DE3023165A1 - Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface - Google Patents

Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface

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Publication number
DE3023165A1
DE3023165A1 DE19803023165 DE3023165A DE3023165A1 DE 3023165 A1 DE3023165 A1 DE 3023165A1 DE 19803023165 DE19803023165 DE 19803023165 DE 3023165 A DE3023165 A DE 3023165A DE 3023165 A1 DE3023165 A1 DE 3023165A1
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Germany
Prior art keywords
solar cell
thin film
cell according
amorphous silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803023165
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German (de)
Other versions
DE3023165C2 (en
Inventor
Helmold Dipl.-Phys. 8000 München Kausche
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Siemens AG
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Siemens AG
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Priority to DE19803023165 priority Critical patent/DE3023165A1/en
Publication of DE3023165A1 publication Critical patent/DE3023165A1/en
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Publication of DE3023165C2 publication Critical patent/DE3023165C2/de
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Abstract

The thin Si film is located on a reflecting substrate, which consists of an Al film with a matt reflecting surface. The surface of the Al film is pref. roughened; and the Al is pref. located on a carrier, which is made of an insulator or metal, esp. glass; ceramic; Al; steel; Al or steel coated with an insulating film; a metal foil; or a polymer foil. The reflecting Al substrate is pref. 0.5 microns in average thickness, with a surface roughness of ca. 0.5 microns; and this substrate is pref. formed by sputtering at 150 deg. C in argon onto the carrier. High efficiency is obtd., where the highest possible amt. of the incident light is converted into electrical energy.

Description

Solarzelle aus amorphem SiliziumAmorphous silicon solar cell

Die Erfindung betrifft eine Solarzelle aus amorphem Silizium, bei der eine amorphe Silizium-Dünnschicht auf einem reflektierenden Substrat vorgesehen ist.The invention relates to a solar cell made of amorphous silicon which provided an amorphous silicon thin film on a reflective substrate is.

Photovoltaische Solarzellen sollen bekanntlich möglichst viel Licht in der wirksamen Halbleiterschicht absorbieren, also eine geringe Reflexion nach außen besitzen, um so einen hohen Wirkungsgrad aufzuweisen. Zur Erhöhung des Wirkungsgrades wird daher die der Lichtelnfallseite gegenüberliegende Rückseitenelektrode zumeist spiegelnd ausgeführt, damit das einfallende Licht die Halbleiterschicht wenigstens zweimal durchlaufen kann. Bei einer optimalen Schichtenfolge und einer zweckmäßigen Oberflächengeometrie wird so praktisch das gesamte einfallende Licht durch Absorption in der Halbleiterschicht mit einem pn-Übergang oder einem Schottky-Ubergang aufgenommen.It is well known that photovoltaic solar cells should have as much light as possible absorb in the effective semiconductor layer, so a low reflection after have the outside so as to have a high degree of efficiency. To increase the efficiency is therefore mostly the rear side electrode opposite to the light incident side Specifically designed so that the incident light at least the semiconductor layer can go through twice. With an optimal sequence of layers and an appropriate one The surface geometry becomes practically all of the incident light through absorption recorded in the semiconductor layer with a pn junction or a Schottky junction.

Diese Lösung arbeitet zwar befriedigend, sie ist jedoch für amorphes Silizium infolge ihres hohen Aufwandes wenig zweckmäßig.Although this solution works satisfactorily, it is for amorphous ones Silicon is not very useful due to its high expenditure.

Um den Wirkungsgrad zu erhöhen, wurde daher bereits daran gedacht, die Oberfläche so zu gestalten, daß die wirksame Oberfläche durch Aufrauhung vergrößert ist.In order to increase the efficiency, thought has therefore already been given to to design the surface so that the effective surface is increased by roughening is.

Diese rauhere Oberfläche streut dann das Licht in Vorwärtsrichtung in die Halbleiterschicht derart, daß das Licht mehrfach die wirksame Halbleiterschicht durchsetzen kann. Auf diese Weise wird beispielsweise bei sogenannten schwarzen Silizium-Einkristallzellen vorgegangen, die durch spezielles Ätzen der Siliziumscheibe hergestellt sind. Das gleiche gilt auch für das sogenannte Lichtbogenspritzen der Schichten durch das sich ebenfalls gezielt rauhe Oberflächen herstellen lassen (vergleiche US-PS 4 166 880).This rougher surface then scatters the light in the forward direction into the semiconductor layer in such a way that the light multiples the effective semiconductor layer can enforce. In this way, for example, with so-called black Silicon single crystal cells proceeded, those by special etching the silicon wafer are made. The same applies to what is known as arc spraying of the layers through which rough surfaces can also be produced in a targeted manner (See U.S. Patent 4,166,880).

Es ist daher Aufgabe der Erfindung eine aus amorphem Silizium bestehende Solarzelle mit hohem Wirkungsgrad anzugeben, die einen möglichst großen Teil des einfallenden Lichtes in elektrische Energie umsetzt.It is therefore an object of the invention to consist of amorphous silicon Specify solar cell with high efficiency, which as large as possible of the converts incident light into electrical energy.

Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß das Substrat eine mattglänzende Aluminiumschicht ist.According to the invention, this object is achieved in that the substrate is a matt-finished aluminum layer.

Die Erfindung schafft für Solarzellen aus amorphem Silizium ein passendes Substrat, das auf einfache Weise herstellbar ist. Hierzu wird eine mattglänzende Aluminiumschicht vorgesehen, die auf ebenen Unterlagen durch Sputtern oder Aufdampfen vorzugsweise bei höheren Abscheidetemperaturen in der Größenordnung von einigen 100 0C mit im /um-Bereich einstellbarer Oberflächenkörnung am Band reproduzierbar herstellbar ist. Die Aluminiumschicht kann auch durch höhere Abscheidetemperaturen und eine größere Schichtdicke so aufgerauht werden, daß sehr wenig Licht austritt. Aluminium reflektiert dann aber immer noch in mikroskopischen Bereichen das Licht sehr gut, so daß eine optimale Ausnutzung der einfallenden Strahlung gewährleistet ist.The invention creates a suitable one for solar cells made of amorphous silicon Substrate that can be produced in a simple manner. For this purpose, a matt glossy Aluminum layer provided, which is on flat surfaces by sputtering or vapor deposition preferably at higher deposition temperatures of the order of a few 100 0C reproducible with adjustable surface grain size on the belt can be produced. The aluminum layer can also be caused by higher deposition temperatures and a greater layer thickness can be roughened so that very little light escapes. However, aluminum still reflects the light in microscopic areas very good, so that an optimal utilization of the incident radiation is guaranteed is.

Für die Herstellung mattglänzender Aluminiumschichten kann beim Sputtern eine HF-Diode verwendet werden. Dabei wird die Unterlage, auf die die Aluminiumschicht aufgebracht wird, in einem Raum mit einem Druck von 1 N/m2 in einer Argon-Atmosphäre auf 150 0C erwärmt. Die von der HF-Diode aufgenommene Leistung beträgt etwa 800 W. Das Sputtern wird dabei während 5 Minuten durchgeführt.For the production of matt-gloss aluminum layers, sputtering an RF diode can be used. This is the base on which the aluminum layer is applied in a room with a pressure of 1 N / m2 in an argon atmosphere heated to 150 0C. The power consumed by the RF diode is around 800 W. The sputtering is carried out for 5 minutes.

Bei einer Ringentladung liegt in einem Raum von 250 0C und und einem Druck von 0,1 NIm in einer Argon-Atmosphäre an der Diode ein Strom von 2 A und eine Spannung von 600 V während etwa 10 Minuten. Die mittlere Schichtdicke der so erzeugten Aluminiumschichten beträgt etwa 5 /um bei einem Rauhigkeitsgrad der Oberfläche von etwa 0,5 /um.In the case of a ring discharge, there is and and one in a space of 250 ° C Pressure of 0.1 Nm in an argon atmosphere at the diode, a current of 2 A and a Voltage of 600 V for about 10 minutes. The mean layer thickness of the Aluminum layers is about 5 / µm with a surface roughness of about 0.5 / µm.

Als Unterlagen für das Aufsputtern der Aluminiumschicht eignen sich isolierende oder metallische Hartsubstrate, wie beispielsweise Glas, Keramik oder Aluminium-, Stahl-oder andere Bleche, die gegebenenfalls auch mit Isolierschichten überzogen sein können. Weiterhin sind flexible bandförmige Substrate in der Form von Metall- oder Kunststoffolien anwendbar.Suitable as bases for the sputtering of the aluminum layer insulating or metallic hard substrates, such as glass, ceramic or Aluminum, steel or other sheet metal, optionally with insulating layers can be overdone. Furthermore, flexible tape-shaped substrates are in the form of metal or plastic foils can be used.

Nachfolgend wird ein Ausführungsbeispiel der erfindungsgemäßen Solarzelle an Hand der einzigen Fig. der Zeichnung erläutert: Auf einer Unterlage 1 aus beispielsweise einer Polyimidfolie befindet sich eine durch Sputtern aufgetragene mattglänzende Aluminiumschicht 2, die eine Schichtdicke von etwa 0,5 /um aufweist. Auf dieser mattglänzenden Aluminiumschicht 2 kann gegebenenfalls über eine Chromschicht (nicht gezeigt) eine aus amorphem Silizium bestehende Schicht 3 vorgesehen sein, die pn-Übergänge 4 oder aus Platin bestehende Schottky-Zellen aufweist.An exemplary embodiment of the solar cell according to the invention is described below Explained on the basis of the single figure of the drawing: On a base 1 from, for example a polyimide film is a matt-glossy film applied by sputtering Aluminum layer 2, which has a layer thickness of about 0.5 / µm. On this matt-gloss aluminum layer 2 can optionally over a chrome layer (not shown) a layer 3 consisting of amorphous silicon may be provided, the pn junctions 4 or made of platinum Schottky cells.

Weiterhin ist ein Kontaktgitter 5 aus Nickel vorgesehen, das zusammen mit der Aluminiumschicht 2 zur Kontaktgabe der Siliziumschicht 3 dient.Furthermore, a contact grid 5 made of nickel is provided, which together is used with the aluminum layer 2 to make contact with the silicon layer 3.

1 Figur 9 Patentansprüche Leerseite1 Figure 9 claims Blank page

Claims (9)

Patentansprüche Solarzelle aus amorphem Silizium, bei der eine amorphe Silizium-Dünnschicht auf einem reflektierenden Substrat vorgesehen ist, d a d u r c h g e k e n n -z e i c h n e t , daß das Substrat (2) eine mattglänzende Aluminiumschicht ist.Claims Solar cell made of amorphous silicon, in which an amorphous Silicon thin film is provided on a reflective substrate, d a d u It is noted that the substrate (2) has a matt-gloss aluminum layer is. 2. Solarzelle nach Anspruch 1, d a d u r c h g e -k e n n z e i c h n e t , daß die Oberfläche der Aluminiumschicht aufgerauht ist.2. Solar cell according to claim 1, d a d u r c h g e -k e n n z e i c This means that the surface of the aluminum layer is roughened. 3. Solarzelle nach Anspruch 1 oder 2, d a d u r c h g e k e n n z e i c h n e t , daß die Aluminiumschicht auf einer Unterlage (1) angeordnet ist.3. Solar cell according to claim 1 or 2, d a d u r c h g e k e n n z e i c h n e t that the aluminum layer is arranged on a base (1). 4. Solarzelle nach Anspruch 3, d a d u r c h g e -k e n n z e i c h n e t , daß die Unterlage (1) aus einem isolierenden oder metallischen Material besteht.4. Solar cell according to claim 3, d a d u r c h g e -k e n n z e i c h n e t that the base (1) is made of an insulating or metallic material consists. 5. Solarzelle nach Anspruch 4, d a d u r c h g e -k e n n z e i c h n e t , daß die Unterlage (1) aus Glas oder Keramik oder Aluminium oder Stahl besteht.5. Solar cell according to claim 4, d a d u r c h g e -k e n n z e i c n e t that the base (1) made of glass or ceramic or aluminum or steel consists. 6. Solarzelle nach Anspruch 5, d a d u r c h g e -k e n n z e i c h n e t , daß eine aus Aluminium oder Stahl bestehende Unterlage (1) mit einer Isolierschicht überzogen ist.6. Solar cell according to claim 5, d a d u r c h g e -k e n n z e i c This means that a base (1) made of aluminum or steel with an insulating layer is covered. 7. Solarzelle nach Anspruch 4, d a d u r c h g e -k e n n z e i c h n e t , daß die Unterlage (1) aus einer Metallfolie oder einer Kunststoffolie besteht.7. Solar cell according to claim 4, d a d u r c h g e -k e n n z e i c h n e t that the base (1) consists of a metal foil or a plastic film consists. 8. Solarzelle nach Anspruch 2, d a d u r c h g e -k e n n z e i c h n e t , daß die mittlere Schicht- dicke der Aluminiumschicht (2) etwa 0,5 /um und der Rauhigkeitsgrad von deren Oberfläche etwa 0,5 /um beträgt.8. Solar cell according to claim 2, d a d u r c h g e -k e n n z e i c n e t that the middle class thickness of the aluminum layer (2) about 0.5 / µm and the degree of roughness of the surface thereof is about 0.5 / µm. 9. Verfahren zum Herstellen der Solarzelle nach einem der Ansprüche 1 bis 8, d a d u r c h g e k e n n -z e i c h n e t , daß die Aluminiumschicht (2) durch Sputtern bei etwa 150 0C in einer Argonatmosphäre auf die Unterlage aufgebracht wird.9. A method for producing the solar cell according to one of the claims 1 to 8, that the aluminum layer (2) applied to the substrate by sputtering at about 150 ° C. in an argon atmosphere will.
DE19803023165 1980-06-20 1980-06-20 Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface Granted DE3023165A1 (en)

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2522880A1 (en) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc PHOTOVOLTAIC DEVICE COMPRISING MEANS FOR DIRECTING INCIDENT RADIATION FOR TOTAL INTERNAL REFLECTION
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
FR2533755A1 (en) * 1982-09-27 1984-03-30 Rca Corp PHOTODETECTOR AND MANUFACTURING METHOD THEREOF
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION
US4492813A (en) * 1982-11-19 1985-01-08 Siemens Aktiengesellschaft Amorphous silicon solar cell
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
DE3528087A1 (en) * 1984-08-06 1986-02-13 Showa Aluminum Corp., Sakai, Osaka SUBSTRATE FOR SOLAR CELLS MADE OF AMORPHIC SILICON
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
DE3626450A1 (en) * 1986-08-05 1988-02-11 Hans Joachim Dipl P Kirschning Component of edifices and buildings which acts as a solar cell
DE102009033771A1 (en) * 2009-07-17 2011-04-07 Schünemann, Gerhard Solar reflector for installation on e.g. flat saddle or monopitch roofs of building, has reflector surface reflecting sunlight on photovoltaic panels of photovoltaic systems, where reflector surface is designed as strewing reflector surface

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DE2631880A1 (en) * 1975-07-18 1977-03-31 Futaba Denshi Kogyo Kk Schottky barrier thin film semiconductor - for solar cells, produced by ionized agglomerate vapour deposition
DE2812547A1 (en) * 1977-03-28 1978-10-05 Rca Corp PHOTO ELEMENT
DE2715471A1 (en) * 1977-04-06 1978-10-19 Siemens Ag Solar cell with semiconductor layer - vacuum deposited on a reflecting substrate
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
DE2854653A1 (en) * 1978-04-24 1979-10-31 Rca Corp SOLAR CELL

Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
DE2631880A1 (en) * 1975-07-18 1977-03-31 Futaba Denshi Kogyo Kk Schottky barrier thin film semiconductor - for solar cells, produced by ionized agglomerate vapour deposition
DE2812547A1 (en) * 1977-03-28 1978-10-05 Rca Corp PHOTO ELEMENT
DE2715471A1 (en) * 1977-04-06 1978-10-19 Siemens Ag Solar cell with semiconductor layer - vacuum deposited on a reflecting substrate
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
DE2854653A1 (en) * 1978-04-24 1979-10-31 Rca Corp SOLAR CELL

Non-Patent Citations (1)

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Title
US-Z: IEEE Transactions on Electron Devices, Bd. ED-27, No. 4, April 1980, S. 662-670 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306148A1 (en) * 1982-03-03 1983-09-15 Energy Conversion Devices, Inc., 48084 Troy, Mich. BARRIER PHOTO ELEMENT MADE OF SEMICONDUCTOR MATERIAL
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
FR2522880A1 (en) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc PHOTOVOLTAIC DEVICE COMPRISING MEANS FOR DIRECTING INCIDENT RADIATION FOR TOTAL INTERNAL REFLECTION
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
FR2533755A1 (en) * 1982-09-27 1984-03-30 Rca Corp PHOTODETECTOR AND MANUFACTURING METHOD THEREOF
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
US4492813A (en) * 1982-11-19 1985-01-08 Siemens Aktiengesellschaft Amorphous silicon solar cell
US4511756A (en) * 1982-11-19 1985-04-16 Siemens Aktiengesellschaft Amorphous silicon solar cells and a method of producing the same
EP0111750A3 (en) * 1982-11-19 1985-10-16 Siemens Aktiengesellschaft Amorphous silicium solar cell and method of manufacturing the same
EP0111750A2 (en) * 1982-11-19 1984-06-27 Siemens Aktiengesellschaft Amorphous silicium solar cell and method of manufacturing the same
DE3242831A1 (en) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
DE3528087A1 (en) * 1984-08-06 1986-02-13 Showa Aluminum Corp., Sakai, Osaka SUBSTRATE FOR SOLAR CELLS MADE OF AMORPHIC SILICON
US4806436A (en) * 1984-08-06 1989-02-21 Showa Aluminum Corporation Substrate for amorphous silicon solar cells
DE3626450A1 (en) * 1986-08-05 1988-02-11 Hans Joachim Dipl P Kirschning Component of edifices and buildings which acts as a solar cell
DE102009033771A1 (en) * 2009-07-17 2011-04-07 Schünemann, Gerhard Solar reflector for installation on e.g. flat saddle or monopitch roofs of building, has reflector surface reflecting sunlight on photovoltaic panels of photovoltaic systems, where reflector surface is designed as strewing reflector surface

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