DE3561267D1 - Method and circuit for the temperature compensation of a hall element - Google Patents

Method and circuit for the temperature compensation of a hall element

Info

Publication number
DE3561267D1
DE3561267D1 DE8585102873T DE3561267T DE3561267D1 DE 3561267 D1 DE3561267 D1 DE 3561267D1 DE 8585102873 T DE8585102873 T DE 8585102873T DE 3561267 T DE3561267 T DE 3561267T DE 3561267 D1 DE3561267 D1 DE 3561267D1
Authority
DE
Germany
Prior art keywords
circuit
hall element
temperature compensation
compensation
hall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585102873T
Other languages
English (en)
Inventor
Radivoje Popovic
Jean-Luc Berchier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Building Technologies AG
Landis and Gyr AG
Original Assignee
Landis and Gyr AG
LGZ Landis and Gyr Zug AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Landis and Gyr AG, LGZ Landis and Gyr Zug AG filed Critical Landis and Gyr AG
Application granted granted Critical
Publication of DE3561267D1 publication Critical patent/DE3561267D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N52/00—Hall-effect devices
    • H10N52/101—Semiconductor Hall-effect devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S323/00—Electricity: power supply or regulation systems
    • Y10S323/907—Temperature compensation of semiconductor
DE8585102873T 1984-04-18 1985-03-13 Method and circuit for the temperature compensation of a hall element Expired DE3561267D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1939/84A CH663686A5 (de) 1984-04-18 1984-04-18 Verfahren und schaltung zur temperaturkompensation eines stromgespeisten hallelementes.

Publications (1)

Publication Number Publication Date
DE3561267D1 true DE3561267D1 (en) 1988-02-04

Family

ID=4222128

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585102873T Expired DE3561267D1 (en) 1984-04-18 1985-03-13 Method and circuit for the temperature compensation of a hall element

Country Status (4)

Country Link
US (1) US4634961A (de)
EP (1) EP0162214B1 (de)
CH (1) CH663686A5 (de)
DE (1) DE3561267D1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4760285A (en) * 1987-03-30 1988-07-26 Honeywell Inc. Hall effect device with epitaxal layer resistive means for providing temperature independent sensitivity
JPH082631Y2 (ja) * 1988-08-05 1996-01-29 三菱電機株式会社 ホール効果型センサ装置
DE4118255A1 (de) * 1991-06-04 1992-12-10 Itt Ind Gmbh Deutsche Monolithisch integrierter sensorschaltkreis in cmos-technik
DE10240404A1 (de) 2002-09-02 2004-03-18 Austriamicrosystems Ag Hall-Sensor und Verfahren zu dessen Betrieb
FR2844636B1 (fr) * 2002-09-13 2005-08-19 Socomec Sa Capteur dual magnetique et thermique obtenu selon la technologie des semi-conducteurs
DE10313948B4 (de) * 2003-03-27 2010-07-29 Infineon Technologies Ag Schaltung mit einem Hallelement, Verfahren zum Betreiben derselben und Verfahren zum Herstellen derselben
US7002229B2 (en) * 2004-06-16 2006-02-21 Honeywell International Inc. Self aligned Hall with field plate
US7365503B2 (en) * 2005-06-09 2008-04-29 Ford Motor Company Hall Effect sensor temperature compensator
US7265539B2 (en) * 2005-06-09 2007-09-04 Ford Motor Company Calibration of a hall effect sensor
US7476022B2 (en) * 2005-09-15 2009-01-13 Magna Closures Inc. Measurement of motor temperature using a digital encoder
US9013167B2 (en) 2010-11-09 2015-04-21 Texas Instruments Incorporated Hall effect device having voltage based biasing for temperature compensation
US9548443B2 (en) 2013-01-29 2017-01-17 Allegro Microsystems, Llc Vertical Hall Effect element with improved sensitivity
US9099638B2 (en) 2013-03-15 2015-08-04 Allegro Microsystems, Llc Vertical hall effect element with structures to improve sensitivity
US9312473B2 (en) * 2013-09-30 2016-04-12 Allegro Microsystems, Llc Vertical hall effect sensor
EP3315983B1 (de) * 2016-10-31 2020-06-03 Senis AG Kalibrierwerkzeug für die kalibrierung eines magnetfeldsensors
EP3467522B1 (de) 2017-10-06 2023-02-22 STMicroelectronics S.r.l. Temperaturkompensierungsschaltung, entsprechende vorrichtung und verfahren

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3448353A (en) * 1966-11-14 1969-06-03 Westinghouse Electric Corp Mos field effect transistor hall effect devices
FR1572426A (de) * 1967-04-26 1969-06-27
DE2640082C2 (de) * 1976-09-06 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Schaltung zur Temperaturkompensation eines Hallgenerators
CA1088159A (en) * 1977-01-03 1980-10-21 Wilson D. Pace Hall-effect integrated circuit switch
US4283643A (en) * 1979-05-25 1981-08-11 Electric Power Research Institute, Inc. Hall sensing apparatus
DE2931686A1 (de) * 1979-08-04 1981-02-19 Papst Motoren Kg Antriebsanordnung mit kollektorlosem gleichstrommotor und halbleiterschalter
US4371837A (en) * 1979-11-13 1983-02-01 American Can Company Temperature compensated input power and output offset circuits for a hall effect transducer
US4327416A (en) * 1980-04-16 1982-04-27 Sangamo Weston, Inc. Temperature compensation system for Hall effect element
DE3303945C2 (de) * 1982-02-09 1985-08-22 Vacuumschmelze Gmbh, 6450 Hanau Schaltung zur temperaturkompensierenden Stromversorgung eines Hallgenerators
US4521727A (en) * 1983-05-23 1985-06-04 Honeywell Inc. Hall effect circuit with temperature compensation

Also Published As

Publication number Publication date
EP0162214B1 (de) 1987-12-23
CH663686A5 (de) 1987-12-31
EP0162214A1 (de) 1985-11-27
US4634961A (en) 1987-01-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee