DE3071589D1 - Method for forming an insulating film on a semiconductor substrate surface - Google Patents

Method for forming an insulating film on a semiconductor substrate surface

Info

Publication number
DE3071589D1
DE3071589D1 DE8080300530T DE3071589T DE3071589D1 DE 3071589 D1 DE3071589 D1 DE 3071589D1 DE 8080300530 T DE8080300530 T DE 8080300530T DE 3071589 T DE3071589 T DE 3071589T DE 3071589 D1 DE3071589 D1 DE 3071589D1
Authority
DE
Germany
Prior art keywords
forming
insulating film
semiconductor substrate
substrate surface
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8080300530T
Other languages
English (en)
Inventor
Takao Nozaki
Takashi Ito
Hideki Arakawa
Masaichi Shinoda
Hajime Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE3071589D1 publication Critical patent/DE3071589D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02247—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by nitridation, e.g. nitridation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02323—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen
    • H01L21/02326—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of oxygen into a nitride layer, e.g. changing SiN to SiON
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
    • H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/318—Inorganic layers composed of nitrides
    • H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
DE8080300530T 1979-03-09 1980-02-22 Method for forming an insulating film on a semiconductor substrate surface Expired DE3071589D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54027301A JPS5845177B2 (ja) 1979-03-09 1979-03-09 半導体表面絶縁膜の形成法

Publications (1)

Publication Number Publication Date
DE3071589D1 true DE3071589D1 (en) 1986-06-12

Family

ID=12217260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8080300530T Expired DE3071589D1 (en) 1979-03-09 1980-02-22 Method for forming an insulating film on a semiconductor substrate surface

Country Status (5)

Country Link
US (1) US4298629A (de)
EP (1) EP0015694B1 (de)
JP (1) JPS5845177B2 (de)
CA (1) CA1141870A (de)
DE (1) DE3071589D1 (de)

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US4583492A (en) * 1983-12-19 1986-04-22 United Technologies Corporation High rate, low temperature silicon deposition system
US4595601A (en) * 1984-05-25 1986-06-17 Kabushiki Kaisha Toshiba Method of selectively forming an insulation layer
US4510172A (en) * 1984-05-29 1985-04-09 International Business Machines Corporation Technique for thin insulator growth
US4762728A (en) * 1985-04-09 1988-08-09 Fairchild Semiconductor Corporation Low temperature plasma nitridation process and applications of nitride films formed thereby
US4640224A (en) * 1985-08-05 1987-02-03 Spectrum Cvd, Inc. CVD heat source
US4686113A (en) * 1985-12-18 1987-08-11 Fairchild Semiconductor Corporation Plasma confinement in a low pressure electrically grounded R.F. heated reactor and deposition method
US4715937A (en) * 1986-05-05 1987-12-29 The Board Of Trustees Of The Leland Stanford Junior University Low-temperature direct nitridation of silicon in nitrogen plasma generated by microwave discharge
CH671407A5 (de) * 1986-06-13 1989-08-31 Balzers Hochvakuum
ES2006119A6 (es) * 1988-03-24 1989-04-01 Union Explosivos Rio Tinto Procedimiento de obtencion de nitruro de silicio.
DE3839177A1 (de) * 1988-11-19 1990-06-13 Roehm Gmbh Temporaere schutzueberzuege auf polyacrylatbasis
JPH0663099B2 (ja) * 1989-03-06 1994-08-17 善八 小久見 薄膜の製造方法
US4902870A (en) * 1989-03-31 1990-02-20 General Electric Company Apparatus and method for transfer arc cleaning of a substrate in an RF plasma system
US5332697A (en) * 1989-05-31 1994-07-26 Smith Rosemary L Formation of silicon nitride by nitridation of porous silicon
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US5032545A (en) * 1990-10-30 1991-07-16 Micron Technology, Inc. Process for preventing a native oxide from forming on the surface of a semiconductor material and integrated circuit capacitors produced thereby
JP2687758B2 (ja) * 1991-05-27 1997-12-08 日本電気株式会社 半導体装置の製造方法
US5290368A (en) * 1992-02-28 1994-03-01 Ingersoll-Rand Company Process for producing crack-free nitride-hardened surface on titanium by laser beams
JP3660391B2 (ja) * 1994-05-27 2005-06-15 株式会社東芝 半導体装置の製造方法
US5643639A (en) * 1994-12-22 1997-07-01 Research Triangle Institute Plasma treatment method for treatment of a large-area work surface apparatus and methods
US5711891A (en) * 1995-09-20 1998-01-27 Lucent Technologies Inc. Wafer processing using thermal nitride etch mask
JPH09307106A (ja) * 1996-05-20 1997-11-28 Nec Corp 半導体装置の製造方法
TW317012B (en) * 1996-10-19 1997-10-01 United Microelectronics Corp Process of improving semiconductor device degradation caused by hot carrier
US6207587B1 (en) 1997-06-24 2001-03-27 Micron Technology, Inc. Method for forming a dielectric
US6555452B2 (en) * 1997-11-18 2003-04-29 Technologies And Devices International, Inc. Method for growing p-type III-V compound material utilizing HVPE techniques
US6331468B1 (en) * 1998-05-11 2001-12-18 Lsi Logic Corporation Formation of integrated circuit structure using one or more silicon layers for implantation and out-diffusion in formation of defect-free source/drain regions and also for subsequent formation of silicon nitride spacers
US6995097B1 (en) * 1998-05-27 2006-02-07 Texas Instruments Incorporated Method for thermal nitridation and oxidation of semiconductor surface
US6759315B1 (en) * 1999-01-04 2004-07-06 International Business Machines Corporation Method for selective trimming of gate structures and apparatus formed thereby
US7250375B2 (en) * 2001-08-02 2007-07-31 Tokyo Electron Limited Substrate processing method and material for electronic device
US7297641B2 (en) * 2002-07-19 2007-11-20 Asm America, Inc. Method to form ultra high quality silicon-containing compound layers
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US7253084B2 (en) 2004-09-03 2007-08-07 Asm America, Inc. Deposition from liquid sources
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US7674726B2 (en) * 2004-10-15 2010-03-09 Asm International N.V. Parts for deposition reactors
US7427571B2 (en) * 2004-10-15 2008-09-23 Asm International, N.V. Reactor design for reduced particulate generation
US7629267B2 (en) * 2005-03-07 2009-12-08 Asm International N.V. High stress nitride film and method for formation thereof
US20070054048A1 (en) * 2005-09-07 2007-03-08 Suvi Haukka Extended deposition range by hot spots
US7553516B2 (en) * 2005-12-16 2009-06-30 Asm International N.V. System and method of reducing particle contamination of semiconductor substrates
US7718518B2 (en) * 2005-12-16 2010-05-18 Asm International N.V. Low temperature doped silicon layer formation
US7691757B2 (en) 2006-06-22 2010-04-06 Asm International N.V. Deposition of complex nitride films
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Also Published As

Publication number Publication date
JPS55120143A (en) 1980-09-16
US4298629A (en) 1981-11-03
EP0015694A3 (en) 1980-11-12
EP0015694B1 (de) 1986-05-07
CA1141870A (en) 1983-02-22
EP0015694A2 (de) 1980-09-17
JPS5845177B2 (ja) 1983-10-07

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