DE3280176D1 - Photoelektrischer halbleiterumwandler. - Google Patents

Photoelektrischer halbleiterumwandler.

Info

Publication number
DE3280176D1
DE3280176D1 DE8282903477T DE3280176T DE3280176D1 DE 3280176 D1 DE3280176 D1 DE 3280176D1 DE 8282903477 T DE8282903477 T DE 8282903477T DE 3280176 T DE3280176 T DE 3280176T DE 3280176 D1 DE3280176 D1 DE 3280176D1
Authority
DE
Germany
Prior art keywords
photoelectric semiconductor
semiconductor converter
converter
photoelectric
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8282903477T
Other languages
English (en)
Inventor
Jun-Ichi Nishizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Original Assignee
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation filed Critical Semiconductor Research Foundation
Application granted granted Critical
Publication of DE3280176D1 publication Critical patent/DE3280176D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14679Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391Gated diode structures
    • H01L29/7392Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/7722Field effect transistors using static field induced regions, e.g. SIT, PBT
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124Devices with PN homojunction gate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1124Devices with PN homojunction gate
    • H01L31/1126Devices with PN homojunction gate the device being a field-effect phototransistor
DE8282903477T 1981-12-01 1982-11-30 Photoelektrischer halbleiterumwandler. Expired - Lifetime DE3280176D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56194286A JPS5895877A (ja) 1981-12-01 1981-12-01 半導体光電変換装置
PCT/JP1982/000458 WO1983002038A1 (en) 1981-12-01 1982-11-30 Semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
DE3280176D1 true DE3280176D1 (de) 1990-06-21

Family

ID=16322069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282903477T Expired - Lifetime DE3280176D1 (de) 1981-12-01 1982-11-30 Photoelektrischer halbleiterumwandler.

Country Status (5)

Country Link
US (1) US4641167A (de)
EP (1) EP0094974B1 (de)
JP (1) JPS5895877A (de)
DE (1) DE3280176D1 (de)
WO (1) WO1983002038A1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5941877A (ja) * 1982-08-31 1984-03-08 Junichi Nishizawa フオトトランジスタ
JPS59107578A (ja) * 1982-12-11 1984-06-21 Junichi Nishizawa 半導体光電変換装置
JPS61198779A (ja) * 1985-02-28 1986-09-03 Res Dev Corp Of Japan 両面ゲ−ト静電誘導サイリスタ及びその製造方法
JPS62503139A (ja) * 1985-06-14 1987-12-10 アメリカン テレフオン アンド テレグラフ カムパニ− 半導体デバイス
JPS6267866A (ja) * 1985-09-20 1987-03-27 Fuji Xerox Co Ltd 光電変換素子およびその製造方法
US4959701A (en) * 1989-05-01 1990-09-25 Westinghouse Electric Corp. Variable sensitivity floating gate photosensor
JPH05328225A (ja) * 1992-05-15 1993-12-10 Sony Corp 増幅型固体撮像装置
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
DE4331391A1 (de) * 1993-09-15 1995-03-16 Josef Dr Kemmer Halbleiter(detektor)struktur
US7642573B2 (en) * 2004-03-12 2010-01-05 Hewlett-Packard Development Company, L.P. Semiconductor device
JP5401203B2 (ja) * 2009-08-07 2014-01-29 株式会社日立製作所 半導体受光装置及びその製造方法
US11101389B2 (en) * 2019-02-21 2021-08-24 Marvell Asia Pte, Ltd. Dual-use semiconductor device for solar power and data storage
US20220199661A1 (en) * 2020-04-10 2022-06-23 Optohub Co., Ltd Semiconductor image sensor

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3366802A (en) * 1965-04-06 1968-01-30 Fairchild Camera Instr Co Field effect transistor photosensitive modulator
GB1444541A (en) * 1972-09-22 1976-08-04 Mullard Ltd Radiation sensitive solid state devices
JPS5530308B2 (de) * 1974-11-28 1980-08-09
JPS5368178A (en) * 1976-11-30 1978-06-17 Handotai Kenkyu Shinkokai Fet transistor
US4284997A (en) * 1977-07-07 1981-08-18 Zaidan Hojin Handotai Kenkyu Shinkokai Static induction transistor and its applied devices
JPS5513924A (en) * 1978-07-14 1980-01-31 Semiconductor Res Found Semiconductor photoelectronic conversion device
DE2951916A1 (de) * 1979-12-21 1981-07-02 Siemens AG, 1000 Berlin und 8000 München Lichtsteuerbarer thyristor
JPS57164580A (en) * 1981-04-01 1982-10-09 Olympus Optical Co Ltd Photodetecting element having insulating film semiconductor type structure and manufacture thereof

Also Published As

Publication number Publication date
EP0094974A4 (de) 1985-12-05
EP0094974A1 (de) 1983-11-30
JPS5895877A (ja) 1983-06-07
US4641167A (en) 1987-02-03
EP0094974B1 (de) 1990-05-16
WO1983002038A1 (en) 1983-06-09

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