CN1754008A - 用于大面积等离子增强化学气相淀积的气体分配板组件 - Google Patents

用于大面积等离子增强化学气相淀积的气体分配板组件 Download PDF

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CN1754008A
CN1754008A CNA2004800052710A CN200480005271A CN1754008A CN 1754008 A CN1754008 A CN 1754008A CN A2004800052710 A CNA2004800052710 A CN A2004800052710A CN 200480005271 A CN200480005271 A CN 200480005271A CN 1754008 A CN1754008 A CN 1754008A
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崔寿永
上泉元
罗伯特·I·格林
侯力
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    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges

Abstract

本发明提供一种用于在工艺腔中分配气体的气体分配板组件的装置。在一具体实施例中，一气体分配板组件包括一扩散板，该扩散板具有若干个在该扩散板一上游侧与一下游侧之间通过的气体通道。这些气体通道中的至少一个包括由一节流孔连接的一第一孔和一第二孔。该第一孔从该扩散板的上游侧延伸，而该第二孔从该扩散板的下游侧延伸。该节流孔具有分别小于该第一和第二孔的直径。

Description

用于大面积等离子增强化学气相淀积的气体分配板组件
技术领域
本发明涉及一种在工艺腔中用于分配气体的气体分配板组件及方法。
背景技术
液晶显示器或平板是通常用于有源矩阵显示器(如计算机与电视监视器)。通常，平板包括夹置一层液晶材料于其间的二层玻璃板。至少一玻璃板包括连接至电源供应器的设置于其上的至少一导电膜。从电源供应器供应至该导电膜的电源改变该液晶材料的方向，在显示器上产生可视图象，如文字或图形。一种常常用以生产平板的制程是等离子增强化学气相淀积(PECVD)。
等离子增强化学气相淀积通常是用于在如平板或半导体晶片的基材上淀积薄膜。等离子增强化学气相淀积(PECVD)一般是通过将前体气体(precursor gas)引入含有平板的真空腔而实现。该前体通常是被向下引导通过一位置靠近工艺腔顶部的分配板。在该工艺腔内的前体气体是通过从一个或若干连接至该工艺腔的射频(RF)来源施加的射频电源获得能量(如激发)成为等离子。被激发气体反应后，在位于温度控制基材支撑件上的平板表面上形成一层材料。在平板容置一层低温多晶硅的应用中，该基材支撑件可被加热至超过摄氏400度。在反应中产生的挥发性副产品会从该工艺腔经过排气系统抽吸出去。
由PECVD技术加工的平板代表性地较大，常常超过360毫米×460毫米和1平方米尺寸的范围。可预见在未来大面积基材将达到和超过4平方米。特别是与用于200毫米和300毫米半导体晶片制程的气体分配板相比，用以提供均匀制程气体流过平板的气体分配板在尺寸上成比例地大。
用于平板工艺的大型气体分配板具有一些导致气体分配板制造费用高的制造问题。例如，通过气体分配板形成的气流孔的直径，相对于该气体分配板的厚度较小(例如一通过1.2英时厚板的0.062英时直径孔)，导致在孔形成时钻头断裂情况高频率地发生。移走断裂钻头既耗时而且可能造成整个气体分配板损伤。此外，当通过气体分配板而形成的气流孔数目正比于平板的尺寸时，形成于各板内的大量的孔在制造该板时不利地造成故障的可能性高。再者，高数量的孔与最少化钻头断裂需要的关注结合，会导致较长的制造时间，因而提高制造费用。
由于材料与制造气体分配板的费用很高，以可有效率和费用经济的方法制造的配置，来研发气体分配板将是有益的。再者，为配合超过1.2平方米的平板制程，下一代气体分配板的尺寸会增加，上述问题的解决越来越重要。
虽然满足设计大型气体分配板的成本考虑很重要，性能特性必定不能忽略。例如，气流孔的配置、位置与密封直接地影响到淀积性能，如淀积均匀性和清洗特性。例如，如果通过气体分配板形成的气流孔产生太多的背压，用以清洗该板的游离氟会有一再结合的倾向，不利地降低清洗的效果。再者，因为氟通常是一膜污染物，气体分配板的表面积应构成为促进在其间的良好流动，同时提供氟附着于该板的最小面积。
因此，需要经过改进的气体分配板组件。
发明内容
本发明提供一种在工艺腔中用于分配气体的气体分配板组件的装置。在具体实施例中，气体分配板组件包括扩散板，其具有若干个在该扩散板的上游侧与下游侧之间流通的气体通道。该气体通道中的至少一个包括由节流孔连接的第一孔与第二孔。该第一孔从扩散板的上游侧延伸，而该第二孔从下游侧延伸。该节流孔具有分别小于第一孔或第二孔的直径。
附图说明
本发明的特征可以通过参考以下结合附图的详细说明而容易地了解，其中：
图1是具有本发明的气体分配板组件的一具体实施例的工艺腔的剖面示意图；
图2是图1中所示气体分配板组件的部份剖面图；
图3是一气体分配板组件的另一具体实施例的部份剖面图；
图4是图2中所示的气体分配板组件的部份上视图；
图5是包括一扩散板组件的气体分配板组件的另一具体实施例的部份剖面图；及
图6是图5中的气体分配板组件的一具体实施例的另一部份剖面图。
为有助于了，尽可能地使用相同的附图标记表示附图中共有的相同组件。
附图标记说明
100  系统               102  工艺腔
104  气源               106  壁
108  底部               110  盖组件
112  制程容积           114  抽吸加压通气室
116  穿孔区             118  气体分配板组件
120  内侧               122  电源
124  铝本体             126  底侧
128  孔                 130  电源
132  加热器             134  上侧
138  基材支撑组件       140  玻璃基材
142  主轴               146  风箱
148  遮蔽框架           150  提升销
154  提升板             156  轴环
158  扩散板             160  悬挂板
162  气体通道           164  加压通气室
166  孔径               168  上部
170  下部               180  连接口
182  清洗源             202  上游侧
204  下游侧             206  边界
210  第一孔             212  第二孔
214  节流孔             216  喇叭状角
218  底部                220  底部
230  第一深度            232  深度
234  长度                244  定位销
246  槽                  260  第二凸缘
262  主体                264  第一凸缘
266  安装孔              268  孔固定件
270  孔                  280  距离
282  孔边缘              300  气体分配板组件
500  分配板组件          502  扩散板组件
504  调整板              506  扩散板
508  气体通道            510  加压通气室
512  制程区              520  第一孔
522  第二孔              524  节流孔
542  衬套                544  销
546  定位特征            600  固定系统
602  固定件              604  螺帽
606  头部                608  柄部
610  螺纹部份            612  平底扩孔
614  上表面              616  孔
618  孔                  620  颈部
622  槽                  624  孔
624  下游侧              650  扩散板组件
652  调整板              654  扩散板
660  气体通道
具体实施方式
本发明提供一种在工艺腔中用于提供传送气体的气体分配板组件。本发明以下的示范性说明是参考一配置用于处理大面积基材的等离子增强化学气相淀积系统，如来自AKT(美国加州圣塔克拉市应用材料公司的分部)的等离子增强化学气相淀积(PECVD)系统。然而，应了解本发明可应用在其它系统配置中，如刻蚀系统、其它化学气相淀积系统及任何在一工艺腔中需要分配气体的其它系统，包括配置以处理圆形基材的这些系统。
图1是一等离子增强化学气相淀积系统100的具体实施例的剖面图。系统100一般包括一连接至一气源104的工艺腔102。工艺腔102具有部份地限定一制程容积112的壁106与一底部108。制程容积112典型地是经过在壁106上的一通道口(未显示)存取，其有助于一基材140移入与移出工艺腔102。壁106与底部108典型地是从一整块铝或其它与制程能兼容的材料制成。壁106支撑一盖组件110，该盖组件110含有一将制程容积112连接至一排气口(包括各种未显示的抽吸组件)的抽吸加压通气室114。
一温度控制基材支撑组件138是中置于工艺腔102内。支撑组件138在制程中支撑基材104。在一具体实施例中，基材支撑组件138包括一铝本体124，其封装至少一个内嵌式加热器132。
设置于支撑组件138内的加热器132(如一电阻元件)是连接至一电源130且可控制地加热支撑组件138与位于其上的玻璃基材140至一预定温度。典型地在一CVD制程中，根据待淀积材料的淀积制程参数而定，加热器132会维持玻璃基材140在介于约摄氏150到至少约460度之间的均匀温度。
通常，支撑组件138具有一底侧126与一上侧134。上侧134支撑玻璃基材140。上侧134支撑玻璃基材140。底侧126具有一与其连接的主轴142。主轴142连接该支撑组件138至一提升系统(未显示)，该提升系统在一升高的制程位置(如图标)和一有助于将基材传送至和自工艺腔102传送的较低位置之间移动支撑组件138。另外主轴142提供一导管，供电线与热电偶在支撑组件138与系统100其它组件之间的导线用。
一风箱146连接在支撑组件138(或主轴142)与工艺腔102的底部108之间。该风箱146提供在制程容积112与工艺腔102外部大气之间的真空密封，而有助于支撑组件138的垂直运动。
支撑组件138通常是接地，使得由一电源122供给位于盖组件110与基材支撑组件138(或位于/接近该腔的盖组件的其它电极)之间的气体分配板组件118的射频电源，可激发出现在支撑组件138与分散板组件118间的制程容积112内的气体。来自电源122的射频电源通常是经过选择与该基材的尺寸相称，以驱动该化学气相淀积制程。
另外支撑组件138支撑一限制周边的遮蔽框架148。通常遮蔽框架148防止在基材140与支撑组件138的边缘淀积，使得基材不会粘到支撑组件138。
支撑组件138具有若干个穿通设置的孔128，以容纳若干个提升销150。提升销150通常是由陶瓷或经电镀的铝构成。通常当提升销是在一正常位置(即相对支撑组件138抽回)时，提升销150具有实质上与支撑组件138的一上侧134齐平或稍为凹下的第一端。该第一端典型地呈喇叭状以防止提升销150掉下通过孔128。此外，提升销150具有一延伸至支撑组件138底侧126之上的第二端。提升销150可由一提升板154相对支撑组件138加以致动，以从支撑面130突出，因而将基材置放在一与支撑组件138分开的位置。
提升板154是置于基材支撑组件138的底侧126，与工艺腔102的底部108之间。提升板154是借助一环绕部份主轴142的轴环156连接至一致动器(未显示)。风箱146包括一上部168与一下部170，允许主轴142与轴环156独立移动，同时维持制程容积112与工艺腔102外部的环境隔离。通常，当支撑组件138与提升板154彼此相对移近时，提升板154会被致动以造成提升销150从上侧134伸出。
盖组件110为制程容积112提供一上部边界。盖组件110通常可移除或开启，以维修工艺腔102。在一具体实施例中，该盖组件110是由铝制造。
盖组件110包括一连接至外部泵系统(未显示)的抽吸通气室114形成于其内。抽吸通气室114是用以均匀地从制程容积112和工艺腔102中将气体和制程副产物引导出去。
盖组件110典型地包括一进入口180，由气源104提供的制程气体是经过该进入口180导入工艺腔102。进入口180也连接至一清洗源182。清洗源182通常提供一清洁剂(如游离氟)导入工艺腔102，以从工艺腔硬件(包括气体分配板组件118)移除淀积副产品及薄膜。
气体分配板组件118是连接至盖组件110的内侧120。气体分配板组件118通常是经配置以充分跟随玻璃基材140的轮廓，例如用于大面积基材的多边形与晶片的圆形。气体分配板组件118包括一穿孔区域116，经过该区域由气源104供应的制程与其它气体被传送至制程容积112。气体分配板组件118的穿孔区域116经配置以提供通过气体分配板组件118进入工艺腔102的气体的均匀分配。可采用受益于本发明的一气体分配板组件，在2001年8月8日由Keller等申请的09/922,219号美国专利；由Blonigan等于2002年5月6日申请的10/140,324号；2003年1月7日申请的第10/337,483号；及2002年11月12日授予White等的6,477,980号美国专利中记载，因此通过引用全部被合并进本发明。
气体分配板组件118典型地包括由一悬挂板160悬挂的扩散板158。扩散板158与悬挂板160可选择性地至少包含一单一构件(如图3中所示的气体分配板组件300)。若干个气体通道162是通过扩散板158而形成，以允许一预定分散的气体通过气体分配板组件118进入制程容积112。悬挂板160维持扩散板158与盖组件110的内表面120为空间隔离的关系，因而限定一加压通气室164于其间。加压通气室164允许气体流经盖组件110以均匀地分布在扩散板158整个宽度，使得气体均匀地供应至中央穿孔区域116之上，而且以一均匀分配方式流过气体通道162。
悬挂板160典型地由不锈钢、铝或镍或其它可传导射频的材料制造。悬挂板160包括一中央孔径166，其有助于使气体无障碍地从形成于盖组件110中的气体进入口180，经过扩散板158的气体通道162流过悬挂板160。悬挂板160通常提供一安装面，用于连接扩散板158至盖组件110或腔壁106。
扩散板158典型地由不锈钢、铝或镍或其它射频传导材料制造。扩散板158被配置成一厚度，可维持孔径166二侧的足够平坦度而不会相反地影响基材制程。在一具体实施例中，扩散板158具有约1.2英时的厚度。
图2是扩散板158的部份剖面图。扩散板158包括一面对盖组件110的第一或上游侧202，及一面对支撑组件138的相对的第二或下游侧204。在一具体实施例中，扩散板158由铝制造而且在至少该下游侧204上经电镀。已发现下游侧204的电镀可提高等离子的均匀性。上游侧202可视需要不电镀以限制在清洗时氟的吸收，氟随后在制程中会被释出而且成为一污染源。
在一具体实施例中，各气体通道162由一接流孔214连接至一第二孔212的第一孔210限定，节流孔214、第二孔212与第一孔210经组合以形成一通过扩散板158的流体路径。第一孔210上从扩散板158的上游侧202延伸一第一深度230至一底部218。第一孔210的底部218可为渐缩、成斜面、切角或成圆角，以使气体从第一孔流进节流孔210时的流动限制最小。第一孔210通常具有一约0.093英时至约0.218英时的直径，而且在一具体实施例中为约0.156英时。
第二孔212是形成于扩散板158中，且从下游侧204延伸一约0.250英时至约0.375英时的深度232。第二孔212的直径通常约0.187英时至0.375英时，而且可呈约22到至少35度的角度216的喇叭状。在一具体实施例中，第二孔212具有0.320英时的直径，该喇叭状角度216约35度。在另一具体实施例中，相邻第二孔212的孔边缘282间的距离280约25到85毫时。第一孔210的直径通常(但不限于)至少等于或小于第二孔212的直径。第二孔212的底部220可为渐缩、成斜面、切角或成圆角，以使气体从节流孔214流出，进入第二孔212时的气体压力损失最小。再者，当节流孔214接近使用时的下游侧204，以使第二孔212和面对基材的下游侧的暴露表面积最小时，扩散板158暴露于腔清洁过程中提供的氟中的下游侧面积会减少，因而减少淀积膜的氟污染。
节流孔214通常连接第一孔210的底部218和第二孔212的底部220。该节流孔通常具有约0.25毫米至约0.76毫米的直径(约0.02至0.3英时)，而且典型地具有约0.040至约0.085英时的长度234。节流孔214的长度234与直径(或其它几何形状特性)是加压通气室164的背压的主要来源，其提高通过扩散板158的上游侧的气体的均匀分散。节流孔214在若干个通道162中典型地均匀配置，然而，通过节流孔214的限制在气体通道162中可被不同地配置，以提高扩散板158的一区域相对于另一区域更多的气体流过。例如，在靠近扩散板158的周边206的这些气体通道262中，节流孔214可具有一较大的直径及/或一较短的长度234，使得较多气体流过穿孔区116的边缘，以增加玻璃基材周边的淀积率。
当节流孔214的长度234相当短，而且位于二较大直径孔210、212之间时，节流孔214可有效地以最小钻头断裂可能性在本发明的扩散板158内制造。因此，相对于常规的有在穿孔区域形成上千气体通道而经常发生钻头断裂且须将其抽出而产生费用的扩散板，本发明的扩散板158能以一减低的费用制造。再者，因为扩散板158直接暴露于经由盖组件110进入清洁剂的上游侧202的表面积，比常规具有直接形成于该板上游侧的气流节流孔的扩散板相当小，经电镀的扩散板158在经过清洁循环的过程时具有减少氟停留的倾向，因而减少在制程中可能释放的氟量。
节流孔214提供的整体限制直接影响扩散板158的上游背压，而且因此应配置以防止所在清洗中使用的游离氟再结合。就这点而言，节流孔直径应与孔的数量平衡。当增加节流孔直径以允许使用较少的孔而减低制造费用时，相邻第二孔212的边缘282之间的间隔可在25至50毫时的较低范围中选择，以达到比常规具有较大气流孔密度的扩散板更均匀的淀积性能。
在图2的具体实施例中，悬挂板160与扩散板158是以一有助于扩散板158的热膨胀与收缩的方式连接，而没有翘曲、变形或以影响气流通过气体分配板组件118的均匀性的方式相反地对扩散板158施加力。在一具体实施例中，悬挂板160是一多边形框架，其包括一从主体262向外延伸的第一凸缘264，与一在第一凸缘264相反的方向往内延伸的第二凸缘260。另一选择是，悬挂板160可为一有凸缘的圆柱。第一凸缘264包括若干个安装孔266，各对准一形成于盖组件110内的螺孔278。孔固定件268分别通过安装孔266，且螺旋入螺孔278以固设悬挂板160至盖组件110。
第二凸缘260包括若干个分别维持置一定位销244的孔270于其内。定位销244(其中之一显示于图2中)从第二凸缘260朝第一凸缘264与盖组件110的内表面120向上延伸。通过扩散板158形成的孔或槽246适于分别容置一定位销244。
此外请参考图4中所示的悬挂板160的部份俯视剖面图，在扩散板158中的槽246相对于定位销244足够大，以允许扩散板158相对于定位销244移动，以有助于补偿在扩散板158、悬挂板160与盖组件110间的热膨胀差异。如图4所示，槽246典型地在正交方向沿扩散板158的各侧定位，以配合板组件118沿二轴向的膨胀。或者是，槽246可径向地配置用于圆形气体分配板。因此，当气体分配板组件118加热及冷却时，扩散板158相对盖组件110自由地移动，因而维持不致有造成气体分配板组件118曲或改变通过气体分配板组件118的气流模式的扭曲或其它受力情形。另一选择是，槽可形成在悬挂板160中，以容置从扩散板158延伸的销。
图5是气体分配板组件500的另一具体实施例的部份剖面图。气体分配板组件500包括设置于与上述类似的盖组件110的一悬挂板160与一扩散板组件502。扩散板组件502包括一连接至扩散板506的调整板504。若干个气体通道508是形成通过调整板504与扩散板506，以从一界定于气体分配板组件500与盖组件110之间的加压通气室510，分配气体至-工艺腔的制程区域512。
气体通道508是经配置成与上述的气体通道162类似，除了各气体通道508的上游部份形成通过调整板504，而下游部份形成于扩散板506中。例如，至少一部份第一孔520形成于调整板504内，而至少一部份第二孔形成于扩散板506中。一流动地连接第一与第二孔520、522的节流孔524，可至少部份地形成于调整板504或扩散板506中的至少一个。
在图5所示具体实施例中，第一孔520形成通过调整板504且部份在扩散板506中。第二孔522与节流孔524是形成于扩散板506内。因为节流孔524的孔长度与深度(即，在一板内的位置)最小化，在各板504、506中分别制造孔与节流孔520、522、524允许更有效率的制造，进一步减少钻头段断裂的发生，因而更减少制造费用。
若干个定位特征546被设置于调整板504与扩散板506间，以确保形成于调整板504的气体通道508的部份，与扩散板506之间的配合与对准。在一具体实施例中，定位特征546是若干个定位销544(已显示其中之一)，是置于调整板504与扩散板506间。在图5所示的具体实施例中，定位销544从扩散板506延伸且啮合一经压配通过调整板504的配合衬套542。销544可加以定位，使得气体通道508的对准，及在调整板504与扩散板506相对于盖组件110的预定方位得以确保。调整板504与扩散板506可以任何种方式固设在一起，包括固定件、铆钉、丝、软焊、焊接、粘着、夹具与其类似方式。
图6包括若干个气体通道660的气体分配板组件650的另一具体实施例的部份剖面图，这些若干个气体通道650是形成通过一调整板652与一扩散板654，其中调整板652是可调整地固定于扩散板654。在图6的具体实施例中，调整板652与扩散板654是借助一分离式固定系统600(图6中显示其一)以正常间隙连接。气体通道660是以类似上述气体通道508的方式配置。
各分离式固定件系统600包括一固定件602与一配合螺帽604，二者通常均由铝或其它适合材料制造。在使用铝固定件，以使最小化固定件材料对制程的影响是有利的应用中，分离式固定件系统600允许调整板652与扩散板654分开，而传统铝固定件将会卡住而需要移除和再螺入组件。此允许更换调整板652以改变气体通道660的流动特征，因而允许气体分配板组件650适合为一特定制程修改而无须更换整个组件。此特征在先前组合的由Blonigan等于2003年1月7日申请的10/337,483号美国专利申请(事务所档号7651号)中进行详述讨论。
在一具体实施例中，固定件602具有一头部606、一柄部608及一螺纹部份610。头部606典型地置于一形成在调整板652上表面614内的平底扩孔612。一孔616是通过调整板652形成，与平底扩孔612同心，以容置固定件602的柄部608。柄部608通过一经由扩散板654形成而与孔616同心地对准的孔618。柄部608通常包括一当固定件602承受一超过一预定量的扭矩时可适于切变的颈部620。
螺帽604典型地置于一形成在与调整板652相对的扩散板654下游侧624的槽622。槽622是与一通过扩散板654形成的孔618连通。柄部608通过孔616、618，以露出螺纹部份610于槽622中。置于槽622中的螺帽604是与固定件602的螺纹部份610配合。槽622经配置以当固定件602被螺紧而迫使板652、654彼此靠紧时，防止螺帽604旋转。此外，扩散板组件650的双板配置进一步有利于经济地制造气体通道660，是借助充分降低在制造时形成节流孔694所需的距离，因而进一步减少制造时钻头断裂的发生。
因此，本发明已提供一制造费用经济的气体分配板组件。再者，该气体分配板组件通过改变横跨该板宽度的节流孔配置及/或通过更换该组件之一的板，而有利地允许调整气体流动特征。
虽然结合现有技术已经示出和详细说明本发明的几个较佳实施例，本领域技术人员可容易地想出很多其他变化的具体实施例，而仍不脱离以上的说明。

Claims (23)

1.一种用于工艺腔的气体分配板组件，包括：
扩散板，具有上游侧与下游侧；及
若干个在该扩散板的该上游侧与下游侧之间通过的气体通道，其中这些气体通道中的至少一个，包括：
第一孔，是从该上游侧延伸且具有第一直径；
第二孔，是与该第一孔同心地从该下游侧延伸，且具有第二直径；及
流动地连接该第一孔与该第二孔的节流孔，且具有比该第一孔与该第二孔小的直径。
2.如权利要求1所述的气体分配板组件，其特征在于，所述的第二孔程喇叭状。
3.如权利要求2所述的气体分配板组件，其特征在于，所述的第二孔呈约22到至少约35度的喇叭状角。
4.如权利要求1所述的气体分配板组件，其特征在于，所述的上游侧表面未电镀铝而下游侧表面经过电镀。
5.如权利要求1所述的气体分配板组件，其特征在于，所述的扩散板进一步包括：
第一板，具有该气体通道的该第一孔的至少一部份形成于其内；及
第二板，连接至该第一板，且具有该气体通道的该第二孔的至少一部份形成于其内。
6.如权利要求1所述的气体分配板组件，其特征在于，进一步包括：
悬挂板，具有实质多边形孔径，且适于支撑该扩散板于工艺腔中。
7.如权利要求6所述的气体分配板组件，其特征在于，进一步包括：
若干个在该悬挂板与扩散板间延伸的销，这些销中至少一个与形成在该悬挂板或扩散板之一中的槽的配合，是可容纳热膨胀之差。
8.如权利要求1所述的气体分配板组件，其特征在于，所述的扩散板是多边形。
9.如权利要求1所述的气体分配板组件，其特征在于，通过该扩散板形成的这些节流孔中的至少一个具有与其它节流孔中至少一个不同的流动限制特性。
10.一种用于工艺腔的气体分配板组件，包括：
扩散板组件，具有铝上游侧与下游侧；及
若干个在该扩散板组件的该上游侧与该下游侧之间通过的气体通道，其中这些气体通道中至少一个，包括：
从该上游侧延伸的第一孔；
流动地连接至该第一孔底部的节流孔；及
喇叭状第二孔，是从该节流孔延伸至该下游侧，其中该节流孔的直径小于该第一孔与该第二孔。
11.如权利要求10所述的气体分配板组件，其特征在于，第一孔的该底部是渐缩、斜面、圆角或切角中至少一个。
12.如权利要求10所述的气体分配板组件，其特征在于所述的第二孔呈约22到至少约35度的喇叭状角。
13.如权利要求10所述的气体分配板组件，其特征在于，所述的下游侧表面具有电镀涂层且该上游侧表面未电镀铝。
14.如权利要求10所述的气体分配板组件，其特征在于，所述的下游与上游侧表面具有电镀涂层。
15.如权利要求10所述的气体分配板组件，其特征在于，所述的扩散板组件进一步包括：
第一板，具有该气体通道的该第一孔的至少一部份形成于其内；及
第二板，连接至该第一板，且具有该气体通道的该第二孔的至少一部份形成于其内。
16.如权利要求10所述的气体分配板组件，其特征在于，进一步包括：
悬挂板，具有限定一实质多边形孔径的向内延伸凸缘，其中该悬挂板的该凸缘适于支撑该扩散板组件。
17.如权利要求16所述的气体分配板组件，进一步包括：
若干个在该悬挂板与扩散板之间延伸的销，这些销中的至少一个定位于形成在该悬挂板或扩散板中的一个的槽内。
18.如权利要求10所述的气体分配板组件，其特征在于，所述的扩散板是多边形。
19.如权利要求18所述的气体分配板组件，其特征在于，通过该扩散板形成的这些节流孔中的至少一个，具有与其它节流孔中的至少一个不同的流动限制特性。
20.一种用于工艺腔的气体分配板组件，包括：
多边形铝质扩散板组件，具有对着上板设置的下板，该扩散板组件的上游侧限定于该上板中，该扩散板组件的下游侧限定于该下板中；及
若干个在该扩散板的中央区域的该上游侧与下游侧之间通过的气体通道，其中这些气体通道中的至少一个，包括：
第一孔，是从该上游侧延伸；
喇叭状第二孔，是与该第一孔同心地从该下游侧延伸，而且具有的直径至少约等于或大于该第一孔的直径；及
节流孔，流动地连接该第一孔与第二孔，而且具有小于该第一孔的直径。
21.如权利要求20所述的气体分配板组件，其特征在于，所述的介于相邻第二孔的喇叭状边缘的间隔约25毫时。
22.如权利要求20所述的气体分配板组件，其特征在于，所述的扩散板组件的该上游侧与该下游侧限定至少约1.2时的厚度。
23.如权利要求20所述的气体分配板组件，其特征在于，所述的从该扩散板组件的该上游侧延伸的该第一孔具有约0.093至约0.218时的直径。
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CN102443783A (zh) 2012-05-09
TWI276701B (en) 2007-03-21
TW200500492A (en) 2005-01-01
JP5302865B2 (ja) 2013-10-02
CN1754008B (zh) 2012-01-11
US20040206305A1 (en) 2004-10-21
KR100696021B1 (ko) 2007-03-16
JP2010077537A (ja) 2010-04-08
US6942753B2 (en) 2005-09-13
KR20050096111A (ko) 2005-10-05

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