是活性氮化铝镓结构(14),其上是钝化层(23),和至氮化铝镓结构的源、漏极和栅接点(21,22,23)。

Description

半绝缘碳化硅基底上基于氮化物的晶体管
本发明涉及高频晶体管，尤其是一种高电子迁移率晶体管(HEMT)，其结合了基于氮化物的活性层和碳化硅基底，本发明是在美国陆军研究实验室合同No.DAAL 01-96-C-3604下发展起来的，在本发明中(美国)政府也有一定的权利。
本发明涉及由半导体材料形成的晶体管，其适用于高功率、高温和高频的应用。正如熟悉半导体的人们所知，硅(Si)和砷化镓(GaAs)等材料已广泛应用于供低功率、低频(如硅)应用的半导体装置，但是由于这些大家都熟悉的物质具有较窄的能带隙(室温下硅为1.12 eV，砷化镓为1.42eV)和较低的击穿电压，使得他们不能渗透到高功率、高频应用的理想程度。
因此，在高功率、高温、高频的应用和器件方向的兴趣就转向具有宽能带隙的半导体材料，如碳化硅(αSiC室温下为2.996eV)和第三族氮化物(例如氮化镓GaN在室温下为3.36eV)，与硅和砷化镓相比，这些材料具有较高的电场击穿强度和较高的电子饱和速率。
一种特别关注的器件为高电子迁移率晶体管(HEMT)也被称为调制掺杂场效晶体管(MODFET)。这些器件在相当多的情况下都具有操作优势，因为二维电子气(2DEG)被形成在两个具有不同的能带隙能量的半导体材料的异质结上，其中具有较小能带隙的物质具有较大的电子亲和势。2DEG是不掺杂的、较小能带隙材料中的积聚层，并具有非常高的面电子密度，量级在1012-1013载流子/平方厘米。另外，由掺杂的、较宽能带隙的半导体材料发出的电子转移到2DEG，由于减少了的电离杂质的散射，形成高电子迁移率。
高载体浓度和高载体迁移率的结合为高电子迁移率晶体管(HEMT)提供了一个相当大的跨导，和比高频应用的金属半导体场效晶体管强的性能优势。
氮化镓/氮化铝镓(GaN/AlGaN)材料体系中制成的高电子迁移率晶体管具有产生大RF能量的潜力，这是因为他们独特的材料特性的结合，即包括前面提到的高击穿场、宽能带隙、大的传导带偏移和高饱和电子漂移速率。2DEG中电子的主要部分被归因于氮化铝镓的假同晶应变。参见：P.M.Asbeck等Electronics Letters,Vol.33,No.14,pp.1230-1231(1997)；和E.T.Yu等，Applied Physics Letters,Vol.71,No.19,pp.2794-2796(1997)。
GaN/AlGaN体系中的HEMT已得到验证，Khan等的专利号为5,192,987和5,296,395美国专利(分别涉及原始的和分案)，描述了在缓冲层和基底上的由AlGaN和GaN之间的异质结形成的高电子迁移率晶体管(HEMT),Gaska等描述了其它的器件“High-TemperaturePerformance of AlGaN/GaN HFET’s on SiC Substrates”,IEEEElectron Device Letters,Vol.18,No.10,October 1997 492页；Ping等“DC and Microwave Performance of High-Current AlGaN/GaNHeterostructure Field Effect Transistors Grown on P-Type SiCSubstrates”IEEE Electron Letters,Vol.19,No.2,February 1998,54页，这些器件中的一些ft值达到67千兆赫(K.Chu等，WOCSEMMAD,Monterey,CA,February 1998)，高功率密度在10GHz频率上达到2.84W/mm(G.Sullivan et al.,“High-Power 10-GHz Operation ofAlGaN HFET’s in Insulating Sic”IEEE Electron Device Letters,Vol.19,No.6,1998年6月，198页；和Wu等，IEEE Electron DeviceLetters,Volume 19,No.2,50页，1998年2月)。
尽管有这些进展，对应这些结果的门外围设备太少而不能产生重要的具有高效、高伴随增益的微波功率，因此这些器件与其说有实用价值不如说更有学术价值。
这种类型的高能半导体器件是在微波频率波段工作，并被用于RF通信网络和雷达应用，极具潜力大幅度降低便携式电话基地站发射机的复杂性和花费，高功率微波半导体设备的其他潜在应用还包括取代相对昂贵的电子管和传统微波炉的变压器，增加卫星发射机的使用寿命，提高个人通信系统基地站发射机的效率。
因此，还需继续改善基于高频高能半导体的微波设备
本发明的目的是提供高电子迁移率晶体管(HEMT)，其利用第三族氮化物的电子特征，并优于现有的和相关的设备。
本发明以高电子迁移率晶体管(HEMT)来实现这一目的，这种晶体管包括一个半绝缘碳化硅基底，基底上是氮化铝缓冲层，缓冲层上是氮化镓绝缘层，氮化镓层上是氮化铝镓活性结构，在氮化铝镓活性结构上是钝化层，并分别有源、漏和栅极与氮化铝镓活性结构接触。
本发明前面提到的和其他的目的、本发明的优点和实现这些特点的方法将在下文详述而变得明确，并附有图。
图1是根据本发明设计的晶体管的截面图
图2是根据本发明设计的晶体管的电流电压(IV)特征曲线
图3是根据本发明设计的另一个晶体管的两个小讯号特征的两组曲线
图4是根据本发明设计的另一个晶体管的增益功率扫描结果曲线
本发明是高电子迁移率晶体管(HEMT)，整体结构10描述如图1的截面图所示，晶体管10包括半绝缘碳化硅(SiC)基底11，它在较佳实施例中包括4H多型碳化硅，其他可选择的碳化硅多型体还包括3C,6H和15R多型体。“半绝缘体”这一术语用于描述性的并不是绝对意义上的，它通常是指室温下电阻系数等于或大于1×105Ω-cm的碳化硅大块晶体。这项技术的其他内容将参照这样的电阻系数作为“绝缘”，但那些熟悉技术的人会理解所指的特征。
在基底11上面是氮化铝缓冲层12，其在碳化硅基底和晶体管其它部分之间提供了适宜的晶体结构过渡。碳化硅比三氧化二铝(Al2O3)具有更紧凑的与第三组氮化物相配的晶体点阵，对第三族氮化物器件来说，三氧化二铝是非常通用的基底材料，较紧凑的点阵相配比常用的蓝宝石能使第三族氮化物薄膜具有更高的品质。最重要的是，碳化硅还具有非常高的热传导性，这样使碳化硅上的第三族氮化物器件输出功率不象诸如蓝宝石上的相同器件被基底的热耗散所限制。而且，半绝缘碳化硅基底的应用还使提供器件隔离能力和减小寄生电容的能力，这样也使得易加工的商业器件成为可能。
这里所提到的术语“第三族氮化物”是指介于氮和第三族周期表中的元素之间有半导体特性的化合物，通常是铝(Al)、镓(Ga)、铟(In)。该术语还指三元的或三重的化合物如AlGaN和AlInGaN。正如在这项技术中众所周知的，第三族元素能结合氮形成二元的(如GaN)、三元的(如AlGaN)和三重的(如AlInGaN)化合物。这些化和物都具有经验式，它们都由1摩尔氮与整1摩尔的第三族元素化合而成，相应地常用AlxGa1-xN其中1＞x＞0来描述。
适当的碳化硅基底可由北卡罗莱那州的达拉谟CREE研究公司提供，其也是本发明的受让人，制做方法由科学文献和大量共同转让的美国专利提供，这些专利包括但不限于Nos.Re.34,861；4,946,547；和5,200,022。类似地，第三族氮化物的外延生长技术已得到相当好的发展，并在适当的科学文献和共同转让美国专利第5,210,051；5,393,993；5,523,589；和5,292,501中有报告。
HEMT10还包括一个位于氮化铝缓冲层12上的绝缘氮化镓层13，它比缓冲层氮化铝12厚(总共1-2微米的量级)，可具有厚度介于100到5000。氮化镓层13生长以致电子载流子浓度低于1015电子/cm3，这样可以使感兴趣的高频应用达到足够绝缘。
HEMT10还包括一个位于氮化镓层13上的以括弧14表示的活性结构，其用来提供13和14层之间的界面上传导带中的能量偏移，带偏移产生一个狭窄的电势阱可以使自由电子驻留。这样就形成了一个非常薄的高电子密度的薄片；即二维电子气(2DEG)，它赋予器件的性能特征，正如那些熟悉这些器件的人所知，其效果与具有薄沟道的MESFET类似。
在最优选实施方案中，AlGaN部分14包括了一个三层结构，分别是在氮化镓层13上的第一不掺杂氮化铝镓层15、在第一不掺杂层15上的传导掺杂(最好是n型)氮化铝镓层16和在传导掺杂AlGaN层16上的第二不掺杂AlGaN层17。在第二可行性实施方案中三个AlGaN层15、16、17都有意被做成不掺杂的，同样可期望层15由InGaN或AlInGaN形成，这样制作的器件将具有在此所描述的优良属性和特征。
第三族氮化物体系中的异质结构的非常重要的属性对AlGaN/GaNHEMT是非常重要的。除了13层和14层之间的能带偏移而产生电子聚积，由AlGaN部分14相对于GaN层13的假晶应变使得自由电子数量大量增加。由于局部化的压电效应，有应变比没有应变更能使电场增强和电子密度增大。这样，2DEG的面电子密度能达到量级1013个电子/平方厘米。
向氮化铝镓活性部件14上形成源、漏和栅接点(图1中20、21、22)，在优化实施方案中它们向不掺杂AlGaN层17制成。尽管应理解栅接点可以直接装于现用的器件的掺杂AlGaN部分上，但不掺杂AlGaN层17，也被称为是阻碍层，提高了晶体管整流(肖特基)栅接点的特性。
图1中显示了器件沿电流方向的截面图，电子流从源接点经AlGaN/GaN交界面上的高传导2DEG传到漏极接点。加于栅电极上的电压以静电的方式直接控制栅下的2DEG中的电子数量，以此控制从源到漏极的电子流。栅的长度(LG)，栅到源的距离(LGs)，栅到漏极的距离(LGD)为重要尺寸通常以微米标注。垂直于电流方向的HEMT(通常指向纸面)的大小称作器件的宽度或栅的周边，在此单位为毫米(mm)。
类似地，第一不掺杂AlGaN层15提供了一个间隔层，将2DEG中的自由电子和掺杂层16后面的散射中心隔离开，这样就通过将这些散射中心与势阱中的电子隔离开来提高电子迁移率，否则，这些散射中心将完全控制电子迁移率。
本发明已确定当器件包括一个在氮化铝镓活性结构14上的钝化层23，器件的性能特征将大大提高，如图1所示，钝化层23较好地覆盖源20、漏极21和栅22的直接接触部分，并在钝化层23上相应的位置分别留有开口处24、25和26，可用电线与外界连接。尽管申请人既不愿也不想受任何特别理论限制，看来有整流金属触点的高频器件表面无端头的化学键能产生电荷状态，并通过俘获一部分本应流入MESFET沟道或高电子迁移率晶体管(HEMT)的二维电子气(2DEG)的电子来破坏器件运行。本发明的钝化层23看来能消除或最小化这样或类似的问题。
在本发明的优选实施方案中，源触点20和漏极触点21被适宜地由钛、铝和镍的合金形成，整流栅触点也适宜地选自钛、铂、铬、钛钨合金和硅化铂，在优选实施方案中欧姆触点是由镍、硅、和钛的合金形成，是通过将这些材料一层层沉积，再将它们退火制成。由于合金体系排除了铝，就避免了当退火温度超过铝的熔点(660℃)时在器件表面形成的有害的铝污染。
钝化层23适宜地选自氮化硅(Si3N4)和二氧化硅(SiO2)，氮化硅尤其适合。钝化层23由低压化学气相沉积(LPCVD)或增强等离子化学气相沉积(PECVD)形成。
正如那些熟悉这些器件的人所知，三元化合物氮化铝镓通常由通式AlxGa1-xN给出，其中1大于X且X大于0(1＞X＞0)。本发明中，分别在AlGaN层15、16和17中X值可以相同也可以不同，在优化方案中X值取0.15，这样分子式就变为Al0.15Ga0.85N，这样，铝的较高的摩尔比(较高的X值)提供较好的面负荷，但降低了晶体质量，且非常难于生长。相应地，尽可能高地适当选择铝的摩尔比而不造成本质的晶体问题或产生大的电流，现在，铝的摩尔比介于0.1-0.5之间被视为适宜的。
根据本发明设计的器件，其特征在于具有非常高的性能，比到此为止其他已证实的要好得多。尤其是根据本发明设计的高电子迁移率晶体管(HEMT)其特征在于测得其输出功率至少2瓦特/毫米，一个二毫米器件的整体输出功率至少为4瓦特，这些装置的模拟表明其可以达到输出功率4和5瓦特/毫米，因为装置可期望达到40毫米，其整体输出功率可期望达到160-200瓦特。
然而，由这一技术领域的一般技术人员应知，高电子迁移率晶体管(HEMT)的最大宽度是频率特定的，较宽的器件被限制为低频，较窄的器件被利用为高频。例如，对10Ghz装置的最大宽度为20mm，而对3GHz，装置的宽度在50-60mm。
相应地，在另一方面，本发明可被视为包括了一个半绝缘碳化硅基底和一个介于氮化镓和氮化铝镓之间的异质结的高电子迁移率晶体管，其特征在于如图2，或图3，或图4所示的性能特征。
图2-4的描述
图2-4显示了根据本发明的高电子迁移率晶体管(HEMT)的许多特殊特征。图2显示了1毫米器件输出特征，其栅长度(Lg)是0.45微米，栅到源的距离(Lgs)是1微米，栅到漏极的距离(Lgd)为1.5微米。栅电压为2伏特时开始栅扫描，接着逐渐以每步1伏特递减，产生图中曲线的特征系列。如图2所示，当栅电压为-2V时电流被有效切断。
图3是2个不同变量曲线：相应频率为1-100千兆赫(GHz)的短路电流增益的绝对值(|h21|)和最大有效增益(MAG分贝数)。图3中的频率刻度为对数，图3还列出了晶体管的尺寸，显示了一个根据本发明的0.125mm高电子迁移率晶体管(HEMT)。图3表明，工作单位增益频率(ft)由h12的绝对值是0dB的点来确定。-6dB/倍频程的线用数学外推法可知ft的保守估计值大约为28GHz。
图4显示了根据本发明的1.5mm高电子迁移率晶体管(HEMT)10HGz功率扫描的特征，漏电压为32V，并且图4还给出了输出功率、功率附加效率和增益。晶体管的大小也被加在图4上，图的水平轴是输入功率。
例子
本发明中，构成在半绝缘4H碳化硅基底上的氮化镓/氮化铝镓高电子迁移率晶体管(HEMT)在10GHz具有输出功率为4瓦特CW(2.0W/mm)和-1dB增益压缩，此增益压缩从具有29％的功率附加效率的2mm栅宽度(16×125μm)和10dB的伴随增益获得。到现在为止，这代表第三族氮化物高电子迁移率晶体管(HEMT)在X波段得到了最大总功率和伴随增益。
如图1所示，其上层结构包括AlN缓冲层、2μm的不掺杂GaN层和27nm的Al0.14Ga0.86N。AlGaN罩有一个5nm不掺杂间隔层、一个12nm施主层和一个10nm不掺杂阻碍层。器件通过台面蚀刻隔离。钛/铝/镍触点在900℃退火而成欧姆触点。整个直径为35mm的碳化硅晶片，接触电阻和面电阻的平均值分别为0.36Ω-mm和652Ω/平方，显示了在一个大区域内高质量的2DEG。
图2显示了具有LG=0.45、LGS=1.0和LGD=1.5μm的1mm宽高电子迁移率晶体管(HEMT)的典型输出特征，电流峰值在VGS=+2V达到680mA/mm，接近VGS=-0.5V，200mS/mm的最大外跨导表明这些器件的优良电流处理能力，这些器件的性能尺度适合所有范围从125μm到2mm的栅宽度。图3显示了一个0.35μm的装置在VDS=20V和VgS=-1V时的小信号增益测量(Δ=|h21|和0=MAG)。外推单位增益频率ft是28GHz。最大有效增益(MAG)保持在高至网络分析器的最高频率。从低于35GHz的数据中抽取的小信号参数被用于模拟功率增益(图3中的点线)，估计fMAX是114GHz.最大有效增益(MAG)在10GHz为13.8dB。
晶片上负荷牵引的测量在10GHz，漏极偏压在32V时进行。图4显示了1.5mm高电子迁移率晶体管(HEMT)的功率扫描，这个高电子迁移率晶体管(HEMT)的LG=0.45、LGS=1.0和LGD=1.5μm。输入功率上升到22dBm线性增益维持在大约12dB。总RF功率是3.54瓦特(2.37W/mm),PAE为28.3％。在只有1dB压缩时伴随增益达到11dB。在范围在1-2mm的其他大型器件中取样表明在1dB压缩时功率密度可达到或超过2W/mm，其中一些2mm器件在4瓦特运行。一个1.5mm高电子迁移率晶体管(HEMT)晶片的最大功率在10HGz时为3.9W(2.6W/mm)并有2dB的增益压缩。值得注意的是在测试压缩期间，器件并没有降级，回到高功率测量前的同样性能。
通过图示和说明，揭示了本发明的主要实施方案，并且尽管用了特殊的术语但他们只用于一般的和描述性的含义，并没有限制的意图，有关本发明的范围将在权力要求中提出。

Claims (19)

1．一种高电子迁移率晶体管(HEMT)包括：
一个半绝缘碳化硅基底；
一个在所述基底上的氮化铝缓冲层；
一个在所述缓冲层上的绝缘氮化镓层；
一个在所述氮化镓层上的氮化铝镓活性结构；
一个位于所述氮化铝镓活性结构上的钝化层；和
接至氮化铝镓活性结构上的各源、漏和栅接点。
2．根据权利要求1的HEMT，其中所述氮化铝镓活性结构包括：
一个在所述氮化镓绝缘层上的第一不掺杂氮化铝镓层；
一个在所述不掺杂氮化铝层上的传导掺杂氮化铝镓层；以及
一个在所述传导掺杂氮化铝镓层上的第二不掺杂氮化铝镓层。
3．根据权利要求2的HEMT，其中：
所述钝化层在所述第二不掺杂氮化铝镓层上；
所述氮化铝镓活性结构包括一个不掺杂氮化铝镓层；以及
所述钝化层选自二氧化硅和氮化硅。
4．根据权利要求1的HEMT，其中所述基底包括4H多型碳化硅和具有高于105Ω-cm的体电阻率。
5．根据权利要求1的HEMT，其中：
所述源和漏接点包括钛、铝和镍的合金或钛、硅和镍的合金；和
所述整流栅接点选自钛、铂、铬、钛钨合金和硅化铂。
6．一种高电子迁移率晶体管(HEMT)包括：
一个半绝缘碳化硅基底；
两种不同的第三族氮化物半导体材料之间的异质结构；以及
一个位于所述异质结构和所述基底之间的氮化铝缓冲层。
7．根据权利要求6的HEMT，其中：
所述异质结构包括相邻的氮化铝镓(AlGaN)层和氮化镓层
(GaN)；
所述氮化镓层是不掺杂的；以及
所述的氮化铝镓层由在氮化镓层上的第一不掺杂AlGaN层；
在所述第一不掺杂AlGaN层上的施主掺杂AlGaN层；以及
在所述施主掺杂AlGaN层上的第二不掺杂AlGaN层形成的。
8．根据权利要求7的HEMT，其中，所述氮化铝缓冲层在所述基底上，并且所述氮化镓层在所述缓冲层上。
9．根据权利要求6的HEMT，且进一步包括：
至所述活性层的欧姆接点，以确定所述HEMT的源和漏；以及
至所述活性层的整流接点，以确定所述HEMT的栅极。
10．根据权利要求6的HEMT，其中，所述源和漏极接点包括钛、硅和镍合金。
11．根据权利要求10的HEMT且进一步包括一个在所述栅极和所述整流接点上并且在所述异质结上的一个钝化层，所述钝化层选自氮化硅和二氧化硅。
12．一种高电子迁移率晶体管(HEMT)包括半绝缘碳化硅基底和氮化镓(GaN)和氮化铝镓(AlGaN)之间的异质结，其特征在于性能特征选自图2、图3和图4的性能特征。
13．一种高电子迁移率晶体管(HEMT)包括：
一个半绝缘碳化硅基底；
两种不同的第三族氮化物半导体材料之间的异质结构；
至所述异质结材料的欧姆接点，以确定所述晶体管的各源、栅和漏部分；
一个钝化层，覆盖所述异质结材料的顶表面，并至少覆盖所述欧姆接点的多个部分。
14．根据权利要求13的HEMT，其中：
所述钝化层选自氮化硅和二氧化硅；
所述异质结包括相邻的氮化铝镓层(AlGaN)和氮化镓层(GaN)；以及
所述HEMT进一步包括所述基底和所述异质结构之间的氮化铝缓冲层。
15．根据权利要求14的HEMT，其中：
所述氮化镓层是不掺杂的；以及
所述氮化铝镓层是由在所述氮化镓层上的第一不掺杂AlGaN层；在所述第一不掺杂AlGaN层上的施主掺杂AlGaN层形成的；
并且在所述施主掺杂AlGaN层上是第二不掺杂AlGaN层。
16．根据权利要求15的HEMT，其中，所有三个所述AlGaN层都有相同的Al和Ga克分子分数。
17．根据权利要求15的HEMT，其中，所述三层AlGaN层中的至少两层有不同的Al和Ga克分子分数。
18．根据权利要求14的HEMT，其中，所述氮化铝缓冲层在所述基底上，并且所述氮化镓层在所述缓冲层上。
19．根据权利要求13的HEMT，其中：
所述欧姆接点包括钛、铝和镍合金，所述整流栅接点选自钛、铂、铬、钛钨合金和硅化铂；以及
所述源和漏极接点包括钛、硅和镍合金。
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