DE3280176D1 - Photoelektrischer halbleiterumwandler. - Google Patents
Photoelektrischer halbleiterumwandler.Info
- Publication number
- DE3280176D1 DE3280176D1 DE8282903477T DE3280176T DE3280176D1 DE 3280176 D1 DE3280176 D1 DE 3280176D1 DE 8282903477 T DE8282903477 T DE 8282903477T DE 3280176 T DE3280176 T DE 3280176T DE 3280176 D1 DE3280176 D1 DE 3280176D1
- Authority
- DE
- Germany
- Prior art keywords
- photoelectric semiconductor
- semiconductor converter
- converter
- photoelectric
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14679—Junction field effect transistor [JFET] imagers; static induction transistor [SIT] imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7391—Gated diode structures
- H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/7722—Field effect transistors using static field induced regions, e.g. SIT, PBT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/1124—Devices with PN homojunction gate
- H01L31/1126—Devices with PN homojunction gate the device being a field-effect phototransistor
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56194286A JPS5895877A (ja) | 1981-12-01 | 1981-12-01 | 半導体光電変換装置 |
PCT/JP1982/000458 WO1983002038A1 (en) | 1981-12-01 | 1982-11-30 | Semiconductor photoelectric converter |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3280176D1 true DE3280176D1 (de) | 1990-06-21 |
Family
ID=16322069
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8282903477T Expired - Lifetime DE3280176D1 (de) | 1981-12-01 | 1982-11-30 | Photoelektrischer halbleiterumwandler. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4641167A (de) |
EP (1) | EP0094974B1 (de) |
JP (1) | JPS5895877A (de) |
DE (1) | DE3280176D1 (de) |
WO (1) | WO1983002038A1 (de) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5941877A (ja) * | 1982-08-31 | 1984-03-08 | Junichi Nishizawa | フオトトランジスタ |
JPS59107578A (ja) * | 1982-12-11 | 1984-06-21 | Junichi Nishizawa | 半導体光電変換装置 |
JPS61198779A (ja) * | 1985-02-28 | 1986-09-03 | Res Dev Corp Of Japan | 両面ゲ−ト静電誘導サイリスタ及びその製造方法 |
JPS62503139A (ja) * | 1985-06-14 | 1987-12-10 | アメリカン テレフオン アンド テレグラフ カムパニ− | 半導体デバイス |
JPS6267866A (ja) * | 1985-09-20 | 1987-03-27 | Fuji Xerox Co Ltd | 光電変換素子およびその製造方法 |
US4959701A (en) * | 1989-05-01 | 1990-09-25 | Westinghouse Electric Corp. | Variable sensitivity floating gate photosensor |
JPH05328225A (ja) * | 1992-05-15 | 1993-12-10 | Sony Corp | 増幅型固体撮像装置 |
TW232751B (en) * | 1992-10-09 | 1994-10-21 | Semiconductor Energy Res Co Ltd | Semiconductor device and method for forming the same |
DE4331391A1 (de) * | 1993-09-15 | 1995-03-16 | Josef Dr Kemmer | Halbleiter(detektor)struktur |
US7642573B2 (en) * | 2004-03-12 | 2010-01-05 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
JP5401203B2 (ja) * | 2009-08-07 | 2014-01-29 | 株式会社日立製作所 | 半導体受光装置及びその製造方法 |
US11101389B2 (en) * | 2019-02-21 | 2021-08-24 | Marvell Asia Pte, Ltd. | Dual-use semiconductor device for solar power and data storage |
US20220199661A1 (en) * | 2020-04-10 | 2022-06-23 | Optohub Co., Ltd | Semiconductor image sensor |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3366802A (en) * | 1965-04-06 | 1968-01-30 | Fairchild Camera Instr Co | Field effect transistor photosensitive modulator |
GB1444541A (en) * | 1972-09-22 | 1976-08-04 | Mullard Ltd | Radiation sensitive solid state devices |
JPS5530308B2 (de) * | 1974-11-28 | 1980-08-09 | ||
JPS5368178A (en) * | 1976-11-30 | 1978-06-17 | Handotai Kenkyu Shinkokai | Fet transistor |
US4284997A (en) * | 1977-07-07 | 1981-08-18 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction transistor and its applied devices |
JPS5513924A (en) * | 1978-07-14 | 1980-01-31 | Semiconductor Res Found | Semiconductor photoelectronic conversion device |
DE2951916A1 (de) * | 1979-12-21 | 1981-07-02 | Siemens AG, 1000 Berlin und 8000 München | Lichtsteuerbarer thyristor |
JPS57164580A (en) * | 1981-04-01 | 1982-10-09 | Olympus Optical Co Ltd | Photodetecting element having insulating film semiconductor type structure and manufacture thereof |
-
1981
- 1981-12-01 JP JP56194286A patent/JPS5895877A/ja active Pending
-
1982
- 1982-11-30 WO PCT/JP1982/000458 patent/WO1983002038A1/ja active IP Right Grant
- 1982-11-30 US US06/522,153 patent/US4641167A/en not_active Expired - Lifetime
- 1982-11-30 EP EP82903477A patent/EP0094974B1/de not_active Expired - Lifetime
- 1982-11-30 DE DE8282903477T patent/DE3280176D1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0094974A4 (de) | 1985-12-05 |
EP0094974A1 (de) | 1983-11-30 |
JPS5895877A (ja) | 1983-06-07 |
US4641167A (en) | 1987-02-03 |
EP0094974B1 (de) | 1990-05-16 |
WO1983002038A1 (en) | 1983-06-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |