CN1682384B - 包括锥形侧壁的涂有磷光体的发光二极管及其制造方法 - Google Patents

包括锥形侧壁的涂有磷光体的发光二极管及其制造方法 Download PDF

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CN1682384B
CN1682384B CN038221764A CN03822176A CN1682384B CN 1682384 B CN1682384 B CN 1682384B CN 038221764 A CN038221764 A CN 038221764A CN 03822176 A CN03822176 A CN 03822176A CN 1682384 B CN1682384 B CN 1682384B
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sidewall
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phosphor
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CN1682384A (zh
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D·B·小斯拉特
G·H·内利
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Kerui Led Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Abstract

发光二极管包括具有第一和第二相对表面(200a,200b)以及以一个倾斜角从第二表面向第一表面延伸的介于第一和第二相对表面之间的侧壁(200d)的衬底。在倾斜的侧壁上提供共形的磷光体层(220)。倾斜的侧壁能够允许比常规垂直侧面更均匀的磷光体涂层。

Description

包括锥形侧壁的涂有磷光体的发光二极管及其制造方法
临时申请的交叉参考
本申请要求2002年9月19日申请的、标题为“Phosphor-CoatedLight Emitting Diodes Including Tapered Sidewalls,andFabrication Methods Therefor”、转让给本申请的受让人的临时申请第60/411,980号的权利,其整个内容以引用的方式并入本文,以便充分地阐明。
技术领域
本发明涉及微电子器件及其制造方法,具体涉及发光二极管(LED)及其制造方法。
背景技术
发光二极管广泛地应用于用消费和商业应用中。正如本领域的技术人员所熟知的,发光二极管通常包括微电子衬底上的二极管区。微电子衬底包括,例如,硅,砷化镓,磷化镓,其合金,碳化硅和/或蓝宝石。LED的继续开发产生覆盖及超出可见光谱的高效率和机械强的光源。加上固态器件的潜在长寿命的这些品质允许各种新的显示应用,并可以将LED放置在与良好确立的白炽灯和荧光灯相竞争的位置。
LED效率的一种测定是每流明的成本。LED的每流明的成本是每个LED芯片的制造成本、LED材料的内量子效率和耦合或萃取器件产生的光输出能力的函数。光萃取问题的综述可以在1997年学术出版社出版的、Stringfellow等人编写的、标题为“High Brightness Light EmittingDiodes”中找到,具体在第2章、47-63页Craford撰写的、标题为“Overview of Device Issues in High-Brightness Light EmittingDiodes”。
已经用多种方法实现光萃取,其取决于,例如,用于制造二极管区和衬底的材料。例如,在砷化镓和磷化镓材料体系中,厚的p型顶侧窗口层用于光萃取。因为在使用液相和/或汽相外延的砷化镓/磷化镓材料体系能够实现高速外延生长率,所以生长p型窗口层。另外,由于p型顶侧窗口层的导电率,所以可以实现电流延伸。如果衬底为吸光衬底,也可以使用具有高蚀刻率和高蚀刻选择性的化学蚀刻以允许除去至少部分的衬底。也可以在吸光衬底和二极管区之间生长分布的布拉格反射器以分离发光和吸光区域。
光萃取的其它方法包括机械成形或对二极管区和/或衬底纹理。然而,希望提供允许进一步提高光的萃取率的其它光萃取技术。另外,希望增加LED芯片的面积,从约0.1mm2增大到更大区域,由此提供更大的LED。不幸地,由于芯片尺寸根据更高的功率/密度和/或其它应用按比例增加,所以不能保持这些成形技术的效率。
因为这些LED发射可见光谱中的蓝光/绿光部分,所以最近更多的开发兴趣和商业活动集中在在碳化硅中和/或上制造LED。参见,例如,Edmond等人申请的、标题为“Blue Light-Emitting Diode With HighExternal Quantum Efficiency”、转让给本申请的受让人的美国专利5,416,342,其整个内容以引用的方式并入本文,以便充分地阐明。因为包括碳化硅衬底上的氮化镓基二极管区的LED也可以高效地发光,所以在包括碳化硅衬底上的氮化镓基二极管区的LED方面也产生浓厚的兴趣。参见,例如,Linthicum等人申请的、标题为“PendeoepitaxialGallium Nitride Semiconductor Layers On Silicon CarbideSubstrates”的美国专利6,177,688,其整个内容以引用的方式并入本文,以便充分的阐明。
在上述的碳化硅LED和/或碳化硅上的氮化镓LED中,难以使用传统的光萃取方法。例如,因为氮化镓的相对低生长率,所以难以使用厚的p型窗口层。同样,尽管上述LED得益于布拉格反射器和/或衬底除去方法的使用,但是难于在衬底和氮化镓二极管区之间制造反射器和/或除去至少部分的碳化硅衬底。
Edmond申请的、标题为“Method of Production of Light EmittingDiodes”、转让给本申请的受让人、其整个内容以引用的方式并入本文的美国专利4,966,862描述了在半导体材料的单一衬底上制备多个发光二极管的方法。该方法用于衬底包括同样的半导体材料的外延层的结构,外延层依次包括定义其间p-n结的p型和n型材料层。按预定的图案蚀刻外延层和衬底以限定各个二极管前体,并将其蚀刻的足够深以在每个二极管前体中描绘p-n结的外延层中形成台面。接着从外延层的侧面和在台面之间将衬底开槽至预定深度,以限定衬底中二极管前体的侧部,同时保留在沟槽下面足够的衬底以保持其机械稳定性。将欧姆接触加到外延层和衬底,一层绝缘材料形成在二极管前体上。绝缘层覆盖没有被欧姆接触覆盖的那部分外延层、邻近台面的衬底的一个表面的任何部分、和衬底的侧部。结果,每个二极管的结和衬底的侧部除了通过欧姆接触外都与电接触绝缘。当分离二极管时,能够用导电环氧树脂将它们安装在结侧下,而不涉及环氧树脂将短路最终的二极管。参见美国专利4,966,862的摘要。
Carter.Jr.申请的、标题为“High Efficiency Light EmittingDiodes From Bipolar Gallium Nitride”、转让给本申请的受让人、其整个内容以引用的方式并入本文的美国专利5,210,051描述了一种生长本征、基本未掺杂的具有7×1017cm3的施主浓度或更低的单晶氮化镓。该方法包括将氮源引入包含生长表面的反应室,同时将镓源引入同一反应室,同时将氮原子和镓原子引到将生长氮化镓的生长表面。该方法还包括在足够高的温度下同时保持生长表面以提供充足的冲击生长表面以达到并移进适当的晶格位置的镓和氮原子的表面迁移率,由此建立优良的结晶度,以确保高效的附着系数,并由此在生长表面上生长氮化镓的外延层,但反应室中氮元素的分压力足够低以接近在室的其它环境条件下氮化镓之上的氮元素的平衡气压,由此使来自最终的外延层中的氮化镓和空氮(nitrogen vacancy)的氮损失最小。参见美国专利5,210,051的摘要。
在LED上的磷光体涂层进一步使光萃取问题复杂化。特别地,希望给LED提供磷光体,例如提供固态照明。在一个实施例中,用于固态白光的LED产生短波长例如在约380nm到约480nm的范围内的高辐射通量输出。提供一种或多种磷光体,其中LED的短波长、高能量光子输出部分地或全部地用于激发磷光体,由此降频变换一些或全部的LED输出,以生成白光。
作为一个具体实例,约390nm的LED的紫外输出结合使用红色、绿色和蓝色磷光体,以生成白光。作为另一具体实例,来自LED的约470nm的蓝光输出用来激发黄色磷光体,以通过发射一些470nm的蓝光输出和当部分的LED输出被磷光体吸收时发生的一些次要黄光发射来生成白光。
如本领域的技术人员所周知的,至少两种技术可以用于将磷光体材料并入LED的发光路径中。在一种技术中,磷光体悬浮在提供有LED的封装体和/或密封体中,以便磷光体被维持在靠近LED。
在一个替换的技术中,将磷光体材料涂覆在LED自身上。当涂覆磷光体时,可以使用液态粘合剂,例如环氧树脂,其中悬浮一种或多种磷光体。在分配并固化清洁密封的环氧树脂之前,将含有磷光体的粘合剂分配到LED上。例如,在美国专利6,252,254;6,069,440;5,858,278;5,813,753;和5,277,840中描述了使用磷光体涂层的LED。
鉴于以上叙述,对用碳化硅上的氮化镓制造的,特别是用碳化硅制造的、和/或包括磷光体涂层的LED来说,期望提高光萃取的技术。
发明内容
根据本发明的一些实施例的发光二极管包括具有第一和第二相对表面的衬底、和在第一表面上的二极管区。发光二极管的侧壁以不为90°的倾斜角度从第二表面向第一表面延伸。在一些实施例中,倾斜角为钝角。在一些实施例中,倾斜侧壁可以从第二表面延伸到邻近的二极管区。共形的含有磷光体层包含在倾斜侧壁的至少一部分上。在其它实施例中,含有磷光体层也包含在第二表面上。根据本发明的一些实施例,通过提供邻近第二表面的倾斜侧壁,和具有邻近第二表面的垂直(正交)侧壁的发光二极管相比,可以获得更均匀的含有磷光体涂层。
根据本发明的一些实施例,通过用含磷光体层共形地涂覆从衬底的第二表面向衬底的第一表面以倾斜角延伸的侧壁来制造发光二极管。也可以共形地涂覆第二表面。
附图说明
图1A是包含邻近第二表面的垂直侧壁的发光二极管的截面图。
图1B是包含邻近涂覆有含磷光体层的第二表面的垂直侧壁的发光二极管的截面图。
图2A是根据本发明的一些实施例包含邻近第二表面的倾斜侧壁的LED的截面图。
图2B是根据本发明的一些实施例包含邻近涂覆有均匀厚度的含磷光体层的第二表面的倾斜侧壁的LED的截面图。
图2C是根据本发明的一些实施例包含邻近包含多层接触结构,并涂覆有均匀厚度的含磷光体涂层的第二表面的倾斜侧壁的LED的截面图。
具体实施方式
下文将参照附图更充分地描述本发明,其中示出本发明的实施例。然而,本发明不局限于这里提出的实施例。相反,提供这些实施例以便全面、完整地公开,并将本发明的范围转达给本地领域的技术人员。在附图中,为了清楚,夸大了层和区域的厚度。全文中相同的标号代表相同的元件。可以理解,当将元件例如层、区域或衬底称作在另一元件上或延伸到另一元件之上时,是直接在另一元件上或直接延伸到另一元件上或者也存在插入元件。相反,当将元件称作直接在另一元件上或直接延伸在另一元件之上时,就没有插入元件存在。
现在主要参照碳化硅衬底上的氮化镓基发光二极管来描述本发明的实施例。然而,本领域的技术人员应当理解,本发明的一些实施例可以结合不吸收所发射的光或对所发射的光是透明的衬底一起使用。在一些实施例中,衬底的折射率比二极管的折射率大。因此,结合包括GaP衬底上的AlGaInP二极管、GaAs衬底上的InGaAs二极管、GaAs衬底上的AlGaAs二极管、SiC衬底上的SiC二极管、蓝宝石(Al2O3)上的SiC二极管、和/或氮化镓、碳化硅、氮化铝、氧化锌和/或其它衬底上的氮基二极管。
Slater,Jr.等人在2002年1月25日申请的、标题为“LightEmitting Diodes Including Substrate Modifications for LightExtraction and Manufacturing Methods Therefor”、转让给本申请的受让人、其整个内容以引用的形式并入本文的申请序列号10/057,821中描述上述LED的一些实施例。
图1A是具有邻近第二表面的垂直侧壁的LED的截面图。具体参照图1A,这些LED包括具有第一和第二相对表面100a和100b的衬底100,例如碳化硅衬底100,该衬底对预定波长范围内的光辐射是透明的。如这里所使用的,术语“透明”意味着预定波长范围内的光辐射能穿过该材料,而没有被全部地吸收或全部地反射。二极管区110在第一表面上,并根据加在二极管区110上的电压将该二极管区110配置成将预定波长的光射进衬底100。二极管区110包括碳化硅、氮化镓和/或其它材料,例如在上述申请序列号10/057,821中说明的。
还参照图1A,衬底100包括一个或多个包括邻近第二表面100b并在垂直于该第二表面的第一部分100c的侧壁,如图1A中所示的90°角。邻近第一表面100a的第二部分100e垂直于该第一表面。介于第一和第二部分100c和100e之间的第三部分100d是倾斜的,例如,与第二部分100e的延伸成30°。尽管图1A未按比例示出,但图1A中展示了一个实施例的尺寸。因而,在图1A所示的实施例中,第一表面可以是大约300μm宽,第二表面可以是大约200μm宽。侧壁的第一部分100c可以是约135μm厚,侧壁的第二部分100e可以是约25μm厚,侧壁的倾斜部分100d可以是约90μm厚,使得倾斜部分100d的表面是大约105μm长。LED的总厚度是大约250μm。
现在参照图1B,示出了包括含磷光体涂层的图1A的LED。如图1B中所示,难以将侧壁的第二表面100b或第一(垂直)部分100c涂覆得与侧壁的第三(倾斜)部分100d一样厚。更具体的说,为了在侧壁的第一(垂直)部分100c上获得充分的覆盖,可以使用过量的含磷光体粘合剂,这还在第二表面100b上提供少量的覆盖,并还可以引起过量的含磷光体的粘合剂向下流到侧壁的第三(倾斜)部分100d上。第二表面100b上的少量覆盖的含磷光体涂层120允许大量的蓝光从LED直接辐射,而不穿过任何或者足够的吸收黄色磷光体。另外,向下流到侧壁的第三(倾斜)部分100d上的过量磷光体导致很少的蓝光从LED的下部发射。次要的黄光发射可以产生在侧壁的第三(倾斜)部分100d上的含磷光体粘合剂的过厚层之下,其仍被含磷光体粘合剂的上部吸收,这导致涂覆磷光体的LED的转换效率降低和/或导致彩色相关温度(CCT)的大角度相关性。
图2A-2C中描述的本发明的一些实施例允许至少一些LED的发光表面被覆盖有基本均匀厚度的几乎共形的含磷光体层。该更加共形的覆盖产生期望的光谱,同时也允许更多的辐射通量从涂有磷光体的LED射出。
图2A是根据本发明的一些实施例的LED的截面图。如图2A中所示,这些LED包括具有第一和第二相对表面200a和200b并且对预定波长范围内的光辐射是透明的半导体衬底,例如碳化硅衬底。二极管区210在第一表面200a上,并根据加在二极管区210上的电压将该二极管区210配置成将预定波长范围内的光射进衬底200。二极管区210可以包括碳化硅、氮化镓和/或其它材料,例如在上述申请序列号10/057,821中说明的。
也如图2A中所示,LED的至少一个侧壁包括邻近第二表面的第一倾斜部分200d。倾斜部分200d与第二表面200b形成非垂直角,例如像120°度的钝角。在一些实施例中,倾斜部分200d从第二表面200b延伸到第一表面200a的附近或一直延伸到第一表面200a。在其它的实施例中,第二垂直部分200e可以存在于邻近第一表面200a。在一些实施例中,倾斜部分200d是平面的倾斜部分,以提供从第二表面200b向第一表面200a延伸的连续的锥形,在一些实施例中,从第二表面200b一直延伸到第一表面200a的连续的锥形。在其它实施例中,倾斜部分200d可以为弯曲的(非平面),包括多个平面段、和/或被纹理。
尽管图2A没有按比例示出,但显示了本发明的一个实施例的尺寸。具体的,第一表面200a可以是约300μm宽,而第二表面200b可以是约125μm宽。侧壁的第一倾斜部分200d可以是约150μm厚,以提供约173μm的表面长度。第二垂直部分200e可以是约25μm厚。因此,LED的总厚度可以是约175μm。
具有邻近第二表面的倾斜侧壁的LED的制造方法对本领域的技术人员来说是众所周知的,例如在美国专利5,087,949中描述,其整个内容以引用的方式并入本文,以便充分地阐明。
比较图示尺寸的图2A和1A的实施例,图2A的LED具有较低(平坦)的轮廓和从第二表面200b几乎到第一表面200a的连续锥形的倾斜侧壁部分200d。不同地是,没有具有第一垂直部分100c的柱子。使用比图1A的实施例中使用的更薄的碳化硅衬底来制造图2A的实施例。具体地,如图1A中所示的衬底100可以是约250μm厚,而如图2A中所示的本发明的一些实施例中的衬底200可以是约175μm厚。然而可以理解,在其它的实施例中,衬底不需要更薄,可以相应地调整锥形角度和/或其它参数。
另外,用于对在300μm间距上制造的具有图1A的LED的锯开/切割工艺的锯条可以是约100μm宽。由图1A(第三部分100d)中和如图2A中所示的本发明的实施例(第一倾斜部分200d)中的锯条所生成的锥形平面与相对于第一表面100a,200a的法线可以为约30°。然而,如在图2A中所示的本发明的一些实施例中的锯条的宽度可以是约175μm宽。较宽锯条和较薄衬底200能够制造在形成引线键合的第二表面200b处开始并延伸到第一表面200a的侧壁的连续锥形的第一倾斜部分200d,在约20μm到约30μm之内,图2A中所示的在约25μm之内。在图1A和2A中,当断开这些部分100e/200e以分割成单个芯片时,邻近第一表面100a,200a的底部20μm到30μm是相对垂直的。
继续比较图2A和图1A,在一些实施例中,图2A的第一表面200b为125μm2,而图1A的第一表面100b约200μm2,在介于约130与140μm(如图1A中的135μm所示)高之间的垂直柱子顶端。在图2A中,第一倾斜部分200d具有约173μm的总长度,而中间锥形部分100d具有约105μm的总长度。看高度尺寸,第一倾斜部分200d约为图2A中175μm总高度的150μm,而在图1A中,第三部分100d约为250μm总高度的90μm。
现在参照图2B,含磷光体层220涂覆在倾斜侧壁200d上,并且也可以涂覆在第二表面200d上。在一些实施例中,含磷光体层包括粘合剂,例如环氧树脂、硅基基体和/或其它溶剂。磷光体可以为掺铈的YAG和/或其它常规磷光体。然而,根据应用可以使用其它常规粘合剂和/或磷光体。通过丝网印刷、蒸发(溅射、电子束、热的、CVD、静电和/或亲电子沉积)、浸渍、旋涂和/或其它技术在LED上涂覆磷光体。然后,在约50℃与200℃之间固化含磷光体层220约几秒钟到几小时。在本发明的一些实施例中,含磷光体层220的厚度可以在约2μm与约100μm之间的范围。然而,可以使用其它的厚度。可以选择所使用的厚度以减少或最小化自吸收和/或散射并且可以由涂覆工艺、磷光体的密度和/或希望的应用所决定。另外,可以选择一个涂覆工艺或多个涂覆工艺的组合以相对于第二表面200b控制在倾斜侧壁200d上的磷光体的厚度。
如图2B中所示,侧壁的倾斜部分200d能够提高含磷光体层220的均匀性。相对于图1B的LED,这能够提高光转换。
在一些实施例中,图2B的实施例相对于图1B的实施例的增强的光输出可以是介于约10%与约15%之间。除了增加的功率或辐射通量之外,如图2B中所示的本发明实施例除了通过其分割芯片的第二部分200e外可以没有基本垂直的侧壁。连同减少的高度,这允许在整个第一倾斜部分200d和/或第一倾斜部分200d和第二表面200b之上获得均匀的磷光体覆盖。因此,相对于图1B的实施例,在本发明的一些实施例中,提高的蓝光和黄光透射转换效率能够提供白光源的改善的现色性。另外,通过减小衬底的厚度,可以获得改善的(降低的)LED的静态电阻,这导致改善的即插即用效率(in-the-wall plug efficiency)。最后,可以理解,可以调节倾斜部分200d的参数例如长度、角度和/或外形以利用给定磷光体和/或涂覆工艺提供希望的光输出。
图2C展示了本发明的其它实施例,包括在衬底200的第二表面200b上的反射衬底接触230。在一些实施例中,如图2C中所示,衬底接触230能够完全地覆盖第二表面200b。这能降低或消除从LED直接透射光而不穿透任何含磷光体层220的可能性。为了完成第二表面200b的覆盖,覆盖整个第二表面200b的接触230也可以减小过分配粘合剂的趋势。在本发明的其它实施例中,可以理解,衬底接触230不需要覆盖整个第二表面200b。在本发明的一些实施例中,如图2C中所示,含磷光体层220不需要存在于衬底接触230上,或相对于第一倾斜部分200d,可以以减少的厚度存在。使用常规技术可以从接触230中移除至少一些含磷光体层220。也应当理解,本发明的一些实施例可以用在悬浮的磷光体封装中以提高从LED进入悬浮磷光体的光萃取,通过例如阻挡从第二表面200b发射并仅允许从倾斜部分200d发射。
也应当理解,相对于仅覆盖第二表面200b的一部分的衬底接触,在整个第二表面200b上的衬底接触230的覆盖可以减少光输出。再次参照图2C,在一些实施例中,可以提供多层接触230,包括反射层,能够至少部分地补偿上述损失。例如,根据本发明实施例的一些衬底接触可以包括含有例如约
Figure G038221764D00091
的镍的欧姆层232、含有例如约
Figure G038221764D00092
的银和/或铝的反射层234、含有例如约
Figure G038221764D00093
的铂和/或TiN的阻挡层236、以及含有约
Figure G038221764D00094
的金的粘合层238。这可以与其它的包括钛、铂和金层的接触/接合焊盘对比。根据本发明的一些实施例,已经发现从常规接触输出的光的损失源自在与第二表面200b的接触面处的钛层的低反射率。明显相反,根据本发明的一些实施例,为了减少损失,可以将在第二表面200b与反射层234之间包括镍的欧姆层做的很薄,例如在约厚之间。可以使用的其它接触结构在前述的申请序列号10/057,821中描述。
在附图和说明书中,已经公开了本发明的实施例,尽管使用了具体项,但它们仅用于通常的和描述性的意义,不是为了限制的目的,下面的权利要求中阐述了本发明的范围。

Claims (23)

1.一种发光二极管,包括:
具有第一和第二相对表面以及在其间的侧壁的衬底,该侧壁从第二表面向第一表面以倾斜角延伸;
在第二表面上以及在从第二表面向第一表面以倾斜角延伸的侧壁上包括均匀厚度的磷光体的共形层。
2.根据权利要求1的发光二极管,其中倾斜角为钝角。
3.根据权利要求2的发光二极管,其中钝角是120°。
4.根据权利要求1的发光二极管,其中侧壁以倾斜角从第二表面朝向第一表面延伸,该侧壁与该第一表面相邻但不与其接触。
5.根据权利要求1的发光二极管,其中侧壁以倾斜角从第二表面延伸到第一表面。
6.根据权利要求1的发光二极管,其中侧壁为平面侧壁。
7.根据权利要求1的发光二极管,其中衬底为半导体衬底。
8.根据权利要求1的发光二极管,还包括在第一表面上的二极管区。
9.根据权利要求8的发光二极管,其中衬底包括碳化硅,和其中二极管区包括氮化镓。
10.根据权利要求1的发光二极管,其中侧壁垂直于第一表面从第一表面向第二表面延伸。
11.根据权利要求8的发光二极管,其中衬底和二极管区的总厚度是175μm。
12.根据权利要求11的发光二极管,其中侧壁以120°的倾斜角从第二表面到第一表面的附近延伸173μm。
13.根据权利要求1的发光二极管,其中含有磷光体的共形层的厚度介于2μm与100μm之间。
14.根据权利要求1的发光二极管,其中含有磷光体的共形层沿以倾斜角从第二表面向第一表面延伸的整个侧壁延伸。
15.根据权利要求1的发光二极管,还包括在第二表面上的反射接触。
16.根据权利要求15的发光二极管,其中反射接触在整个第二表面上延伸。
17.根据权利要求15的发光二极管,其中含有磷光体的共形层在与第二表面相对的反射接触上延伸。
18.根据权利要求17的发光二极管,其中在反射接触上的含磷光体的共形层比在倾斜侧壁上的薄。
19.一种发光二极管,包括:
具有第一和第二相对表面以及在其间的平面侧壁的衬底,该平面侧壁包括以钝角从第二表面延伸到第一表面的邻近处但不与其接触的第一部分和垂直于第一表面从第一表面向第二表面延伸的第二部分;
在第一表面上的二极管区;
在第二表面上以及在以倾斜角从第二表面向第一表面延伸的侧壁的第一部分上包括均匀厚度的磷光体的共形层;以及
在第二表面上的衬底接触,其中该衬底接触包括反射层和含有镍的欧姆层。
20.根据权利要求19的发光二极管,其中衬底包括碳化硅,和其中二极管区包括氮化镓。
21.根据权利要求19的发光二极管,其中衬底和二极管区的总厚度是175μm,其中侧壁的第一部分以120°的钝角从第二表面到第一表面的附近延伸173μm,并且其中含有磷光体的共形层的厚度介于2μm与100μm之间。
22.根据权利要求19的发光二极管,其中含有磷光体的共形层在侧壁的整个第一部分上延伸。
23.一种制造发光二极管的方法,包括:
用均匀厚度的含磷光体层共形地涂覆侧壁,该侧壁以倾斜角从衬底的第二表面向衬底的第一表面延伸,和
用均匀厚度的含磷光体层共形地涂覆所述第二表面。
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US6853010B2 (en) 2005-02-08
CN1682384A (zh) 2005-10-12
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HK1075326A1 (en) 2005-12-09
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JP2006500767A (ja) 2006-01-05
MY134719A (en) 2007-12-31
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AU2003276867A1 (en) 2004-04-08
US20040056260A1 (en) 2004-03-25
CA2495149A1 (en) 2004-04-01
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