DE3023165C2 - - Google Patents
Info
- Publication number
- DE3023165C2 DE3023165C2 DE19803023165 DE3023165A DE3023165C2 DE 3023165 C2 DE3023165 C2 DE 3023165C2 DE 19803023165 DE19803023165 DE 19803023165 DE 3023165 A DE3023165 A DE 3023165A DE 3023165 C2 DE3023165 C2 DE 3023165C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- solar cell
- aluminum
- base
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910000831 Steel Inorganic materials 0.000 claims description 3
- 239000012300 argon atmosphere Substances 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 3
- 239000007769 metal material Substances 0.000 claims description 3
- 239000010959 steel Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- 239000002985 plastic film Substances 0.000 claims description 2
- 229920006255 plastic film Polymers 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000011888 foil Substances 0.000 claims 1
- 210000004027 cell Anatomy 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021418 black silicon Inorganic materials 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Description
Die Erfindung betrifft eine Solarzelle aus Silizium, bei der eine Silizium-Dünnschicht auf einem mattglänzenden Substrat angeordnet ist, welches aus einer Unterlage aus einem metallischen oder isolierenden Material und einer darauf aufgebrachten Metallschicht besteht.The invention relates to a solar cell made of silicon, in which a thin layer of silicon on a matt gloss Is arranged substrate, which consists of a base from a metallic or insulating material and an applied thereon There is a metal layer.
Eine derartige Solarzelle ist aus der DE-OS 27 15 471 bekannt.Such a solar cell is known from DE-OS 27 15 471.
Fotovoltaische Solarzellen sollen bekanntlich möglichst viel Licht in der wirksamen Halbleiterschicht absorbieren, also eine geringe Reflexion nach außen besitzen, um so einen hohen Wirkungsgrad aufzuweisen. Zur Erhöhung des Wirkungsgrades wird daher die der Lichteinfallsseite gegenüberliegende Rückseitenelektrode zumeist spiegelnd ausgeführt, damit das einfallende Licht die Halbleiterschicht wenigstens zweimal durchlaufen kann. Ein Fotoelement mit einer Halbleiterschicht über einem aus Aluminium bestehenden reflektierenden Substrat ist z. B. aus der DE-OS 28 12 547 bekannt.As is known, photovoltaic solar cells should have as much as possible Absorb light in the effective semiconductor layer, that is have little outside reflection, so high To show efficiency. To increase efficiency hence the back electrode opposite the light incident side mostly mirrored, so that the incident Light pass through the semiconductor layer at least twice can. A photo element with a semiconductor layer over it aluminum reflective substrate is such. B. known from DE-OS 28 12 547.
Aus der DE 28 54 653 und aus der DE 26 31 880 sind Dünnschichtsolarzellen aus Silizium bekannt, deren Halbleiterschichten über aus Aluminium bestehenden Substratoberflächen aufgebracht sind.DE 28 54 653 and DE 26 31 880 are thin-film solar cells known from silicon, the semiconductor layers applied over substrate surfaces made of aluminum are.
Bei einer optimalen Schichtenfolge und einer zweckmäßigen Oberflächengeometrie wird praktisch das gesamte einfallende Licht duch Absorption in der Halbleiterschicht mit einem pn-Übergang oder einem Schottky-Übergang aufgenommen.With an optimal layer sequence and an appropriate one Surface geometry becomes practically the entire incident Light through absorption in the semiconductor layer with one pn transition or a Schottky transition added.
Diese Lösung arbeitet zwar befriedigend, sie ist jedoch für amorphes Silizium aufgrund ihres hohen Aufwandes wenig zweckmäßig.While this solution works satisfactorily, it is for Amorphous silicon is not very practical due to its high cost.
Um den Wirkungsgrad zu erhöhen, wurde daher bereits daran gedacht, die Oberfläche so zu gestalten, daß die wirksame Oberfläche aufgerauht und daher vergrößert ist. Diese rauhere Oberfläche streut dann das Licht in Vorwärtsrichtung in die Halbleiterschicht derart, daß das Licht mehrfach die wirksame Halbleiterschicht durchsetzen kann. Auf diese Weise wird beispielsweise bei sogenannten schwarzen Silizium-Einkristallzellen vorgegangen, die durch spezielles Ätzen der Siliziumscheibe hergestellt sind. Das gleiche gilt auch für das sogenannte Lichtbogenspritzen der Schichten, durch das sich ebenfalls gezielt rauhe Oberflächen herstellen lassen (vgl. US-PS 41 66 880).In order to increase the efficiency, it was therefore already considered to design the surface so that the effective surface roughened and therefore enlarged. This rougher The surface then scatters the light in the forward direction Semiconductor layer such that the light is several times the effective Can enforce semiconductor layer. This way, for example proceeded with so-called black silicon single crystal cells, which are produced by special etching of the silicon wafer are. The same applies to so-called arc spraying the layers through which also roughly targeted Allow surfaces to be produced (see US Pat. No. 4,166,880).
Aufgabe der vorliegenden Erfindung ist es daher, eine Solarzelle nach dem Oberbegriff des Anspruchs 1 bzw. ein Verfahren zur Herstellung einer Solarzelle aus amorphem Silizium nach dem Oberbegriff des Anspruchs 6 anzugeben, bei dem das Substrat auf einfache Weise und mit geringem Aufwand herstellbar ist und dennoch eine optimale Ausnutztung der einfallenden Sonnenstrahlung gewährleistet.The object of the present invention is therefore a solar cell according to the preamble of claim 1 or a method to manufacture a solar cell from amorphous silicon specify the preamble of claim 6, in which the Substrate can be produced in a simple manner and with little effort is and still optimal use of the incident Guaranteed solar radiation.
Diese Aufgabe wird erfindungsgemäß dadurch gelöst, daß die Silizium-Dünnschicht aus amorphem Silizium besteht und daß die Metallschicht eine Aluminiumschicht mit einer Oberflächenkörnung im Mikrometer-Bereich ist.This object is achieved in that the Silicon thin film consists of amorphous silicon and that the Metal layer an aluminum layer with a surface grain is in the micrometer range.
Ein Verfahren zur Herstellung einer solchen Solarzelle ist dem Anspruch 6 zu entnehmen.One method for producing such a solar cell is Claim 6.
Die Erfindung schafft für Solarzellen aus amorphem Silizium ein passendes Substrat, das auf einfache Weise herstellbar ist. Hierzu wird eine mattglänzende Aluminiumschicht vorgesehen, die auf ebenen Unterlagen durch Sputtern oder Aufdampfen, vorzugsweise bei höheren Abscheidetemperaturen, in der Größenordnung von einigen 100°C mit im µm-Bereich einstellbarer Oberflächenkörnung am Band reproduzierbar herstellbar ist. Die Aluminiumschicht kann auch durch höhere Abscheidetemperaturen und durch eine größere Schichtdicke so rauh aufgebracht werden, daß sehr wenig Licht austritt. Aluminium reflektiert dann aber immer noch in mikroskopischen Bereichen das Licht sehr gut, so daß eine optimale Ausnutzung der einfallenden Strahlung gewährleistet ist.The invention creates amorphous silicon for solar cells a suitable substrate that is easy to manufacture is. For this purpose, a matt glossy aluminum layer is provided, those on flat surfaces by sputtering or vapor deposition, preferably at higher deposition temperatures, in on the order of a few 100 ° C in the µm range adjustable surface grain on the belt can be produced reproducibly is. The aluminum layer can also be caused by higher deposition temperatures and because of a thicker layer be applied roughly so that very little light escapes. Aluminum then still reflects in microscopic Areas of light very well, so that optimal use the incident radiation is guaranteed.
Für die Herstellung mattglänzender Aluminiumschichten kann beim Sputtern eine HF-Diode verwendet werden. Dabei wird die Unterlage, auf die die Aluminiumschicht aufgebracht wird, in einem Raum mit einem Druck von 1 N/m² in einer Argon-Atmosphäre auf 150°C erwärmt. Die von der HF-Diode aufgenommene Leistung beträgt etwa 800 W. Das Sputtern wird dabei während fünf Minuten durchgeführt.For the production of matt aluminum layers an RF diode can be used for sputtering. The Support on which the aluminum layer is applied, in a room with a pressure of 1 N / m² in an argon atmosphere heated to 150 ° C. The one picked up by the RF diode Power is about 800 W. The sputtering is during five minutes.
Bei einer Ringentladung liegt in einem Raum von 250°C und einem Druck von 0,1 N/m² in einer Argon-Atmosphäre an der Diode ein Strom von 2 A und eine Spannung von 600 V während etwa 10 Minuten. Die mittlere Schichtdicke der so erzeugten Aluminiumschichten beträgt etwa 5 µm bei einem Rauhigkeitsgrad der Oberfläche von etwa 0,5 µm.With a ring discharge lies in a room of 250 ° C and a pressure of 0.1 N / m² in an argon atmosphere at the Diode a current of 2 A and a voltage of 600 V during about 10 minutes. The average layer thickness of the so produced Aluminum layers is about 5 µm with a degree of roughness the surface of about 0.5 µm.
Als Unterlage für das Aufsputtern der Aluminiumschicht eignen sich isolierende oder metallische Hartsubstrate, wie beispielsweise Glas, Keramik oder Aluminium-, Stahl- oder andere Bleche, die gegebenenfalls auch mit Isolierschichten überzogen sein können. Weiterhin sind flexible bandförmige Substrate in der Form von Metall- oder Kunststoffolien anwendbar.Suitable as a base for sputtering on the aluminum layer insulating or metallic hard substrates, such as for example glass, ceramic or aluminum, steel or other sheets, which may also be covered with insulating layers could be. Also flexible are band-shaped substrates applicable in the form of metal or plastic films.
Nachfolgend wird ein Ausführungsbeispiel der erfindungsgemäßen Solarzelle anhand der einzigen Figur erläutert:Below is an embodiment of the invention Solar cell explained using the single figure:
Auf einer Unterlage aus einer Polyimidfolie befindet sich eine durch Sputtern aufgetragene mattglänzende Aluminiumschicht 2, die eine Schichtdicke von etwa 0,5 µm aufweist. Auf dieser mattglänzenden Aluminiumschicht 2 kann gegebenenfalls über einer Chromschicht (nicht gezeigt) eine aus amorphem Silizium bestehende Schicht 3 vorgesehen sein, die pn-Übergänge 4 oder aus Platin bestehende Schottky-Zellen aufweist. Weiterhin ist ein Kontaktgitter 5 aus Nickel vorgesehen, das zusammen mit der Aluminiumschicht 2 zur Kontaktgabe der Siliziumschicht 3 dient.On a base made of a polyimide film there is a matt, glossy aluminum layer 2 applied by sputtering, which has a layer thickness of approximately 0.5 μm. A layer 3 made of amorphous silicon and having pn junctions 4 or Schottky cells consisting of platinum can optionally be provided on this matt-gloss aluminum layer 2 over a chrome layer (not shown). Furthermore, a contact grid 5 made of nickel is provided, which together with the aluminum layer 2 serves to make contact with the silicon layer 3 .
Claims (7)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803023165 DE3023165A1 (en) | 1980-06-20 | 1980-06-20 | Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19803023165 DE3023165A1 (en) | 1980-06-20 | 1980-06-20 | Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3023165A1 DE3023165A1 (en) | 1982-01-07 |
| DE3023165C2 true DE3023165C2 (en) | 1991-05-29 |
Family
ID=6105065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803023165 Granted DE3023165A1 (en) | 1980-06-20 | 1980-06-20 | Solar cell with high efficiency - using thin film of amorphous silicon on thin film of aluminium with matt reflecting surface |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE3023165A1 (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4419533A (en) * | 1982-03-03 | 1983-12-06 | Energy Conversion Devices, Inc. | Photovoltaic device having incident radiation directing means for total internal reflection |
| US4554727A (en) * | 1982-08-04 | 1985-11-26 | Exxon Research & Engineering Company | Method for making optically enhanced thin film photovoltaic device using lithography defined random surfaces |
| EP0103168A3 (en) * | 1982-09-10 | 1986-07-02 | Hitachi, Ltd. | Amorphous silicon solar battery |
| US4663188A (en) * | 1982-09-27 | 1987-05-05 | Rca Corporation | Method for making a photodetector with enhanced light absorption |
| US4532537A (en) * | 1982-09-27 | 1985-07-30 | Rca Corporation | Photodetector with enhanced light absorption |
| DE3242831A1 (en) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | AMORPHOUS SILICON SOLAR CELL AND METHOD FOR THEIR PRODUCTION |
| DE3242835A1 (en) * | 1982-11-19 | 1984-05-24 | Siemens AG, 1000 Berlin und 8000 München | AMORPHEMIC SILICON SOLAR CELL |
| US4514583A (en) * | 1983-11-07 | 1985-04-30 | Energy Conversion Devices, Inc. | Substrate for photovoltaic devices |
| DE3528087C2 (en) * | 1984-08-06 | 1995-02-09 | Showa Aluminum Corp | Substrate for amorphous silicon solar cells |
| DE3626450A1 (en) * | 1986-08-05 | 1988-02-11 | Hans Joachim Dipl P Kirschning | Component of edifices and buildings which acts as a solar cell |
| DE102009033771A1 (en) * | 2009-07-17 | 2011-04-07 | Schünemann, Gerhard | Solar reflector for installation on e.g. flat saddle or monopitch roofs of building, has reflector surface reflecting sunlight on photovoltaic panels of photovoltaic systems, where reflector surface is designed as strewing reflector surface |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2631880A1 (en) * | 1975-07-18 | 1977-03-31 | Futaba Denshi Kogyo Kk | Schottky barrier thin film semiconductor - for solar cells, produced by ionized agglomerate vapour deposition |
| EG13199A (en) * | 1977-03-28 | 1981-06-30 | Rca Corp | A photo volataic device having increased absorption efficiency |
| DE2715471A1 (en) * | 1977-04-06 | 1978-10-19 | Siemens Ag | Solar cell with semiconductor layer - vacuum deposited on a reflecting substrate |
| US4166880A (en) * | 1978-01-18 | 1979-09-04 | Solamat Incorporated | Solar energy device |
| US4167015A (en) * | 1978-04-24 | 1979-09-04 | Rca Corporation | Cermet layer for amorphous silicon solar cells |
-
1980
- 1980-06-20 DE DE19803023165 patent/DE3023165A1/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE3023165A1 (en) | 1982-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8120 | Willingness to grant licenses paragraph 23 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |