DE3587082T2 - Speichersystem fuer analoge daten. - Google Patents

Speichersystem fuer analoge daten.

Info

Publication number
DE3587082T2
DE3587082T2 DE8585302197T DE3587082T DE3587082T2 DE 3587082 T2 DE3587082 T2 DE 3587082T2 DE 8585302197 T DE8585302197 T DE 8585302197T DE 3587082 T DE3587082 T DE 3587082T DE 3587082 T2 DE3587082 T2 DE 3587082T2
Authority
DE
Germany
Prior art keywords
storage system
analog data
analog
data
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8585302197T
Other languages
English (en)
Other versions
DE3587082D1 (de
Inventor
James Terrell Walker
Raymond Sverre Larsen
Stephen Loeb Shapiro
Soo Ik Chae
Dietrich Reinhold Freytag
Martin Breidenbach
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Publication of DE3587082D1 publication Critical patent/DE3587082D1/de
Application granted granted Critical
Publication of DE3587082T2 publication Critical patent/DE3587082T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/04—Shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G11C27/026—Sample-and-hold arrangements using a capacitive memory element associated with an amplifier
DE8585302197T 1984-04-02 1985-03-29 Speichersystem fuer analoge daten. Expired - Fee Related DE3587082T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US59579084A 1984-04-02 1984-04-02

Publications (2)

Publication Number Publication Date
DE3587082D1 DE3587082D1 (de) 1993-03-25
DE3587082T2 true DE3587082T2 (de) 1993-06-03

Family

ID=24384687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8585302197T Expired - Fee Related DE3587082T2 (de) 1984-04-02 1985-03-29 Speichersystem fuer analoge daten.

Country Status (6)

Country Link
US (1) US4811285A (de)
EP (1) EP0157607B1 (de)
JP (1) JPS615499A (de)
AU (1) AU579856B2 (de)
CA (1) CA1230421A (de)
DE (1) DE3587082T2 (de)

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US5241494A (en) * 1990-09-26 1993-08-31 Information Storage Devices Integrated circuit system for analog signal recording and playback
US5243469A (en) * 1990-11-14 1993-09-07 Union Oil Company Of California System for the acquisition of seismic data
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US7071060B1 (en) * 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5712180A (en) * 1992-01-14 1998-01-27 Sundisk Corporation EEPROM with split gate source side injection
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US5359896A (en) * 1992-09-03 1994-11-01 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Acceleration recorder and playback module
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KR100299564B1 (ko) * 1997-12-31 2001-10-27 박종섭 펄스드라이버
FR2824177B1 (fr) * 2001-04-26 2004-12-03 Centre Nat Rech Scient Echantillonneur analogique rapide a grande profondeur memoire
US6975251B2 (en) * 2002-06-20 2005-12-13 Dakota Technologies, Inc. System for digitizing transient signals with waveform accumulator
WO2004002042A2 (en) * 2002-06-20 2003-12-31 Dakota Technologies, Inc. System for digitizing transient signals
US8156403B2 (en) * 2006-05-12 2012-04-10 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
CN103280239B (zh) * 2006-05-12 2016-04-06 苹果公司 存储设备中的失真估计和消除
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
WO2008053473A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Memory cell readout using successive approximation
US7975192B2 (en) 2006-10-30 2011-07-05 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
WO2008068747A2 (en) 2006-12-03 2008-06-12 Anobit Technologies Ltd. Automatic defect management in memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
WO2008111058A2 (en) * 2007-03-12 2008-09-18 Anobit Technologies Ltd. Adaptive estimation of memory cell read thresholds
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
US8429493B2 (en) 2007-05-12 2013-04-23 Apple Inc. Memory device with internal signap processing unit
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US8527819B2 (en) * 2007-10-19 2013-09-03 Apple Inc. Data storage in analog memory cell arrays having erase failures
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
US7924613B1 (en) * 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8713330B1 (en) 2008-10-30 2014-04-29 Apple Inc. Data scrambling in memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8174857B1 (en) 2008-12-31 2012-05-08 Anobit Technologies Ltd. Efficient readout schemes for analog memory cell devices using multiple read threshold sets
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8493781B1 (en) 2010-08-12 2013-07-23 Apple Inc. Interference mitigation using individual word line erasure operations
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

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US3898656A (en) * 1967-06-27 1975-08-05 Us Navy Radar data converter and display system
US4271488A (en) * 1979-04-13 1981-06-02 Tektronix, Inc. High-speed acquisition system employing an analog memory matrix
JPS55160396A (en) * 1979-05-28 1980-12-13 Toshiba Corp Capacitor memory
FR2483667A1 (fr) * 1980-06-03 1981-12-04 Thomson Csf Dispositif d'echantillonnage et maintien a capacite mos
EP0089397B1 (de) * 1982-03-24 1985-12-04 Deutsche ITT Industries GmbH Integrierte Speichermatrix mit nichtflüchtigen, umprogrammierbaren Speicherzellen

Also Published As

Publication number Publication date
EP0157607A2 (de) 1985-10-09
CA1230421A (en) 1987-12-15
EP0157607A3 (en) 1988-01-20
EP0157607B1 (de) 1993-02-10
DE3587082D1 (de) 1993-03-25
AU579856B2 (en) 1988-12-15
AU4058085A (en) 1985-10-10
JPS615499A (ja) 1986-01-11
US4811285A (en) 1989-03-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee