CN1505841A - 具有不对称薄窗的eeprom单元 - Google Patents
具有不对称薄窗的eeprom单元 Download PDFInfo
- Publication number
- CN1505841A CN1505841A CNA028091337A CN02809133A CN1505841A CN 1505841 A CN1505841 A CN 1505841A CN A028091337 A CNA028091337 A CN A028091337A CN 02809133 A CN02809133 A CN 02809133A CN 1505841 A CN1505841 A CN 1505841A
- Authority
- CN
- China
- Prior art keywords
- oxide
- region
- polysilicon strip
- field oxide
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012546 transfer Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 64
- 229920005591 polysilicon Polymers 0.000 claims description 64
- 238000007667 floating Methods 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 37
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 230000000694 effects Effects 0.000 claims description 16
- 239000011248 coating agent Substances 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 9
- 230000008569 process Effects 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims 6
- 238000012797 qualification Methods 0.000 claims 3
- 230000005611 electricity Effects 0.000 claims 2
- 238000001312 dry etching Methods 0.000 claims 1
- 230000005641 tunneling Effects 0.000 abstract 1
- 238000007334 copolymerization reaction Methods 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 6
- 230000005684 electric field Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000010276 construction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 230000000873 masking effect Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 210000003323 beak Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Abstract
Description
Claims (30)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/847,810 | 2001-05-01 | ||
US09/847,810 US6369422B1 (en) | 2001-05-01 | 2001-05-01 | Eeprom cell with asymmetric thin window |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1505841A true CN1505841A (zh) | 2004-06-16 |
CN1263152C CN1263152C (zh) | 2006-07-05 |
Family
ID=25301568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028091337A Expired - Fee Related CN1263152C (zh) | 2001-05-01 | 2002-03-11 | 具有不对称薄窗的eeprom单元 |
Country Status (9)
Country | Link |
---|---|
US (2) | US6369422B1 (zh) |
EP (1) | EP1388172A1 (zh) |
JP (1) | JP2004527128A (zh) |
KR (1) | KR20040015239A (zh) |
CN (1) | CN1263152C (zh) |
CA (1) | CA2445592A1 (zh) |
NO (1) | NO20034843L (zh) |
TW (1) | TW548782B (zh) |
WO (1) | WO2002089214A1 (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100456495C (zh) * | 2005-04-29 | 2009-01-28 | 海力士半导体有限公司 | 存储器的晶体管结构及其制造方法 |
CN102544111A (zh) * | 2010-12-29 | 2012-07-04 | 精工电子有限公司 | 半导体非易失性存储装置 |
CN103218468A (zh) * | 2012-01-18 | 2013-07-24 | 台湾积体电路制造股份有限公司 | 用于生成最优半导体部件布局的方法和系统 |
CN101752381B (zh) * | 2008-12-10 | 2013-07-24 | 上海华虹Nec电子有限公司 | Otp器件结构及其制备方法 |
CN104733461A (zh) * | 2013-12-23 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | Eeprom的结构及其制造方法 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6624027B1 (en) * | 2002-05-09 | 2003-09-23 | Atmel Corporation | Ultra small thin windows in floating gate transistors defined by lost nitride spacers |
US20050239250A1 (en) * | 2003-08-11 | 2005-10-27 | Bohumil Lojek | Ultra dense non-volatile memory array |
US6905926B2 (en) * | 2003-09-04 | 2005-06-14 | Atmel Corporation | Method of making nonvolatile transistor pairs with shared control gate |
US7755162B2 (en) * | 2004-05-06 | 2010-07-13 | Sidense Corp. | Anti-fuse memory cell |
US8735297B2 (en) | 2004-05-06 | 2014-05-27 | Sidense Corporation | Reverse optical proximity correction method |
KR101144218B1 (ko) * | 2004-05-06 | 2012-05-10 | 싸이던스 코포레이션 | 분리 채널 안티퓨즈 어레이 구조 |
US9123572B2 (en) | 2004-05-06 | 2015-09-01 | Sidense Corporation | Anti-fuse memory cell |
CN100403551C (zh) * | 2005-03-08 | 2008-07-16 | 联华电子股份有限公司 | 高压元件结构 |
US20070166971A1 (en) * | 2006-01-17 | 2007-07-19 | Atmel Corporation | Manufacturing of silicon structures smaller than optical resolution limits |
KR100784082B1 (ko) * | 2006-06-29 | 2007-12-10 | 주식회사 하이닉스반도체 | 반도체 메모리 소자 및 그것의 제조 방법 |
US20080119022A1 (en) * | 2006-11-22 | 2008-05-22 | Atmel Corporation | Method of making eeprom transistors |
KR100789409B1 (ko) * | 2007-01-02 | 2007-12-28 | 삼성전자주식회사 | 이이피롬 소자 및 그 제조방법 |
CN101989551B (zh) * | 2009-08-06 | 2012-01-25 | 中芯国际集成电路制造(上海)有限公司 | 不对称晶体管的形成方法 |
WO2014066997A1 (en) * | 2012-10-29 | 2014-05-08 | Sidense Corporation | A reverse optical proximity correction method |
US10840333B2 (en) * | 2018-10-31 | 2020-11-17 | Taiwan Semiconductor Manufacturing Company Limited | Semiconductor arrangement and method of manufacture |
US11515314B2 (en) * | 2020-06-04 | 2022-11-29 | Globalfoundries Singapore Pte. Ltd. | One transistor two capacitors nonvolatile memory cell |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5103814A (en) | 1988-04-28 | 1992-04-14 | Timothy Maher | Self-compensating patient respirator |
US5334550A (en) | 1989-01-09 | 1994-08-02 | Texas Instruments Incorporated | Method of producing a self-aligned window at recessed intersection of insulating regions |
US5066992A (en) | 1989-06-23 | 1991-11-19 | Atmel Corporation | Programmable and erasable MOS memory device |
US5102814A (en) | 1990-11-02 | 1992-04-07 | Intel Corporation | Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions |
US5086325A (en) | 1990-11-21 | 1992-02-04 | Atmel Corporation | Narrow width EEPROM with single diffusion electrode formation |
US5094968A (en) | 1990-11-21 | 1992-03-10 | Atmel Corporation | Fabricating a narrow width EEPROM with single diffusion electrode formation |
US5198381A (en) | 1991-09-12 | 1993-03-30 | Vlsi Technology, Inc. | Method of making an E2 PROM cell with improved tunneling properties having two implant stages |
US5379253A (en) | 1992-06-01 | 1995-01-03 | National Semiconductor Corporation | High density EEPROM cell array with novel programming scheme and method of manufacture |
US5424233A (en) | 1994-05-06 | 1995-06-13 | United Microflectronics Corporation | Method of making electrically programmable and erasable memory device with a depression |
US5640032A (en) | 1994-09-09 | 1997-06-17 | Nippon Steel Corporation | Non-volatile semiconductor memory device with improved rewrite speed |
JP3710880B2 (ja) | 1996-06-28 | 2005-10-26 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5844269A (en) * | 1996-07-02 | 1998-12-01 | National Semiconductor Corporation | EEPROM cell having reduced capacitance across the layer of tunnel oxide |
US5904524A (en) | 1996-08-08 | 1999-05-18 | Altera Corporation | Method of making scalable tunnel oxide window with no isolation edges |
US5953254A (en) * | 1996-09-09 | 1999-09-14 | Azalea Microelectronics Corp. | Serial flash memory |
US5861333A (en) | 1996-10-25 | 1999-01-19 | United Microelectonics Corp. | Method of tunnel window process for EEPROM cell technology |
US5895240A (en) | 1997-06-30 | 1999-04-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making stepped edge structure of an EEPROM tunneling window |
US5973356A (en) | 1997-07-08 | 1999-10-26 | Micron Technology, Inc. | Ultra high density flash memory |
US5936274A (en) | 1997-07-08 | 1999-08-10 | Micron Technology, Inc. | High density flash memory |
US6187634B1 (en) * | 1997-11-19 | 2001-02-13 | Altera Corporation | Process for making an EEPROM active area castling |
US6171907B1 (en) * | 1997-12-19 | 2001-01-09 | Nexflash Technologies, Inc. | Method for fabricating tunnel window in EEPROM cell with reduced cell pitch |
US5972752A (en) | 1997-12-29 | 1999-10-26 | United Semiconductor Corp. | Method of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profile |
EP0994512B1 (en) * | 1998-10-15 | 2004-09-22 | STMicroelectronics S.r.l. | Simplified DPCC process for manufacturing FLOTOX EEPROM non-autoaligned semiconductor memory cells |
FR2800200B1 (fr) * | 1999-10-21 | 2002-01-04 | St Microelectronics Sa | Procede de fabrication de points memoire eeprom |
-
2001
- 2001-05-01 US US09/847,810 patent/US6369422B1/en not_active Expired - Fee Related
- 2001-11-02 US US10/053,473 patent/US6486031B1/en not_active Expired - Fee Related
-
2002
- 2002-03-11 CA CA002445592A patent/CA2445592A1/en not_active Abandoned
- 2002-03-11 EP EP02715090A patent/EP1388172A1/en not_active Withdrawn
- 2002-03-11 CN CNB028091337A patent/CN1263152C/zh not_active Expired - Fee Related
- 2002-03-11 KR KR10-2003-7014298A patent/KR20040015239A/ko not_active Application Discontinuation
- 2002-03-11 JP JP2002586408A patent/JP2004527128A/ja active Pending
- 2002-03-11 WO PCT/US2002/007307 patent/WO2002089214A1/en not_active Application Discontinuation
- 2002-04-02 TW TW091106599A patent/TW548782B/zh not_active IP Right Cessation
-
2003
- 2003-10-30 NO NO20034843A patent/NO20034843L/no unknown
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100456495C (zh) * | 2005-04-29 | 2009-01-28 | 海力士半导体有限公司 | 存储器的晶体管结构及其制造方法 |
CN101752381B (zh) * | 2008-12-10 | 2013-07-24 | 上海华虹Nec电子有限公司 | Otp器件结构及其制备方法 |
CN102544111A (zh) * | 2010-12-29 | 2012-07-04 | 精工电子有限公司 | 半导体非易失性存储装置 |
CN102544111B (zh) * | 2010-12-29 | 2015-12-09 | 精工电子有限公司 | 半导体非易失性存储装置 |
CN103218468A (zh) * | 2012-01-18 | 2013-07-24 | 台湾积体电路制造股份有限公司 | 用于生成最优半导体部件布局的方法和系统 |
US9305135B2 (en) | 2012-01-18 | 2016-04-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Generating a semiconductor component layout |
CN108538832B (zh) * | 2012-01-18 | 2021-05-18 | 台湾积体电路制造股份有限公司 | 用于生成最优半导体部件布局的方法和系统 |
CN104733461A (zh) * | 2013-12-23 | 2015-06-24 | 上海华虹宏力半导体制造有限公司 | Eeprom的结构及其制造方法 |
CN104733461B (zh) * | 2013-12-23 | 2018-02-06 | 上海华虹宏力半导体制造有限公司 | Eeprom的结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW548782B (en) | 2003-08-21 |
US6486031B1 (en) | 2002-11-26 |
NO20034843D0 (no) | 2003-10-30 |
JP2004527128A (ja) | 2004-09-02 |
NO20034843L (no) | 2004-01-02 |
KR20040015239A (ko) | 2004-02-18 |
US6369422B1 (en) | 2002-04-09 |
EP1388172A1 (en) | 2004-02-11 |
WO2002089214A1 (en) | 2002-11-07 |
CN1263152C (zh) | 2006-07-05 |
US20020164856A1 (en) | 2002-11-07 |
CA2445592A1 (en) | 2002-11-07 |
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