CN1589480A - 级可变存储器 - Google Patents
级可变存储器 Download PDFInfo
- Publication number
- CN1589480A CN1589480A CNA028228804A CN02822880A CN1589480A CN 1589480 A CN1589480 A CN 1589480A CN A028228804 A CNA028228804 A CN A028228804A CN 02822880 A CN02822880 A CN 02822880A CN 1589480 A CN1589480 A CN 1589480A
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- CN
- China
- Prior art keywords
- unit
- data
- level
- storage
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims description 9
- 238000013500 data storage Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000012856 packing Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 230000005055 memory storage Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/564—Miscellaneous aspects
- G11C2211/5641—Multilevel memory having cells with different number of storage levels
Abstract
Description
Claims (20)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/955,282 US6643169B2 (en) | 2001-09-18 | 2001-09-18 | Variable level memory |
US09/955,282 | 2001-09-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1589480A true CN1589480A (zh) | 2005-03-02 |
CN100585737C CN100585737C (zh) | 2010-01-27 |
Family
ID=25496611
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02822880A Expired - Lifetime CN100585737C (zh) | 2001-09-18 | 2002-08-06 | 级可变存储器 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6643169B2 (zh) |
EP (1) | EP1428221B1 (zh) |
KR (1) | KR100580017B1 (zh) |
CN (1) | CN100585737C (zh) |
AT (1) | ATE365967T1 (zh) |
DE (1) | DE60220931T2 (zh) |
TW (1) | TWI268511B (zh) |
WO (1) | WO2003025948A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102779554A (zh) * | 2006-05-15 | 2012-11-14 | 苹果公司 | 多级数据存储单元的维护操作 |
Families Citing this family (97)
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US7554842B2 (en) * | 2001-09-17 | 2009-06-30 | Sandisk Corporation | Multi-purpose non-volatile memory card |
US7178004B2 (en) * | 2003-01-31 | 2007-02-13 | Yan Polansky | Memory array programming circuit and a method for using the circuit |
US7117326B2 (en) * | 2003-06-26 | 2006-10-03 | Intel Corporation | Tracking modifications to a memory |
US7356755B2 (en) * | 2003-10-16 | 2008-04-08 | Intel Corporation | Error correction for multi-level cell memory with overwrite capability |
US7257033B2 (en) | 2005-03-17 | 2007-08-14 | Impinj, Inc. | Inverter non-volatile memory cell and array system |
US7715236B2 (en) * | 2005-03-30 | 2010-05-11 | Virage Logic Corporation | Fault tolerant non volatile memories and methods |
US7679957B2 (en) | 2005-03-31 | 2010-03-16 | Virage Logic Corporation | Redundant non-volatile memory cell |
US7272041B2 (en) * | 2005-06-30 | 2007-09-18 | Intel Corporation | Memory array with pseudo single bit memory cell and method |
US8156403B2 (en) | 2006-05-12 | 2012-04-10 | Anobit Technologies Ltd. | Combined distortion estimation and error correction coding for memory devices |
CN103258572B (zh) | 2006-05-12 | 2016-12-07 | 苹果公司 | 存储设备中的失真估计和消除 |
US7697326B2 (en) | 2006-05-12 | 2010-04-13 | Anobit Technologies Ltd. | Reducing programming error in memory devices |
US8239735B2 (en) | 2006-05-12 | 2012-08-07 | Apple Inc. | Memory Device with adaptive capacity |
US7568135B2 (en) | 2006-05-15 | 2009-07-28 | Apple Inc. | Use of alternative value in cell detection |
US8000134B2 (en) | 2006-05-15 | 2011-08-16 | Apple Inc. | Off-die charge pump that supplies multiple flash devices |
US7613043B2 (en) | 2006-05-15 | 2009-11-03 | Apple Inc. | Shifting reference values to account for voltage sag |
WO2008026203A2 (en) * | 2006-08-27 | 2008-03-06 | Anobit Technologies | Estimation of non-linear distortion in memory devices |
CN101601094B (zh) | 2006-10-30 | 2013-03-27 | 苹果公司 | 使用多个门限读取存储单元的方法 |
US7975192B2 (en) | 2006-10-30 | 2011-07-05 | Anobit Technologies Ltd. | Reading memory cells using multiple thresholds |
US7924648B2 (en) | 2006-11-28 | 2011-04-12 | Anobit Technologies Ltd. | Memory power and performance management |
US8151163B2 (en) | 2006-12-03 | 2012-04-03 | Anobit Technologies Ltd. | Automatic defect management in memory devices |
US7900102B2 (en) | 2006-12-17 | 2011-03-01 | Anobit Technologies Ltd. | High-speed programming of memory devices |
US7593263B2 (en) | 2006-12-17 | 2009-09-22 | Anobit Technologies Ltd. | Memory device with reduced reading latency |
US7751240B2 (en) | 2007-01-24 | 2010-07-06 | Anobit Technologies Ltd. | Memory device with negative thresholds |
US8151166B2 (en) | 2007-01-24 | 2012-04-03 | Anobit Technologies Ltd. | Reduction of back pattern dependency effects in memory devices |
US7646636B2 (en) * | 2007-02-16 | 2010-01-12 | Mosaid Technologies Incorporated | Non-volatile memory with dynamic multi-mode operation |
CN101715595A (zh) | 2007-03-12 | 2010-05-26 | 爱诺彼得技术有限责任公司 | 存储器单元读取阈的自适应估计 |
US7958301B2 (en) * | 2007-04-10 | 2011-06-07 | Marvell World Trade Ltd. | Memory controller and method for memory pages with dynamically configurable bits per cell |
US8001320B2 (en) | 2007-04-22 | 2011-08-16 | Anobit Technologies Ltd. | Command interface for memory devices |
US7719896B1 (en) | 2007-04-24 | 2010-05-18 | Virage Logic Corporation | Configurable single bit/dual bits memory |
WO2008139441A2 (en) | 2007-05-12 | 2008-11-20 | Anobit Technologies Ltd. | Memory device with internal signal processing unit |
US8234545B2 (en) | 2007-05-12 | 2012-07-31 | Apple Inc. | Data storage with incremental redundancy |
US7925936B1 (en) | 2007-07-13 | 2011-04-12 | Anobit Technologies Ltd. | Memory device with non-uniform programming levels |
US7920423B1 (en) | 2007-07-31 | 2011-04-05 | Synopsys, Inc. | Non volatile memory circuit with tailored reliability |
US8259497B2 (en) | 2007-08-06 | 2012-09-04 | Apple Inc. | Programming schemes for multi-level analog memory cells |
US7802132B2 (en) * | 2007-08-17 | 2010-09-21 | Intel Corporation | Technique to improve and extend endurance and reliability of multi-level memory cells in a memory device |
US8583857B2 (en) * | 2007-08-20 | 2013-11-12 | Marvell World Trade Ltd. | Method and system for object-oriented data storage |
US20090055605A1 (en) | 2007-08-20 | 2009-02-26 | Zining Wu | Method and system for object-oriented data storage |
US8174905B2 (en) | 2007-09-19 | 2012-05-08 | Anobit Technologies Ltd. | Programming orders for reducing distortion in arrays of multi-level analog memory cells |
US7773413B2 (en) | 2007-10-08 | 2010-08-10 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells in the presence of temperature variations |
US8000141B1 (en) | 2007-10-19 | 2011-08-16 | Anobit Technologies Ltd. | Compensation for voltage drifts in analog memory cells |
US8527819B2 (en) | 2007-10-19 | 2013-09-03 | Apple Inc. | Data storage in analog memory cell arrays having erase failures |
US8068360B2 (en) | 2007-10-19 | 2011-11-29 | Anobit Technologies Ltd. | Reading analog memory cells using built-in multi-threshold commands |
US8270246B2 (en) | 2007-11-13 | 2012-09-18 | Apple Inc. | Optimized selection of memory chips in multi-chips memory devices |
US8225181B2 (en) | 2007-11-30 | 2012-07-17 | Apple Inc. | Efficient re-read operations from memory devices |
US8209588B2 (en) | 2007-12-12 | 2012-06-26 | Anobit Technologies Ltd. | Efficient interference cancellation in analog memory cell arrays |
US8456905B2 (en) | 2007-12-16 | 2013-06-04 | Apple Inc. | Efficient data storage in multi-plane memory devices |
US8085586B2 (en) | 2007-12-27 | 2011-12-27 | Anobit Technologies Ltd. | Wear level estimation in analog memory cells |
US8156398B2 (en) | 2008-02-05 | 2012-04-10 | Anobit Technologies Ltd. | Parameter estimation based on error correction code parity check equations |
US7924587B2 (en) | 2008-02-21 | 2011-04-12 | Anobit Technologies Ltd. | Programming of analog memory cells using a single programming pulse per state transition |
US7864573B2 (en) | 2008-02-24 | 2011-01-04 | Anobit Technologies Ltd. | Programming analog memory cells for reduced variance after retention |
US8230300B2 (en) | 2008-03-07 | 2012-07-24 | Apple Inc. | Efficient readout from analog memory cells using data compression |
US8400858B2 (en) | 2008-03-18 | 2013-03-19 | Apple Inc. | Memory device with reduced sense time readout |
US8059457B2 (en) | 2008-03-18 | 2011-11-15 | Anobit Technologies Ltd. | Memory device with multiple-accuracy read commands |
KR20100010355A (ko) | 2008-07-22 | 2010-02-01 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것의 프로그램 및 소거 방법 |
US8498151B1 (en) | 2008-08-05 | 2013-07-30 | Apple Inc. | Data storage in analog memory cells using modified pass voltages |
US7924613B1 (en) | 2008-08-05 | 2011-04-12 | Anobit Technologies Ltd. | Data storage in analog memory cells with protection against programming interruption |
US8169825B1 (en) | 2008-09-02 | 2012-05-01 | Anobit Technologies Ltd. | Reliable data storage in analog memory cells subjected to long retention periods |
US8949684B1 (en) | 2008-09-02 | 2015-02-03 | Apple Inc. | Segmented data storage |
US8482978B1 (en) | 2008-09-14 | 2013-07-09 | Apple Inc. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8000135B1 (en) | 2008-09-14 | 2011-08-16 | Anobit Technologies Ltd. | Estimation of memory cell read thresholds by sampling inside programming level distribution intervals |
US8239734B1 (en) | 2008-10-15 | 2012-08-07 | Apple Inc. | Efficient data storage in storage device arrays |
US8261159B1 (en) | 2008-10-30 | 2012-09-04 | Apple, Inc. | Data scrambling schemes for memory devices |
US8208304B2 (en) | 2008-11-16 | 2012-06-26 | Anobit Technologies Ltd. | Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N |
US8174857B1 (en) | 2008-12-31 | 2012-05-08 | Anobit Technologies Ltd. | Efficient readout schemes for analog memory cell devices using multiple read threshold sets |
US8248831B2 (en) | 2008-12-31 | 2012-08-21 | Apple Inc. | Rejuvenation of analog memory cells |
US8924661B1 (en) | 2009-01-18 | 2014-12-30 | Apple Inc. | Memory system including a controller and processors associated with memory devices |
US8228701B2 (en) | 2009-03-01 | 2012-07-24 | Apple Inc. | Selective activation of programming schemes in analog memory cell arrays |
US8259506B1 (en) | 2009-03-25 | 2012-09-04 | Apple Inc. | Database of memory read thresholds |
US8832354B2 (en) | 2009-03-25 | 2014-09-09 | Apple Inc. | Use of host system resources by memory controller |
US8238157B1 (en) | 2009-04-12 | 2012-08-07 | Apple Inc. | Selective re-programming of analog memory cells |
US8479080B1 (en) | 2009-07-12 | 2013-07-02 | Apple Inc. | Adaptive over-provisioning in memory systems |
US8495465B1 (en) | 2009-10-15 | 2013-07-23 | Apple Inc. | Error correction coding over multiple memory pages |
US8677054B1 (en) | 2009-12-16 | 2014-03-18 | Apple Inc. | Memory management schemes for non-volatile memory devices |
US8694814B1 (en) | 2010-01-10 | 2014-04-08 | Apple Inc. | Reuse of host hibernation storage space by memory controller |
US20110173462A1 (en) * | 2010-01-11 | 2011-07-14 | Apple Inc. | Controlling and staggering operations to limit current spikes |
US8572311B1 (en) | 2010-01-11 | 2013-10-29 | Apple Inc. | Redundant data storage in multi-die memory systems |
WO2011106054A1 (en) | 2010-02-23 | 2011-09-01 | Rambus Inc. | Multilevel dram |
US8402243B2 (en) | 2010-02-25 | 2013-03-19 | Apple Inc. | Dynamically allocating number of bits per cell for memory locations of a non-volatile memory |
US8694853B1 (en) | 2010-05-04 | 2014-04-08 | Apple Inc. | Read commands for reading interfering memory cells |
US8572423B1 (en) | 2010-06-22 | 2013-10-29 | Apple Inc. | Reducing peak current in memory systems |
US8595591B1 (en) | 2010-07-11 | 2013-11-26 | Apple Inc. | Interference-aware assignment of programming levels in analog memory cells |
US9104580B1 (en) | 2010-07-27 | 2015-08-11 | Apple Inc. | Cache memory for hybrid disk drives |
US8645794B1 (en) | 2010-07-31 | 2014-02-04 | Apple Inc. | Data storage in analog memory cells using a non-integer number of bits per cell |
US8856475B1 (en) | 2010-08-01 | 2014-10-07 | Apple Inc. | Efficient selection of memory blocks for compaction |
US8694854B1 (en) | 2010-08-17 | 2014-04-08 | Apple Inc. | Read threshold setting based on soft readout statistics |
US9021181B1 (en) | 2010-09-27 | 2015-04-28 | Apple Inc. | Memory management for unifying memory cell conditions by using maximum time intervals |
US8089807B1 (en) * | 2010-11-22 | 2012-01-03 | Ge Aviation Systems, Llc | Method and system for data storage |
US20120140556A1 (en) * | 2010-12-07 | 2012-06-07 | Macronix International Co., Ltd. | Method of operating flash memory |
KR20130060791A (ko) * | 2011-11-30 | 2013-06-10 | 삼성전자주식회사 | 마모도 제어 로직을 포함하는 메모리 시스템, 데이터 저장 장치, 메모리 카드, 그리고 솔리드 스테이트 드라이브 |
KR101949987B1 (ko) * | 2012-12-18 | 2019-02-20 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
US9575886B2 (en) | 2013-01-29 | 2017-02-21 | Marvell World Trade Ltd. | Methods and apparatus for storing data to a solid state storage device based on data classification |
US9047211B2 (en) | 2013-03-15 | 2015-06-02 | SanDisk Technologies, Inc. | Managing data reliability |
US9786386B2 (en) | 2015-02-27 | 2017-10-10 | Microsoft Technology Licensing, Llc | Dynamic approximate storage for custom applications |
US9690656B2 (en) * | 2015-02-27 | 2017-06-27 | Microsoft Technology Licensing, Llc | Data encoding on single-level and variable multi-level cell storage |
US11081168B2 (en) | 2019-05-23 | 2021-08-03 | Hefei Reliance Memory Limited | Mixed digital-analog memory devices and circuits for secure storage and computing |
US11556416B2 (en) | 2021-05-05 | 2023-01-17 | Apple Inc. | Controlling memory readout reliability and throughput by adjusting distance between read thresholds |
US11847342B2 (en) | 2021-07-28 | 2023-12-19 | Apple Inc. | Efficient transfer of hard data and confidence levels in reading a nonvolatile memory |
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JPH09102190A (ja) | 1995-08-02 | 1997-04-15 | Sanyo Electric Co Ltd | 信号記録装置、及び信号読出装置、並びに信号記録・読出装置 |
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KR100327421B1 (ko) * | 1997-12-31 | 2002-07-27 | 주식회사 하이닉스반도체 | 비휘발성 메모리 소자의 프로그램 시스템 및 그의 프로그램 방법 |
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-
2001
- 2001-09-18 US US09/955,282 patent/US6643169B2/en not_active Expired - Lifetime
-
2002
- 2002-08-06 DE DE60220931T patent/DE60220931T2/de not_active Expired - Lifetime
- 2002-08-06 EP EP02757016A patent/EP1428221B1/en not_active Expired - Lifetime
- 2002-08-06 CN CN02822880A patent/CN100585737C/zh not_active Expired - Lifetime
- 2002-08-06 WO PCT/US2002/025092 patent/WO2003025948A1/en active IP Right Grant
- 2002-08-06 KR KR1020047003885A patent/KR100580017B1/ko active IP Right Grant
- 2002-08-06 AT AT02757016T patent/ATE365967T1/de not_active IP Right Cessation
- 2002-08-28 TW TW091119529A patent/TWI268511B/zh not_active IP Right Cessation
-
2003
- 2003-09-18 US US10/666,988 patent/US6870767B2/en not_active Expired - Lifetime
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102779554A (zh) * | 2006-05-15 | 2012-11-14 | 苹果公司 | 多级数据存储单元的维护操作 |
CN102779554B (zh) * | 2006-05-15 | 2015-12-16 | 苹果公司 | 多级数据存储单元的维护操作 |
Also Published As
Publication number | Publication date |
---|---|
TWI268511B (en) | 2006-12-11 |
EP1428221A1 (en) | 2004-06-16 |
DE60220931T2 (de) | 2007-10-18 |
US20040057355A1 (en) | 2004-03-25 |
US6643169B2 (en) | 2003-11-04 |
ATE365967T1 (de) | 2007-07-15 |
DE60220931D1 (de) | 2007-08-09 |
WO2003025948A1 (en) | 2003-03-27 |
KR20040044938A (ko) | 2004-05-31 |
EP1428221B1 (en) | 2007-06-27 |
US20030053333A1 (en) | 2003-03-20 |
CN100585737C (zh) | 2010-01-27 |
KR100580017B1 (ko) | 2006-05-12 |
US6870767B2 (en) | 2005-03-22 |
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Address after: Idaho Patentee after: MICRON TECHNOLOGY, Inc. Address before: Idaho Patentee before: Micron Technology, INC. |
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CP01 | Change in the name or title of a patent holder | ||
CX01 | Expiry of patent term |
Granted publication date: 20100127 |
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CX01 | Expiry of patent term |