DE3023165A1 - Solarzelle aus amorphem silizium - Google Patents

Solarzelle aus amorphem silizium

Info

Publication number
DE3023165A1
DE3023165A1 DE19803023165 DE3023165A DE3023165A1 DE 3023165 A1 DE3023165 A1 DE 3023165A1 DE 19803023165 DE19803023165 DE 19803023165 DE 3023165 A DE3023165 A DE 3023165A DE 3023165 A1 DE3023165 A1 DE 3023165A1
Authority
DE
Germany
Prior art keywords
solar cell
thin film
cell according
amorphous silicon
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19803023165
Other languages
German (de)
English (en)
Other versions
DE3023165C2 (un
Inventor
Helmold Dipl.-Phys. 8000 München Kausche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19803023165 priority Critical patent/DE3023165A1/de
Publication of DE3023165A1 publication Critical patent/DE3023165A1/de
Application granted granted Critical
Publication of DE3023165C2 publication Critical patent/DE3023165C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
DE19803023165 1980-06-20 1980-06-20 Solarzelle aus amorphem silizium Granted DE3023165A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19803023165 DE3023165A1 (de) 1980-06-20 1980-06-20 Solarzelle aus amorphem silizium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19803023165 DE3023165A1 (de) 1980-06-20 1980-06-20 Solarzelle aus amorphem silizium

Publications (2)

Publication Number Publication Date
DE3023165A1 true DE3023165A1 (de) 1982-01-07
DE3023165C2 DE3023165C2 (un) 1991-05-29

Family

ID=6105065

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19803023165 Granted DE3023165A1 (de) 1980-06-20 1980-06-20 Solarzelle aus amorphem silizium

Country Status (1)

Country Link
DE (1) DE3023165A1 (un)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2522880A1 (fr) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc Dispositif photovoltaique comprenant des moyens permettant de diriger les radiations incidentes en vue d'une reflexion interne totale
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
FR2533755A1 (fr) * 1982-09-27 1984-03-30 Rca Corp Photodetecteur et son procede de fabrication
DE3242831A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung
US4492813A (en) * 1982-11-19 1985-01-08 Siemens Aktiengesellschaft Amorphous silicon solar cell
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
DE3528087A1 (de) * 1984-08-06 1986-02-13 Showa Aluminum Corp., Sakai, Osaka Substrat fuer solarzellen aus amorphem silicium
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
DE3626450A1 (de) * 1986-08-05 1988-02-11 Hans Joachim Dipl P Kirschning Als solarzelle wirkendes bauteil von bauwerken und gebaeuden
DE102009033771A1 (de) * 2009-07-17 2011-04-07 Schünemann, Gerhard Solarreflektor zur Leistungssteigerung von Photovoltaikanlagen und Verwendung eines solchen Solarreflektors

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631880A1 (de) * 1975-07-18 1977-03-31 Futaba Denshi Kogyo Kk Halbleiterbauelement mit schottky- sperrschicht und verfahren zu seiner herstellung
DE2812547A1 (de) * 1977-03-28 1978-10-05 Rca Corp Fotoelement
DE2715471A1 (de) * 1977-04-06 1978-10-19 Siemens Ag Solarzelle
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
DE2854653A1 (de) * 1978-04-24 1979-10-31 Rca Corp Solarzelle

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2631880A1 (de) * 1975-07-18 1977-03-31 Futaba Denshi Kogyo Kk Halbleiterbauelement mit schottky- sperrschicht und verfahren zu seiner herstellung
DE2812547A1 (de) * 1977-03-28 1978-10-05 Rca Corp Fotoelement
DE2715471A1 (de) * 1977-04-06 1978-10-19 Siemens Ag Solarzelle
US4166880A (en) * 1978-01-18 1979-09-04 Solamat Incorporated Solar energy device
DE2854653A1 (de) * 1978-04-24 1979-10-31 Rca Corp Solarzelle

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
US-Z: IEEE Transactions on Electron Devices, Bd. ED-27, No. 4, April 1980, S. 662-670 *

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3306148A1 (de) * 1982-03-03 1983-09-15 Energy Conversion Devices, Inc., 48084 Troy, Mich. Sperrschicht-fotoelement aus halbleitermaterial
US4419533A (en) * 1982-03-03 1983-12-06 Energy Conversion Devices, Inc. Photovoltaic device having incident radiation directing means for total internal reflection
FR2522880A1 (fr) * 1982-03-03 1983-09-09 Energy Conversion Devices Inc Dispositif photovoltaique comprenant des moyens permettant de diriger les radiations incidentes en vue d'une reflexion interne totale
US4554727A (en) * 1982-08-04 1985-11-26 Exxon Research & Engineering Company Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces
EP0103168A2 (en) * 1982-09-10 1984-03-21 Hitachi, Ltd. Amorphous silicon solar battery
EP0103168A3 (en) * 1982-09-10 1986-07-02 Hitachi, Ltd. Amorphous silicon solar battery
FR2533755A1 (fr) * 1982-09-27 1984-03-30 Rca Corp Photodetecteur et son procede de fabrication
US4532537A (en) * 1982-09-27 1985-07-30 Rca Corporation Photodetector with enhanced light absorption
US4663188A (en) * 1982-09-27 1987-05-05 Rca Corporation Method for making a photodetector with enhanced light absorption
US4492813A (en) * 1982-11-19 1985-01-08 Siemens Aktiengesellschaft Amorphous silicon solar cell
US4511756A (en) * 1982-11-19 1985-04-16 Siemens Aktiengesellschaft Amorphous silicon solar cells and a method of producing the same
EP0111750A3 (en) * 1982-11-19 1985-10-16 Siemens Aktiengesellschaft Amorphous silicium solar cell and method of manufacturing the same
EP0111750A2 (de) * 1982-11-19 1984-06-27 Siemens Aktiengesellschaft Solarzelle aus amorphem Silizium und Verfahren zu ihrer Herstellung
DE3242831A1 (de) * 1982-11-19 1984-05-24 Siemens AG, 1000 Berlin und 8000 München Solarzelle aus amorphem silizium und verfahren zu ihrer herstellung
US4514583A (en) * 1983-11-07 1985-04-30 Energy Conversion Devices, Inc. Substrate for photovoltaic devices
DE3528087A1 (de) * 1984-08-06 1986-02-13 Showa Aluminum Corp., Sakai, Osaka Substrat fuer solarzellen aus amorphem silicium
US4806436A (en) * 1984-08-06 1989-02-21 Showa Aluminum Corporation Substrate for amorphous silicon solar cells
DE3626450A1 (de) * 1986-08-05 1988-02-11 Hans Joachim Dipl P Kirschning Als solarzelle wirkendes bauteil von bauwerken und gebaeuden
DE102009033771A1 (de) * 2009-07-17 2011-04-07 Schünemann, Gerhard Solarreflektor zur Leistungssteigerung von Photovoltaikanlagen und Verwendung eines solchen Solarreflektors

Also Published As

Publication number Publication date
DE3023165C2 (un) 1991-05-29

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8120 Willingness to grant licences paragraph 23
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee