DE3571101D1 - Vlsi chemical reactor - Google Patents

Vlsi chemical reactor

Info

Publication number
DE3571101D1
DE3571101D1 DE8585109202T DE3571101T DE3571101D1 DE 3571101 D1 DE3571101 D1 DE 3571101D1 DE 8585109202 T DE8585109202 T DE 8585109202T DE 3571101 T DE3571101 T DE 3571101T DE 3571101 D1 DE3571101 D1 DE 3571101D1
Authority
DE
Germany
Prior art keywords
wafer
guide
fluid
fluid flow
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8585109202T
Other languages
English (en)
Inventor
Wayne A Cady
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avantor Performance Materials LLC
Original Assignee
JT Baker Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by JT Baker Inc filed Critical JT Baker Inc
Application granted granted Critical
Publication of DE3571101D1 publication Critical patent/DE3571101D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/08—Apparatus, e.g. for photomechanical printing surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/935—Gas flow control
DE8585109202T 1984-07-24 1985-07-23 Vlsi chemical reactor Expired DE3571101D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/633,938 US4544446A (en) 1984-07-24 1984-07-24 VLSI chemical reactor

Publications (1)

Publication Number Publication Date
DE3571101D1 true DE3571101D1 (en) 1989-07-20

Family

ID=24541773

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585109202T Expired DE3571101D1 (en) 1984-07-24 1985-07-23 Vlsi chemical reactor

Country Status (9)

Country Link
US (1) US4544446A (de)
EP (1) EP0169541B1 (de)
JP (1) JPS6140032A (de)
KR (1) KR860001472A (de)
AT (1) ATE44117T1 (de)
CA (1) CA1255193A (de)
DE (1) DE3571101D1 (de)
IE (1) IE56827B1 (de)
IL (1) IL75730A (de)

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US4339297A (en) * 1981-04-14 1982-07-13 Seiichiro Aigo Apparatus for etching of oxide film on semiconductor wafer
NL8103979A (nl) * 1981-08-26 1983-03-16 Bok Edward Methode en inrichting voor het aanbrengen van een film vloeibaar medium op een substraat.
US4430149A (en) * 1981-12-30 1984-02-07 Rca Corporation Chemical vapor deposition of epitaxial silicon
JPS593430A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd ホトレジスト膜形成方法
JPS5952563A (ja) * 1982-09-20 1984-03-27 Fujitsu Ltd コ−テイング装置

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IL75730A (en) 1988-05-31
KR860001472A (ko) 1986-02-26
IE56827B1 (en) 1991-12-18
EP0169541A2 (de) 1986-01-29
JPS6140032A (ja) 1986-02-26
CA1255193A (en) 1989-06-06
US4544446A (en) 1985-10-01
EP0169541B1 (de) 1989-06-14
EP0169541A3 (en) 1987-08-26
ATE44117T1 (de) 1989-06-15
IE851650L (en) 1986-01-24

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