CN1838328A - 擦除存储器阵列上存储单元的方法 - Google Patents

擦除存储器阵列上存储单元的方法 Download PDF

Info

Publication number
CN1838328A
CN1838328A CNA2006100059960A CN200610005996A CN1838328A CN 1838328 A CN1838328 A CN 1838328A CN A2006100059960 A CNA2006100059960 A CN A2006100059960A CN 200610005996 A CN200610005996 A CN 200610005996A CN 1838328 A CN1838328 A CN 1838328A
Authority
CN
China
Prior art keywords
verification
subgroup
level
unit set
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2006100059960A
Other languages
English (en)
Inventor
阿萨夫·沙比尔
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion Israel Ltd
Original Assignee
Spansion Israel Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion Israel Ltd filed Critical Spansion Israel Ltd
Publication of CN1838328A publication Critical patent/CN1838328A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/14—Protection against unauthorised use of memory or access to memory
    • G06F12/1408—Protection against unauthorised use of memory or access to memory by using cryptography
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously

Abstract

本发明提供了一种擦除存储器阵列上存储单元的方法，该方法包括向存储单元阵列的单元集合的比特施加擦除脉冲，并仅在被擦除的单元集合的一个子群上执行擦除校验操作，以检查存储单元阈电压(Vt)是否已经降低至一擦除校验(EV)电压水平。

Description

擦除存储器阵列上存储单元的方法
技术领域
本发明涉及对非易失存储器(NVM)阵列存储单元的操作，例如，编程和擦除，特别涉及减少对这些阵列的擦除脉冲和擦除校验操作的方法。
背景技术
目前，非易失存储器产品集成了对存储单元进行电子编程和擦除的能力。主要表现为，擦除操作不是在每个单元上逐一执行，而是在单元子群上执行，就像在编程操作期间正常执行一样。这意味着，直到最后(最慢)的单元完成擦除，擦除条件才施加于整个子群，即，校验是否超出预定的水平(擦除校验)。
集成了在擦除期间进行隧道增强热孔注入的存储器产品，如在NROM(氮化物只读存储器)技术中，要求晶体管结点高偏压以通过带到带隧道效应产生注入孔，如图1所示。必须控制电荷注入以保证适当的设备操作，因此步进和校验算法常被采用。在一个典型的算法中，以一特定的偏压注入电荷，其后进行一校验操作，以探测单元是否达到预设状态。如果未达到预设状态，就通过一更高的偏压启动更强的电荷注入，反之亦然。对隧道增强热孔注入来说，常要在存储器单元两面同时分别执行这一流程，其结果是更长的擦除时间和更低的执行效率。
在设备的使用寿命期间，特别是经过密集的循环(连续编程和擦除操作)之后，用以擦除NROM和类似NROM单元的电压就应增加。例如，图2是现有技术的一个典型实施例，表示循环之前和之后的NROM单元的擦除曲线。该曲线显示了擦除操作的退化，其中，每个循环之后，都要施加更高的电压来擦除单元。
图3是循环对擦除电压的不利影响的另一个实施例。特别地，图3表示出现有技术中基于NROM的存储器产品的擦除电压和步进计数，其为在一个设备上进行编程/擦除操作(循环计数)数量的函数。漏压(Vppd)增加至一特定电压值(如图中所示特定产品的最大允许电压7.1V)，同时，脉冲数量也增加。在达到最大允许电压之后，电压水平变得稳定。
由于在产品测试初期就设定了初始擦除电压，在擦除操作中会逐步累积，这在产品使用周期的中后期就转化为低下的效率。
在现有技术中，曾经提出并尝试过很多措施来提高以孔注入为基础的擦除流程的效率。其中一种措施，以一高于最后一个脉冲的水平施加一额外的擦除脉冲，以保证完全擦除，提高可靠性。多个专利文件中均提及采用附加脉冲的方法，例如，美国专利6700818、美国专利申请20050117395和20050058005，这些专利或申请均已转让给本申请的受让人，本申请将参考其内容。
另一种措施是在两个连续的步骤之间采用大电压跨度。但这种方法可能导致操作可控性降低。还有一种措施是采用多种电压增幅。因为经常同时在多个单元上同时执行电荷注入，这种措施的原理是，可集成大电压跨度直至第一个单元集合体到达其目标，继以一个更小的电压跨度直至单元集合完成。
还有一种措施是在学习阶段中，据一先前的单元群或同样单元群的擦除操作确定一优先步电压水平，该电压水平施加在阵列的其余单元上，以便更快。另一种措施是，在产品分类时的第一个脉冲水平进行拨号。但是这种措施不能确保较短的脉冲计数时间开销。
另一种措施则采用多种校验水平。这样脉冲电压可以较快至一最终脉冲水平，但是这种措施要求更复杂的设计和更长的校验时间。另一种措施要求在脉冲应用/校验操作时，单元的两面交互进行。这种办法可使擦除效率双倍提高，但是可控性会降低。
另一种措施通过减少能量消耗采用增强的擦除并行机制。还有一种措施，如果足够多的单元擦除失败，则停止擦除校验。施加附加一个擦除脉冲之后，在第一次失效的地址继续进行擦除校验。但是，在上述所有现有技术中，擦除群中的所有单元必须通过几个擦除校验，包括在完成擦除操作之前，并联字线切换时间开销的损失。
发明内容
本发明提供一种擦除存储器阵列上的存储单元的比特和减少此类阵列的擦除脉冲及擦除校验操作的方法。本发明将在下文中详述，其涉及一种NVM阵列存储单元，特别涉及一种单比特、双比特、多比特和多电平NROM单元，其中擦除动作通常包括将比特的阈电压水平调整至一目标阈值，本发明不限于NROM阵列。
在一个实施例中，为减少擦除操作的总体时间，需要减少校验和切换时间，但不限于此。通过缩短孔注入脉冲间的校验操作，可以减少上述现有技术中的时问损失，从而充分提高产品执行效率。
按本发明的一个实施例提供的方法，可擦除存储器阵列上的存储单元，该方法包括向存储单元阵列的单元集合的所有比特施加擦除脉冲，并仅对被擦除的单元集合的一个子群执行擦除校验操作，以检查该存储单元的阈电压(Vt)是否降低至擦除校验(EV)电压水平，如果是，就对单元集合停止擦除操作，而不论是否对单元集合的其余部分进行了检查。
按本发明的一个实施例，只有单元集合的子群被校验完成了擦除，该单元集合才可被校验完成了擦除。
按本发明的一个实施例，对该子群进行擦除校验使其电平低于目标擦除校验电压水平更低，以保证即使没有对全部单元进行校验，整个单元集合仍被擦除。
按本发明的一个实施例，该方法可进一步包括将校验时间开销最小化。
按本发明的一个实施例，可在将该子群聚束至少量字线之后执行擦除校验操作，以进一步减少切换时间开销。
按本发明的另一个实施例，在读电平和擦除校验电平之间，或在读电平和擦除校验及编程校验电平之间，可增加一个设定的电平差。
按本发明的另一个实施例，该方法可进一步包括，向单元集合的两个或两个以上的子群施加擦除脉冲，但并不对所有的子群执行校验操作。
按本发明的一个实施例，该方法可进一步包括，保证一定量的比特达到设定电平，而且单元集合通过擦除校验的概率很高，而只需对单元的一个子群实际执行擦除校验。
按本发明的一个实施例，该方法可进一步包括，在完成擦除校验之后，另外施加擦除脉冲。
按本发明的一个实施例，完成擦除校验的该单元集合的子群可以在包括单元集合本身的单元集合的任何一个子群之间，有规律地、周期性地或随机地从一个擦除操作向另一个擦除操作改变。
附图说明
结合附图和下文的详细说明，可更好地理解本发明。
图1是现有技术中通过隧道效应增强热孔注入擦除NROM单元的简图；
图2是现有技术中典型的NROM单元在循环前后的擦除曲线，显示出擦除操作的退化；
图3是现有技术中以NROM为基础的存储器产品的擦除电压和步计数简图，该擦除电压和步计数是在装置上执行编程/擦除操作(循环计数)的数量的函数；
图4A和4B是按本发明的实施例，被分区为子部分的存储器阵列上的单元集合的实施例的简化示意图；
图4C是按照本发明的一个实施例，擦除非易失存储单元阵列上存储单元的比特的方法的简化流程图；
图5是按照本发明的一个实施例，阈电压在NROM阵列的子群上分布的简化图，该阈电压是子群规模的函数；
图6A是通过现有技术中，用传统方法擦除和编程单元的阈电压的统计分布简图；
图6B是按照本发明的一个实施例，擦除单元的阈电压的统计分布简图；
图7A是按照本发明的一个实施例，被编程擦除的单元集合的示意简图，图中余量损失因单元集合的子群之间的不匹配而引起；
图7B是按照本发明的一个实施例，补偿因单元集合的子群之间的不匹配而引起的余量损失的流程图；
图8是按照本发明的一个实施例，被编程的NROM单元的两个子群之间的阈电压分布的
实施例的简化图。
具体实施方式
为对单元集合分区而使用了一些术语，参照图4A和4B可以更好理解这些术语，前述两图是按照本发明的一个实施例，在被分区成子部分的存储器阵列上的单元集合的实施例。图4A是在被分区成子部分12(本案中通过DQ)的存储器阵列上的单元集合10的一个实施例，和一个将被擦除校验(而不是对整个单元集合)的子群14，包括所有子部分12上的单元，下文将对此详述。子部分12和子群14可为任何形式。图4B是将单元集合10分区成子部分。在此例中，通过字线将单元集合10分区成子单元16。
参考图4C，该图是按照本发明的一个实施例，擦除非易失存储单元阵列上存储单元的比特的方法。
可选择一个擦除脉冲来擦除单元的比特，包括选择(拨入)一个负的栅压(Vg或Vcvpn-来自电荷激励的电压)和一个正的漏压(Vppd)(步骤401)。电压值的典型范围如下，Vg从-3V到-7V，Vppd从3V到7V，但不限于此，其持续时间为100-1000微秒。其后则可向单元集合施加擦除脉冲(步骤402)。
按本发明的一个实施例，不是对整个单元集合，而是对单元集合的一个被擦除的子群进行擦除校验操作(步骤403)。通过擦除校验操作检查存储单元阈电压(Vt)是否低于擦除校验(EV)电压水平。该单元集合的子群在典型意义上可包括存储单元集合的所有子部分中的单元，其通过应用体系结构来定义，例如连接到不同的读出放大器(参照子部分DQ)的物理阵列切片。
如果被擦除的单元集合的被校验的子群上的子部分单元均未通过擦除校验，就通过一个强(例如，大)增量设定一个新的Vppd电平(拨入)(步骤404)。如果有子部分通过擦除校验，就通过一个弱(例如，相对较小的)增量设定一个新的Vppd电平(步骤405)。直到来自子群的所有单元通过擦除校验(通过EV)，才可向单元集合的子部分施加擦除脉冲，该子群属于被校验的子群(步骤406)。一旦子群中的所有单元均通过擦除校验，就结束擦除操作，而不再检查单元集合的其他子群(步骤407)。当然也可对剩余的子群进行检查以确认其已确实被擦除(步骤408)。尽管如此，单元集合仍可能接收到一个比最后一个脉冲的电平更高的擦除脉冲以确保完全擦除，提高可靠性，例如，在美国专利6700818和美国专利申请20050117395及20050058005中即是如此。正常情况下，应按单元集合的子部分来向单元集施加该额外脉冲，例如，基于使得DQ通过擦除校验的(或者那些实际通过校验的单元)擦除脉冲电平，而向不同的DQ施加脉冲。
这样校验操作的数量就可减少，且可更快完成擦除操作。此外，如果子群限制在包括被擦除的单元集合的全部字线中的少数几个字线上，切换时间开销(从0V到校验栅压，然后返回)也可大幅减少。
进行擦除校验的单元集合的子群可在包括单元集合本身的所有子群之间，从一个擦除操作到另一个擦除操作，有规律地、周期性地或随机地轮替。
这种部分校验方案依赖于被擦除地单元集合的均匀性方能成功。例如，参照图5，该图是在一个NROM阵列的子群的阈电压分布，其为子群规模的函数。图中是一个基本一致的实施例，其中所有的单元和单元之间的变化实际上是随机的，其分布为高斯分布。这就可以把子群的擦除速度(要求能擦除该子群中最慢的单元)和整个单元集合的擦除速度关联起来。也就是说，可以在这样一个单元子群上进行擦除校验，而无需在全部单元上进行擦除校验。但是，因为擦除校验并没有在所有单元上执行，在执行擦除校验的子群和其他单元之间存在某种不匹配现象，其详如下。
参照图6A和6B。图6A是通过现有技术中的传统方法进行擦除和编程的单元的阈电压的统计分布。被擦除单元具有高斯分布，其中所有单元均低于擦除校验电平(曲线A)。类似地，被编程单元可以具有高斯分布，其中所有单元均高于编程校验电平(曲线B)。
相反，图6B是按照本发明提供的方法擦除的单元的阈电压统计分布图(曲线C)。如上所述，因为没有在所有的单元上执行擦除校验，在执行过擦除校验的子群和其他单元之间存在某些不匹配。不匹配的原因是单元阈电压分布的统计特性。如果被擦除的比特数量增加，阈电压分布就会变得更宽(如，曲线C就比曲线A宽)。这意味着，单个比特超出其周围子群的分布的可能性增加。该不匹配可使得某些单元不能达到擦除校验电平(曲线C的右半部分在擦除校验电平之上)。
参考图7A和7B。为解决这种不匹配，在产品操作窗口中，要在擦除电平和读电平之间设定一个额外的差值。编程校验电平则任意改变，但其与读电平之间的差值不能减小。可额外或选择采用附加脉冲机制(如在美国专利6700818，和美国专利申请20050117395及20050058005中，或背景技术部分中提及的其他技术)，并将其设定为一个更强的值，以确保所有单元均低于擦除校验电平，即，完全擦除。如前所述，另一种选择是把子群聚束成更少的字线以进一步减少切换时间开销。
如果在存储器阵列中存在固定的差异，可以通过将擦除操作分区成子群来处理，以将其在单元擦除中最小化。相应地，阵列集上的单元的动态将更为一致(如，在循环后保持不变)。但是，既然不匹配的子群需要被单独校验，额外的分区就需要额外的擦除校验操作。尽管如此，也不必对所有单元进行校验。
由于本发明提供的擦除校验方案是基于统计学规律的，因此可以忽略概率分布的“噪声边缘”以提高精度。参考图8，该图是同一阵列的被编程的NROM单元上具有同样历史记录的两个子群的阈电压分布图。该分布的叠加程度很高，但仍存在具有最低阈电压的单元，这些单元决定可正确读出单元内容的读操作的最高参考电平，其电压偏差为200mV(在5.45V和5.65V)。但是，如果应用了某电平，其使得至少八个比特不能被正确读出(在此情形下，被读出的被编程比特被擦除了)，两个子群之间的电平差即为50mV(5.65V和5.75V)。当然，使用八比特作为触发机制，仅仅是一个实施例，本发明不限于此。相应地，本发明的擦除校验机制可使得数量为X的比特(X＞1；例如，一般是X＝8)通过一个预设电平，从而大幅度减小噪声分布散乱，并使得整个单元集合完全被擦除(通过擦除校验)的可能性极大，即使实际上只在单元子群上进行过校验。
虽然前面结合一些特定实施例对本发明进行了阐述，但很明显，本领域的技术人员在此还可以有很多其他选择、修正和变化。相应地，本发明包含所有这类选择、修正和变化。

Claims (11)

1、一种擦除存储器阵列上存储单元的方法，该方法包括：
对存储器阵列上的单元集合的比特施加擦除脉冲，并仅对被擦除的单元集合的一个子群进行擦除校验操作，以检查存储单元阈电压(Vt)是否降低至擦除校验(EV)电压水平，如果是，则停止向单元集合施加擦除脉冲。
2、根据权利要求1所述的方法，其中，仅在对该子群进行擦除校验后才完成整个单元集合的擦除校验。
3、根据权利要求1所述的方法，其中，对该子群进行擦除校验使其电平低于目标擦除校验电压水平，以保证即使没有对全部单元进行校验，整个单元集合仍被擦除。
4、根据权利要求1所述的方法，其中，还包括将校验时间开销最小化。
5、根据权利要求1所述的方法，其中，在将所述子群聚束至少量字线后执行擦除校验操作，以进一步减少切换时间开销。
6、根据权利要求1所述的方法，其中，还包括在读电平和擦除校验电平间增加一设定差值。
7、根据权利要求1所述的方法，其中，还包括在读电平和擦除校验电平及编程校验电平间增加一设定差值。
8、根据权利要求1所述的方法，其中，还包括向所述单元集合的两个或两个以上子群施加擦除脉冲，但不对所有所述子群执行擦除校验操作。
9、根据权利要求1所述的方法，其中，还包括确保一定数量的比特通过一设定电平，并使得整个单元集合通过擦除校验的可能性提高，即使只对单元的一个子群进行实际上的校验。
10、根据权利要求1所述的方法，其中，还包括在完成擦除校验后施加额外擦除脉冲。
11、根据权利要求1所述的方法，其中，该被擦除校验的单元集合的子群可以在包括单元集合的子群之间，从一个擦除操作到另一擦除操作，有规律地、周期性地或随机地轮替。
CNA2006100059960A 2005-01-19 2006-01-18 擦除存储器阵列上存储单元的方法 Pending CN1838328A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US64456905P 2005-01-19 2005-01-19
US60/644569 2005-01-19

Publications (1)

Publication Number Publication Date
CN1838328A true CN1838328A (zh) 2006-09-27

Family

ID=36143177

Family Applications (3)

Application Number Title Priority Date Filing Date
CNA2006100059975A Pending CN1838323A (zh) 2005-01-19 2006-01-18 可预防固定模式编程的方法
CNA2006100059960A Pending CN1838328A (zh) 2005-01-19 2006-01-18 擦除存储器阵列上存储单元的方法
CNA2006100054168A Pending CN1822233A (zh) 2005-01-19 2006-01-19 一种擦除一个或多个非易失存储器单元的方法、电路和系统

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CNA2006100059975A Pending CN1838323A (zh) 2005-01-19 2006-01-18 可预防固定模式编程的方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CNA2006100054168A Pending CN1822233A (zh) 2005-01-19 2006-01-19 一种擦除一个或多个非易失存储器单元的方法、电路和系统

Country Status (4)

Country Link
US (3) US7468926B2 (zh)
EP (3) EP1684307A1 (zh)
JP (3) JP2006228407A (zh)
CN (3) CN1838323A (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102385918A (zh) * 2010-08-26 2012-03-21 三星电子株式会社 非易失性存储器件、其操作方法以及包括其的存储系统
CN110838329A (zh) * 2018-08-17 2020-02-25 北京兆易创新科技股份有限公司 一种存储器的擦除方法和系统

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070103980A1 (en) * 2005-11-10 2007-05-10 Gert Koebernick Method for operating a semiconductor memory device and semiconductor memory device
EP2070090B1 (en) 2006-09-08 2014-01-08 SanDisk Technologies Inc. Pseudo random and command driven bit compensation for the cycling effects in flash memory and methods therefor
US7606966B2 (en) 2006-09-08 2009-10-20 Sandisk Corporation Methods in a pseudo random and command driven bit compensation for the cycling effects in flash memory
US7734861B2 (en) * 2006-09-08 2010-06-08 Sandisk Corporation Pseudo random and command driven bit compensation for the cycling effects in flash memory
US7885112B2 (en) * 2007-09-07 2011-02-08 Sandisk Corporation Nonvolatile memory and method for on-chip pseudo-randomization of data within a page and between pages
US7619934B2 (en) * 2006-12-20 2009-11-17 Spansion Llc Method and apparatus for adaptive memory cell overerase compensation
US8127200B2 (en) 2006-12-24 2012-02-28 Sandisk Il Ltd. Flash memory device and system with randomizing for suppressing errors
US8370561B2 (en) * 2006-12-24 2013-02-05 Sandisk Il Ltd. Randomizing for suppressing errors in a flash memory
WO2008078314A1 (en) * 2006-12-24 2008-07-03 Sandisk Il Ltd Flash memory device, system and method with randomizing for suppressing error
JP4498370B2 (ja) * 2007-02-14 2010-07-07 株式会社東芝 データ書き込み方法
JP2008217857A (ja) * 2007-02-28 2008-09-18 Toshiba Corp メモリコントローラ及び半導体装置
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7945050B2 (en) * 2007-09-28 2011-05-17 Intel Corporation Suppressing power supply noise using data scrambling in double data rate memory systems
US20090150595A1 (en) * 2007-10-24 2009-06-11 Avi Lavan Balanced programming rate for memory cells
JP4554660B2 (ja) * 2007-11-01 2010-09-29 株式会社コナミデジタルエンタテインメント 記憶処理装置、情報提供サーバ、動作方法、ならびに、プログラム
US7843728B2 (en) * 2007-11-20 2010-11-30 Kabushiki Kaisha Toshiba Nonvolatile semiconductor storage device
JP2009163782A (ja) * 2007-12-13 2009-07-23 Toshiba Corp 半導体記憶装置
US7995392B2 (en) 2007-12-13 2011-08-09 Kabushiki Kaisha Toshiba Semiconductor memory device capable of shortening erase time
JP5019611B2 (ja) * 2007-12-27 2012-09-05 株式会社東芝 メモリシステム
US8301912B2 (en) * 2007-12-31 2012-10-30 Sandisk Technologies Inc. System, method and memory device providing data scrambling compatible with on-chip copy operation
US7813169B2 (en) * 2008-01-18 2010-10-12 Qimonda Flash Gmbh Integrated circuit and method to operate an integrated circuit
KR101378365B1 (ko) 2008-03-12 2014-03-28 삼성전자주식회사 하이브리드 메모리 데이터 검출 장치 및 방법
KR101517185B1 (ko) * 2008-04-15 2015-05-04 삼성전자주식회사 메모리 시스템 및 그것의 동작 방법
US8154918B2 (en) * 2008-06-30 2012-04-10 Sandisk Il Ltd. Method for page- and block based scrambling in non-volatile memory
US8230158B2 (en) * 2008-08-12 2012-07-24 Micron Technology, Inc. Memory devices and methods of storing data on a memory device
US8130552B2 (en) * 2008-09-11 2012-03-06 Sandisk Technologies Inc. Multi-pass programming for memory with reduced data storage requirement
US8145855B2 (en) 2008-09-12 2012-03-27 Sandisk Technologies Inc. Built in on-chip data scrambler for non-volatile memory
WO2010030701A1 (en) * 2008-09-12 2010-03-18 Sandisk Corporation Built in on-chip data scrambler for non-volatile memory
US8429330B2 (en) 2008-09-12 2013-04-23 Sandisk Technologies Inc. Method for scrambling data in which scrambling data and scrambled data are stored in corresponding non-volatile memory locations
JP5492679B2 (ja) * 2009-06-30 2014-05-14 パナソニック株式会社 記憶装置およびメモリコントローラ
US8874825B2 (en) 2009-06-30 2014-10-28 Sandisk Technologies Inc. Storage device and method using parameters based on physical memory block location
US8036044B2 (en) * 2009-07-16 2011-10-11 Sandisk Technologies Inc. Dynamically adjustable erase and program levels for non-volatile memory
KR20110055178A (ko) * 2009-11-19 2011-05-25 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 메모리 시스템
US8130551B2 (en) 2010-03-31 2012-03-06 Sandisk Technologies Inc. Extra dummy erase pulses after shallow erase-verify to avoid sensing deep erased threshold voltage
KR20120002760A (ko) * 2010-07-01 2012-01-09 삼성전자주식회사 낸드 플래쉬 메모리의 동작 신뢰성을 향상시키는 데이터 기록 방법 및 데이터 기록 장치
US8953318B1 (en) * 2010-09-13 2015-02-10 The Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama In Huntsville Passive cooling systems and methods for electronics
US9009547B2 (en) 2011-01-27 2015-04-14 Apple Inc. Advanced programming verification schemes for analog memory cells
US9293194B2 (en) 2011-01-27 2016-03-22 Apple Inc. Programming and erasure schemes for analog memory cells
US8649200B2 (en) 2011-01-27 2014-02-11 Apple Inc. Enhanced programming and erasure schemes for analog memory cells
KR20120096212A (ko) * 2011-02-22 2012-08-30 삼성전자주식회사 비휘발성 메모리 장치, 메모리 컨트롤러, 및 이들의 동작 방법
WO2012117263A1 (en) * 2011-03-02 2012-09-07 Sandisk Il Ltd. Method of data storage in non-volatile memory
US8843693B2 (en) 2011-05-17 2014-09-23 SanDisk Technologies, Inc. Non-volatile memory and method with improved data scrambling
CN104067348B (zh) * 2012-01-24 2017-04-05 苹果公司 用于模拟存储器单元的编程及擦除方案
WO2013112332A1 (en) 2012-01-24 2013-08-01 Apple Inc. Enhanced programming and erasure schemes for analog memory cells
US9454493B1 (en) * 2012-05-04 2016-09-27 Amazon Technologies, Inc. Systems and methods for wiped storage devices
US9317217B1 (en) * 2012-05-04 2016-04-19 Amazon Technologies, Inc. Wiping and verifying storage devices
KR20130127234A (ko) 2012-05-14 2013-11-22 삼성전자주식회사 메모리의 구동 방법
US8787088B2 (en) 2012-06-29 2014-07-22 Sandisk Technologies Inc. Optimized erase operation for non-volatile memory with partially programmed block
US8971125B2 (en) * 2012-07-02 2015-03-03 Micron Technology, Inc. Erase operations with erase-verify voltages based on where in the erase operations an erase cycle occurs
US9292428B2 (en) 2012-09-05 2016-03-22 Kabushiki Kaisha Toshiba Memory system
KR101949987B1 (ko) * 2012-12-18 2019-02-20 에스케이하이닉스 주식회사 데이터 저장 장치 및 그것의 동작 방법
WO2014137928A2 (en) 2013-03-04 2014-09-12 Sandisk Technologies Inc. Dynamic erase depth for improved endurance of non-volatile memory
KR102218735B1 (ko) 2014-01-21 2021-02-23 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 메모리 시스템 및 그것의 소거 방법
CN104882166A (zh) * 2014-02-27 2015-09-02 北京兆易创新科技股份有限公司 Flash存储装置、擦除方法及编程方法
EP3210396A1 (en) 2014-10-20 2017-08-30 Axon Enterprise, Inc. Systems and methods for distributed control
US9343171B1 (en) 2015-02-09 2016-05-17 Sandisk Technologies Inc. Reduced erase-verify voltage for first-programmed word line in a memory device
US9236139B1 (en) 2015-02-11 2016-01-12 Sandisk Technologies Inc. Reduced current program verify in non-volatile memory
US9343160B1 (en) 2015-02-11 2016-05-17 Sandisk Technologies Inc. Erase verify in non-volatile memory
US10417122B2 (en) * 2015-09-30 2019-09-17 Seagate Technology Llc Data randomization using memory block access counts
US10580506B2 (en) 2017-12-07 2020-03-03 Micron Technology, Inc. Semiconductor memory device and erase method including changing erase pulse magnitude for a memory array
US10535412B2 (en) 2018-02-09 2020-01-14 Sandisk Technologies Llc Single pulse verification of memory cells
JP7163210B2 (ja) * 2019-02-13 2022-10-31 キオクシア株式会社 半導体記憶装置、メモリシステム及び不良検出方法
JP2020149745A (ja) 2019-03-13 2020-09-17 キオクシア株式会社 半導体記憶装置
US20210303715A1 (en) * 2020-03-25 2021-09-30 SK Hynix Inc. Data scrambler for memory systems and method thereof

Family Cites Families (236)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1392599A (en) 1971-07-28 1975-04-30 Mullard Ltd Semiconductor memory elements
US3881180A (en) 1971-11-30 1975-04-29 Texas Instruments Inc Non-volatile memory cell
US3895360A (en) 1974-01-29 1975-07-15 Westinghouse Electric Corp Block oriented random access memory
US4016588A (en) 1974-12-27 1977-04-05 Nippon Electric Company, Ltd. Non-volatile semiconductor memory device
US4017888A (en) 1975-12-31 1977-04-12 International Business Machines Corporation Non-volatile metal nitride oxide semiconductor device
US4151021A (en) 1977-01-26 1979-04-24 Texas Instruments Incorporated Method of making a high density floating gate electrically programmable ROM
US4145703A (en) 1977-04-15 1979-03-20 Supertex, Inc. High power MOS device and fabrication method therefor
US4173766A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory cell
US4173791A (en) 1977-09-16 1979-11-06 Fairchild Camera And Instrument Corporation Insulated gate field-effect transistor read-only memory array
US4373248A (en) * 1978-07-12 1983-02-15 Texas Instruments Incorporated Method of making high density semiconductor device such as floating gate electrically programmable ROM or the like
DE2832388C2 (de) 1978-07-24 1986-08-14 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen von MNOS- und MOS-Transistoren in Silizium-Gate-Technologie auf einem Halbleitersubstrat
US4360900A (en) 1978-11-27 1982-11-23 Texas Instruments Incorporated Non-volatile semiconductor memory elements
US4247861A (en) * 1979-03-09 1981-01-27 Rca Corporation High performance electrically alterable read-only memory (EAROM)
DE2923995C2 (de) 1979-06-13 1985-11-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Herstellen von integrierten MOS-Schaltungen mit MOS-Transistoren und MNOS-Speichertransistoren in Silizium-Gate-Technologie
JPS5656677A (en) 1979-10-13 1981-05-18 Toshiba Corp Semiconductor memory device
US4281397A (en) 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix
DE2947350A1 (de) 1979-11-23 1981-05-27 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von mnos-speichertransistoren mit sehr kurzer kanallaenge in silizium-gate-technologie
JPS56120166A (en) 1980-02-27 1981-09-21 Hitachi Ltd Semiconductor ic device and manufacture thereof
US4342102A (en) 1980-06-18 1982-07-27 Signetics Corporation Semiconductor memory array
US4380057A (en) 1980-10-27 1983-04-12 International Business Machines Corporation Electrically alterable double dense memory
US4521796A (en) 1980-12-11 1985-06-04 General Instrument Corporation Memory implant profile for improved channel shielding in electrically alterable read only memory semiconductor device
EP0056195B1 (en) 1980-12-25 1986-06-18 Fujitsu Limited Nonvolatile semiconductor memory device
US4448400A (en) 1981-07-13 1984-05-15 Eliyahou Harari Highly scalable dynamic RAM cell with self-signal amplification
US4404747A (en) 1981-07-29 1983-09-20 Schur, Inc. Knife and sheath assembly
US4389705A (en) 1981-08-21 1983-06-21 Mostek Corporation Semiconductor memory circuit with depletion data transfer transistor
US4388705A (en) 1981-10-01 1983-06-14 Mostek Corporation Semiconductor memory circuit
US4435786A (en) * 1981-11-23 1984-03-06 Fairchild Camera And Instrument Corporation Self-refreshing memory cell
US4494016A (en) 1982-07-26 1985-01-15 Sperry Corporation High performance MESFET transistor for VLSI implementation
US4527257A (en) 1982-08-25 1985-07-02 Westinghouse Electric Corp. Common memory gate non-volatile transistor memory
JPS5949022A (ja) 1982-09-13 1984-03-21 Toshiba Corp 多値論理回路
US4613956A (en) 1983-02-23 1986-09-23 Texas Instruments Incorporated Floating gate memory with improved dielectric
JPS59174080A (ja) * 1983-03-24 1984-10-02 Sony Corp テレビジヨン信号受信装置
US4769340A (en) 1983-11-28 1988-09-06 Exel Microelectronics, Inc. Method for making electrically programmable memory device by doping the floating gate by implant
US4725984A (en) 1984-02-21 1988-02-16 Seeq Technology, Inc. CMOS eprom sense amplifier
JPS60182174A (ja) 1984-02-28 1985-09-17 Nec Corp 不揮発性半導体メモリ
US5352620A (en) 1984-05-23 1994-10-04 Hitachi, Ltd. Method of making semiconductor device with memory cells and peripheral transistors
US4663645A (en) 1984-05-23 1987-05-05 Hitachi, Ltd. Semiconductor device of an LDD structure having a floating gate
US4907273A (en) * 1984-10-12 1990-03-06 Wiedemer John D High security pay television system
US4908834A (en) * 1984-10-12 1990-03-13 Wiedemer John D High security pay television system
US4665426A (en) 1985-02-01 1987-05-12 Advanced Micro Devices, Inc. EPROM with ultraviolet radiation transparent silicon nitride passivation layer
US4761764A (en) 1985-04-18 1988-08-02 Nec Corporation Programmable read only memory operable with reduced programming power consumption
US4667217A (en) 1985-04-19 1987-05-19 Ncr Corporation Two bit vertically/horizontally integrated memory cell
JPH0831789B2 (ja) * 1985-09-04 1996-03-27 沖電気工業株式会社 出力回路
US4742491A (en) 1985-09-26 1988-05-03 Advanced Micro Devices, Inc. Memory cell having hot-hole injection erase mode
US4760555A (en) 1986-04-21 1988-07-26 Texas Instruments Incorporated Memory array with an array reorganizer
JPH0828431B2 (ja) 1986-04-22 1996-03-21 日本電気株式会社 半導体記憶装置
US4758869A (en) 1986-08-29 1988-07-19 Waferscale Integration, Inc. Nonvolatile floating gate transistor structure
US5168334A (en) 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
US4780424A (en) 1987-09-28 1988-10-25 Intel Corporation Process for fabricating electrically alterable floating gate memory devices
US4870470A (en) 1987-10-16 1989-09-26 International Business Machines Corporation Non-volatile memory cell having Si rich silicon nitride charge trapping layer
US4839705A (en) 1987-12-16 1989-06-13 Texas Instruments Incorporated X-cell EEPROM array
JPH07120720B2 (ja) 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
US5159570A (en) 1987-12-22 1992-10-27 Texas Instruments Incorporated Four memory state EEPROM
US4888735A (en) 1987-12-30 1989-12-19 Elite Semiconductor & Systems Int'l., Inc. ROM cell and array configuration
US4857770A (en) 1988-02-29 1989-08-15 Advanced Micro Devices, Inc. Output buffer arrangement for reducing chip noise without speed penalty
US4941028A (en) 1988-08-10 1990-07-10 Actel Corporation Structure for protecting thin dielectrics during processing
JPH0271493A (ja) 1988-09-06 1990-03-12 Mitsubishi Electric Corp 半導体メモリ装置
US5042009A (en) 1988-12-09 1991-08-20 Waferscale Integration, Inc. Method for programming a floating gate memory device
US5293563A (en) * 1988-12-29 1994-03-08 Sharp Kabushiki Kaisha Multi-level memory cell with increased read-out margin
US5120672A (en) 1989-02-22 1992-06-09 Texas Instruments Incorporated Fabricating a single level merged EEPROM cell having an ONO memory stack substantially spaced from the source region
US5142495A (en) 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
DE3931596A1 (de) 1989-03-25 1990-10-04 Eurosil Electronic Gmbh Spannungsvervielfacherschaltung
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US4961010A (en) 1989-05-19 1990-10-02 National Semiconductor Corporation Output buffer for reducing switching induced noise
US5104819A (en) 1989-08-07 1992-04-14 Intel Corporation Fabrication of interpoly dielctric for EPROM-related technologies
US5081675A (en) * 1989-11-13 1992-01-14 Kitti Kittirutsunetorn System for protection of software in memory against unauthorized use
US5027321A (en) 1989-11-21 1991-06-25 Intel Corporation Apparatus and method for improved reading/programming of virtual ground EPROM arrays
US4992391A (en) * 1989-11-29 1991-02-12 Advanced Micro Devices, Inc. Process for fabricating a control gate for a floating gate FET
JP2697231B2 (ja) * 1990-03-12 1998-01-14 松下電器産業株式会社 Ｃａｔｖシステム
JPH043395A (ja) * 1990-04-20 1992-01-08 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5204835A (en) 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
EP0461904A3 (en) 1990-06-14 1992-09-09 Creative Integrated Systems, Inc. An improved semiconductor read-only vlsi memory
US5075245A (en) 1990-08-03 1991-12-24 Intel Corporation Method for improving erase characteristics of buried bit line flash EPROM devices without using sacrificial oxide growth and removal steps
US5091938B1 (en) * 1990-08-06 1997-02-04 Nippon Denki Home Electronics Digital data cryptographic system
US5289406A (en) * 1990-08-28 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Read only memory for storing multi-data
US5117389A (en) 1990-09-05 1992-05-26 Macronix International Co., Ltd. Flat-cell read-only-memory integrated circuit
KR920006991A (ko) * 1990-09-25 1992-04-28 김광호 반도체메모리 장치의 고전압발생회로
US5081371A (en) 1990-11-07 1992-01-14 U.S. Philips Corp. Integrated charge pump circuit with back bias voltage reduction
JP3002309B2 (ja) * 1990-11-13 2000-01-24 ウエハスケール インテグレーション， インコーポレイテッド 高速ｅｐｒｏｍアレイ
JP2987193B2 (ja) 1990-11-20 1999-12-06 富士通株式会社 半導体記憶装置
US5086325A (en) 1990-11-21 1992-02-04 Atmel Corporation Narrow width EEPROM with single diffusion electrode formation
US5094968A (en) 1990-11-21 1992-03-10 Atmel Corporation Fabricating a narrow width EEPROM with single diffusion electrode formation
JP2612969B2 (ja) 1991-02-08 1997-05-21 シャープ株式会社 半導体装置の製造方法
US5270979A (en) * 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
JPH04311900A (ja) 1991-04-10 1992-11-04 Sharp Corp 半導体読み出し専用メモリ
JP2930440B2 (ja) 1991-04-15 1999-08-03 沖電気工業株式会社 半導体集積回路
US5142496A (en) 1991-06-03 1992-08-25 Advanced Micro Devices, Inc. Method for measuring VT 's less than zero without applying negative voltages
US5245572A (en) 1991-07-30 1993-09-14 Intel Corporation Floating gate nonvolatile memory with reading while writing capability
JP2965415B2 (ja) 1991-08-27 1999-10-18 松下電器産業株式会社 半導体記憶装置
US5305262A (en) 1991-09-11 1994-04-19 Kawasaki Steel Corporation Semiconductor integrated circuit
US5175120A (en) 1991-10-11 1992-12-29 Micron Technology, Inc. Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors
JPH05110114A (ja) 1991-10-17 1993-04-30 Rohm Co Ltd 不揮発性半導体記憶素子
US5355178A (en) * 1991-10-24 1994-10-11 Eastman Kodak Company Mechanism for improving television display of still images using image motion-dependent filter
JP3358663B2 (ja) 1991-10-25 2002-12-24 ローム株式会社 半導体記憶装置およびその記憶情報読出方法
US5428568A (en) * 1991-10-30 1995-06-27 Mitsubishi Denki Kabushiki Kaisha Electrically erasable and programmable non-volatile memory device and a method of operating the same
US5338954A (en) 1991-10-31 1994-08-16 Rohm Co., Ltd. Semiconductor memory device having an insulating film and a trap film joined in a channel region
US5357134A (en) 1991-10-31 1994-10-18 Rohm Co., Ltd. Nonvolatile semiconductor device having charge trap film containing silicon crystal grains
JPH05129284A (ja) 1991-11-06 1993-05-25 Sony Corp プラズマＳｉＮ成膜条件の設定方法及び半導体装置の製造方法
US5260593A (en) 1991-12-10 1993-11-09 Micron Technology, Inc. Semiconductor floating gate device having improved channel-floating gate interaction
JP2564067B2 (ja) 1992-01-09 1996-12-18 株式会社東芝 センス回路を有する読み出し出力回路
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5293328A (en) * 1992-01-15 1994-03-08 National Semiconductor Corporation Electrically reprogrammable EPROM cell with merged transistor and optiumum area
JP2851962B2 (ja) * 1992-01-21 1999-01-27 シャープ株式会社 半導体読み出し専用メモリ
DE69231356T2 (de) * 1992-01-22 2000-12-28 Macronix Int Co Ltd Nichtflüchtige Speicherzelle und Anordnungsarchitektur
US5324675A (en) 1992-03-31 1994-06-28 Kawasaki Steel Corporation Method of producing semiconductor devices of a MONOS type
JPH05290584A (ja) * 1992-04-08 1993-11-05 Nec Corp 半導体記憶装置
WO1993024959A1 (en) * 1992-05-29 1993-12-09 Citizen Watch Co., Ltd. Semiconductor nonvolatile storage device, semiconductor device, and its manufacture method
JPH065823A (ja) 1992-06-19 1994-01-14 Toshiba Corp 不揮発性半導体記憶装置及びその使用方法
US5289412A (en) * 1992-06-19 1994-02-22 Intel Corporation High-speed bias-stabilized current-mirror referencing circuit for non-volatile memories
EP0596198B1 (en) * 1992-07-10 2000-03-29 Sony Corporation Flash eprom with erase verification and address scrambling architecture
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
JP3036565B2 (ja) 1992-08-28 2000-04-24 日本電気株式会社 不揮発性半導体記憶装置の製造方法
US5280420A (en) 1992-10-02 1994-01-18 National Semiconductor Corporation Charge pump which operates on a low voltage power supply
JP2825217B2 (ja) * 1992-11-11 1998-11-18 シャープ株式会社 フラッシュメモリ
US5418743A (en) * 1992-12-07 1995-05-23 Nippon Steel Corporation Method of writing into non-volatile semiconductor memory
JPH07114792A (ja) * 1993-10-19 1995-05-02 Mitsubishi Electric Corp 半導体記憶装置
US5515173A (en) * 1993-03-05 1996-05-07 Gemstar Developement Corporation System and method for automatically recording television programs in television systems with tuners external to video recorders
US5393701A (en) * 1993-04-08 1995-02-28 United Microelectronics Corporation Layout design to eliminate process antenna effect
JP3317459B2 (ja) * 1993-04-30 2002-08-26 ローム株式会社 不揮発性記憶素子およびこれを利用した不揮発性記憶装置、この記憶装置の駆動方法、ならびにこの記憶素子の製造方法
US5335198A (en) 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
US5350710A (en) 1993-06-24 1994-09-27 United Microelectronics Corporation Device for preventing antenna effect on circuit
US5400286A (en) * 1993-08-17 1995-03-21 Catalyst Semiconductor Corp. Self-recovering erase scheme to enhance flash memory endurance
US5666516A (en) * 1993-12-16 1997-09-09 International Business Machines Corporation Protected programmable memory cartridge having selective access circuitry
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
FR2715782B1 (fr) * 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire.
FR2715758B1 (fr) * 1994-01-31 1996-03-22 Sgs Thomson Microelectronics Bascule bistable non volatile programmable par la source, notamment pour circuit de redondance de mémoire.
TW241394B (en) * 1994-05-26 1995-02-21 Aplus Integrated Circuits Inc Flat-cell ROM and decoder
US5608679A (en) * 1994-06-02 1997-03-04 Intel Corporation Fast internal reference cell trimming for flash EEPROM memory
JP3725911B2 (ja) * 1994-06-02 2005-12-14 株式会社ルネサステクノロジ 半導体装置
EP0691729A3 (en) * 1994-06-30 1996-08-14 Sgs Thomson Microelectronics Charge pump circuit with feedback control
EP0696050B1 (en) * 1994-07-18 1998-10-14 STMicroelectronics S.r.l. EPROM and Flash-EEPROM non-volatile memory and method of manufacturing the same
JP3730272B2 (ja) * 1994-09-17 2005-12-21 株式会社東芝 不揮発性半導体記憶装置
US5612642A (en) * 1995-04-28 1997-03-18 Altera Corporation Power-on reset circuit with hysteresis
JPH08115597A (ja) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp 半導体ディスク装置
US5561714A (en) * 1994-12-12 1996-10-01 Tektronix, Inc. Scrambling system for serial digital video
US5599727A (en) * 1994-12-15 1997-02-04 Sharp Kabushiki Kaisha Method for producing a floating gate memory device including implanting ions through an oxidized portion of the silicon film from which the floating gate is formed
JP4183290B2 (ja) * 1994-12-27 2008-11-19 マクロニクス インターナショナル カンパニイ リミテッド ベリファイ機能を備えた不揮発性半導体装置
KR100566466B1 (ko) * 1995-01-31 2006-03-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체 메모리 장치
US5518942A (en) * 1995-02-22 1996-05-21 Alliance Semiconductor Corporation Method of making flash EPROM cell having improved erase characteristics by using a tilt angle implant
JPH08306196A (ja) * 1995-04-28 1996-11-22 Toshiba Corp 不揮発性半導体記憶装置
US6034896A (en) * 1995-07-03 2000-03-07 The University Of Toronto, Innovations Foundation Method of fabricating a fast programmable flash E2 PROM cell
US5751944A (en) * 1995-07-28 1998-05-12 Micron Quantum Devices, Inc. Non-volatile memory system having automatic cycling test function
JP3251164B2 (ja) * 1995-12-14 2002-01-28 シャープ株式会社 半導体装置及びその製造方法
KR100223747B1 (ko) * 1995-12-28 1999-10-15 김영환 고속 저잡음 출력 버퍼
US5712815A (en) * 1996-04-22 1998-01-27 Advanced Micro Devices, Inc. Multiple bits per-cell flash EEPROM capable of concurrently programming and verifying memory cells and reference cells
US5715193A (en) * 1996-05-23 1998-02-03 Micron Quantum Devices, Inc. Flash memory system and method for monitoring the disturb effect on memory cell blocks due to high voltage conditions of other memory cell blocks
WO2004090908A1 (ja) * 1996-06-11 2004-10-21 Nobuyoshi Takeuchi ベリファイ機能を有する不揮発性記憶装置
JPH1011990A (ja) * 1996-06-26 1998-01-16 Nkk Corp ベリファイ機能を有する不揮発性記憶装置
JP2882370B2 (ja) * 1996-06-28 1999-04-12 日本電気株式会社 半導体記憶装置
US6037627A (en) * 1996-08-02 2000-03-14 Seiko Instruments Inc. MOS semiconductor device
US5787484A (en) * 1996-08-08 1998-07-28 Micron Technology, Inc. System and method which compares data preread from memory cells to data to be written to the cells
US5717635A (en) * 1996-08-27 1998-02-10 International Business Machines Corporation High density EEPROM for solid state file
US5873113A (en) * 1996-09-24 1999-02-16 Altera Corporation System and method for programming eprom cells using shorter duration pulse(s) in repeating the programming process of a particular cell
JPH10133754A (ja) * 1996-10-28 1998-05-22 Fujitsu Ltd レギュレータ回路及び半導体集積回路装置
US5717632A (en) * 1996-11-27 1998-02-10 Advanced Micro Devices, Inc. Apparatus and method for multiple-level storage in non-volatile memories
TW318283B (en) * 1996-12-09 1997-10-21 United Microelectronics Corp Multi-level read only memory structure and manufacturing method thereof
US5870335A (en) * 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6028324A (en) * 1997-03-07 2000-02-22 Taiwan Semiconductor Manufacturing Company Test structures for monitoring gate oxide defect densities and the plasma antenna effect
JP4253052B2 (ja) * 1997-04-08 2009-04-08 株式会社東芝 半導体装置
TW381325B (en) * 1997-04-15 2000-02-01 United Microelectronics Corp Three dimensional high density deep trench ROM and the manufacturing method thereof
US5880620A (en) * 1997-04-22 1999-03-09 Xilinx, Inc. Pass gate circuit with body bias control
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US5867429A (en) * 1997-11-19 1999-02-02 Sandisk Corporation High density non-volatile flash memory without adverse effects of electric field coupling between adjacent floating gates
US5963465A (en) * 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6020241A (en) * 1997-12-22 2000-02-01 Taiwan Semiconductor Manufacturing Company Post metal code engineering for a ROM
US6148435A (en) * 1997-12-24 2000-11-14 Cypress Semiconductor Corporation Optimized programming/erase parameters for programmable devices
US6292490B1 (en) * 1998-01-14 2001-09-18 Skystream Corporation Receipts and dispatch timing of transport packets in a video program bearing stream remultiplexer
US6351474B1 (en) * 1998-01-14 2002-02-26 Skystream Networks Inc. Network distributed remultiplexer for video program bearing transport streams
US6195368B1 (en) * 1998-01-14 2001-02-27 Skystream Corporation Re-timing of video program bearing streams transmitted by an asynchronous communication link
US6195196B1 (en) * 1998-03-13 2001-02-27 Fuji Photo Film Co., Ltd. Array-type exposing device and flat type display incorporating light modulator and driving method thereof
US6030871A (en) * 1998-05-05 2000-02-29 Saifun Semiconductors Ltd. Process for producing two bit ROM cell utilizing angled implant
US6188211B1 (en) * 1998-05-13 2001-02-13 Texas Instruments Incorporated Current-efficient low-drop-out voltage regulator with improved load regulation and frequency response
US6348711B1 (en) * 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6034403A (en) * 1998-06-25 2000-03-07 Acer Semiconductor Manufacturing, Inc. High density flat cell mask ROM
JO2117B1 (en) * 1998-07-15 2000-05-21 كانال + تيكنولوجيز سوسيته انونيم A method and device for the secure communication of information between a group of audio-visual devices that operate with numbers
EP0987715B1 (en) * 1998-09-15 2005-02-09 STMicroelectronics S.r.l. Method for maintaining the memory of non-volatile memory cells
US6044019A (en) * 1998-10-23 2000-03-28 Sandisk Corporation Non-volatile memory with improved sensing and method therefor
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6587315B1 (en) * 1999-01-20 2003-07-01 Alps Electric Co., Ltd. Magnetoresistive-effect device with a magnetic coupling junction
US6346442B1 (en) * 1999-02-04 2002-02-12 Tower Semiconductor Ltd. Methods for fabricating a semiconductor chip having CMOS devices and a fieldless array
US6181597B1 (en) * 1999-02-04 2001-01-30 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells with serial read operations
US6337502B1 (en) * 1999-06-18 2002-01-08 Saifun Semicinductors Ltd. Method and circuit for minimizing the charging effect during manufacture of semiconductor devices
JP3438669B2 (ja) * 1999-09-14 2003-08-18 日本電気株式会社 移動通信端末装置及びその制御方法並びにその制御プログラムを記録した記録媒体
JP2001101870A (ja) * 1999-09-30 2001-04-13 Fujitsu Ltd 半導体集積回路
US6181605B1 (en) * 1999-10-06 2001-01-30 Advanced Micro Devices, Inc. Global erase/program verification apparatus and method
US6175523B1 (en) * 1999-10-25 2001-01-16 Advanced Micro Devices, Inc Precharging mechanism and method for NAND-based flash memory devices
US7039614B1 (en) * 1999-11-09 2006-05-02 Sony Corporation Method for simulcrypting scrambled data to a plurality of conditional access devices
JP2001143487A (ja) * 1999-11-15 2001-05-25 Nec Corp 半導体記憶装置
JP4360736B2 (ja) * 2000-01-27 2009-11-11 株式会社ルネサステクノロジ 不揮発性半導体記憶装置および不揮発性半導体記憶装置のデータ消去方法
US6185143B1 (en) * 2000-02-04 2001-02-06 Hewlett-Packard Company Magnetic random access memory (MRAM) device including differential sense amplifiers
US6343033B1 (en) * 2000-02-25 2002-01-29 Advanced Micro Devices, Inc. Variable pulse width memory programming
WO2001080238A1 (en) * 2000-04-05 2001-10-25 Infineon Technologies North America Corp. Improved read/write channel
US6292394B1 (en) * 2000-06-29 2001-09-18 Saifun Semiconductors Ltd. Method for programming of a semiconductor memory cell
JP4707803B2 (ja) * 2000-07-10 2011-06-22 エルピーダメモリ株式会社 エラーレート判定方法と半導体集積回路装置
US6519182B1 (en) * 2000-07-10 2003-02-11 Advanced Micro Devices, Inc. Using hot carrier injection to control over-programming in a non-volatile memory cell having an oxide-nitride-oxide (ONO) structure
US6563741B2 (en) * 2001-01-30 2003-05-13 Micron Technology, Inc. Flash memory device and method of erasing
US6898037B2 (en) * 2001-02-20 2005-05-24 Seagate Technology Llc Optical equipment assemblies and techniques
US6348381B1 (en) * 2001-02-21 2002-02-19 Macronix International Co., Ltd. Method for forming a nonvolatile memory with optimum bias condition
DE10110150A1 (de) * 2001-03-02 2002-09-19 Infineon Technologies Ag Verfahren zum Herstellen von metallischen Bitleitungen für Speicherzellenarrays, Verfahren zum Herstellen von Speicherzellenarrays und Speicherzellenarray
US6351415B1 (en) * 2001-03-28 2002-02-26 Tower Semiconductor Ltd. Symmetrical non-volatile memory array architecture without neighbor effect
US6677805B2 (en) * 2001-04-05 2004-01-13 Saifun Semiconductors Ltd. Charge pump stage with body effect minimization
US6493266B1 (en) * 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6438037B1 (en) * 2001-05-09 2002-08-20 Advanced Micro Devices, Inc. Threshold voltage compacting for non-volatile semiconductor memory designs
US6522585B2 (en) * 2001-05-25 2003-02-18 Sandisk Corporation Dual-cell soft programming for virtual-ground memory arrays
EP1262995B1 (en) * 2001-05-30 2010-01-27 STMicroelectronics S.r.l. A semiconductor memory system
JP2002367380A (ja) * 2001-06-05 2002-12-20 Sony Corp 不揮発性半導体メモリ装置
US6512701B1 (en) * 2001-06-21 2003-01-28 Advanced Micro Devices, Inc. Erase method for dual bit virtual ground flash
US6462387B1 (en) * 2001-06-29 2002-10-08 Chinatech Corporation High density read only memory
US6525969B1 (en) * 2001-08-10 2003-02-25 Advanced Micro Devices, Inc. Decoder apparatus and methods for pre-charging bit lines
US6614689B2 (en) * 2001-08-13 2003-09-02 Micron Technology, Inc. Non-volatile memory having a control mini-array
US6981188B2 (en) * 2001-08-16 2005-12-27 Tower Semiconductor Ltd. Non-volatile memory device with self test
JP2003068086A (ja) * 2001-08-28 2003-03-07 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6549468B2 (en) * 2001-08-30 2003-04-15 Micron Technology, Inc. Non-volatile memory with address descrambling
ITRM20010556A1 (it) * 2001-09-12 2003-03-12 Micron Technology Inc Decodificatore per decodificare i comandi di commutazione a modo di test di circuiti integrati.
EP1293905A1 (en) * 2001-09-17 2003-03-19 STMicroelectronics S.r.l. A pointer circuit
US6440797B1 (en) * 2001-09-28 2002-08-27 Advanced Micro Devices, Inc. Nitride barrier layer for protection of ONO structure from top oxide loss in a fabrication of SONOS flash memory
US6510082B1 (en) * 2001-10-23 2003-01-21 Advanced Micro Devices, Inc. Drain side sensing scheme for virtual ground flash EPROM array with adjacent bit charge and hold
US6643181B2 (en) * 2001-10-24 2003-11-04 Saifun Semiconductors Ltd. Method for erasing a memory cell
US6639271B1 (en) * 2001-12-20 2003-10-28 Advanced Micro Devices, Inc. Fully isolated dielectric memory cell structure for a dual bit nitride storage device and process for making same
US6674138B1 (en) * 2001-12-31 2004-01-06 Advanced Micro Devices, Inc. Use of high-k dielectric materials in modified ONO structure for semiconductor devices
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US7190620B2 (en) * 2002-01-31 2007-03-13 Saifun Semiconductors Ltd. Method for operating a memory device
FR2835521B1 (fr) * 2002-02-04 2004-04-09 Inst Francais Du Petrole Composition catalytique contenant un aluminoxane pour la dimerisation, la co-dimerisation et l'oligomerisation des olefines
WO2003073431A1 (fr) * 2002-02-28 2003-09-04 Renesas Technology Corp. Memoire a semi-conducteurs non volatile
JP3891863B2 (ja) * 2002-03-07 2007-03-14 松下電器産業株式会社 半導体装置及び半導体装置の駆動方法
US6706595B2 (en) * 2002-03-14 2004-03-16 Advanced Micro Devices, Inc. Hard mask process for memory device without bitline shorts
US6587383B1 (en) * 2002-03-19 2003-07-01 Micron Technology, Inc. Erase block architecture for non-volatile memory
US6690602B1 (en) * 2002-04-08 2004-02-10 Advanced Micro Devices, Inc. Algorithm dynamic reference programming
CN1292356C (zh) * 2002-04-17 2006-12-27 松下电器产业株式会社 非易失性半导体存储装置及其机密保护方法
JP4260434B2 (ja) * 2002-07-16 2009-04-30 富士通マイクロエレクトロニクス株式会社 不揮発性半導体メモリ及びその動作方法
US6813189B2 (en) * 2002-07-16 2004-11-02 Fujitsu Limited System for using a dynamic reference in a double-bit cell memory
JP2004079602A (ja) * 2002-08-12 2004-03-11 Fujitsu Ltd トラップ層を有する不揮発性メモリ
US6992932B2 (en) * 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US7447667B2 (en) * 2002-12-11 2008-11-04 International Business Machines Corporation Method and knowledge structures for reasoning about concepts, relations, and rules
WO2005015775A1 (en) * 2003-08-11 2005-02-17 Nortel Networks Limited System and method for embedding ofdm in cdma systems
US7447847B2 (en) * 2004-07-19 2008-11-04 Micron Technology, Inc. Memory device trims

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102385918A (zh) * 2010-08-26 2012-03-21 三星电子株式会社 非易失性存储器件、其操作方法以及包括其的存储系统
CN102385918B (zh) * 2010-08-26 2017-04-12 三星电子株式会社 非易失性存储器件、其操作方法以及包括其的存储系统
CN110838329A (zh) * 2018-08-17 2020-02-25 北京兆易创新科技股份有限公司 一种存储器的擦除方法和系统
CN110838329B (zh) * 2018-08-17 2022-04-01 北京兆易创新科技股份有限公司 一种存储器的擦除方法和系统

Also Published As

Publication number Publication date
US20060158940A1 (en) 2006-07-20
JP2006228406A (ja) 2006-08-31
EP1684307A1 (en) 2006-07-26
JP2006228407A (ja) 2006-08-31
EP1686592A2 (en) 2006-08-02
US7468926B2 (en) 2008-12-23
US20060181934A1 (en) 2006-08-17
JP2006228405A (ja) 2006-08-31
EP1684308A1 (en) 2006-07-26
US20060158938A1 (en) 2006-07-20
CN1822233A (zh) 2006-08-23
CN1838323A (zh) 2006-09-27
US7369440B2 (en) 2008-05-06
EP1686592A3 (en) 2007-04-25

Similar Documents

Publication Publication Date Title
CN1838328A (zh) 擦除存储器阵列上存储单元的方法
US8305812B2 (en) Flash memory module and method for programming a page of flash memory cells
KR100953045B1 (ko) 불휘발성 메모리 장치의 프로그램 방법
EP2417602B1 (en) Two pass erase for non-volatile storage
CN101584006B (zh) 非易失性存储器中的经分割的软编程
US7564718B2 (en) Method for programming a block of memory cells, non-volatile memory device and memory card device
US9330767B1 (en) Flash memory module and method for programming a page of flash memory cells
CN102959634B (zh) 用于减小存储器中的编程噪声的锯齿形多脉冲编程
CN1770326A (zh) 电荷捕获非易失性存储器的编程操作方法
CN1679117A (zh) 多级存储器的编程方法
CN1819055A (zh) 非易失性存储器存储单元读取方法
CN1825484A (zh) 一种存储设备的操作方法
CN1864231A (zh) 内存装置以及使用正栅极应力以回复过度擦除存储单元的方法
CN1575496A (zh) 块擦除的非易失性存储器
US20100027348A1 (en) Program method of flash memory device
CN1945743A (zh) 降低擦除时间及防止过擦除之擦除方法
CN1692448A (zh) 在存储器装置中恢复超擦比特的方法
JP3965287B2 (ja) 不揮発性半導体記憶装置およびその書き込み時間決定方法
KR20020042753A (ko) 불휘발성반도체기억장치
US8576630B2 (en) Non-volatile memory device with plural reference cells, and method of setting the reference cells
US6188613B1 (en) Device and method in a semiconductor memory for erasing/programming memory cells using erase/program speeds stored for each cell
EP3891748B1 (en) Method for programming in non-volatile memory device by applying multiple bitline bias voltages
US6023426A (en) Method of achieving narrow VT distribution after erase in flash EEPROM
US20100226171A1 (en) Method of programming nonvolatile memory device
TWI699772B (zh) 在步進編程脈衝操作中決定快速通過寫入操作的方法與系統

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication