DE3274469D1 - Method for ion-implanting metal elements - Google Patents

Method for ion-implanting metal elements

Info

Publication number
DE3274469D1
DE3274469D1 DE8282104791T DE3274469T DE3274469D1 DE 3274469 D1 DE3274469 D1 DE 3274469D1 DE 8282104791 T DE8282104791 T DE 8282104791T DE 3274469 T DE3274469 T DE 3274469T DE 3274469 D1 DE3274469 D1 DE 3274469D1
Authority
DE
Germany
Prior art keywords
ion
metal elements
implanting metal
implanting
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282104791T
Other languages
English (en)
Inventor
Kei Kirita
Katuo Koike
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3274469D1 publication Critical patent/DE3274469D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J27/00—Ion beam tubes
    • H01J27/02—Ion sources; Ion guns
    • H01J27/20—Ion sources; Ion guns using particle beam bombardment, e.g. ionisers
    • H01J27/22—Metal ion sources
DE8282104791T 1981-06-01 1982-06-01 Method for ion-implanting metal elements Expired DE3274469D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56082517A JPS57201527A (en) 1981-06-01 1981-06-01 Ion implantation method

Publications (1)

Publication Number Publication Date
DE3274469D1 true DE3274469D1 (en) 1987-01-15

Family

ID=13776721

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282104791T Expired DE3274469D1 (en) 1981-06-01 1982-06-01 Method for ion-implanting metal elements

Country Status (5)

Country Link
US (1) US4496843A (de)
EP (1) EP0066288B1 (de)
JP (1) JPS57201527A (de)
CS (1) CS241509B2 (de)
DE (1) DE3274469D1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4665315A (en) * 1985-04-01 1987-05-12 Control Data Corporation Method and apparatus for in-situ plasma cleaning of electron beam optical systems
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
JPS63118074A (ja) * 1986-11-05 1988-05-23 Matsushita Electric Ind Co Ltd 薄膜形成装置
JPH0262039A (ja) * 1988-08-29 1990-03-01 Hitachi Ltd 多層素子の微細加工方法およびその装置
US5089746A (en) * 1989-02-14 1992-02-18 Varian Associates, Inc. Production of ion beams by chemically enhanced sputtering of solids
GB2308132A (en) * 1995-12-14 1997-06-18 Imperial College Depositing films on a substrate using an electric field
US5972743A (en) * 1996-12-03 1999-10-26 Advanced Technology Materials, Inc. Precursor compositions for ion implantation of antimony and ion implantation process utilizing same
US6001172A (en) * 1997-08-05 1999-12-14 Advanced Technology Materials, Inc. Apparatus and method for the in-situ generation of dopants
AU1116099A (en) * 1997-10-23 1999-05-10 Birken, Stephen M. System and method of producing pure elements from parent compounds
US6101816A (en) * 1998-04-28 2000-08-15 Advanced Technology Materials, Inc. Fluid storage and dispensing system
KR20010039728A (ko) * 1999-07-22 2001-05-15 가와하라 하지메 이온 소스
US6265722B1 (en) * 1999-08-31 2001-07-24 Micron Technology, Inc. Organic field ionization source
JP4627916B2 (ja) * 2001-03-29 2011-02-09 キヤノンアネルバ株式会社 イオン化装置
WO2004013371A2 (en) * 2002-08-02 2004-02-12 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for plasma implantation without deposition of a layer of byproduct
US7129513B2 (en) * 2004-06-02 2006-10-31 Xintek, Inc. Field emission ion source based on nanostructure-containing material
US7105840B2 (en) * 2005-02-03 2006-09-12 Axcelis Technologies, Inc. Ion source for use in an ion implanter
US7655931B2 (en) * 2007-03-29 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for improving the performance and extending the lifetime of an ion source with gas mixing
US9396902B2 (en) 2012-05-22 2016-07-19 Varian Semiconductor Equipment Associates, Inc. Gallium ION source and materials therefore
US20180247800A1 (en) * 2017-02-28 2018-08-30 International Business Machines Corporation Gallium implantation cleaning method
CN112366126A (zh) * 2020-11-11 2021-02-12 成都理工大学工程技术学院 一种霍尔离子源及其放电系统

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2882408A (en) * 1946-05-21 1959-04-14 Edward J Lofgren Ion source for a calutron
GB1104935A (en) * 1964-05-08 1968-03-06 Standard Telephones Cables Ltd Improvements in or relating to a method of forming a layer of an inorganic compound
US3706597A (en) * 1970-11-23 1972-12-19 Ibm Glass vapor deposition on surfaces of semiconductor elements
US3808035A (en) * 1970-12-09 1974-04-30 M Stelter Deposition of single or multiple layers on substrates from dilute gas sweep to produce optical components, electro-optical components, and the like
DE2210742A1 (de) * 1972-03-06 1973-09-20 Siemens Ag Verfahren zur herstellung von metallbzw. metallegierungs-kohlenstoff-widerstaenden
US4058638A (en) * 1974-12-19 1977-11-15 Texas Instruments Incorporated Method of optical thin film coating
US3991228A (en) * 1975-01-27 1976-11-09 Rca Corporation Deposition of tin oxide films on glass
ATA261878A (de) * 1978-04-14 1979-05-15 Ver Edelstahlwerke Ag Verfahren zur herstellung beschichteter hart- metallkoerper
US4318029A (en) * 1980-05-12 1982-03-02 Hughes Aircraft Company Liquid metal ion source
US4367429A (en) * 1980-11-03 1983-01-04 Hughes Aircraft Company Alloys for liquid metal ion sources

Also Published As

Publication number Publication date
JPS57201527A (en) 1982-12-10
EP0066288B1 (de) 1986-11-26
CS404882A2 (en) 1985-08-15
JPS611503B2 (de) 1986-01-17
US4496843A (en) 1985-01-29
CS241509B2 (en) 1986-03-13
EP0066288A1 (de) 1982-12-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee