CN1758441A - 图像传感器及其制造方法 - Google Patents
图像传感器及其制造方法 Download PDFInfo
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- CN1758441A CN1758441A CNA2005100656539A CN200510065653A CN1758441A CN 1758441 A CN1758441 A CN 1758441A CN A2005100656539 A CNA2005100656539 A CN A2005100656539A CN 200510065653 A CN200510065653 A CN 200510065653A CN 1758441 A CN1758441 A CN 1758441A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 229910052751 metal Inorganic materials 0.000 claims abstract description 81
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- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 4
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- 238000005530 etching Methods 0.000 description 9
- 238000009413 insulation Methods 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
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- 229920002120 photoresistant polymer Polymers 0.000 description 3
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- 150000004706 metal oxides Chemical class 0.000 description 1
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- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR7485/04 | 2004-02-05 | ||
KR1020040007485A KR100541708B1 (ko) | 2004-02-05 | 2004-02-05 | 이미지 센서 및 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1758441A true CN1758441A (zh) | 2006-04-12 |
CN1758441B CN1758441B (zh) | 2014-08-06 |
Family
ID=36703714
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200510065653.9A Active CN1758441B (zh) | 2004-02-05 | 2005-02-05 | 图像传感器及其制造方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8203194B2 (zh) |
KR (1) | KR100541708B1 (zh) |
CN (1) | CN1758441B (zh) |
TW (1) | TWI383492B (zh) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007081137A (ja) * | 2005-09-14 | 2007-03-29 | Fujifilm Corp | 光電変換素子及び固体撮像素子 |
US7565220B2 (en) | 2006-09-28 | 2009-07-21 | Lam Research Corporation | Targeted data collection architecture |
KR100892345B1 (ko) * | 2006-12-06 | 2009-04-08 | 한국전자통신연구원 | 투명 전자소자용 배선구조물 |
KR100854243B1 (ko) * | 2006-12-27 | 2008-08-25 | 동부일렉트로닉스 주식회사 | 이미지 센서 제조방법 |
KR20080060484A (ko) * | 2006-12-27 | 2008-07-02 | 동부일렉트로닉스 주식회사 | 이미지 센서 및 그 제조방법 |
KR20080062825A (ko) * | 2006-12-29 | 2008-07-03 | 동부일렉트로닉스 주식회사 | 이미지 센서 제조방법 |
KR100891075B1 (ko) * | 2006-12-29 | 2009-03-31 | 동부일렉트로닉스 주식회사 | 이미지 센서의 제조방법 |
US7661077B2 (en) * | 2007-09-06 | 2010-02-09 | International Business Machines Corporation | Structure for imagers having electrically active optical elements |
US7642582B2 (en) * | 2007-09-06 | 2010-01-05 | International Business Machines Corporation | Imagers having electrically active optical elements |
US7935560B2 (en) * | 2007-09-06 | 2011-05-03 | International Business Machines Corporation | Imagers having electrically active optical elements |
KR100902584B1 (ko) * | 2007-12-03 | 2009-06-11 | 주식회사 동부하이텍 | 반도체 소자 및 그의 제조 방법 |
JP5663900B2 (ja) * | 2010-03-05 | 2015-02-04 | セイコーエプソン株式会社 | 分光センサー装置及び電子機器 |
JP5862025B2 (ja) * | 2011-03-16 | 2016-02-16 | セイコーエプソン株式会社 | 光学センサー及び電子機器 |
DE112016005522T5 (de) * | 2015-12-03 | 2018-08-30 | Sony Semiconductor Solutions Corporation | Halbleiter-Bildgebungselement und Bildgebungsvorrichtung |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4140545A (en) * | 1975-12-18 | 1979-02-20 | Sharp Kabushiki Kaisha | Plural solar cell arrangement including transparent interconnectors |
JPS5766665A (en) | 1980-10-14 | 1982-04-22 | Ricoh Co Ltd | Image sensor |
US4412900A (en) * | 1981-03-13 | 1983-11-01 | Hitachi, Ltd. | Method of manufacturing photosensors |
GB9314402D0 (en) * | 1993-07-12 | 1993-08-25 | Philips Electronics Uk Ltd | An imaging device |
US5536950A (en) * | 1994-10-28 | 1996-07-16 | Honeywell Inc. | High resolution active matrix LCD cell design |
US6011215A (en) * | 1997-12-18 | 2000-01-04 | United Solar Systems Corporation | Point contact photovoltaic module and method for its manufacture |
US6071809A (en) * | 1998-09-25 | 2000-06-06 | Rockwell Semiconductor Systems, Inc. | Methods for forming high-performing dual-damascene interconnect structures |
JP2000150846A (ja) | 1998-11-12 | 2000-05-30 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP3795298B2 (ja) * | 2000-03-31 | 2006-07-12 | 豊田合成株式会社 | Iii族窒化物系化合物半導体発光素子の製造方法 |
KR20020045868A (ko) | 2000-12-11 | 2002-06-20 | 박종섭 | 포토다이오드의 면적을 증가시킬 수 있는 이미지 센서 및그 제조 방법 |
US6525758B2 (en) * | 2000-12-28 | 2003-02-25 | Polaroid Corporation | Integral organic light emitting diode fiber optic printhead utilizing color filters |
US6445007B1 (en) * | 2001-03-19 | 2002-09-03 | Uni Light Technology Inc. | Light emitting diodes with spreading and improving light emitting area |
JP4275336B2 (ja) * | 2001-11-16 | 2009-06-10 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2004014802A (ja) | 2002-06-06 | 2004-01-15 | Sony Corp | 撮像装置 |
JP4094386B2 (ja) * | 2002-09-02 | 2008-06-04 | 株式会社半導体エネルギー研究所 | 電子回路装置 |
JP4117540B2 (ja) * | 2002-10-17 | 2008-07-16 | ソニー株式会社 | 固体撮像素子の制御方法 |
US6861686B2 (en) * | 2003-01-16 | 2005-03-01 | Samsung Electronics Co., Ltd. | Structure of a CMOS image sensor and method for fabricating the same |
-
2004
- 2004-02-05 KR KR1020040007485A patent/KR100541708B1/ko active IP Right Grant
-
2005
- 2005-02-02 TW TW094103244A patent/TWI383492B/zh active
- 2005-02-04 US US11/051,662 patent/US8203194B2/en active Active
- 2005-02-05 CN CN200510065653.9A patent/CN1758441B/zh active Active
-
2012
- 2012-06-13 US US13/495,167 patent/US8580598B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR100541708B1 (ko) | 2006-01-10 |
US20120252157A1 (en) | 2012-10-04 |
CN1758441B (zh) | 2014-08-06 |
US20050173773A1 (en) | 2005-08-11 |
US8203194B2 (en) | 2012-06-19 |
US8580598B2 (en) | 2013-11-12 |
KR20050079306A (ko) | 2005-08-10 |
TWI383492B (zh) | 2013-01-21 |
TW200527661A (en) | 2005-08-16 |
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Owner name: KONO SCIENCE CO., LTD. Free format text: FORMER OWNER: MAGNACHIP SEMICONDUCTOR LTD Effective date: 20090710 |
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Effective date of registration: 20090710 Address after: Delaware Applicant after: Magnachip Semiconductor Ltd. Address before: North Chungcheong Province Applicant before: Magnachip Semiconductor Ltd. |
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