DE3063506D1 - A tantalum thin film capacitor and process for producing the same - Google Patents

A tantalum thin film capacitor and process for producing the same

Info

Publication number
DE3063506D1
DE3063506D1 DE8080302834T DE3063506T DE3063506D1 DE 3063506 D1 DE3063506 D1 DE 3063506D1 DE 8080302834 T DE8080302834 T DE 8080302834T DE 3063506 T DE3063506 T DE 3063506T DE 3063506 D1 DE3063506 D1 DE 3063506D1
Authority
DE
Germany
Prior art keywords
producing
thin film
same
film capacitor
tantalum thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080302834T
Other languages
English (en)
Inventor
Masataka Koyama
Kiyoshi Satoh
Minoru Terashima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11115879A external-priority patent/JPS5933246B2/ja
Priority claimed from JP5498580A external-priority patent/JPS6055975B2/ja
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3063506D1 publication Critical patent/DE3063506D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
    • H01L27/016—Thin-film circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/10—Metal-oxide dielectrics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE8080302834T 1979-08-31 1980-08-18 A tantalum thin film capacitor and process for producing the same Expired DE3063506D1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11115879A JPS5933246B2 (ja) 1979-08-31 1979-08-31 タンタル薄膜コンデンサ
JP5498580A JPS6055975B2 (ja) 1980-04-25 1980-04-25 タンタル薄膜コンデンサおよびその製造方法

Publications (1)

Publication Number Publication Date
DE3063506D1 true DE3063506D1 (en) 1983-07-07

Family

ID=26395815

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080302834T Expired DE3063506D1 (en) 1979-08-31 1980-08-18 A tantalum thin film capacitor and process for producing the same

Country Status (3)

Country Link
US (1) US4364099A (de)
EP (1) EP0024863B1 (de)
DE (1) DE3063506D1 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654207A (en) * 1903-02-03 1997-08-05 Sharp Kabushiki Kaisha Method of making two-terminal nonlinear device and liquid crystal apparatus including the same
US5019461A (en) * 1986-12-08 1991-05-28 Honeywell Inc. Resistive overlayer for thin film devices
JPH01211544A (ja) * 1988-02-19 1989-08-24 Mitsui Toatsu Chem Inc ビスフェノールａの製造方法
JPH03248568A (ja) * 1990-02-27 1991-11-06 Fuji Xerox Co Ltd 薄膜半導体装置
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
JPH0819516B2 (ja) * 1990-10-26 1996-02-28 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン 薄膜状のアルファＴａを形成するための方法および構造
JPH07283077A (ja) * 1994-04-11 1995-10-27 Ngk Spark Plug Co Ltd 薄膜コンデンサ
JP2919306B2 (ja) * 1995-05-31 1999-07-12 日本電気株式会社 低抵抗タンタル薄膜の製造方法及び低抵抗タンタル配線並びに電極
EP0751566A3 (de) 1995-06-30 1997-02-26 Ibm Metalldünnschichtbarriere für elektrische Verbindungen
US5717563A (en) * 1996-06-10 1998-02-10 Aerovox Incorporated Electrode patterning in metallized electrode capacitors
US6706156B1 (en) * 1996-09-06 2004-03-16 Seagate Technology Llc Method of making an improved MR sensor
US6075691A (en) * 1997-03-06 2000-06-13 Lucent Technologies Inc. Thin film capacitors and process for making them
TW417249B (en) * 1997-05-14 2001-01-01 Applied Materials Inc Reliability barrier integration for cu application
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6174811B1 (en) * 1998-12-02 2001-01-16 Applied Materials, Inc. Integrated deposition process for copper metallization
TW520551B (en) 1998-09-24 2003-02-11 Applied Materials Inc Method for fabricating ultra-low resistivity tantalum films
US6395148B1 (en) 1998-11-06 2002-05-28 Lexmark International, Inc. Method for producing desired tantalum phase
US6750500B1 (en) * 1999-01-05 2004-06-15 Micron Technology, Inc. Capacitor electrode for integrating high K materials
US6627542B1 (en) 1999-07-12 2003-09-30 Applied Materials, Inc. Continuous, non-agglomerated adhesion of a seed layer to a barrier layer
US6313033B1 (en) 1999-07-27 2001-11-06 Applied Materials, Inc. Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications
JP3376969B2 (ja) * 1999-09-02 2003-02-17 株式会社村田製作所 弾性表面波装置及びその製造方法
US6339527B1 (en) 1999-12-22 2002-01-15 International Business Machines Corporation Thin film capacitor on ceramic
US6562715B1 (en) 2000-08-09 2003-05-13 Applied Materials, Inc. Barrier layer structure for copper metallization and method of forming the structure
WO2002018653A2 (en) * 2000-08-28 2002-03-07 Applied Materials, Inc. Method for depositing nitride layers
WO2002025709A2 (en) 2000-09-21 2002-03-28 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
US7327582B2 (en) * 2000-09-21 2008-02-05 Ultrasource, Inc. Integrated thin film capacitor/inductor/interconnect system and method
US6890629B2 (en) * 2001-09-21 2005-05-10 Michael D. Casper Integrated thin film capacitor/inductor/interconnect system and method
US7425877B2 (en) * 2001-09-21 2008-09-16 Ultrasource, Inc. Lange coupler system and method
US6998696B2 (en) * 2001-09-21 2006-02-14 Casper Michael D Integrated thin film capacitor/inductor/interconnect system and method
EP1730072A2 (de) * 2004-03-24 2006-12-13 H.C. Starck Inc. Verfahren zur herstellung von alpha- und beta-tantalfilmen mit kontrollierten und neuen mikrostrukturen
US7445810B2 (en) * 2004-04-15 2008-11-04 Hewlett-Packard Development Company, L.P. Method of making a tantalum layer and apparatus using a tantalum layer
US7611912B2 (en) 2004-06-30 2009-11-03 Headway Technologies, Inc. Underlayer for high performance magnetic tunneling junction MRAM
US7416789B2 (en) * 2004-11-01 2008-08-26 H.C. Starck Inc. Refractory metal substrate with improved thermal conductivity
WO2008126365A1 (ja) * 2007-03-29 2008-10-23 Panasonic Corporation 不揮発性記憶装置、不揮発性記憶素子および不揮発性記憶素子アレイ
US8552529B2 (en) 2007-04-11 2013-10-08 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US20080251889A1 (en) * 2007-04-11 2008-10-16 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
US7969708B2 (en) * 2007-11-01 2011-06-28 Taiwan Semiconductor Company, Ltd. Alpha tantalum capacitor plate
EP2107136B1 (de) * 2008-03-31 2014-12-31 Permelec Electrode Ltd. Herstellungsverfahren für Elektroden für Elektrolyse

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3671823A (en) * 1971-07-01 1972-06-20 Bell Telephone Labor Inc Thin film capacitor including an aluminum underlay
US3847658A (en) * 1972-01-14 1974-11-12 Western Electric Co Article of manufacture having a film comprising nitrogen-doped beta tantalum
DE2513858C3 (de) * 1975-03-27 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung eines Tantal-Dünnschichtkondensators
US4200502A (en) * 1979-03-12 1980-04-29 Siemens Aktiengesellschaft Method for producing an electrical thin layer circuit

Also Published As

Publication number Publication date
EP0024863A3 (en) 1981-05-06
EP0024863A2 (de) 1981-03-11
EP0024863B1 (de) 1983-05-25
US4364099A (en) 1982-12-14

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee