CN1835196B - Method for manufacturing semiconductor device and semiconductor device - Google Patents
Method for manufacturing semiconductor device and semiconductor device Download PDFInfo
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- CN1835196B CN1835196B CN2006100718370A CN200610071837A CN1835196B CN 1835196 B CN1835196 B CN 1835196B CN 2006100718370 A CN2006100718370 A CN 2006100718370A CN 200610071837 A CN200610071837 A CN 200610071837A CN 1835196 B CN1835196 B CN 1835196B
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- resin bed
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- scribing
- interarea
- back side
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Abstract
A semiconductor device production method which includes steps of: preparing a wafer on which multiple integrated circuits are formed on a principal face; forming a rewiring which is electrically connected to the integrated circuits via a pad electrode; and dicing the wafer after forming an electrode terminal on the rewiring, including steps of: forming a first resin layer by sealing at least the rewiring and the electrode terminal formed on the principal face of the wafer with a first resin; processing a first dicing from a back face of the wafer to the principal face of the wafer or halfway to the first resin layer when the first resin layer is formed; forming a second resin layer by sealing a cut line outlined upon the first dicing and the back face of the wafer continuously with a first resin; and processing a second dicing while leaving the second resin layer which covers a side face outlined upon the first dicing.
Description
Technical field
The present invention relates to method, semi-conductor device manufacturing method and semiconductor device, wherein encapsulate and in the end the stage is carried out scribing (dicing) at wafer scale.
Background technology
In recent years, for the demand that the function as the device of portable terminal increases and performance improves, it is small and exquisite frivolous and handle faster to be applied to the semiconductor device of these devices according to for example.Cause that with the celebrated semiconductor device of so-called WL-CSP (wafer-level chip scale package) people pay close attention to, because it is applicable to such demand.WL-CSP is manufactured by this way; promptly; at wafer scale; form wiring (rewiring) again, form electrode terminal and resin mouldings (encapsulation); and in the end the stage is carried out scribing, and wherein resin mouldings mainly is in order to protect the IC (integrated circuit) that is formed on the wafer first type surface to avoid the influence of heat, light, physical impact etc.Because such manufacturing process, might make the size of semiconductor device after the encapsulation almost the same little, and what can be sure of is to design with littler size with the IC chip.
Yet, by the cutting of stage in the end (scribing) wafer conventional WL-CSP (semiconductor device) is divided into each semiconductor device, therefore, even the board main of semiconductor device (wafer after the scribing) is sealed by resin mold, the cutting surface of substrate side surfaces still is exposed.Existing problem is that the side of exposure is easily owing to the physical impact during the manufacturing step is damaged.And moisture can be penetrated between the first type surface and resin bed of substrate, and in some cases, wiring and electrode terminal may oxidized and corrosion again.
Because such problem is made semiconductor device in the following manner, that is, not only the side of the interarea of substrate but also substrate or the side of substrate and the back side are all sealed by resin mold.The such semiconductor device that is sealed by resin mold wherein is enhanced to avoid the damage to substrate, and so benefit is, can save repair technology to failure area because for example during scribing because chip and the defect area that produces on substrate can be capped.
Usually, figure 12 illustrates processing, wherein use the side 1a and the back side 1b of resin bed 2 and 3 covered substrates 1 for semiconductor device A shown in Figure 11.At first, preparation wafer 1 has formed a plurality of IC 4 on its interarea 1c, form the wiring again 6 that is electrically connected to IC 4 via pad electrode 5, and forms metal column 7 on 6 connecting up again, and it is made of copper and is column.
As shown in figure 13, after the back side 1b that the resin plate 9 (second resin bed 3) that is attached with the scribing band of being made by elastomeric material (dicing tape) 8 on it is fixed to wafer 1 goes up, with the direction of interarea 1c quadrature on carry out first scribing from the interarea 1c of substrate 1.In this first scribing, T1 is adjusted into along the centre position of the thickness direction of scribing band 8 with the scribing degree of depth.Interarea 1c with resin-sealed line of cut that in first scribing, forms 10 and wafer 1.This first resin is first resin bed 2, and it is thick like that it is molded into the metal column 7 that embeds on the interarea 1c that is formed on wafer 1.
And, as shown in figure 14, the surperficial 2a that polishes first resin bed 2 is to expose the top 7a of cylindrical metal post 7, and salient point 11 is attached to the top 7a of this exposure, salient point 11 is bump electrodes and is the inlet of electricity and signal. scratch the zone that is in the center on (second scribing) line of cut 10 Widths substantially once more from the surperficial 2a of first resin bed, wherein line of cut 10 forms profile in first scribing, and filled first resin therein. in this technology, carry out second scribing in the following manner, that is, thus stay the side (cut surface) that first resin bed 2 covers in first scribing substrate 1 (wafer after the scribing) that forms profile. the scribing degree of depth T2 of second scribing approximately and the surperficial 2a from first resin bed 2 to form the degree of depth of slight line of cut the same dark. semiconductor device A is according to such process quilt scribing.
At last, after having removed scribing band 8, finished the manufacturing of semiconductor device shown in Figure 11.Owing to be not only interarea 1a, and side 1a and back side 1b all cover by first resin bed 2 and resin plate 9 (second resin bed 3), so this semiconductor device A has splendid impact resistance.
Yet, in above-mentioned manufacture method, because when first scribing, connect up again or metal column is exposed, so the particle of the distribution due to the scribing is attached on wiring again or the metal column.If particle is attached on wiring again or the metal column, then there is the problem that may be short-circuited, and makes the boundary infiltration of moisture from the substrate and first resin bed because of the low adhesion of first resin bed, make oxidized and corrosion such as wiring more thus.
On the other hand, in the manufacture method of above semiconductor device, bring the maintenance wafer by the scribing of adhering to when first scribing.This scribing band is an elastomer, therefore, makes line of cut be easy to bending owing to wafer slides when the scribing, and has the problem that the dimensional accuracy of semiconductor device reduces after the scribing.
Existence is to this way to solve the problem, that is, replace the scribing band by for example metallic plate and adhere to, and make wafer keep firmer and carry out scribing.Yet the problem of this method of adhesion metal plate is, because it needs time or extra procedure of processing to come adhesion metal plate and separating semiconductor devices, so increased production cost.
And in the manufacture method of above-mentioned semiconductor device, the resin bed of covered substrate side is first resin bed with the interarea continuous molding of substrate.In recent years, according to the demand for thinner semiconductor device, thereby the dorsal part that has carried out polishing substrate makes the thin as far as possible manufacturing step of semiconductor device.In such manufacturing step, make the polishing member rotation of plate-like for example, its dorsal part towards substrate is moved, therefore, in the edge of first resin bed of covered substrate side, may be on the removal direction of first resin bed generation power.Because this phenomenon, first resin bed of existence covering side is removed situation owing to polish.And, because first resin bed of first resin bed of side and interarea is molded continuously, so there is the problem that removal takes place at the interarea place owing to the removal at place, side.In this case, cause another problem, wherein when removing the resin bed of interarea, damaged the IC or the wiring again that are formed on the substrate interarea.
About the problems referred to above, the present invention aims to provide a kind of manufacture method and semiconductor device of semiconductor device, and this device can be firmer and cause the removal of electrical short or resin bed.
And in the manufacture method of above-mentioned semiconductor device, therefore fixedly first resin bed and second resin bed at the covered substrate side and the back side at side and the back side respectively, exist because for example vibration during scribing and the problem peeled off easily.
Therefore the side of the first resin bed covered substrate and interarea, when first resin bed that covers side one side is stripped from, cause peeling off of first resin bed on the first type surface, thereby, there are the IC that is formed on the first type surface, impaired problem such as wiring again.
About the problems referred to above, the present invention aims to provide a kind of manufacture method of semiconductor device, and it does not cause peeling off of resin bed and realizes reliable firm substrate (wafer after the scribing) and semiconductor device.
Summary of the invention
About the problems referred to above, the present invention is devoted to provide the manufacture method and the semiconductor device of semiconductor device, and described method can not cause peeling off of resin bed and realize reliable firm substrate (wafer after the scribing).
A first aspect of the present invention is a kind of method, semi-conductor device manufacturing method, may further comprise the steps: the preparation wafer is formed with a plurality of integrated circuits on the interarea of this wafer; Formation is electrically connected to the wiring again of described integrated circuit via pad electrode; Form electrode terminal in the wiring again described; Form first resin bed by described wiring again and the described electrode terminal that seals at least with first resin on the interarea that is formed on described wafer; When forming described first resin bed, carry out first scribing to the interarea of described wafer or to the centre position of described first resin bed from the back side one side of described wafer; Form the line of cut of profile when being sealed in described first scribing continuously with described second resin and the back side of described wafer forms second resin bed; And, carry out second scribing, form second resin bed of the side of profile when keep covering described first scribing simultaneously.
A second aspect of the present invention is the above-mentioned semiconductor device manufacture method, and is further comprising the steps of: described second resin bed at the back side of the described wafer of polishing sealing, and to expose described wafer.
A third aspect of the present invention is a kind of semiconductor device, comprising: substrate, and described substrate is included in the integrated circuit on the interarea; Be electrically connected to the wiring again of described integrated circuit via electrode pad; Be formed on the electrode terminal in the described wiring again; First resin bed, described first resin bed have the thickness from the interarea of described substrate to the upper surface of described electrode terminal and seal the side of the interarea of described substrate; Bump electrode, described bump electrode are installed on the upper surface of the described electrode terminal on the upper surface that is exposed to described first resin bed; And, second resin bed, described second resin bed cover continuously described substrate the back side and with the direction of described back side quadrature on the side.
A fourth aspect of the present invention is an above-mentioned semiconductor device, and wherein: the edge of described second resin bed on the interarea of described substrate is configured to the surface than more close described first resin bed of interarea of described substrate, and close attachment is in described first resin bed.
A fifth aspect of the present invention is a kind of semiconductor device, comprising: substrate, and described substrate is included in the integrated circuit on the interarea; Be electrically connected to the wiring again of described integrated circuit via electrode pad; Be formed on the electrode terminal in the described wiring again; First resin bed, described first resin bed have the thickness from the interarea of described substrate to the upper surface of described electrode terminal and seal the side of the interarea of described substrate; Bump electrode, described bump electrode are installed on the upper surface of the described electrode terminal on the upper surface that is exposed to described first resin bed; And, second resin bed, described second resin bed covers the side of described substrate.
A sixth aspect of the present invention is a kind of method, semi-conductor device manufacturing method, may further comprise the steps: the preparation wafer is formed with a plurality of integrated circuits on the interarea of this wafer; Formation is electrically connected to the wiring again of described integrated circuit via pad electrode; Form electrode terminal in the wiring again described; By when forming described first resin bed from the back side of described wafer to the interarea of described wafer or carry out first scribing to the centre position of described first resin bed and form the scribing line of cut; Form slit portion, the cross section of described slit portion is spill, and, described slit portion the direction from the described back side to described interarea extend and its degree of depth less than the degree of depth at the upwardly extending described scribing line of cut in the side from the described back side to described interarea; Form the line of cut of profile when being sealed in described first scribing continuously with second resin and the back side of described wafer forms second resin bed; And, carry out second scribing, form second resin bed of the side of profile when keep covering described first scribing simultaneously.
A seventh aspect of the present invention is a kind of method, semi-conductor device manufacturing method, may further comprise the steps: the preparation wafer is formed with a plurality of integrated circuits on the interarea of this wafer; Formation is electrically connected to the wiring again of described integrated circuit via pad electrode; Be that described wiring again go up to form after the electrode terminal, describedly connect up again and be formed on described electrode terminal on the interarea of described wafer sealing at least under the state of embedding with first resin; Form first resin bed and polish described first resin simultaneously, to expose described electrode terminal; On the described electrode terminal that exposes, bump electrode is installed, so that described semiconductor device is connected to the outside; And, cut and draw a described wafer, may further comprise the steps: by with described first resin-sealed described during at wiring and described electrode terminal, during at described first resin bed of formation or when being the described bump electrode of installation on the described electrode terminal from the back side of described wafer to the interarea of described wafer or carry out first scribing to the centre position of described first resin bed and form the scribing line of cut; Form slit portion, the cross section of described slit portion is spill, and, described slit portion the direction from the described back side to described interarea extend and its degree of depth less than the degree of depth at the upwardly extending described scribing line of cut in the side from the described back side to described interarea; Form the line of cut of profile when being sealed in described first scribing continuously with second resin and the back side of described wafer forms second resin bed; And, carry out second scribing, form second resin bed of the side of profile when keep covering described first scribing simultaneously.
A eighth aspect of the present invention is the above-mentioned semiconductor device manufacture method, and wherein: carry out first scribing in the following manner, wherein watch from the plane in the face of the described back side, described scribing line of cut linearly shape extends; And, when forming described second resin bed, on the direction that the direction of extending with described scribing line of cut intersects, print described second resin.
A ninth aspect of the present invention is the above-mentioned semiconductor device manufacture method, wherein: printing described second resin with 15 degree with the bearing of trend of described scribing line of cut to the direction of the angle of intersection of 75 degree.
A tenth aspect of the present invention is the above-mentioned semiconductor device manufacture method, wherein: polish described second resin bed, described second resin bed is retained on the back side of described wafer under the state at the back side of the described wafer of sealing.
A eleventh aspect of the present invention is a kind of semiconductor device, comprising: the integrated circuit on the interarea of substrate; Be electrically connected to the wiring again of described integrated circuit via pad electrode; First resin bed, described first resin bed have the thickness from the interarea of described substrate to the upper surface of described electrode terminal and seal the side of the interarea of described substrate; And, bump electrode, described bump electrode is installed on the upper surface of the described electrode terminal on the upper surface that is exposed to described first resin bed, wherein: slit portion is formed on the back side of described substrate, and the cross section of described slit portion is spill and described slit portion extends in the direction from the described back side to described interarea; And second resin bed, described second resin bed form and cover the described back side continuously and be filled in simultaneously in the described slit portion with the side that intersects at the described back side.
By using the manufacture method of semiconductor device of the present invention, can prevent that particle from adhering to, because when first scribing, connect up again and electrode terminal (metal column) has been used the first resin bed molding.Therefore, do not exist owing to adhering to the adhering possibility that particle causes electrical short or reduces by first resin bed.
When first scribing, the scribing degree of depth be adjusted to from the dorsal part of wafer to wafer interarea or to the centre position of first resin bed, therefore, can make wafer keep carrying out under the sufficiently solid state scribing with first resin bed.Can carry out scribing and not make the line of cut bending, therefore, can guarantee the size of semiconductor device precision.
And, by using method, semi-conductor device manufacturing method of the present invention, when exposing wafer, can when being filled in first scribing, form under the state of line of cut of profile and polish with second resin bed at second resin bed of polishing hermetic sealing substrate dorsal part.Therefore, can polish and the side of substrate is separated with second resin bed, and can design thinner semiconductor device better.
And second resin bed is the side of covered substrate continuously and the resin bed of dorsal part, therefore, can make the edge of second resin bed of covered substrate side be positioned at the interarea side of substrate.Obtain therein by in the step of the semiconductor device of scribing, even at polished die for example under the situation of second resin bed on the substrate dorsal part, also can design thinner semiconductor device, also can not cause from the side the power on the removal direction of second resin bed of covered substrate side.
By using semiconductor manufacturing facility of the present invention, even when removing second resin bed, also can prevent the removal of first resin bed, because second resin bed of covered substrate side does not form continuously with first resin bed of covered substrate interarea.Therefore, can prevent for IC or the damage of wiring again.
The edge of second resin bed on the substrate interarea in first resin bed, therefore, can prevent that moisture from permeating from the boundary between first resin bed and second resin bed than the surface of more close first resin bed of the interarea of substrate and close attachment.And in this case, therefore the top close attachment at the edge of second resin bed, if removed second resin bed from the side of substrate, also can solve the removed problem of first resin bed in first resin bed.
By using described semiconductor device, can provide thinner semiconductor device, because second resin bed of covered substrate is formed on the side of substrate.
The manufacture method of semiconductor device according to the invention, slit portion is formed on the back side of wafer, and the side that second resin-shaped becomes the back side of cover wafers integrally and form profile when first scribing, and fill this slit portion simultaneously, therefore, can between second resin bed and the back side, increase adhered area owing to slit portion, and because the resin portion of slit portion and filling slit portion engages and increases resistance to improve second resin bed, therefore, can reduce the removed possibility of second resin bed.
If second resin bed is removed, also can prevent the removed situation of first resin bed, because second resin bed and first resin bed do not form continuously.Therefore, can prevent for IC, again the wiring etc. damage.
The semiconductor device according to the invention manufacture method, because on the direction that the bearing of trend with the scribing line of cut intersects, print second resin, so can when filling scribing line of cut and slit portion, flow resistance be reduced to reduced levels with second resin, and under the state that flows by extruding, fill scribing line of cut and slit portion, therefore, the second resin inside of filling scribing line of cut and slit portion does not comprise air.That is to say, can fill scribing line of cut and slit portion with second resin with fine and close and dense state, and can make the adhesiveness of second resin bed accurate, therefore, can strengthen semiconductor device reliably.Spend on the direction of the angle of intersection fork of 75 degree and print second resin by be 15 at bearing of trend, can obtain above-mentioned advantage more reliably with the scribing line of cut.
The semiconductor device according to the invention manufacture method by the part of second resin bed on the polished wafer back side, can realize that thinner semiconductor device keeps intensity with first resin bed and second resin bed simultaneously.
The semiconductor device according to the invention manufacture method, the back side and the side of covered substrate are filled in the slit portion simultaneously because second resin bed forms integrally, so can between second resin bed and substrate, have bigger adhered area owing to slit portion also owing to slit portion has bigger resistance to be used to improve second resin bed, therefore, can prevent the removal of second resin bed.If removed second resin bed, can prevent that also first resin bed is removed, because first resin bed of second resin bed of covered substrate side and covered substrate interarea forms continuously, therefore, can prevent for IC, the damage of wiring etc. again.Therefore, can provide semiconductor device with splendid impact resistance and high reliability.
Description of drawings
Fig. 1 is the profile according to the semiconductor device of first embodiment of the invention;
Fig. 2 shows in process for fabrication of semiconductor device shown in Figure 1, is formed with the state that wiring again waited and be formed with the wafer of first resin bed on it;
Fig. 3 shows the state of the process for fabrication of semiconductor device of Fig. 1, wherein carries out first scribing;
Fig. 4 shows the state of the process for fabrication of semiconductor device of Fig. 1, wherein seals with second resin bed;
Fig. 5 shows the state of the process for fabrication of semiconductor device of Fig. 1, bump electrode wherein is set and adheres to the scribing band;
Fig. 6 shows the state of the process for fabrication of semiconductor device of Fig. 1, wherein carries out second scribing;
Fig. 7 is the profile according to the semiconductor device of second embodiment of the invention;
Fig. 8 shows the state of the process for fabrication of semiconductor device of Fig. 7, wherein removes second resin bed on the chip back surface;
Fig. 9 shows the state of the process for fabrication of semiconductor device of Fig. 7, bump electrode wherein is set and adheres to the scribing band;
Figure 10 shows the state of the process for fabrication of semiconductor device of Fig. 7, wherein carries out second scribing;
Figure 11 is the profile of conventional semiconductor device;
Figure 12 shows the state of the process for fabrication of semiconductor device of Figure 11, wherein is formed with wiring again etc. on wafer;
Figure 13 shows the state of the process for fabrication of semiconductor device of Figure 11, wherein forms first resin bed;
Figure 14 shows the state of the process for fabrication of semiconductor device of Figure 11, wherein carries out second scribing;
Figure 15 is the profile according to the semiconductor device of third embodiment of the invention;
Figure 16 shows the state of the process for fabrication of semiconductor device of Figure 15, wherein is formed with wiring again etc. on wafer;
Figure 17 shows the state of the process for fabrication of semiconductor device of Figure 15, has wherein formed first resin bed;
Figure 18 shows the state of the process for fabrication of semiconductor device of Figure 15, and the surperficial polished and electrode terminal of first resin bed wherein shown in Figure 17 is exposed;
Figure 19 shows the state of the process for fabrication of semiconductor device of Figure 15, has wherein formed scribing line of cut and slit portion;
Figure 20 shows the state of the process for fabrication of semiconductor device of Figure 15, wherein uses second resin-sealed;
Figure 21 shows the state of the process for fabrication of semiconductor device of Figure 15, bump electrode wherein is set and adheres to the scribing band;
Figure 22 shows the state of the process for fabrication of semiconductor device of Figure 15, wherein carries out second scribing;
Figure 23 is the figure that is illustrated in the state before the printing direction that is used to print second resin that wafer is adjusted to;
Figure 24 is the end view of Figure 23;
Figure 25 is the figure that is illustrated in the state after the printing direction that is used to print second resin that wafer is adjusted to;
Figure 26 is the end view of Figure 25.
Figure 27 shows the cross-sectional view of variation example of the semiconductor device of one embodiment of the invention.
Figure 28 shows the state in the wafer fabrication steps of Figure 27, wherein adheres to radiant panel before second scribing.
Figure 29 shows the state in the wafer fabrication steps of Figure 27, wherein adheres to the radiant panel and the scribing band of scribing before second scribing.
Figure 30 shows in manufacturing step it is carried out the surface-treated semiconductor device.
Figure 31 shows in manufacturing step it is carried out the surface-treated semiconductor device.
Figure 32 shows in manufacturing step it is carried out the surface-treated semiconductor device.
Embodiment
Following with reference to accompanying drawing, semiconductor device B and manufacture method thereof according to first embodiment of the invention are described.Semiconductor device B described in this embodiment is mounted and is used for for example device of mobile terminal device, and particularly, it is relevant with the WL-CSP of resin mouldings to connect up with the processed wafer level again.
As shown in Figure 1, semiconductor device according to the invention B comprises: substrate 1 (wafer after the scribing), and it is stacked and has integrated circuit 4 on interarea 1c; Be electrically connected to the wiring again 6 of integrated circuit 4 via pad electrode 5; Be formed on the columnar electrode terminal (metal column) 7 that connects up again on 6; First resin bed 2, thickness is from the interarea 1c of the interarea 1c of substrate 1 7a and hermetic sealing substrate 1 above electrode terminal 7; Bump electrode 11 (salient point), be installed on the upper surface 7a of the electrode terminal 7 on the surperficial 2a that is exposed to first resin bed 2. on the side of substrate 1 1a and back side 1b, be formed with second resin bed 3 with among continuous covering side 1a and the back side 1b each. in addition, the edge 3a of second resin bed 3 by interarea 1c is positioned at the scope of the thickness Z of first resin bed, and closely is attached to first resin bed 2. in the edge surface 3b and the side on substrate 1 next door
Below, referring to figs. 1 through Fig. 6, the manufacturing process of the semiconductor device B with said structure is described.
At first, as shown in Figure 2, prepare rectangular wafer 1, on its interarea 1c, form integrated circuit 4, and form be connected to pad electrode 5 connect up 6 and again at the cylindrical metal post 7 that connects up again on 6.By resin-sealedly connecting up 6 and cylindrical metal post 7 again with first, formed first resin bed 2.And first resin bed 2 forms by this way, that is, the top 7a of cylindrical metal post 7 is embedded into, and after polish the surperficial 2a of first resin bed 2, therefore, on the surperficial 2a of first resin bed 2, exposed the upper surface of cylindrical metal post 7.
As shown in Figure 3, after upset wafer 1, utilize for example thin sword emery wheel (grinding stone) that is selected to be fit to semiconductor device B size to carry out first scribing from back side 1b.In this technology, determine scribing degree of depth T3, be centre position, and in this first scribing, form the profile of line of cut 10 from the back side 1b of wafer 1 to first resin bed 2.When finishing first scribing, on interarea 1c, have integrated circuit 4 and 6 the wafer 1 that connects up again keeps enough thickness keeping intensity, and this wafer 1 is a unit, that is, it is not also scratched.Therefore, when first scribing, can cut and draw but do not cut wafer 1, and can be contemplated that the bending that does not have line of cut.
As shown in Figure 4, form second resin bed 3, and seal the back side 1b of wafers with second resin bed 3 by filling the line of cut that forms profile with second resin.
When solidifying second resin, after the wafer 1 that overturns once more, as shown in Figure 5, by polishing the surperficial 2a side of first resin bed 2, the top 7a that forms cylindrical metal post 7 makes on its surperficial 2a that is exposed to first resin bed 2, salient point 11 is installed being positioned on the upper surface 7a of an identical lip-deep cylindrical metal post 7, and on the outside 3d of second resin bed 3 of the back side 1b of sealing wafer 1, is adhered to scribing band 8 with surperficial 2a.
As shown in Figure 6, after having prepared than the thinner thin sword emery wheel of the thin sword emery wheel of the profile that is used to form line of cut 10, second scribing is carried out at the center of the Width of line of cut 10 on the surperficial 2a of first resin bed 2, stays second resin bed 3 on the cutting surface that covers first scribing.In this technology, adjust scribing degree of depth T4 and be from the centre position of scribing band 8, and in this stage, scratch semiconductor device B to the surperficial 2a of first resin bed 2.When second scribing, apply lower pressure to be used for cutting the resin of drawing first resin bed and second resin bed.Therefore, wafer 1 is not had the bending of line of cut by under the state of scribing band 8 supports when carrying out scribing therein.
At last, thus stretching scribing band 8 make its elongation, removed the semiconductor device B under the state that adheres to scribing band 8 and scratched.Thus, finished the manufacturing process of semiconductor device B shown in Figure 1.
In the manufacture method of semiconductor device B, when first scribing, connect up 6 again, cylindrical metal post 7 etc. is by resin moulded and formed first resin bed 2, therefore, can carry out scribing and the ion that produces when not making scribing is attached to and connects up 6 or cylindrical metal post 7 again.Therefore, can prevent the low adhesion of the electrical short or first resin bed 2.
In addition, first scribing of carrying out from the back side 1b of wafer 1 proceeds to the centre position first resin bed 2, therefore, can cut and draw but do not cut wafer 1.Therefore, can prevent bendings such as line of cut and can keep the dimensional accuracy of semiconductor device B.And second scribing is to cut the resin of drawing first resin bed 2 and second resin bed 3, therefore, can be under the state that wafer 1 is supported by scribing band 8 scribing and do not cause the bending of line of cut.
According to above-mentioned semiconductor device B, form the side 1a of covered substrate 1 and second resin bed 3 of back side 1b continuously, yet, covering second resin bed 3 of side 1a and first resin bed 2 of covering interarea 1c forms discontinuously, therefore, even the removal of second resin bed 3 of covering side 1a occurs, also can avoid the removal of first resin bed 2.
Close attachment is positioned at scope than the thickness Z of first resin bed 2 of the surperficial 2a of more close first resin bed 2 of interarea 1c of substrate 1 in the edge 3a of second resin bed 3 of first resin bed 2, and the edge surface 3b of the edge 3a of second resin bed 3 and the side 3c of substrate 1 closely adhere to, therefore, can prevent that moisture is from boundary penetration, even and second resin bed 3 that take place to cover side 1a also can be avoided the removal of first resin bed 2 when being removed.
Therefore, manufacture method and semiconductor device B about above-mentioned semiconductor device B can provide the B of the semiconductor device with high reliability, prevent simultaneously for integrated circuit 4 and 6 the damage of connecting up again because can realize higher intensity in substrate 1.
Although below described and illustrated the first embodiment of the present invention, it should be understood that these should not be considered to restrictive.Under the prerequisite that does not depart from the subject or scope of the present invention, can add, omit, replace and other modifications.For example, in first embodiment, second resin bed 3 is described to the epoxy resin identical with the resin of first resin bed 2, yet, this two-layer resin can have different characteristics, such as different filer contents, perhaps can be the resin different with epoxy resin.In explanation, the scribing degree of depth T3 of first scribing is described to the centre position of first resin bed 2, yet, the scribing degree of depth T3 of first scribing can arrive the interarea 1c of wafer 1, in this case, close attachment only is attached to first resin bed 2 with edge surface 3b in the edge 3a of second resin bed 3 of first resin bed 2.
About the semiconductor device B that makes according to first embodiment, both realize thinner semiconductor device B can be formed on second resin bed 3 on the back side 1b of substrate 1 or second resin bed 3 and substrate 1 by polishing.In this glossing, because second resin bed 3 forms continuously from cutting surface (side) 1a that the back side 1b of substrate 1 forms profile during to first scribing, so the polishing part that for example is used to polish can not contact the interface of close attachment to first resin bed 2 and second resin bed 3.Therefore, there is not the possibility of removing second resin bed 3 that covers side 1a by polishing.
Next, with reference to Fig. 7-10, semiconductor device C and manufacture method thereof in second embodiment of the invention are described.
As first embodiment shown in Fig. 1-6, the second embodiment of the present invention is mounted and is used for for example device of mobile terminal device, and particularly, it is relevant with the WL-CSP of resin mouldings to connect up with the processed wafer level again.In this embodiment, for structure and the manufacture method identical, use identical Reference numeral and omit detailed explanation with the semiconductor device B of first embodiment.
About the semiconductor device C of as shown in Figure 7 second embodiment, different with semiconductor device B described in first embodiment, on the 1b of the back side of substrate 1, do not form second resin bed 3.On the other hand, on the 1a of the side of substrate 1, the side 1a that forms second resin bed 3 and substrate 1 is capped also protected.
Manufacture method with reference to Fig. 2-4 and 7-9 explanation above-mentioned semiconductor device C.
At first, as in first embodiment, as shown in Figure 2, prepare the wafer 1 of first embodiment that is formed with integrated circuit 4 on it, and in the side of the interarea 1c of wafer 1, form be connected to pad electrode 5 connect up 6 and be embedded in cylindrical metal post 7 in first resin bed 2 again.
In next step, as shown in Figure 3, carry out first scribing to the centre position of first resin bed 2 and form the profile of line of cut 10 from the back side 1b of wafer 1.As shown in Figure 4, by filling the line of cut 10 formed profile with second resin bed and, forming second resin bed 3 with the back side 1b of the second resin-sealed wafer 1.
After cured resin, as shown in Figure 8, by second resin bed 3 on the back side 1b of polishing removal wafer 1, and back side 1b. this moment of exposure wafer 1, second resin is filled in the line of cut 10, therefore, adhesion between cut surface (side) 1a and second resin can not be removed by polishing, and adheres to securely. in next step, as shown in Figure 9, salient point 11 is installed on the upper surface 7a of cylindrical metal post 7, and on the 1b of the back side of chip exposed 1, is adhered to scribing band 8.
In next step, carry out second scribing from the surperficial 2a of first resin bed 2, simultaneously as shown in figure 10, make second resin bed 3 be in such state, form the cut surface (the side 1a of substrate 1) of profile during such as first scribing of cover wafers 1.At this moment, scribing degree of depth T5 is set for to the centre position of scribing band 8.At last, by removing scribing band 8, finished the manufacturing of the semiconductor device C after the scribing.
Therefore, manufacture method according to above-mentioned semiconductor device C, can make the line of cut 10 that forms profile in first scribing be in inside by second resin bed 3 on the back side 1b of polished wafer 1 simultaneously and be filled with second state of resin, that semiconductor device C can be designed is thinner.At this moment, second resin solidifies with such state, promptly, it is filled in line of cut 10 inside, therefore, can polish the removal that prevents second resin by cut surface 1a, and can form second resin bed 3 that is tightly adhered on the cut surface 1a from the wafer 1 that forms when first scribing.
The invention is not restricted to above-mentioned second embodiment, within the scope of the invention, can make amendment the present invention.For example, in a second embodiment, second resin bed 3 of the back side 1b of sealing wafer 1 is removed by polishing and exposed backside 1b, yet, this is also unrestricted, can be by polishing second resin bed 3 and keeping its thickness to reduce to design semiconductor device C thinner.In this case, second resin bed 3 is formed on the back side 1b of substrate 1, and therefore, substrate 1 can be firmer and can has impact resistance.And, can be by polishing substrate 1 outside second resin bed 3 on the 1b of the back side of polished wafer 1 self, and design the semiconductor device C of Bao Deduo.
Although below described and illustrated the preferred embodiments of the present invention, it should be understood that these are exemplary embodiment of the present invention, should not be considered to restrictive.Under the prerequisite that does not depart from the subject or scope of the present invention, can add, omit, replace and other modifications.Therefore, the present invention should not be considered to be limited by above description, and the present invention only is limited by the scope of claims.
Below, with reference to Figure 15-26, semiconductor device B and manufacture method thereof about third embodiment of the invention are described.The semiconductor device B of this embodiment is mounted and is used for for example device of mobile terminal device, and particularly, it is relevant with the WL-CSP of resin mouldings to connect up with the processed wafer level again.
As shown in figure 15, semiconductor device B of the present invention comprises: substrate 1 (wafer after the scribing), and it is stacked and has integrated circuit 4 on interarea 1c; Be electrically connected to the wiring again 6 of integrated circuit 4 via pad electrode 5; Be column and be formed on the electrode terminal (metal column) 7 that connects up again on 6; First resin bed 2, its thickness is from the interarea 1c of the interarea 1c of substrate 1 7a and hermetic sealing substrate 1 above electrode terminal 7; Bump electrode 11 (salient point), it is installed on the upper surface 7a of the electrode terminal 7 on the surperficial 2a that is exposed to first resin bed 2.
About this semiconductor device B, the side 1a of substrate 1 (as described below, side 1a forms profile in first scribing) form taper and make the width of substrate 1 narrow down gradually to back side 1b from interarea 1c, and on the 1b of the back side of substrate 1, be formed with slit portion 12, the cross section of this slit portion forms spill and this slit portion extends with rectilinear form, watch on the plane of the back side 1b that faces substrate 1 simultaneously, it is the center on width H1 direction almost.On the side of substrate 1 1a and back side 1b, second resin bed 3 forms and covers side 1a continuously and comprises the back side 1b of the inside of the slit portion 12 that is formed on the 1b of the back side.The width H2 of semiconductor device B forms with identical size on the direction of the back side 3a2 of second resin bed 3 that is parallel to surperficial 2a at the surperficial 2a from first resin bed 2, and therefore, except that salient point 11, it has square cross section.In second resin bed 3, the edge 3b2 that is arranged on the interarea 1c side of substrate 1 is positioned at the scope of the thickness Z 1 of first resin bed 2, and the side 3d of substrate 1 and edge 3c2 close attachment are in first resin bed 2.
Below, with reference to Figure 15-26, the manufacture method of the semiconductor device B with said structure is described.
At first, as shown in figure 16, preparation wafer 1, this wafer is plate-like and is formed with integrated circuit 4 on its interarea, and form be connected to pad electrode 5 connect up 6 and again at the cylindrical metal post 7 that connects up again on 6.In this case, connect up again 6 etched when forming.As shown in figure 17, resin-sealedly connect up 6 and cylindrical metal post 7 again with first, and first resin bed 2 forms by this way, that is, (surface) 2a is parallel to the interarea 1c of wafer 1 above it.In this step, the surperficial 2a of first resin bed 2 is positioned on the top 7a of cylindrical metal post 7, and cylindrical metal post 7 is in the state that is embedded in fully in first resin bed 2.As shown in figure 18, the surperficial 2a side of first resin bed 2 is polished to make surperficial 2a keep parallel with the interarea 1c of wafer 1 simultaneously, and the top 7a of cylindrical metal post 7 is exposed on the surperficial 2a of first resin bed 2.
Then, as shown in figure 19,, and use for example according to being carried out first scribing from back side 1b side by the thin sword emery wheel of the size of the semiconductor device B of scribing with wafer 1 upset.In this step, scribing degree of depth T3 be from the back side of wafer 1 to the centre position of first resin bed 2, and in this first scribing, formed the profile of scribing line of cut 10.For example by make the thin sword emery wheel of annular cut the back side 1b of wafer 1 simultaneously with high speed rotating and make emery wheel with the direction of rotation quadrature on move, form the profile of scribing line of cut 10, linearly shape extension when it is watched on the plane of the back side 1b that faces wafer 1.Have the thin sword emery wheel of annular of the abrasive grain layer that the thickness size increases to inside gradually from the periphery by use, make side 1a form taper, wherein the back side 1b of width H3 from the surperficial 2a of first resin bed 2 to wafer 1 increases gradually.In this case, in the step of finishing first scribing, first resin bed 2 is not cut fully but keeps enough thickness to keep intensity, therefore, on interarea 1c, has integrated circuit 4 and 6 the wafer 1 of connecting up is again supported by first resin bed 2 as a unit, that is to say that wafer 1 is not scratched as yet.Therefore, when first scribing, can cut and draw but do not cut wafer 1, can be contemplated that the bending that does not have line of cut.
In the step of finishing first scribing, for example, draw by using for example thin sword emery wheel to cut, and the profile that forms slit portion 12 make its almost in the centre of adjacent scribing line of cut 10 and the direction (from the time linearly the shape direction of extending) that makes slit portion 12 be parallel to scribing line of cut 10 in the face of the viewed in plan of the back side 1b of wafer 1 extend.In this case, slit portion 12 extends and forms the degree of depth (the scribing degree of depth) degree of depth that T3 is more shallow that has than the scribing line of cut that extends to interarea 1c from back side 1b to interarea 1c from the back side 1b of wafer 1.In this step, slit portion 12 is not limited to form by using thin sword emery wheel to cut to draw, and it can be cut by for example sandblast, laser and draw, etching waits and forms.
As shown in figure 20, keep certain height and print second resin by for example making stage body (stage) on interarea 1c, move simultaneously interarea 1c with wafer 1, fill scribing line of cut 10 and slit portion 12 that forms profile and the back side 1b side that seals wafer 1 with second resin, form second resin bed 3. in this step, shown in Figure 23 and 24, if on direction (direction of arrow b and arrow c) quadrature that extends with scribing line of cut 10 and slit portion 12 or parallel direction, print second resin (situation about on the direction of arrow a, printing), when entering into the inside of scribing line of cut 10 and slit portion 12, second resin comprises air easily. therefore, in the present embodiment, when printing second resin, by change the position of wafer 1 with the anglec of rotation rotation wafer 1 of 45 degree around axes O 1 according to breach 13 (detecting the mark of wafer 1 position), described breach 13 has the V-arrangement cross section and is arranged on the side of circumference 1d of disc shaped wafer 1, as shown in figure 23. Figure 25 and 26 shows the state that rotates wafer 1 by this way, in the present embodiment, with the bearing of trend of scribing line of cut 10 and slit portion 12 direction with for example angle of intersection of 45 degree on print second resin. therefore, second resin is under the state that flow resistance is decreased to reduced levels and flow in scribing line of cut 10 and the slit portion 12 under the state that flows and filling by pushing, and inside does not comprise air. in this case, when printing second resin, printing direction should intersect with the bearing of trend of scribing line of cut 10, therefore, it can be for example to spend to 75 degree from 15, and according to filling scribing line of cut 10 and slit portion 12 comparably, it is preferably 45 degree. and in this technology, wafer 1 rotates with respective angles.
When solidifying second resin, with wafer 1 upset, as shown in figure 21, salient point 11 is installed on the 7a above the cylindrical metal post 7 on the surperficial 2a that is exposed to first resin bed 2, and with on the back side 3a2 of scribing band 8 attached to second resin bed 3 of the back side 1b of sealing wafer 1.
As shown in figure 22, prepare the thin sword emery wheel thinner than the thin sword emery wheel of the profile that is used to form scribing line of cut 10, and the core on the width H3 of scribing line of cut 10 direction carries out second scribing from the surperficial 2a side of first resin bed 2, makes second resin bed 3 remain on the state of the cut surface 1a (the side 1a of substrate 1) that covers first scribing simultaneously.The centre position of scribing degree of depth T4 from the surperficial 2a of first resin bed 2 to scribing band 8, and in this step, cut semiconductor device B.When second scribing, it is less to be used to cut the broaching load (cutting load) of drawing first resin bed 2 and second resin bed 3.Therefore, if under with the state of scribing band 8 supporting wafers 1, carry out scribing, can prevent the bending of line of cut.
At last, thereby stretching scribing band 8 makes its elongation, has removed adhering to scribing band 8 and cut semiconductor device B under the state of drawing.Finished the manufacturing process of semiconductor device B shown in Figure 15.
Therefore, according to above-mentioned semiconductor device B and manufacture method thereof, go up formation slit portion 12 by back side 1b at substrate 1 (wafer after the scribing), and form second resin bed 3 and simultaneously second resin is filled in the slit portion 12, can increase adhered area and resistance to be used to improve second resin bed 3, therefore, the substrate 1 and second resin bed 3 can be adhered to securely, and can reduce to remove the possibility of second resin bed 3.Compare with the conventional semiconductor device A that the back side 1b quadrature of substrate 1 intersects with side 1a wherein, form taper, can increase adhered area, therefore, can reduce to remove the possibility of second resin bed 3 by side 1a with substrate 1.
When printing second resin, the angles that are 45 degree by the bearing of trend with scribing line of cut 10 and slit portion 12 are printed, can be by pushing under the mobile state potting resin and flow resistance can being reduced to more low-level.That is to say, when filling second resin, can prevent that air from comprising to come in and can be fine and close and form second resin bed 3 densely, therefore, can strengthen substrate 1 reliably.
The invention is not restricted to above-mentioned the 3rd embodiment, can make amendment to it within the scope of the invention. for example, in the present embodiment, after forming first resin bed 2, carry out the formation of first scribing and slit portion 12, yet, it can resin-sealedly connect up 6 and cylindrical metal post 7 again with first, polish first resin bed 2 to expose the top 7a of cylindrical metal post 7, perhaps on cylindrical metal post 7, install before any one stage in the salient point 11. when printing second resin, illustrated that the bearing of trend of printing direction and scribing line of cut 10 and slit portion 12 is with 45 angle of intersection of spending, yet also can for example be 15 degree to 75 degree with described bearing of trend prints, and also can obtain identical advantage in this case. illustrated that the scribing line of cut is extending with rectilinear form when watching in the face of the plane of the back side 1b of wafer 1, yet it also can extend by curve shape.
In the present embodiment, illustrated that slit portion 12 has square-section and central authorities between adjacent scribing line of cut 10 almost, and the direction that is parallel to scribing line of cut 10 extends, yet, slit portion 12 is not limited to have square cross section, and can have the shape of curve.In addition, its direction that is not limited to almost the central authorities between adjacent scribing line of cut 10 and is parallel to scribing line of cut 10 is extended.Therefore, except forming the spill on the 1b of the back side of substrate 1, slit portion 12 is not restriction on its shape or its position.In addition, in the present embodiment, the side 1a of substrate 1 that is formed profile by scribing line of cut 10 is tapered, yet, do not need the shape of the side 1a (when first scribing, forming the side of profile) of restricting substrate 1.In addition, in the present embodiment, slit portion 12 is shape linearly, yet equally preferably, for example, it is multiple rectilinear form, and is set up and forms by every line and divide scribing line of cut 10 equably.
And, illustrated that second resin bed 3 is the epoxy resin identical with first resin bed 2, yet this two layers of resin can have different characteristics, different filer content for example, perhaps can be the resin different with epoxy resin.And, the scribing degree of depth T3 that has described first scribing is the centre position to first resin bed 2, yet, the scribing degree of depth T3 of first scribing can arrive the interarea 1c of wafer 1, in this case, close attachment only is attached to first resin bed 2 with edge surface 3c2 in the edge 3b2 of second resin bed 3 of first resin bed 2.Make under state of its back side 1b that is in sealing wafer 1 when equally preferably, polishing is formed on second resin bed 3 on the back side 1b of wafer 1.In this case, the thickness Z 4 of second resin bed 3 shown in Figure 19 reduces, and can design thinner semiconductor device B, increases the intensity of the back side 1b of the wafer 1 with second resin bed 3 simultaneously.
In the above-described embodiments, illustrated after forming scribing line of cut 10 and printed second resin bed 3.But after forming scribing line of cut 10 inner surface of the back side 1b of wafer 1 and/or scribing line of cut 10 being carried out surface treatment is suitable (seeing Figure 30).Should be noted that, in Figure 30-32,, be depicted as the surface after handling coarse for the ease of understanding.The roughness on the surface after handling in these figure is not accurately to be actual roughness.By carrying out such surface treatment, can increase the adhesiveness between first resin bed 2 and second resin bed 3, even omitted slit part 12.
In this surface treatment, can by will with grinding agent (for example, sand, glass powder, metal fillings, plastics bits etc.) moisture that mixes mutually is discharged into the back side 1b of wafer 1 with coarse its surface, and, increase adhesiveness with second resin bed by surface roughness Ra (arithmetic average roughness) is adjusted to 10-100 μ m.
Only the inner surface 1d of slit part 12 being carried out surface treatment is suitable (seeing Figure 31), and this has increased the adhesiveness to second resin bed 3.
Only the surperficial 1e in slit part 12 same positions being carried out surface treatment is suitable (seeing Figure 32), even when slit part 12 does not form.This has increased the adhesiveness of second resin bed 3.
By discharged air, water or empty G﹠W the two to carry out surface treatment be suitable.But, when not having water to carry out surface treatment by discharged air, so owing to use plastics to have the possibility that produces static, therefore preferred other grinding agent that uses.
And, in the above-described embodiments, the back side 3a of second resin bed 3 has formed the outer surface (upper surface) of semiconductor device B, but, for example shown in Figure 27, the upper surface that provides the outer surface of radiant panel (metal level) 20 and this radiant panel 20 to form semiconductor device B at (on second resin bed 3) on the back side 3a of second resin bed 3 is suitable. in this situation, as shown in figure 28, form after second resin bed 2, radiant panel 20 sticks on the back side 3a of second resin bed 3 by binding agent 21. and this radiant panel 20 for example can be by copper (Cu), aluminium (Al), titanium (Ti), nickel (Ni) etc. is made, thickness is at the metallic plate of 50 to 500 μ m, if and use Cu plate, it is suitable applying so that Ni prevents to corrode. recommend to use and make the grinding agent that has mixed the heat conduction additive by silicon or epoxy resin, this heat conduction additive is such as being powder silver (Ag), the metal dust of powder Cu or powder Ni or silicon dioxide (SiO
2).
Suitable is, and this binding agent 21 is to use as the liquid-containing binder of the thickness printing of 20-500 μ m or the sheet form adhesive of same thickness, and its by heating and/or press quenching so that radiant panel 20 is adhered to mutually with second resin bed 3.
And, as shown in figure 29, the radiant panel 20 of prior deicing (deiced) is adhered on the back side 3a of second resin bed 3.,, scribing band 8 is fixed on the outer surface of radiant panel 20 when adhering to radiant panel 20 through the situation that binding agent 21 is provided with at above-mentioned radiant panel 20, following step is same as the previously described embodiments.In this situation, make the centre position of scribing degree of depth T4 from the surperficial 2a of first resin bed 2 to scribing band 8, scribing degree of depth T4 need be increased to identical with radiant panel 20.
As mentioned above, be formed with the semiconductor device B of the scribing of the radiant panel 20 on outer surface (upper surface), so the heat radiation of semiconductor device 20 can be arrived the outside, i.e. the semiconductor device B of radiance excellence, and preparation high reliability.
The application requires the Japanese patent application No.2005-074902 that submits on March 16th, 2005 and the priority of the Japanese patent application No.2005-145610 that submits on May 18th, 2005, and its full content is hereby incorporated by.
Claims (13)
1. method, semi-conductor device manufacturing method may further comprise the steps:
The preparation wafer is formed with a plurality of integrated circuits on the interarea of this wafer;
Formation is electrically connected to the wiring again of described integrated circuit via pad electrode;
Form electrode terminal in the wiring again described;
Form first resin bed by wiring again and the electrode terminal that seals at least with first resin on the interarea that is formed on described wafer;
After forming described first resin bed, carry out first scribing to the interarea of described wafer or from the back side one side of described wafer to the centre position of described first resin bed from the back side one side of described wafer;
Form the line of cut of profile when being sealed in described first scribing continuously with second resin and the back side of described wafer forms second resin bed; And
Carry out second scribing, form second resin bed of the side of profile when keep covering described first scribing simultaneously.
2. method, semi-conductor device manufacturing method according to claim 1, further comprising the steps of:
Second resin bed at the back side of the described wafer of polishing sealing is to expose described wafer.
3. method, semi-conductor device manufacturing method according to claim 1 also comprises step:
The adhesiving metal plate is to the back side of second resin bed after forming described second resin bed and before described second scribing.
4. method, semi-conductor device manufacturing method according to claim 1 also comprises step:
Before described first scribing, the interarea of described wafer and upper surface of described first resin bed one or both of are carried out roughening.
5. semiconductor device comprises:
Substrate, described substrate is included in the integrated circuit on the interarea;
Be electrically connected to the wiring again of described integrated circuit via electrode pad;
Be formed on the electrode terminal in the described wiring again;
First resin bed, described first resin bed have the thickness from the interarea of described substrate to the upper surface of described electrode terminal and seal the side of the interarea of described substrate;
Bump electrode, described bump electrode are installed on the upper surface of the described electrode terminal on the upper surface that is exposed to described first resin bed; And
Second resin bed, described second resin bed cover continuously described substrate the back side and with the direction of described back side quadrature on the side.
6. semiconductor device according to claim 5, wherein:
The edge of described second resin bed on the side of described substrate is configured to the upper surface than more close described first resin bed of interarea of described substrate, and close attachment is in described first resin bed.
7. semiconductor device comprises:
Substrate, described substrate is included in the integrated circuit on the interarea;
Be electrically connected to the wiring again of described integrated circuit via electrode pad;
Be formed on the electrode terminal in the described wiring again;
First resin bed, described first resin bed have the thickness from the interarea of described substrate to the upper surface of described electrode terminal and seal the side of the interarea of described substrate;
Bump electrode, described bump electrode are installed on the upper surface of the described electrode terminal on the upper surface that is exposed to described first resin bed; And
Second resin bed, described second resin bed covers the side of described substrate.
8. method, semi-conductor device manufacturing method may further comprise the steps:
The preparation wafer is formed with a plurality of integrated circuits on the interarea of this wafer;
Formation is electrically connected to the wiring again of described integrated circuit via pad electrode;
Form electrode terminal in the wiring again described;
Form first resin bed, seal the wiring again and the electrode terminal that form on the interarea of this wafer at least;
By after forming described first resin bed, carrying out first scribing to the interarea of described wafer or from the back side of described wafer to the centre position of described first resin bed, form the scribing line of cut from the back side of described wafer;
On the back side of this wafer, form slit portion, the cross section of described slit portion is spill, and, described slit portion the direction from the described back side to described interarea extend and its degree of depth less than the degree of depth at the upwardly extending described scribing line of cut in the side from the described back side to described interarea;
Form the line of cut of profile when being sealed in described first scribing continuously with second resin and the back side of described wafer forms second resin bed; And
Carry out second scribing, form second resin bed of the side of profile when keep covering described first scribing simultaneously.
9. method, semi-conductor device manufacturing method according to claim 8, wherein:
Carry out described first scribing in the following manner, wherein when watching in the face of the plane at the described back side, described scribing line of cut linearly shape extends; And
When forming described second resin bed, on the direction that the direction of extending with described scribing line of cut intersects, print described second resin.
10. method, semi-conductor device manufacturing method according to claim 9, wherein:
To the direction of the angle of intersection fork of 75 degree, printing described second resin with 15 degree with the bearing of trend of described scribing line of cut.
11. method, semi-conductor device manufacturing method according to claim 8, wherein:
Polish described second resin bed, described second resin bed is retained on the back side of described wafer with the state at the back side that seals described wafer.
12. a method, semi-conductor device manufacturing method may further comprise the steps:
The preparation wafer is formed with a plurality of integrated circuits on the interarea of this wafer;
Formation is electrically connected to the wiring again of described integrated circuit via pad electrode;
After in described wiring again, forming electrode terminal, embed under first state of resin with first resin at described wiring again and electrode terminal and to seal described the wiring again and described electrode terminal on the interarea that is formed on described wafer at least;
Form after first resin bed, polish described first resin to expose described electrode terminal;
On the described electrode terminal that exposes, bump electrode is installed, so that described semiconductor device is connected to the outside; And
Cut and draw described wafer, may further comprise the steps:
By with the described first resin-sealed described wiring again with during described electrode terminal, forming described first resin bed after or be on the described electrode terminal after the described bump electrode of installation, from the back side of described wafer to the interarea of described wafer or carry out first scribing from the back side of described wafer to the centre position of described first resin bed and form the scribing line of cut;
On the back side of this wafer, form slit portion, the cross section of described slit portion is spill, and, described slit portion the direction from the described back side to described interarea extend and its degree of depth less than the degree of depth of the upwardly extending scribing line of cut in the side from the described back side to described interarea;
Form the line of cut of profile when being sealed in described first scribing continuously with second resin and the back side of described wafer forms second resin bed; And
Carry out second scribing, form second resin bed of the side of profile when keep covering described first scribing simultaneously.
13. a semiconductor device comprises:
Integrated circuit on the interarea of substrate;
Be electrically connected to the wiring again of described integrated circuit via pad electrode;
First resin bed, described first resin bed have the thickness from the interarea of described substrate to the described upper surface of wiring again and seal the side of the interarea of described substrate; And
Bump electrode, described bump electrode are installed on the upper surface of the described electrode terminal on the upper surface that is exposed to described first resin bed, wherein:
Slit portion is formed on the back side of described substrate, and the cross section of described slit portion is spill and described slit portion extends in the direction from the described back side to described interarea; And
Second resin bed, described second resin bed form the back side that covers described substrate continuously and the side of intersecting with the described back side, and are filled in simultaneously in the described slit portion.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP074902/05 | 2005-03-16 | ||
| JP2005074902A JP4103896B2 (en) | 2005-03-16 | 2005-03-16 | Semiconductor device manufacturing method and semiconductor device |
| JP2005145610 | 2005-05-18 | ||
| JP145610/05 | 2005-05-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1835196A CN1835196A (en) | 2006-09-20 |
| CN1835196B true CN1835196B (en) | 2010-05-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006100718370A Expired - Fee Related CN1835196B (en) | 2005-03-16 | 2006-03-16 | Method for manufacturing semiconductor device and semiconductor device |
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| JP (1) | JP4103896B2 (en) |
| CN (1) | CN1835196B (en) |
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| JP5437626B2 (en) * | 2007-12-28 | 2014-03-12 | 株式会社半導体エネルギー研究所 | Semiconductor device and manufacturing method of semiconductor device |
| JP5004907B2 (en) * | 2008-09-03 | 2012-08-22 | 株式会社テラミクロス | Manufacturing method of semiconductor device |
| CN102104011B (en) * | 2009-12-16 | 2013-03-20 | 精材科技股份有限公司 | Electronic element packager and manufacturing method thereof |
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| JP2003309228A (en) * | 2002-04-18 | 2003-10-31 | Oki Electric Ind Co Ltd | Semiconductor device and manufacturing method therefor |
| JP2005175327A (en) * | 2003-12-15 | 2005-06-30 | Matsushita Electric Ind Co Ltd | Semiconductor device, and manufacturing method thereof |
| JP2006196701A (en) * | 2005-01-13 | 2006-07-27 | Oki Electric Ind Co Ltd | Manufacturing method for semiconductor device |
-
2005
- 2005-03-16 JP JP2005074902A patent/JP4103896B2/en not_active Expired - Fee Related
-
2006
- 2006-03-16 CN CN2006100718370A patent/CN1835196B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6607970B1 (en) * | 1999-11-11 | 2003-08-19 | Casio Computer Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6603191B2 (en) * | 2000-05-18 | 2003-08-05 | Casio Computer Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US6534386B2 (en) * | 2001-06-26 | 2003-03-18 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor chips |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4103896B2 (en) | 2008-06-18 |
| CN1835196A (en) | 2006-09-20 |
| JP2006261299A (en) | 2006-09-28 |
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