DE102005013537A1 - Fotoelektrischer Wandler und Herstellverfahren für einen solchen - Google Patents

Fotoelektrischer Wandler und Herstellverfahren für einen solchen Download PDF

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Publication number
DE102005013537A1
DE102005013537A1 DE102005013537A DE102005013537A DE102005013537A1 DE 102005013537 A1 DE102005013537 A1 DE 102005013537A1 DE 102005013537 A DE102005013537 A DE 102005013537A DE 102005013537 A DE102005013537 A DE 102005013537A DE 102005013537 A1 DE102005013537 A1 DE 102005013537A1
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DE
Germany
Prior art keywords
type semiconductor
semiconductor layer
photoelectric converter
manufacturing
dollar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102005013537A
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English (en)
Inventor
Kazuhito Nishimura
Yoshiyuki Nasuno
Hiroshi Yamamoto
Yoshitaka Sugita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004086811A external-priority patent/JP4441298B2/ja
Priority claimed from JP2004257181A external-priority patent/JP4215697B2/ja
Priority claimed from JP2004308381A external-priority patent/JP4441377B2/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE102005013537A1 publication Critical patent/DE102005013537A1/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

Es wird ein fotoelektrischer Wandler (100) angegeben, der mit Folgendem versehen ist: DOLLAR A - einer fotoelektrischen pin-Wandlungsschicht (10) aus einer p-Halbleiterschicht (12), einer i-Halbleiterschicht (13) und einer n-Halbleiterschicht (14); DOLLAR A - wobei die p-Halbleiterschicht Siliciumatome und Stickstoffatome enthält. DOLLAR A Mit diesem Aufbau ist es möglich, einen hohen fotoelektrischen Wandlungswirkungsgrad zu erzielen.
DE102005013537A 2004-03-24 2005-03-23 Fotoelektrischer Wandler und Herstellverfahren für einen solchen Withdrawn DE102005013537A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004086811A JP4441298B2 (ja) 2004-03-24 2004-03-24 光電変換装置およびその製造方法
JP2004257181A JP4215697B2 (ja) 2004-09-03 2004-09-03 光電変換装置およびその製造方法
JP2004308381A JP4441377B2 (ja) 2004-10-22 2004-10-22 光電変換装置およびその製造方法

Publications (1)

Publication Number Publication Date
DE102005013537A1 true DE102005013537A1 (de) 2005-10-20

Family

ID=35034263

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102005013537A Withdrawn DE102005013537A1 (de) 2004-03-24 2005-03-23 Fotoelektrischer Wandler und Herstellverfahren für einen solchen

Country Status (3)

Country Link
US (2) US7915520B2 (de)
KR (1) KR100642196B1 (de)
DE (1) DE102005013537A1 (de)

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KR101602252B1 (ko) * 2008-06-27 2016-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터, 반도체장치 및 전자기기
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IT201600096823A1 (it) * 2016-09-27 2018-03-27 Enel Green Power Spa Dispositivo a cella solare e metodo di produzione dello stesso
JP6896672B2 (ja) * 2018-03-21 2021-06-30 株式会社東芝 半導体装置及びその製造方法
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Also Published As

Publication number Publication date
US20050229965A1 (en) 2005-10-20
US7915520B2 (en) 2011-03-29
KR100642196B1 (ko) 2006-11-06
KR20060044699A (ko) 2006-05-16
US20110146773A1 (en) 2011-06-23

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Effective date: 20140528