CN1610950A - 用于相变存储器的含碳分界表面层 - Google Patents

用于相变存储器的含碳分界表面层 Download PDF

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CN1610950A
CN1610950A CNA028200187A CN02820018A CN1610950A CN 1610950 A CN1610950 A CN 1610950A CN A028200187 A CNA028200187 A CN A028200187A CN 02820018 A CN02820018 A CN 02820018A CN 1610950 A CN1610950 A CN 1610950A
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D·徐
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • G—PHYSICS
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    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

用一个含碳分界表面层(20)可形成一个相变存储器单元(10)，该含碳分界表面层(20)加热一种相变材料(24)，在一个实施例中，通过形成该相变材料(24)与该含碳分界表面层(20)相接触，在一个给定的电流和温度的条件下，可施加到该相变材料(24)的热量可以增加。在某些实施例中，在高温该分界表面(20)的性质可通过使用例如碳化硅这样的宽带间隙(wide band gap)半导体材料得到改进。

Description

用于相变存储器的含碳分界表面层
背景
本发明一般涉及使用相变材料的存储器。
相变材料可呈现至少两个不同的状态。可称这些状态为非结晶的和结晶的状态。可有选择性地启动这些状态间的转换。该状态是可以区别的，因为该非结晶状态一般比结晶状态呈现更高的阻率。非结晶状态包括更多无序的原子结构，而结晶状态包括更多有序的原子结构，一般地可使用任何相变材料；但是，在某些实施例中，薄膜硫族化物合金材料是特别适宜的。
可以可逆地感生该相变。因此，该存储器可以从非结晶状态改变到该晶体状态和之后可以返回到该非结晶状态或者反过来也一样。实际上，每个储存器单元可想像成一个可编程的电阻器，其在较多的和较低的电阻状态之间可逆地改变。
在某些情况中，该单元具有大量的状态。即，由于每个状态可以由其电阻区分，所以确定状态的大量电阻有可能允许在一个单元中储存多个位。
人们知道多种相变合金。一般地，硫族化物合金包括周期表VI列的一个或多个元素。一个特别合适的合金组是GeSbTe合金。
一种相变材料可以在通过一种介质材料限定的通道或细孔中形成。该相变材料可以连接到该通道的两个端点之一个上的触点。
通过加热该相变材料可感生该相变。在某些相变存储器的实施例中，通过一个下层电极施加一个电流以加热该相变材料并感生该适当的相变，该下层电极具有充分的电阻率或其他的特性。在某些实施例中，该下层电极可以产生600℃量级的温度。
现存电极配置的一个问题是该较高的温度该材料电阻率较低。这样，如果该下层电极加热以感生该相变，它有可能变成较低电阻性的，由此将降低产生的热量。
这样，存在需要一种可控的方法提供接近相变材料的足够的电阻，甚至在温度提高的情况下。
附图的简要说明
图1是按本发明一实施例的高度放大的截面图；
图2是按本发明一实施例的图1中所示的该器件的制造的早期阶段的高度放大的截面图；
图3是在按本发明的一实施例的一后续制造阶段的图2中所示的该实施例的高度放大的截面图；
图4是在按本发明一实施例的一后续制造阶段的图3中所示的该实施例的高度放大的截面图；
图5是在按本发明一实施例的一后续制造阶段的图4的实施例的高度放大的截面图；
图6是按本发明一实施例的一后续制造阶段的高度放大的截面图；
图7还是按本发明一实施例的一后续制造阶段的高度放大的截面图；以及
图8是按本发明一实施例的一个系统的示意图。
详细说明
参照图1，一个存储器单元10可包括一个相变材料层24。该相变材料层24可以夹在上层电极26和下层电极14之间。在一个实施例中，该下电极14可以是硅化钴(Cobalt Silicide)。但是该下层电极14可以是任何导电材料。同样地，该上层电极26可以是任何导电材料。
该下层电极14可以限定在一个半导体基片12上。在该下层电极14之上，在包括该相变材料层24的区域之外可以是一种绝缘材料16，例如，作为两个例子的二氧化硅或氮化硅。在该基片12中埋置的字线(未示)可以通过该下层电极14将信号和电流施加到相变材料24。
含碳分界表面层20可以放置在该相变材料层24和该绝缘层16之间。在一个实施例中，一个圆柱形侧壁隔离层22可以限定在一个管状细孔中，该管状细孔由含碳分界表面层20和相变材料层24包裹。
在本发明的一个实施例中，该含碳分界表面层20可以由碳化硅形成的。碳化硅，按其单一的结晶形式，是具有硅和碳原子的交错的六边形平面的一种宽带间隙半导体(wide band gap semiconductor)。碳化硅工作时可加热到600℃和可以具有不明显地随温度增加而下降的电阻率。因此，碳化硅对加热该相变材料层24是非常有效的。再者，希望加热该相变材料层24，以感生该相变材料层24在非结晶态和结晶态之间变化。
随着温度增加，分界表面层20和其他可利用的材料如硅化钴那样不相同的程度增加其导电率。在降低温度时电阻率的降低使普通材料不如加热用作该相变材料层24的电极那样理想。在相当高的温度，例如600℃，其他材料的电阻率下降，而作为一个加热器感生相变的该分界表面层20的有效性并不减弱。
特别地，在较高的温度情况下碳化硅是比较不易于损失其电阻率的，因为它是一种宽带间隙材料。另外一些宽带间隙材料包括氮化镓(galium-nitride)和氮化铝。在本发明实施例中可以用作该分界表面层20的其他含碳材料可以包括溅射的碳和金刚石。
例如，该分界表面层20在碳化硅情况下可以通过化学蒸发淀积而淀积和在金刚石或碳的情况下通过溅射淀积。也可使用其他的层形成技术。
在某些实施例中，希望搀杂该分界表面层20以增加其导电率。在某些实施例中，例如，不搀杂的碳化硅可具有特别高的电阻率，由此导致过高的温度和在电极14和26两端过高的电压降。这样，可使用例如离子注入以便搀杂具有P-型或N-型杂质的该层20，从而改进退火之后的电导率。
在本发明的某些实施例中，可以提供改善该相变材料层24和该含碳分界表面层20之间的附着力的一层(未示)。作为几个例子，合适的附着力促进层可包括任何导电材料，它们包括钛，氮化钛和钨。
参照图2，在一个实施例中可用下层电极14复盖半导体基片12。然后该电极14由绝缘体复盖，和通过该绝缘体16形成合适的细孔18。
作为结果的结构，例如可以是使用化学蒸发淀积方法而淀积的表层，如图3所示的具有含碳分界表面层20。之后，在某些实施例中，如图4中所示的，该含碳分界表面层20可经受离子注入，以便在退火后增加其电导率和降低其电阻率。
如图5所示，可以在层20上淀积一种隔离层材料22。在一个实施例中，该隔离层材料可以是一种化学蒸发淀积的氧化物。之后该氧化物材料22可经受一种各向异性的蚀刻，以便在细孔18中形成在图6中所示的圆柱形的侧壁隔离层22。
转到图7，在一个实施例中，该相变材料层24可以进入到该细孔18中形成，和特别地可进入到由该侧壁隔离层22限定的区域从而与层20相接触。可在该相变材料24上淀积一个上层电极26。从而可以图案装饰电极26和相变材料24并进行蚀刻以形成图1中所示的结构。
通过使用含碳分界表面层20，可以在本质上增加该相变材料加热器的电阻率，同时改进了在高温该加热器的发热性能。该加热器有效地包括该下层电极14和该含碳分界表面层20的串联组合。但是由具有较高电阻的元件支配一个串联电阻性的组合，在某些实施例中该较高电阻的元件可以是含碳分界表面层20。作为结果，可以由该分界表面层20的电阻支配层20和14的该串联组合的电阻。
参照图8，可重复表示在图1中的该存储器单元，以形成包括大量单元的一个存储器阵列。该存储器可使用作为例如图8中所示的系统40的基于处理器的系统的多种多样的存储器。例如，该存储器可使用作为该系统的存储器或在多种多样个人计算机产品中的其他的存储器，例如膝上型产品或桌式产品或服务器。类似地，该存储器可使用在各种各样的基于处理器的设备中，同样，它也可使用作为基于处理器的电话中的存储器，例如蜂窝电话。
一般地，由于较低成本和/或较好性能在大量实施例中使用该相变存储器可以是有利的。参照图8，按照在此描述的原理形成的存储器48可以起到一个系统存储器的作用。例如，该存储器48可连接到一个接口44，按序该接口44连接在一个处理器42，一个显示器46和一条总线50之间。在该实施例中该总线50连接到接口52，该接口52按序连接到另一总线54。
总线54可连接到一个基本输入/输出系统(BIOS)存储器62和一系列的输入/输出(I/O)设备56。该没备56例如可连接到鼠标58和键盘60。当然，图8中所示的体系结构只是可包括使用该相变材料的存储器48的可能的体系结构的一个例子。
虽然已针对有限实施例描述了本发明，但本专业技术人员将理解由此可进行许多修改和变化。这意指附加的权利要求复盖下落在本发明的真实精神和范围内的所有这样的修改和变化。

Claims (30)

1.一种方法包括：
在一个半导体上形成含碳分界表面层；以及
在所说含碳分界表面层上形成相变材料。
2.权利要求1的方法，其中，在一半导体上形成含碳分界表面层包括在半导体上形成的一导电层上形成所说分界表面层。
3.权利要求1的方法，其中形成含碳分界表面层包括形成包括宽带间隙半导体材料的层。
4.权利要求3的方法，其中形成含碳分界表面层包括形成碳化硅层。
5.权利要求4的方法进一步包括搀杂所说碳化硅层。
6.权利要求5的方法进一步包括使用离子注入搀杂所说碳化硅层。
7.权利要求1的方法包括通过绝缘体形成一个细孔，在所说半导体上和在所说细孔中淀积所说含碳分界表面层。
8.权利要求7的方法包括在所说细孔中的该含碳分界表面层上淀积该相变材料。
9.权利要求8的方法包括在所说分界表面层和所说相变材料之间形成一个侧壁隔离层。
10.权利要求1的方法，其中形成相变材料包括在所说分界表面层上淀积硫族化物。
11.一种存储器包括：
一个表面；
在所说表面上的含碳分界表面层；以及
在所说含碳分界表面层上的相变材料。
12.权利要求11的存储器，其中所述表面包括在一半导体基片上的导电层。
13.权利要求11的存储器，其中所述含碳分界表面层包括一种宽带间隙半导体材料。
14.权利要求13的存储器，其中所述含碳分界表面层包括碳化硅。
15.权利要求14的存储器，其中所说碳化硅层是用导电型确定杂质搀杂的。
16.权利要求15的存储器包括放置在所说表面上的绝缘体，通过所说绝缘体形成细孔，所说含碳分界材料形成在所说表面上的所说细孔中。
17.权利要求16的存储器，其中所说相变材料形成在所说含碳分界表面层上和所说细孔中。
18.权利要求17的存储器包括一个侧壁隔离层于所说细孔中。
19.权利要求18的存储器，其中所说侧壁隔离层放置在所说分界表面层和所说绝缘层之间。
20.权利要求11的存储器，其中所说相变材料包括硫族化物材料。
21.一个电子器件包括：
一个表面，
在所说表面上的含碳分界表面层；以及
在所说含碳分界表面上层的相变材料。
22.权利要求21的器件，其中所说电子器件是一个储存器件。
23.权利要求22的器件，其中所说存储器件是一个计算机的一部分。
24.权利要求23的器件包括一个处理器，一个接口和连接到所说储存器的一条总线。
25.一个存储器包括：
一个半导体基片；
一个放置在所说基片上的碳化硅层；以及
在所说碳化硅层上的相变材料。
26.权利要求25的存储器包括在所说半导体基片和所说碳化硅层之间的导电层。
27.权利要求26的存储器包括在所说导电层上的绝缘体，所说绝缘体具有限定在其中的一个细孔，和所说相变材料和所说碳化硅层形成在所说细孔中。
28.权利要求25的存储器，其中所说碳化硅是搀杂的。
29.权利要求28的存储器，其中所说相变材料包括硫族化物。
30.权利要求29的存储器包括在所说相变材料和所说碳化硅层之间的一个侧壁隔离层。
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CN100382330C (zh) * 2005-08-11 2008-04-16 上海交通大学 可实现多位存储的单元结构
US7723716B2 (en) 2005-12-29 2010-05-25 Dongbu Electronics Co., Ltd. Phase change memory device
CN101395717B (zh) * 2006-03-09 2010-07-21 松下电器产业株式会社 电阻变化型元件、半导体装置、和其制造方法
CN101213612B (zh) * 2005-05-19 2010-09-29 Nxp股份有限公司 相变存储单元和形成相变存储单元的方法
CN101981720A (zh) * 2008-04-01 2011-02-23 Nxp股份有限公司 垂直相变存储单元
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