CN1838323A - 可预防固定模式编程的方法 - Google Patents
可预防固定模式编程的方法 Download PDFInfo
- Publication number
- CN1838323A CN1838323A CNA2006100059975A CN200610005997A CN1838323A CN 1838323 A CN1838323 A CN 1838323A CN A2006100059975 A CNA2006100059975 A CN A2006100059975A CN 200610005997 A CN200610005997 A CN 200610005997A CN 1838323 A CN1838323 A CN 1838323A
- Authority
- CN
- China
- Prior art keywords
- data
- disturbance
- programming
- periodic
- unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/14—Protection against unauthorised use of memory or access to memory
- G06F12/1408—Protection against unauthorised use of memory or access to memory by using cryptography
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
- G11C11/5635—Erasing circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
- G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
- G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously
Abstract
一种可预防固定模式编程的方法,该方法包括将数据编程入存储器阵列中存储器单元的一种模式,并通过周期性扰动数据以预防固定程式编程,因此数据就被存储在存储器阵列中存储器单元的不同模式里。
Description
技术领域
本发明涉及操作非易失存储器(NVM)阵列中的存储器单元,如编程和擦除,尤其涉及一种方法可预防在对单元历史记录编程和擦除时造成的巨大差动,如由于数据扰动引起的。
背景技术
现在的非易失存储器产品都具有对存储器单元进行电子编程和擦除功能。在多数情形下,如通常的编程操作中一样,擦除操作是对一子集单元进行,而非一个单元一个单元的进行。这就意味着直到最后(最慢)一个单元完成擦除,包括单元完成了预定水平的确认(擦除校验),擦除条件才适用于该子集单元。
如图1所示,与氮化物只读存储器(NROM,nitride read-only memory)技术一样,由于在擦除时集成了隧道增强热孔注入,存储器产品要求晶体管结的高偏压通过带到带的隧道效应以产生注入孔。电荷注入必须得到控制以确保恰当的设备操作,因此步进和校验算法常被采用。在典型的算法中,在一定偏压的电荷注入后,是一校验操作以确认单元是否已达标。如仍未达标,就需要在更高的偏压下进行更强的电荷注入,反之亦然。
图2所示是现有技术中一个典型的擦除算法流程图,可用于NROM设备。
擦除脉冲可选择以擦除单元比特,包括选择(拨入)负栅压(Vg or Vcvpn-来自电荷泵的电压)及正漏压(Vppd)(步骤201);擦除脉冲然后作用于单元集合上的比特(步骤202);在擦除校验步骤(步骤203)中读取单元的阈电压以检查存储器单元的阈电压是否已降低至擦除校验(EV)电压水平。
如果没有单元通过擦除校验(EV),就设定(拨入)一个新的正漏压Vppd,新漏压有强增加(如巨大)(步骤204);如果有单元通过擦除校验(EV),就设定一个新的正漏压Vppd,新的正漏压弱增强(如相对小)(步骤205);在擦除脉冲作用于所有单元前,持续以上步骤。每个子群可接收额外脉冲以提高可靠性,额外脉冲比最终达到完全擦除的上一脉冲电平更高。附加脉冲的应用在不同的专利文献中有涉及,比如美国专利6,700,818及美国专利申请20050117395和20050058005,这些都已转让给本申请的现受让人,上述文献公开的内容在本申请中会引用。
为改善热孔注入的隧道效应,图2所示的步骤通常必须在存储器单元的两侧独立实施,其结果是更长的擦除时间和更低的执行效率。
由于存储在子集单元里的数据本质上更可能是随机的,在擦除操作前有些单元处于编程状态而有些处于擦除状态。因此,如果不采取特别措施,很可能先前的已编程单元(在上面已执行了擦除操作)会接近阈电压水平或达到擦除校验水平,而没有被编程的单元会由于阈电压显著低于擦除校验水平被过分擦除。这可在图3中看到,图中表明现有技术中在原始状态的、在未有任何操作前的及擦除后的(只有一个子群是预先编程的)子集单元的阈电压分布。被擦除的单元分布有两个峰值,高峰值出现在先前编程单元上的阈电压,而低峰值是出现在未编程单元,即被过分擦除的单元上的阈电压。
过分擦除的情况引发了一些问题。过分擦除的单元可能会变漏,即在未加偏压时会引导电流到“开”的状态(金属氧化物半导体场效应晶体管型的存储器单元的正栅压);被过分擦除的单元可能会变的很难编程,即需要额外电压及时间使之进入编程状态(超过预先设定的水平,编程校验水平)。在操作环境(编程和擦除)中的实际误差可能会在被过分擦除的单元和未被过分擦除的单元间扩大。这些影响总和会最终导致存储器设备的故障,也就是失去数据的完整性。
参见图4,所示为现有技术中存储器阵列中的子群单元的阈电压分布,存储器阵列按固定模式的大循环(105循环)和检测板后续编程。由于缺少足够的预防过分擦除的措施,图中显示了已形成的散乱模式。
现有技术中预防单元过分擦除包括分隔擦除子群,该方法优点在于在较小的擦除子群时可保证更好的擦除一致性。然而其缺点是额外的时间开销(降低性能)和设计复杂。另一项涉及擦除前的编程的现有技术中的方法,可以确保单元在没被编程时不会经常地被擦除;然而这会带来实际操作中时间和能量的损失。
另一项涉及擦除前的编程的现有技术中的方法,可以确保单元在超出设定电平之上时不会被过分擦除;然而这同样会带来实际操作中时间和能量的损失。
发明内容
本发明是要提供一种可预防固定模式编程的方法,可预防在对存储器陈列中单元历史记录编程和擦除时造成的巨大差动,如下详述。本发明如下详述的部分涉及NVM阵列的存储器单元,特别涉及单比特、双比特、多比特和多电平NROM单元。但需强调,本发明不局限于NROM阵列。
按本发明一种可预防固定模式编程的方法的具体实施例所述,本发明方法包括将数据编程入存储器阵列中存储器单元的一种模式里,并通过周期性扰动数据以预防固定程式编程,因此数据被存储在存储器阵列中存储器单元的不同模式里。
可通过周期性的倒转数据实现数据扰动。另外可同时或者也可选择,通过周期性地对数据物理地址再排列以做到数据扰动。另外可同时或者也可选择,通过在编程中采用混和模式卷积数据并在读操作中展开卷积该数据以做到数据扰动。另外可同时或者也可选择,通过按编程和擦除循环计数器周期性地扰动数据以做到数据扰动。数据可以随机或伪随机地周期性扰动。
按本发明的一个实施例,数据扰动可由存储器阵列内部的存储参数的函数来实现,但不限于此。存储参数可以与数据一起被编程。
另外可同时或者也可选择,数据扰动可由数据的逻辑和/或物理地址函数来实现。
附图说明
下面结合附图对本发明作详细描述:
图1是现有技术中擦除NROM单元的简图,是通过隧道效应增强热孔注入;
图2是现有技术NROM设备中擦除算法的流程简图;
图3是现有技术中存储器阵列子群单元在原始状态、擦除后状态的阈电压分布图,该图中只有一个子集单元被预先编程;
图4是现有技术中存储器阵列子群单元的阈电压分布,存储器阵列按固定模式的大循环(105循环)和检测板后续编程;
图5是本发明一个具体实施例中用来预防固定模式编程的数据扰动编程流程的流程简图;
图6是本发明一个具体实施例中数据扰动应用时读取流程的流程简图。
具体实施方式
参见图5,如图是本发明的一个具体实施例,在一个非易失存储器阵列中用来预防固定模式编程的方法。需指出图5是在数据扰动应用中的编程流程的流程简图,下面进行阐释。
按本发明的一个实施例,在将数据编程入存储器阵列中存储器单元的一种模式里后,通过周期性扰动数据以预防固定程式编程,因此数据被存储在存储器阵列中存储器单元的不同模式里(步骤500)。在本发明的一个非限制性实施例中,实际的物理编程数据每个循环都被强迫改变(步骤501)。由此由于固定模式编程,系统误差可能扩大的比率会被大大减小。实际编程入单元阵列的数据可能是用户输入的操作的结果(步骤502)。这种操作可能会每个循环都不同(步骤503),或者按计数器或预先设定的临界参数周期性改变(步骤504)。这种操作包括,但不限于,对输入的数据进行倒转、移位、转置(矩)阵,或者,混和比特、字、页面、输入数据或擦除子群的任何其他数据子集的内在地址,或者,通过变换混合模式来卷积输入数据。这种变化混和模式可以为每个循环或其他期间:固定的、变化的或随机的(步骤505)。
按本发明的一个未设限实施例,擦除扇区包括一组页面(每张单独编程),输入页面数据根据计数器以及擦除扇区的页面位置而采取随机或伪随机模式进行卷积(步骤506)。由于计数器按每个循环变化,被编程到页面物理地址的实际数据也在变化(步骤507)。而且,即使输入数据对所有页面都是相同的,由于随机或伪随机模式也由擦除扇区的页面位置决定,被编程的实际数据在逐页变化(步骤508)。用于数据扰动和错误检测参数的计数器可在同一流程中被物理编程(步骤509)。如美国专利申请10/695,457(公布号US 20040136236)中所述,讨论了错误检测参数问题,相应的还有PCT申请WO 2005/041108“一种在非易失性存储器阵列中用于读取错误检测的回路和系统方法”,这两件专利都已转让给本发明的受让人。读取错误比率由多种错误比率样本和/或错误检测技术决定,比如奇偶比特、检查和、循环冗余校验及其他多种技术。任何错误检测译码和/或评估技术,无论现知的还是未来发展的,都可能应用于本发明。
参见图6,所示为图5中数据扰动应用时读取操作,是本发明一个具体实施例。数据可靠性不受扰动安排的影响。
在一个不受限具体实施例中,页面可被读取,包括错误检测参数(步骤601)。如果已使用了计数器,算法会评估计数器(步骤602)。然后对已使用的特别模式展开卷积(步骤603),从而获得数据(步骤604)。
尽管本发明是按特别的实施例说明的,但很显然对本领域技术人员而言无需创造性即可有许多选择、变动和变化。因此,本申请包含所有这些选择、变动和变化。
Claims (11)
1、一种可预防固定模式编程的方法,该方法包括:将数据编程入存储器阵列中存储器单元的一种模式里,并通过周期性数据扰动以预防固定程式编程,该数据就被存储在存储器阵列中存储器单元的不同模式中。
2、根据权利要求1所述的方法,该周期性数据扰动包括周期性的倒转数据。
3、根据权利要求1所述的方法,该周期性数据扰动包括周期性地再排列所述数据物理地址。
4、根据权利要求1所述的方法,该周期性数据扰动包括在编程中采用混和模式卷积数据并在读取操作中展开卷积该被卷积数据。
5、根据权利要求1所述的方法,该周期性数据扰动包括按程序和擦除循环计数器周期性数据扰动。
6、根据权利要求1所述的方法,该数据被周期性地随机扰动。
7、根据权利要求1所述的方法,该数据被周期性地伪随机扰动。
8、根据权利要求1所述的方法,该周期性数据扰动包括,该扰动是存储器阵列内的存储参数的函数。
9、根据权利要求8所述的方法,所述存储参数与所述数据一起被编程。
10、根据权利要求1所述的方法,该周期性数据扰动包括,该扰动是所述数据的逻辑地址的函数。
11、根据权利要求1所述的方法,该周期性数据扰动包括,该扰动是所述数据的物理地址的函数。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US64456905P | 2005-01-19 | 2005-01-19 | |
US60/644569 | 2005-01-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1838323A true CN1838323A (zh) | 2006-09-27 |
Family
ID=36143177
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100059975A Pending CN1838323A (zh) | 2005-01-19 | 2006-01-18 | 可预防固定模式编程的方法 |
CNA2006100059960A Pending CN1838328A (zh) | 2005-01-19 | 2006-01-18 | 擦除存储器阵列上存储单元的方法 |
CNA2006100054168A Pending CN1822233A (zh) | 2005-01-19 | 2006-01-19 | 一种擦除一个或多个非易失存储器单元的方法、电路和系统 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2006100059960A Pending CN1838328A (zh) | 2005-01-19 | 2006-01-18 | 擦除存储器阵列上存储单元的方法 |
CNA2006100054168A Pending CN1822233A (zh) | 2005-01-19 | 2006-01-19 | 一种擦除一个或多个非易失存储器单元的方法、电路和系统 |
Country Status (4)
Country | Link |
---|---|
US (3) | US7468926B2 (zh) |
EP (3) | EP1684308A1 (zh) |
JP (3) | JP2006228407A (zh) |
CN (3) | CN1838323A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101562043B (zh) * | 2008-04-15 | 2013-12-11 | 三星电子株式会社 | 非易失性存储器及对将写入其中的数据编码的系统和方法 |
Families Citing this family (65)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070103980A1 (en) * | 2005-11-10 | 2007-05-10 | Gert Koebernick | Method for operating a semiconductor memory device and semiconductor memory device |
US7606966B2 (en) | 2006-09-08 | 2009-10-20 | Sandisk Corporation | Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory |
US7885112B2 (en) | 2007-09-07 | 2011-02-08 | Sandisk Corporation | Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages |
US7734861B2 (en) * | 2006-09-08 | 2010-06-08 | Sandisk Corporation | Pseudo random and command driven bit compensation for the cycling effects in flash memory |
KR101615773B1 (ko) | 2006-09-08 | 2016-04-26 | 샌디스크 테크놀로지스, 인코포레이티드 | 플래시 메모리에서 사이클링 효과들에 대한 의사 랜덤 및 명령 구동 비트 보상 및 이를 위한 방법 |
US7619934B2 (en) * | 2006-12-20 | 2009-11-17 | Spansion Llc | Method and apparatus for adaptive memory cell overerase compensation |
US8370561B2 (en) * | 2006-12-24 | 2013-02-05 | Sandisk Il Ltd. | Randomizing for suppressing errors in a flash memory |
KR101449673B1 (ko) | 2006-12-24 | 2014-10-13 | 샌디스크 아이엘 엘티디 | 에러 억제를 위해 랜더마이징하는 플래시 메모리 디바이스, 시스템 및 방법 |
US8127200B2 (en) | 2006-12-24 | 2012-02-28 | Sandisk Il Ltd. | Flash memory device and system with randomizing for suppressing errors |
JP4498370B2 (ja) * | 2007-02-14 | 2010-07-07 | 株式会社東芝 | データ書き込み方法 |
JP2008217857A (ja) | 2007-02-28 | 2008-09-18 | Toshiba Corp | メモリコントローラ及び半導体装置 |
US8320191B2 (en) | 2007-08-30 | 2012-11-27 | Infineon Technologies Ag | Memory cell arrangement, method for controlling a memory cell, memory array and electronic device |
US7945050B2 (en) * | 2007-09-28 | 2011-05-17 | Intel Corporation | Suppressing power supply noise using data scrambling in double data rate memory systems |
US20090150595A1 (en) * | 2007-10-24 | 2009-06-11 | Avi Lavan | Balanced programming rate for memory cells |
JP4554660B2 (ja) * | 2007-11-01 | 2010-09-29 | 株式会社コナミデジタルエンタテインメント | 記憶処理装置、情報提供サーバ、動作方法、ならびに、プログラム |
US7843728B2 (en) * | 2007-11-20 | 2010-11-30 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor storage device |
US7995392B2 (en) | 2007-12-13 | 2011-08-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device capable of shortening erase time |
JP2009163782A (ja) * | 2007-12-13 | 2009-07-23 | Toshiba Corp | 半導体記憶装置 |
JP5019611B2 (ja) * | 2007-12-27 | 2012-09-05 | 株式会社東芝 | メモリシステム |
US8301912B2 (en) * | 2007-12-31 | 2012-10-30 | Sandisk Technologies Inc. | System, method and memory device providing data scrambling compatible with on-chip copy operation |
US7813169B2 (en) * | 2008-01-18 | 2010-10-12 | Qimonda Flash Gmbh | Integrated circuit and method to operate an integrated circuit |
KR101378365B1 (ko) | 2008-03-12 | 2014-03-28 | 삼성전자주식회사 | 하이브리드 메모리 데이터 검출 장치 및 방법 |
US8154918B2 (en) * | 2008-06-30 | 2012-04-10 | Sandisk Il Ltd. | Method for page- and block based scrambling in non-volatile memory |
US8230158B2 (en) * | 2008-08-12 | 2012-07-24 | Micron Technology, Inc. | Memory devices and methods of storing data on a memory device |
US8130552B2 (en) * | 2008-09-11 | 2012-03-06 | Sandisk Technologies Inc. | Multi-pass programming for memory with reduced data storage requirement |
US8145855B2 (en) | 2008-09-12 | 2012-03-27 | Sandisk Technologies Inc. | Built in on-chip data scrambler for non-volatile memory |
WO2010030701A1 (en) * | 2008-09-12 | 2010-03-18 | Sandisk Corporation | Built in on-chip data scrambler for non-volatile memory |
US8429330B2 (en) | 2008-09-12 | 2013-04-23 | Sandisk Technologies Inc. | Method for scrambling data in which scrambling data and scrambled data are stored in corresponding non-volatile memory locations |
US8874825B2 (en) * | 2009-06-30 | 2014-10-28 | Sandisk Technologies Inc. | Storage device and method using parameters based on physical memory block location |
JP5492679B2 (ja) * | 2009-06-30 | 2014-05-14 | パナソニック株式会社 | 記憶装置およびメモリコントローラ |
US8036044B2 (en) * | 2009-07-16 | 2011-10-11 | Sandisk Technologies Inc. | Dynamically adjustable erase and program levels for non-volatile memory |
KR20110055178A (ko) * | 2009-11-19 | 2011-05-25 | 삼성전자주식회사 | 플래시 메모리 장치 및 그것을 포함한 메모리 시스템 |
US8130551B2 (en) | 2010-03-31 | 2012-03-06 | Sandisk Technologies Inc. | Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage |
KR20120002760A (ko) * | 2010-07-01 | 2012-01-09 | 삼성전자주식회사 | 낸드 플래쉬 메모리의 동작 신뢰성을 향상시키는 데이터 기록 방법 및 데이터 기록 장치 |
KR101710089B1 (ko) | 2010-08-26 | 2017-02-24 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US8953318B1 (en) * | 2010-09-13 | 2015-02-10 | The Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville | Passive cooling systems and methods for electronics |
US8649200B2 (en) | 2011-01-27 | 2014-02-11 | Apple Inc. | Enhanced programming and erasure schemes for analog memory cells |
US9293194B2 (en) | 2011-01-27 | 2016-03-22 | Apple Inc. | Programming and erasure schemes for analog memory cells |
US9009547B2 (en) | 2011-01-27 | 2015-04-14 | Apple Inc. | Advanced programming verification schemes for analog memory cells |
KR20120096212A (ko) * | 2011-02-22 | 2012-08-30 | 삼성전자주식회사 | 비휘발성 메모리 장치, 메모리 컨트롤러, 및 이들의 동작 방법 |
WO2012117263A1 (en) * | 2011-03-02 | 2012-09-07 | Sandisk Il Ltd. | Method of data storage in non-volatile memory |
US8843693B2 (en) | 2011-05-17 | 2014-09-23 | SanDisk Technologies, Inc. | Non-volatile memory and method with improved data scrambling |
WO2013112336A2 (en) * | 2012-01-24 | 2013-08-01 | Apple Inc. | Programming and erasure schemes for analog memory cells |
WO2013112332A1 (en) | 2012-01-24 | 2013-08-01 | Apple Inc. | Enhanced programming and erasure schemes for analog memory cells |
US9317217B1 (en) * | 2012-05-04 | 2016-04-19 | Amazon Technologies, Inc. | Wiping and verifying storage devices |
US9454493B1 (en) * | 2012-05-04 | 2016-09-27 | Amazon Technologies, Inc. | Systems and methods for wiped storage devices |
KR20130127234A (ko) | 2012-05-14 | 2013-11-22 | 삼성전자주식회사 | 메모리의 구동 방법 |
US8787088B2 (en) | 2012-06-29 | 2014-07-22 | Sandisk Technologies Inc. | Optimized erase operation for non-volatile memory with partially programmed block |
US8971125B2 (en) * | 2012-07-02 | 2015-03-03 | Micron Technology, Inc. | Erase operations with erase-verify voltages based on where in the erase operations an erase cycle occurs |
US9292428B2 (en) | 2012-09-05 | 2016-03-22 | Kabushiki Kaisha Toshiba | Memory system |
KR101949987B1 (ko) * | 2012-12-18 | 2019-02-20 | 에스케이하이닉스 주식회사 | 데이터 저장 장치 및 그것의 동작 방법 |
US9214240B2 (en) | 2013-03-04 | 2015-12-15 | Sandisk Technologies Inc. | Dynamic erase depth for improved endurance of non-volatile memory |
KR102218735B1 (ko) | 2014-01-21 | 2021-02-23 | 삼성전자주식회사 | 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법 |
CN104882166A (zh) * | 2014-02-27 | 2015-09-02 | 北京兆易创新科技股份有限公司 | Flash存储装置、擦除方法及编程方法 |
US10409621B2 (en) | 2014-10-20 | 2019-09-10 | Taser International, Inc. | Systems and methods for distributed control |
US9343171B1 (en) | 2015-02-09 | 2016-05-17 | Sandisk Technologies Inc. | Reduced erase-verify voltage for first-programmed word line in a memory device |
US9343160B1 (en) | 2015-02-11 | 2016-05-17 | Sandisk Technologies Inc. | Erase verify in non-volatile memory |
US9236139B1 (en) | 2015-02-11 | 2016-01-12 | Sandisk Technologies Inc. | Reduced current program verify in non-volatile memory |
US10417122B2 (en) * | 2015-09-30 | 2019-09-17 | Seagate Technology Llc | Data randomization using memory block access counts |
US10580506B2 (en) | 2017-12-07 | 2020-03-03 | Micron Technology, Inc. | Semiconductor memory device and erase method including changing erase pulse magnitude for a memory array |
US10535412B2 (en) | 2018-02-09 | 2020-01-14 | Sandisk Technologies Llc | Single pulse verification of memory cells |
CN110838329B (zh) * | 2018-08-17 | 2022-04-01 | 北京兆易创新科技股份有限公司 | 一种存储器的擦除方法和系统 |
JP7163210B2 (ja) * | 2019-02-13 | 2022-10-31 | キオクシア株式会社 | 半導体記憶装置、メモリシステム及び不良検出方法 |
JP2020149745A (ja) * | 2019-03-13 | 2020-09-17 | キオクシア株式会社 | 半導体記憶装置 |
US20210303715A1 (en) * | 2020-03-25 | 2021-09-30 | SK Hynix Inc. | Data scrambler for memory systems and method thereof |
Family Cites Families (236)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1392599A (en) | 1971-07-28 | 1975-04-30 | Mullard Ltd | Semiconductor memory elements |
US3881180A (en) | 1971-11-30 | 1975-04-29 | Texas Instruments Inc | Non-volatile memory cell |
US3895360A (en) | 1974-01-29 | 1975-07-15 | Westinghouse Electric Corp | Block oriented random access memory |
US4016588A (en) | 1974-12-27 | 1977-04-05 | Nippon Electric Company, Ltd. | Non-volatile semiconductor memory device |
US4017888A (en) | 1975-12-31 | 1977-04-12 | International Business Machines Corporation | Non-volatile metal nitride oxide semiconductor device |
US4151021A (en) | 1977-01-26 | 1979-04-24 | Texas Instruments Incorporated | Method of making a high density floating gate electrically programmable ROM |
US4145703A (en) | 1977-04-15 | 1979-03-20 | Supertex, Inc. | High power MOS device and fabrication method therefor |
US4173766A (en) | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory cell |
US4173791A (en) | 1977-09-16 | 1979-11-06 | Fairchild Camera And Instrument Corporation | Insulated gate field-effect transistor read-only memory array |
US4373248A (en) | 1978-07-12 | 1983-02-15 | Texas Instruments Incorporated | Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like |
DE2832388C2 (de) | 1978-07-24 | 1986-08-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat |
US4360900A (en) | 1978-11-27 | 1982-11-23 | Texas Instruments Incorporated | Non-volatile semiconductor memory elements |
US4247861A (en) | 1979-03-09 | 1981-01-27 | Rca Corporation | High performance electrically alterable read-only memory (EAROM) |
DE2923995C2 (de) | 1979-06-13 | 1985-11-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie |
JPS5656677A (en) | 1979-10-13 | 1981-05-18 | Toshiba Corp | Semiconductor memory device |
US4281397A (en) | 1979-10-29 | 1981-07-28 | Texas Instruments Incorporated | Virtual ground MOS EPROM or ROM matrix |
DE2947350A1 (de) | 1979-11-23 | 1981-05-27 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie |
JPS56120166A (en) | 1980-02-27 | 1981-09-21 | Hitachi Ltd | Semiconductor ic device and manufacture thereof |
US4342102A (en) | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
US4380057A (en) | 1980-10-27 | 1983-04-12 | International Business Machines Corporation | Electrically alterable double dense memory |
US4521796A (en) | 1980-12-11 | 1985-06-04 | General Instrument Corporation | Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device |
EP0056195B1 (en) | 1980-12-25 | 1986-06-18 | Fujitsu Limited | Nonvolatile semiconductor memory device |
US4448400A (en) | 1981-07-13 | 1984-05-15 | Eliyahou Harari | Highly scalable dynamic RAM cell with self-signal amplification |
US4404747A (en) | 1981-07-29 | 1983-09-20 | Schur, Inc. | Knife and sheath assembly |
US4389705A (en) | 1981-08-21 | 1983-06-21 | Mostek Corporation | Semiconductor memory circuit with depletion data transfer transistor |
US4388705A (en) | 1981-10-01 | 1983-06-14 | Mostek Corporation | Semiconductor memory circuit |
US4435786A (en) | 1981-11-23 | 1984-03-06 | Fairchild Camera And Instrument Corporation | Self-refreshing memory cell |
US4494016A (en) | 1982-07-26 | 1985-01-15 | Sperry Corporation | High performance MESFET transistor for VLSI implementation |
US4527257A (en) | 1982-08-25 | 1985-07-02 | Westinghouse Electric Corp. | Common memory gate non-volatile transistor memory |
JPS5949022A (ja) | 1982-09-13 | 1984-03-21 | Toshiba Corp | 多値論理回路 |
US4613956A (en) | 1983-02-23 | 1986-09-23 | Texas Instruments Incorporated | Floating gate memory with improved dielectric |
JPS59174080A (ja) * | 1983-03-24 | 1984-10-02 | Sony Corp | テレビジヨン信号受信装置 |
US4769340A (en) | 1983-11-28 | 1988-09-06 | Exel Microelectronics, Inc. | Method for making electrically programmable memory device by doping the floating gate by implant |
US4725984A (en) | 1984-02-21 | 1988-02-16 | Seeq Technology, Inc. | CMOS eprom sense amplifier |
JPS60182174A (ja) | 1984-02-28 | 1985-09-17 | Nec Corp | 不揮発性半導体メモリ |
US5352620A (en) | 1984-05-23 | 1994-10-04 | Hitachi, Ltd. | Method of making semiconductor device with memory cells and peripheral transistors |
KR930007195B1 (ko) | 1984-05-23 | 1993-07-31 | 가부시끼가이샤 히다찌세이사꾸쇼 | 반도체 장치와 그 제조 방법 |
US4907273A (en) * | 1984-10-12 | 1990-03-06 | Wiedemer John D | High security pay television system |
US4908834A (en) * | 1984-10-12 | 1990-03-13 | Wiedemer John D | High security pay television system |
US4665426A (en) | 1985-02-01 | 1987-05-12 | Advanced Micro Devices, Inc. | EPROM with ultraviolet radiation transparent silicon nitride passivation layer |
US4761764A (en) | 1985-04-18 | 1988-08-02 | Nec Corporation | Programmable read only memory operable with reduced programming power consumption |
US4667217A (en) | 1985-04-19 | 1987-05-19 | Ncr Corporation | Two bit vertically/horizontally integrated memory cell |
JPH0831789B2 (ja) | 1985-09-04 | 1996-03-27 | 沖電気工業株式会社 | 出力回路 |
US4742491A (en) | 1985-09-26 | 1988-05-03 | Advanced Micro Devices, Inc. | Memory cell having hot-hole injection erase mode |
US4760555A (en) | 1986-04-21 | 1988-07-26 | Texas Instruments Incorporated | Memory array with an array reorganizer |
JPH0828431B2 (ja) | 1986-04-22 | 1996-03-21 | 日本電気株式会社 | 半導体記憶装置 |
US4758869A (en) | 1986-08-29 | 1988-07-19 | Waferscale Integration, Inc. | Nonvolatile floating gate transistor structure |
US5168334A (en) | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
US4780424A (en) | 1987-09-28 | 1988-10-25 | Intel Corporation | Process for fabricating electrically alterable floating gate memory devices |
US4870470A (en) | 1987-10-16 | 1989-09-26 | International Business Machines Corporation | Non-volatile memory cell having Si rich silicon nitride charge trapping layer |
US4839705A (en) | 1987-12-16 | 1989-06-13 | Texas Instruments Incorporated | X-cell EEPROM array |
JPH07120720B2 (ja) | 1987-12-17 | 1995-12-20 | 三菱電機株式会社 | 不揮発性半導体記憶装置 |
US5159570A (en) | 1987-12-22 | 1992-10-27 | Texas Instruments Incorporated | Four memory state EEPROM |
US4888735A (en) | 1987-12-30 | 1989-12-19 | Elite Semiconductor & Systems Int'l., Inc. | ROM cell and array configuration |
US4857770A (en) | 1988-02-29 | 1989-08-15 | Advanced Micro Devices, Inc. | Output buffer arrangement for reducing chip noise without speed penalty |
US4941028A (en) | 1988-08-10 | 1990-07-10 | Actel Corporation | Structure for protecting thin dielectrics during processing |
JPH0271493A (ja) | 1988-09-06 | 1990-03-12 | Mitsubishi Electric Corp | 半導体メモリ装置 |
US5042009A (en) | 1988-12-09 | 1991-08-20 | Waferscale Integration, Inc. | Method for programming a floating gate memory device |
US5293563A (en) | 1988-12-29 | 1994-03-08 | Sharp Kabushiki Kaisha | Multi-level memory cell with increased read-out margin |
US5120672A (en) | 1989-02-22 | 1992-06-09 | Texas Instruments Incorporated | Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region |
US5142495A (en) | 1989-03-10 | 1992-08-25 | Intel Corporation | Variable load for margin mode |
DE3931596A1 (de) | 1989-03-25 | 1990-10-04 | Eurosil Electronic Gmbh | Spannungsvervielfacherschaltung |
US5172338B1 (en) | 1989-04-13 | 1997-07-08 | Sandisk Corp | Multi-state eeprom read and write circuits and techniques |
US4961010A (en) | 1989-05-19 | 1990-10-02 | National Semiconductor Corporation | Output buffer for reducing switching induced noise |
US5104819A (en) | 1989-08-07 | 1992-04-14 | Intel Corporation | Fabrication of interpoly dielctric for EPROM-related technologies |
US5081675A (en) * | 1989-11-13 | 1992-01-14 | Kitti Kittirutsunetorn | System for protection of software in memory against unauthorized use |
US5027321A (en) | 1989-11-21 | 1991-06-25 | Intel Corporation | Apparatus and method for improved reading/programming of virtual ground EPROM arrays |
US4992391A (en) | 1989-11-29 | 1991-02-12 | Advanced Micro Devices, Inc. | Process for fabricating a control gate for a floating gate FET |
JP2697231B2 (ja) * | 1990-03-12 | 1998-01-14 | 松下電器産業株式会社 | Catvシステム |
JPH043395A (ja) * | 1990-04-20 | 1992-01-08 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5204835A (en) | 1990-06-13 | 1993-04-20 | Waferscale Integration Inc. | Eprom virtual ground array |
EP0461904A3 (en) | 1990-06-14 | 1992-09-09 | Creative Integrated Systems, Inc. | An improved semiconductor read-only vlsi memory |
US5075245A (en) | 1990-08-03 | 1991-12-24 | Intel Corporation | Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps |
US5091938B1 (en) * | 1990-08-06 | 1997-02-04 | Nippon Denki Home Electronics | Digital data cryptographic system |
US5289406A (en) | 1990-08-28 | 1994-02-22 | Mitsubishi Denki Kabushiki Kaisha | Read only memory for storing multi-data |
US5117389A (en) | 1990-09-05 | 1992-05-26 | Macronix International Co., Ltd. | Flat-cell read-only-memory integrated circuit |
KR920006991A (ko) | 1990-09-25 | 1992-04-28 | 김광호 | 반도체메모리 장치의 고전압발생회로 |
US5081371A (en) | 1990-11-07 | 1992-01-14 | U.S. Philips Corp. | Integrated charge pump circuit with back bias voltage reduction |
JP3002309B2 (ja) * | 1990-11-13 | 2000-01-24 | ウエハスケール インテグレーション, インコーポレイテッド | 高速epromアレイ |
JP2987193B2 (ja) | 1990-11-20 | 1999-12-06 | 富士通株式会社 | 半導体記憶装置 |
US5094968A (en) | 1990-11-21 | 1992-03-10 | Atmel Corporation | Fabricating a narrow width EEPROM with single diffusion electrode formation |
US5086325A (en) | 1990-11-21 | 1992-02-04 | Atmel Corporation | Narrow width EEPROM with single diffusion electrode formation |
JP2612969B2 (ja) | 1991-02-08 | 1997-05-21 | シャープ株式会社 | 半導体装置の製造方法 |
US5270979A (en) * | 1991-03-15 | 1993-12-14 | Sundisk Corporation | Method for optimum erasing of EEPROM |
JPH04311900A (ja) | 1991-04-10 | 1992-11-04 | Sharp Corp | 半導体読み出し専用メモリ |
JP2930440B2 (ja) | 1991-04-15 | 1999-08-03 | 沖電気工業株式会社 | 半導体集積回路 |
US5142496A (en) | 1991-06-03 | 1992-08-25 | Advanced Micro Devices, Inc. | Method for measuring VT 's less than zero without applying negative voltages |
US5245572A (en) | 1991-07-30 | 1993-09-14 | Intel Corporation | Floating gate nonvolatile memory with reading while writing capability |
JP2965415B2 (ja) | 1991-08-27 | 1999-10-18 | 松下電器産業株式会社 | 半導体記憶装置 |
US5305262A (en) | 1991-09-11 | 1994-04-19 | Kawasaki Steel Corporation | Semiconductor integrated circuit |
US5175120A (en) | 1991-10-11 | 1992-12-29 | Micron Technology, Inc. | Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors |
JPH05110114A (ja) | 1991-10-17 | 1993-04-30 | Rohm Co Ltd | 不揮発性半導体記憶素子 |
US5355178A (en) * | 1991-10-24 | 1994-10-11 | Eastman Kodak Company | Mechanism for improving television display of still images using image motion-dependent filter |
JP3358663B2 (ja) | 1991-10-25 | 2002-12-24 | ローム株式会社 | 半導体記憶装置およびその記憶情報読出方法 |
US5428568A (en) * | 1991-10-30 | 1995-06-27 | Mitsubishi Denki Kabushiki Kaisha | Electrically erasable and programmable non-volatile memory device and a method of operating the same |
US5338954A (en) | 1991-10-31 | 1994-08-16 | Rohm Co., Ltd. | Semiconductor memory device having an insulating film and a trap film joined in a channel region |
US5357134A (en) | 1991-10-31 | 1994-10-18 | Rohm Co., Ltd. | Nonvolatile semiconductor device having charge trap film containing silicon crystal grains |
JPH05129284A (ja) | 1991-11-06 | 1993-05-25 | Sony Corp | プラズマSiN成膜条件の設定方法及び半導体装置の製造方法 |
US5260593A (en) | 1991-12-10 | 1993-11-09 | Micron Technology, Inc. | Semiconductor floating gate device having improved channel-floating gate interaction |
JP2564067B2 (ja) | 1992-01-09 | 1996-12-18 | 株式会社東芝 | センス回路を有する読み出し出力回路 |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
US5293328A (en) * | 1992-01-15 | 1994-03-08 | National Semiconductor Corporation | Electrically reprogrammable EPROM cell with merged transistor and optiumum area |
JP2851962B2 (ja) | 1992-01-21 | 1999-01-27 | シャープ株式会社 | 半導体読み出し専用メモリ |
EP0552531B1 (en) * | 1992-01-22 | 2000-08-16 | Macronix International Co., Ltd. | Non-volatile memory cell and array architecture |
US5324675A (en) | 1992-03-31 | 1994-06-28 | Kawasaki Steel Corporation | Method of producing semiconductor devices of a MONOS type |
JPH05290584A (ja) | 1992-04-08 | 1993-11-05 | Nec Corp | 半導体記憶装置 |
EP0597124B1 (en) * | 1992-05-29 | 1998-12-09 | Citizen Watch Co. Ltd. | Method of fabricating a semiconductor nonvolatile storage device |
US5289412A (en) | 1992-06-19 | 1994-02-22 | Intel Corporation | High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories |
JPH065823A (ja) | 1992-06-19 | 1994-01-14 | Toshiba Corp | 不揮発性半導体記憶装置及びその使用方法 |
EP0596198B1 (en) * | 1992-07-10 | 2000-03-29 | Sony Corporation | Flash eprom with erase verification and address scrambling architecture |
US5315541A (en) | 1992-07-24 | 1994-05-24 | Sundisk Corporation | Segmented column memory array |
JP3036565B2 (ja) | 1992-08-28 | 2000-04-24 | 日本電気株式会社 | 不揮発性半導体記憶装置の製造方法 |
US5280420A (en) | 1992-10-02 | 1994-01-18 | National Semiconductor Corporation | Charge pump which operates on a low voltage power supply |
JP2825217B2 (ja) * | 1992-11-11 | 1998-11-18 | シャープ株式会社 | フラッシュメモリ |
US5418743A (en) * | 1992-12-07 | 1995-05-23 | Nippon Steel Corporation | Method of writing into non-volatile semiconductor memory |
JPH07114792A (ja) * | 1993-10-19 | 1995-05-02 | Mitsubishi Electric Corp | 半導体記憶装置 |
US5515173A (en) * | 1993-03-05 | 1996-05-07 | Gemstar Developement Corporation | System and method for automatically recording television programs in television systems with tuners external to video recorders |
US5393701A (en) | 1993-04-08 | 1995-02-28 | United Microelectronics Corporation | Layout design to eliminate process antenna effect |
JP3317459B2 (ja) * | 1993-04-30 | 2002-08-26 | ローム株式会社 | 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法 |
US5335198A (en) | 1993-05-06 | 1994-08-02 | Advanced Micro Devices, Inc. | Flash EEPROM array with high endurance |
US5350710A (en) | 1993-06-24 | 1994-09-27 | United Microelectronics Corporation | Device for preventing antenna effect on circuit |
US5400286A (en) * | 1993-08-17 | 1995-03-21 | Catalyst Semiconductor Corp. | Self-recovering erase scheme to enhance flash memory endurance |
US5666516A (en) * | 1993-12-16 | 1997-09-09 | International Business Machines Corporation | Protected programmable memory cartridge having selective access circuitry |
US5440505A (en) * | 1994-01-21 | 1995-08-08 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
FR2715782B1 (fr) * | 1994-01-31 | 1996-03-22 | Sgs Thomson Microelectronics | Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire. |
FR2715758B1 (fr) * | 1994-01-31 | 1996-03-22 | Sgs Thomson Microelectronics | Bascule bistable non volatile programmable par la source, notamment pour circuit de redondance de mémoire. |
TW241394B (en) * | 1994-05-26 | 1995-02-21 | Aplus Integrated Circuits Inc | Flat-cell ROM and decoder |
US5608679A (en) * | 1994-06-02 | 1997-03-04 | Intel Corporation | Fast internal reference cell trimming for flash EEPROM memory |
JP3725911B2 (ja) * | 1994-06-02 | 2005-12-14 | 株式会社ルネサステクノロジ | 半導体装置 |
EP0691729A3 (en) * | 1994-06-30 | 1996-08-14 | Sgs Thomson Microelectronics | Charge pump circuit with feedback control |
EP0696050B1 (en) * | 1994-07-18 | 1998-10-14 | STMicroelectronics S.r.l. | EPROM and Flash-EEPROM non-volatile memory and method of manufacturing the same |
JP3730272B2 (ja) * | 1994-09-17 | 2005-12-21 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5612642A (en) * | 1995-04-28 | 1997-03-18 | Altera Corporation | Power-on reset circuit with hysteresis |
JPH08115597A (ja) * | 1994-10-17 | 1996-05-07 | Mitsubishi Electric Corp | 半導体ディスク装置 |
US5561714A (en) * | 1994-12-12 | 1996-10-01 | Tektronix, Inc. | Scrambling system for serial digital video |
US5599727A (en) * | 1994-12-15 | 1997-02-04 | Sharp Kabushiki Kaisha | Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed |
JP4183290B2 (ja) * | 1994-12-27 | 2008-11-19 | マクロニクス インターナショナル カンパニイ リミテッド | ベリファイ機能を備えた不揮発性半導体装置 |
US5889698A (en) * | 1995-01-31 | 1999-03-30 | Hitachi, Ltd. | Nonvolatile memory device and refreshing method |
US5518942A (en) * | 1995-02-22 | 1996-05-21 | Alliance Semiconductor Corporation | Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant |
JPH08306196A (ja) * | 1995-04-28 | 1996-11-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
AU6185196A (en) * | 1995-07-03 | 1997-02-05 | Elvira Gulerson | Method of fabricating a fast programming flash e2prm cell |
US5751944A (en) * | 1995-07-28 | 1998-05-12 | Micron Quantum Devices, Inc. | Non-volatile memory system having automatic cycling test function |
JP3251164B2 (ja) * | 1995-12-14 | 2002-01-28 | シャープ株式会社 | 半導体装置及びその製造方法 |
KR100223747B1 (ko) * | 1995-12-28 | 1999-10-15 | 김영환 | 고속 저잡음 출력 버퍼 |
US5712815A (en) * | 1996-04-22 | 1998-01-27 | Advanced Micro Devices, Inc. | Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells |
US5715193A (en) * | 1996-05-23 | 1998-02-03 | Micron Quantum Devices, Inc. | Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks |
US5886927A (en) * | 1996-06-11 | 1999-03-23 | Nkk Corporation | Nonvolatile memory device with verify function |
JPH1011990A (ja) * | 1996-06-26 | 1998-01-16 | Nkk Corp | ベリファイ機能を有する不揮発性記憶装置 |
JP2882370B2 (ja) * | 1996-06-28 | 1999-04-12 | 日本電気株式会社 | 半導体記憶装置 |
US6037627A (en) * | 1996-08-02 | 2000-03-14 | Seiko Instruments Inc. | MOS semiconductor device |
US5787484A (en) * | 1996-08-08 | 1998-07-28 | Micron Technology, Inc. | System and method which compares data preread from memory cells to data to be written to the cells |
US5717635A (en) * | 1996-08-27 | 1998-02-10 | International Business Machines Corporation | High density EEPROM for solid state file |
US5873113A (en) * | 1996-09-24 | 1999-02-16 | Altera Corporation | System and method for programming eprom cells using shorter duration pulse(s) in repeating the programming process of a particular cell |
JPH10133754A (ja) * | 1996-10-28 | 1998-05-22 | Fujitsu Ltd | レギュレータ回路及び半導体集積回路装置 |
US5717632A (en) * | 1996-11-27 | 1998-02-10 | Advanced Micro Devices, Inc. | Apparatus and method for multiple-level storage in non-volatile memories |
TW318283B (en) * | 1996-12-09 | 1997-10-21 | United Microelectronics Corp | Multi-level read only memory structure and manufacturing method thereof |
US5870335A (en) * | 1997-03-06 | 1999-02-09 | Agate Semiconductor, Inc. | Precision programming of nonvolatile memory cells |
US6028324A (en) * | 1997-03-07 | 2000-02-22 | Taiwan Semiconductor Manufacturing Company | Test structures for monitoring gate oxide defect densities and the plasma antenna effect |
JP4253052B2 (ja) * | 1997-04-08 | 2009-04-08 | 株式会社東芝 | 半導体装置 |
TW381325B (en) * | 1997-04-15 | 2000-02-01 | United Microelectronics Corp | Three dimensional high density deep trench ROM and the manufacturing method thereof |
US5880620A (en) * | 1997-04-22 | 1999-03-09 | Xilinx, Inc. | Pass gate circuit with body bias control |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US5867429A (en) * | 1997-11-19 | 1999-02-02 | Sandisk Corporation | High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates |
US5963465A (en) * | 1997-12-12 | 1999-10-05 | Saifun Semiconductors, Ltd. | Symmetric segmented memory array architecture |
US6020241A (en) * | 1997-12-22 | 2000-02-01 | Taiwan Semiconductor Manufacturing Company | Post metal code engineering for a ROM |
US6148435A (en) * | 1997-12-24 | 2000-11-14 | Cypress Semiconductor Corporation | Optimized programming/erase parameters for programmable devices |
US6195368B1 (en) * | 1998-01-14 | 2001-02-27 | Skystream Corporation | Re-timing of video program bearing streams transmitted by an asynchronous communication link |
US6292490B1 (en) * | 1998-01-14 | 2001-09-18 | Skystream Corporation | Receipts and dispatch timing of transport packets in a video program bearing stream remultiplexer |
US6351474B1 (en) * | 1998-01-14 | 2002-02-26 | Skystream Networks Inc. | Network distributed remultiplexer for video program bearing transport streams |
US6195196B1 (en) * | 1998-03-13 | 2001-02-27 | Fuji Photo Film Co., Ltd. | Array-type exposing device and flat type display incorporating light modulator and driving method thereof |
US6030871A (en) * | 1998-05-05 | 2000-02-29 | Saifun Semiconductors Ltd. | Process for producing two bit ROM cell utilizing angled implant |
US6188211B1 (en) * | 1998-05-13 | 2001-02-13 | Texas Instruments Incorporated | Current-efficient low-drop-out voltage regulator with improved load regulation and frequency response |
US6348711B1 (en) * | 1998-05-20 | 2002-02-19 | Saifun Semiconductors Ltd. | NROM cell with self-aligned programming and erasure areas |
US6034403A (en) * | 1998-06-25 | 2000-03-07 | Acer Semiconductor Manufacturing, Inc. | High density flat cell mask ROM |
JO2117B1 (en) * | 1998-07-15 | 2000-05-21 | كانال + تيكنولوجيز سوسيته انونيم | A method and device for the secure communication of information between a group of audio-visual devices that operate with numbers |
DE69828966D1 (de) * | 1998-09-15 | 2005-03-17 | St Microelectronics Srl | Verfahren zum Schutz des Inhalts nichtflüchtiger Speicherzellen |
US6044019A (en) * | 1998-10-23 | 2000-03-28 | Sandisk Corporation | Non-volatile memory with improved sensing and method therefor |
US6282145B1 (en) * | 1999-01-14 | 2001-08-28 | Silicon Storage Technology, Inc. | Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system |
US6587315B1 (en) * | 1999-01-20 | 2003-07-01 | Alps Electric Co., Ltd. | Magnetoresistive-effect device with a magnetic coupling junction |
US6181597B1 (en) * | 1999-02-04 | 2001-01-30 | Tower Semiconductor Ltd. | EEPROM array using 2-bit non-volatile memory cells with serial read operations |
US6346442B1 (en) * | 1999-02-04 | 2002-02-12 | Tower Semiconductor Ltd. | Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array |
US6337502B1 (en) * | 1999-06-18 | 2002-01-08 | Saifun Semicinductors Ltd. | Method and circuit for minimizing the charging effect during manufacture of semiconductor devices |
JP3438669B2 (ja) * | 1999-09-14 | 2003-08-18 | 日本電気株式会社 | 移動通信端末装置及びその制御方法並びにその制御プログラムを記録した記録媒体 |
JP2001101870A (ja) * | 1999-09-30 | 2001-04-13 | Fujitsu Ltd | 半導体集積回路 |
US6181605B1 (en) * | 1999-10-06 | 2001-01-30 | Advanced Micro Devices, Inc. | Global erase/program verification apparatus and method |
US6175523B1 (en) * | 1999-10-25 | 2001-01-16 | Advanced Micro Devices, Inc | Precharging mechanism and method for NAND-based flash memory devices |
US7039614B1 (en) * | 1999-11-09 | 2006-05-02 | Sony Corporation | Method for simulcrypting scrambled data to a plurality of conditional access devices |
JP2001143487A (ja) * | 1999-11-15 | 2001-05-25 | Nec Corp | 半導体記憶装置 |
JP4360736B2 (ja) * | 2000-01-27 | 2009-11-11 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法 |
US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
US6343033B1 (en) * | 2000-02-25 | 2002-01-29 | Advanced Micro Devices, Inc. | Variable pulse width memory programming |
WO2001080238A1 (en) * | 2000-04-05 | 2001-10-25 | Infineon Technologies North America Corp. | Improved read/write channel |
US6292394B1 (en) * | 2000-06-29 | 2001-09-18 | Saifun Semiconductors Ltd. | Method for programming of a semiconductor memory cell |
JP4707803B2 (ja) * | 2000-07-10 | 2011-06-22 | エルピーダメモリ株式会社 | エラーレート判定方法と半導体集積回路装置 |
US6519182B1 (en) * | 2000-07-10 | 2003-02-11 | Advanced Micro Devices, Inc. | Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure |
US6563741B2 (en) * | 2001-01-30 | 2003-05-13 | Micron Technology, Inc. | Flash memory device and method of erasing |
US6898037B2 (en) * | 2001-02-20 | 2005-05-24 | Seagate Technology Llc | Optical equipment assemblies and techniques |
US6348381B1 (en) * | 2001-02-21 | 2002-02-19 | Macronix International Co., Ltd. | Method for forming a nonvolatile memory with optimum bias condition |
DE10110150A1 (de) * | 2001-03-02 | 2002-09-19 | Infineon Technologies Ag | Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray |
US6351415B1 (en) * | 2001-03-28 | 2002-02-26 | Tower Semiconductor Ltd. | Symmetrical non-volatile memory array architecture without neighbor effect |
US6677805B2 (en) * | 2001-04-05 | 2004-01-13 | Saifun Semiconductors Ltd. | Charge pump stage with body effect minimization |
US6493266B1 (en) * | 2001-04-09 | 2002-12-10 | Advanced Micro Devices, Inc. | Soft program and soft program verify of the core cells in flash memory array |
US6438037B1 (en) * | 2001-05-09 | 2002-08-20 | Advanced Micro Devices, Inc. | Threshold voltage compacting for non-volatile semiconductor memory designs |
US6522585B2 (en) * | 2001-05-25 | 2003-02-18 | Sandisk Corporation | Dual-cell soft programming for virtual-ground memory arrays |
EP1262995B1 (en) * | 2001-05-30 | 2010-01-27 | STMicroelectronics S.r.l. | A semiconductor memory system |
JP2002367380A (ja) * | 2001-06-05 | 2002-12-20 | Sony Corp | 不揮発性半導体メモリ装置 |
US6512701B1 (en) * | 2001-06-21 | 2003-01-28 | Advanced Micro Devices, Inc. | Erase method for dual bit virtual ground flash |
US6462387B1 (en) * | 2001-06-29 | 2002-10-08 | Chinatech Corporation | High density read only memory |
US6525969B1 (en) * | 2001-08-10 | 2003-02-25 | Advanced Micro Devices, Inc. | Decoder apparatus and methods for pre-charging bit lines |
US6614689B2 (en) * | 2001-08-13 | 2003-09-02 | Micron Technology, Inc. | Non-volatile memory having a control mini-array |
US6981188B2 (en) * | 2001-08-16 | 2005-12-27 | Tower Semiconductor Ltd. | Non-volatile memory device with self test |
JP2003068086A (ja) * | 2001-08-28 | 2003-03-07 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US6549468B2 (en) * | 2001-08-30 | 2003-04-15 | Micron Technology, Inc. | Non-volatile memory with address descrambling |
ITRM20010556A1 (it) * | 2001-09-12 | 2003-03-12 | Micron Technology Inc | Decodificatore per decodificare i comandi di commutazione a modo di test di circuiti integrati. |
EP1293905A1 (en) * | 2001-09-17 | 2003-03-19 | STMicroelectronics S.r.l. | A pointer circuit |
US6440797B1 (en) * | 2001-09-28 | 2002-08-27 | Advanced Micro Devices, Inc. | Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory |
US6510082B1 (en) * | 2001-10-23 | 2003-01-21 | Advanced Micro Devices, Inc. | Drain side sensing scheme for virtual ground flash EPROM array with adjacent bit charge and hold |
US6643181B2 (en) * | 2001-10-24 | 2003-11-04 | Saifun Semiconductors Ltd. | Method for erasing a memory cell |
US6639271B1 (en) * | 2001-12-20 | 2003-10-28 | Advanced Micro Devices, Inc. | Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same |
US6674138B1 (en) * | 2001-12-31 | 2004-01-06 | Advanced Micro Devices, Inc. | Use of high-k dielectric materials in modified ONO structure for semiconductor devices |
US7190620B2 (en) * | 2002-01-31 | 2007-03-13 | Saifun Semiconductors Ltd. | Method for operating a memory device |
US6700818B2 (en) * | 2002-01-31 | 2004-03-02 | Saifun Semiconductors Ltd. | Method for operating a memory device |
FR2835521B1 (fr) * | 2002-02-04 | 2004-04-09 | Inst Francais Du Petrole | Composition catalytique contenant un aluminoxane pour la dimerisation, la co-dimerisation et l'oligomerisation des olefines |
US6958940B2 (en) * | 2002-02-28 | 2005-10-25 | Renesas Technology Corp. | Nonvolatile semiconductor memory device capable of realizing optimized erasing operation in a memory array |
JP3891863B2 (ja) * | 2002-03-07 | 2007-03-14 | 松下電器産業株式会社 | 半導体装置及び半導体装置の駆動方法 |
US6706595B2 (en) * | 2002-03-14 | 2004-03-16 | Advanced Micro Devices, Inc. | Hard mask process for memory device without bitline shorts |
US6587383B1 (en) * | 2002-03-19 | 2003-07-01 | Micron Technology, Inc. | Erase block architecture for non-volatile memory |
US6690602B1 (en) * | 2002-04-08 | 2004-02-10 | Advanced Micro Devices, Inc. | Algorithm dynamic reference programming |
CN1292356C (zh) * | 2002-04-17 | 2006-12-27 | 松下电器产业株式会社 | 非易失性半导体存储装置及其机密保护方法 |
US6813189B2 (en) * | 2002-07-16 | 2004-11-02 | Fujitsu Limited | System for using a dynamic reference in a double-bit cell memory |
JP4260434B2 (ja) * | 2002-07-16 | 2009-04-30 | 富士通マイクロエレクトロニクス株式会社 | 不揮発性半導体メモリ及びその動作方法 |
JP2004079602A (ja) * | 2002-08-12 | 2004-03-11 | Fujitsu Ltd | トラップ層を有する不揮発性メモリ |
US6992932B2 (en) * | 2002-10-29 | 2006-01-31 | Saifun Semiconductors Ltd | Method circuit and system for read error detection in a non-volatile memory array |
US7447667B2 (en) * | 2002-12-11 | 2008-11-04 | International Business Machines Corporation | Method and knowledge structures for reasoning about concepts, relations, and rules |
WO2005015775A1 (en) * | 2003-08-11 | 2005-02-17 | Nortel Networks Limited | System and method for embedding ofdm in cdma systems |
US7447847B2 (en) * | 2004-07-19 | 2008-11-04 | Micron Technology, Inc. | Memory device trims |
-
2006
- 2006-01-18 CN CNA2006100059975A patent/CN1838323A/zh active Pending
- 2006-01-18 EP EP06100526A patent/EP1684308A1/en not_active Withdrawn
- 2006-01-18 EP EP06100507A patent/EP1686592A3/en not_active Withdrawn
- 2006-01-18 CN CNA2006100059960A patent/CN1838328A/zh active Pending
- 2006-01-18 EP EP06100524A patent/EP1684307A1/en not_active Withdrawn
- 2006-01-19 US US11/335,321 patent/US7468926B2/en not_active Expired - Fee Related
- 2006-01-19 JP JP2006010819A patent/JP2006228407A/ja active Pending
- 2006-01-19 JP JP2006010810A patent/JP2006228405A/ja active Pending
- 2006-01-19 CN CNA2006100054168A patent/CN1822233A/zh active Pending
- 2006-01-19 US US11/335,318 patent/US7369440B2/en active Active
- 2006-01-19 US US11/335,316 patent/US20060181934A1/en not_active Abandoned
- 2006-01-19 JP JP2006010811A patent/JP2006228406A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101562043B (zh) * | 2008-04-15 | 2013-12-11 | 三星电子株式会社 | 非易失性存储器及对将写入其中的数据编码的系统和方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006228405A (ja) | 2006-08-31 |
EP1686592A3 (en) | 2007-04-25 |
JP2006228406A (ja) | 2006-08-31 |
EP1684307A1 (en) | 2006-07-26 |
JP2006228407A (ja) | 2006-08-31 |
US20060158940A1 (en) | 2006-07-20 |
CN1822233A (zh) | 2006-08-23 |
EP1686592A2 (en) | 2006-08-02 |
US20060181934A1 (en) | 2006-08-17 |
US7369440B2 (en) | 2008-05-06 |
US7468926B2 (en) | 2008-12-23 |
CN1838328A (zh) | 2006-09-27 |
EP1684308A1 (en) | 2006-07-26 |
US20060158938A1 (en) | 2006-07-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1838323A (zh) | 可预防固定模式编程的方法 | |
US8416624B2 (en) | Erase and programming techniques to reduce the widening of state distributions in non-volatile memories | |
KR100904752B1 (ko) | 인접 메모리 셀과의 필드 커플링에 의해 영향을 받는메모리 셀로부터 데이터를 복원시키는 기법 | |
KR101285576B1 (ko) | 비휘발성 메모리를 프로그래밍/소거하기 위한 방법 및 장치 | |
TWI413123B (zh) | 記憶體結構及其程式化方法 | |
US7548462B2 (en) | Double programming methods of a multi-level-cell nonvolatile memory | |
US5856942A (en) | Flash memory array and decoding architecture | |
US7518909B2 (en) | Non-volatile memory device adapted to reduce coupling effect between storage elements and related methods | |
WO2007049272A2 (en) | A method for recovering from errors in flash memory | |
US7385851B1 (en) | Repetitive erase verify technique for flash memory devices | |
CN101040344A (zh) | 用于可编程存储器的自适应编程延迟电路 | |
EP1175680B1 (en) | Ramped or stepped gate channel erase for flash memory application | |
US7468924B2 (en) | Non-volatile memory device capable of reducing threshold voltage distribution | |
CN1945743A (zh) | 降低擦除时间及防止过擦除之擦除方法 | |
KR102147104B1 (ko) | 적응형 기록 동작들을 갖는 비―휘발성 메모리(nvm) | |
US20210183457A1 (en) | Method for programming a memory system | |
US9245644B2 (en) | Method and apparatus for reducing erase disturb of memory by using recovery bias | |
US6654287B2 (en) | Method of re-programming an array of non-volatile memory cells, in particular of the nor architecture flash type, after an erase operation, and a corresponding memory device | |
KR100954949B1 (ko) | 불휘발성 메모리 장치의 멀티 레벨 셀 프로그램 방법 | |
WO2008082824A2 (en) | Multi-level operation in dual element cells using a supplemental programming level | |
CN104217760A (zh) | 闪存的配置方法 | |
US6327186B1 (en) | Non-volatile semiconductor memory including memory cells having different charge exchange capability | |
US11538538B1 (en) | Apparatus and methods for smart verify with neighbor plane disturb detection | |
CN103390426B (zh) | 通过使用回复偏压来减少存储器中擦除干扰的方法与装置 | |
CN114400038A (zh) | 三维存储器及其控制方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |