DE3875658D1 - Programmierbarer nur-lese-speicher mit mitteln zur entladung der bitleitung vor dem nachpruefen der programmierung. - Google Patents
Programmierbarer nur-lese-speicher mit mitteln zur entladung der bitleitung vor dem nachpruefen der programmierung.Info
- Publication number
- DE3875658D1 DE3875658D1 DE8888110322T DE3875658T DE3875658D1 DE 3875658 D1 DE3875658 D1 DE 3875658D1 DE 8888110322 T DE8888110322 T DE 8888110322T DE 3875658 T DE3875658 T DE 3875658T DE 3875658 D1 DE3875658 D1 DE 3875658D1
- Authority
- DE
- Germany
- Prior art keywords
- programming
- discharging
- memory
- bit line
- programmable read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16445987A JPH0715799B2 (ja) | 1987-06-30 | 1987-06-30 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3875658D1 true DE3875658D1 (de) | 1992-12-10 |
DE3875658T2 DE3875658T2 (de) | 1993-04-29 |
Family
ID=15793576
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888110322T Expired - Fee Related DE3875658T2 (de) | 1987-06-30 | 1988-06-28 | Programmierbarer nur-lese-speicher mit mitteln zur entladung der bitleitung vor dem nachpruefen der programmierung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4937787A (de) |
EP (1) | EP0297518B1 (de) |
JP (1) | JPH0715799B2 (de) |
KR (1) | KR910003388B1 (de) |
DE (1) | DE3875658T2 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1228822B (it) * | 1989-03-23 | 1991-07-04 | Sgs Thomson Microelectronics | Cella di riferimento per la lettura di dispositivi di memoria eeprom. |
EP0432481A3 (en) * | 1989-12-14 | 1992-04-29 | Texas Instruments Incorporated | Methods and apparatus for verifying the state of a plurality of electrically programmable memory cells |
JP2595781B2 (ja) * | 1990-07-13 | 1997-04-02 | 日本電気株式会社 | 半導体記憶装置 |
US5148436A (en) * | 1990-10-15 | 1992-09-15 | Motorola, Inc. | Circuit for detecting false read data from eprom |
US5265059A (en) * | 1991-05-10 | 1993-11-23 | Intel Corporation | Circuitry and method for discharging a drain of a cell of a non-volatile semiconductor memory |
US5142496A (en) * | 1991-06-03 | 1992-08-25 | Advanced Micro Devices, Inc. | Method for measuring VT 's less than zero without applying negative voltages |
US5357462A (en) * | 1991-09-24 | 1994-10-18 | Kabushiki Kaisha Toshiba | Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller |
JP2672740B2 (ja) * | 1991-10-07 | 1997-11-05 | 三菱電機株式会社 | マイクロコンピュータ |
US5361227A (en) | 1991-12-19 | 1994-11-01 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
US6781895B1 (en) * | 1991-12-19 | 2004-08-24 | Kabushiki Kaisha Toshiba | Non-volatile semiconductor memory device and memory system using the same |
US6222762B1 (en) * | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
JP2716906B2 (ja) * | 1992-03-27 | 1998-02-18 | 株式会社東芝 | 不揮発性半導体記憶装置 |
US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
JP3152762B2 (ja) * | 1992-10-06 | 2001-04-03 | 富士通株式会社 | 不揮発性半導体記憶装置 |
JP3737525B2 (ja) * | 1994-03-11 | 2006-01-18 | 株式会社東芝 | 半導体記憶装置 |
KR100211189B1 (ko) * | 1994-11-29 | 1999-07-15 | 다니구찌 이찌로오, 기타오카 다카시 | 양/음 고전압발생전원의 출력전위 리셋회로 |
JP3200012B2 (ja) * | 1996-04-19 | 2001-08-20 | 株式会社東芝 | 記憶システム |
US5909449A (en) * | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
JPH11204742A (ja) * | 1998-01-20 | 1999-07-30 | Sony Corp | メモリ及び情報機器 |
KR20010080651A (ko) * | 1999-10-04 | 2001-08-22 | 구사마 사부로 | 반도체 집적회로, 이 반도체 집적회로를 갖는 잉크카트리지, 및, 이 잉크 카트리지를 장착한 잉크젯 기록장치 |
US6327178B1 (en) * | 2000-07-18 | 2001-12-04 | Micron Technology, Inc. | Programmable circuit and its method of operation |
US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
US7395404B2 (en) * | 2004-12-16 | 2008-07-01 | Sandisk Corporation | Cluster auto-alignment for storing addressable data packets in a non-volatile memory array |
US7716538B2 (en) * | 2006-09-27 | 2010-05-11 | Sandisk Corporation | Memory with cell population distribution assisted read margining |
US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
US7573773B2 (en) * | 2007-03-28 | 2009-08-11 | Sandisk Corporation | Flash memory with data refresh triggered by controlled scrub data reads |
US7477547B2 (en) * | 2007-03-28 | 2009-01-13 | Sandisk Corporation | Flash memory refresh techniques triggered by controlled scrub data reads |
US8687421B2 (en) | 2011-11-21 | 2014-04-01 | Sandisk Technologies Inc. | Scrub techniques for use with dynamic read |
US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
US9552171B2 (en) | 2014-10-29 | 2017-01-24 | Sandisk Technologies Llc | Read scrub with adaptive counter management |
US9978456B2 (en) | 2014-11-17 | 2018-05-22 | Sandisk Technologies Llc | Techniques for reducing read disturb in partially written blocks of non-volatile memory |
US9349479B1 (en) | 2014-11-18 | 2016-05-24 | Sandisk Technologies Inc. | Boundary word line operation in nonvolatile memory |
US9449700B2 (en) | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
US9653154B2 (en) | 2015-09-21 | 2017-05-16 | Sandisk Technologies Llc | Write abort detection for multi-state memories |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IE54406B1 (en) * | 1980-12-23 | 1989-09-27 | Fujitsu Ltd | Electrically programmable non-colatile semiconductor memory device |
JPS5853775A (ja) * | 1981-09-26 | 1983-03-30 | Fujitsu Ltd | Icメモリ試験方法 |
US4612630A (en) * | 1984-07-27 | 1986-09-16 | Harris Corporation | EEPROM margin testing design |
JPS61151898A (ja) * | 1984-12-26 | 1986-07-10 | Fujitsu Ltd | 半導体記憶装置におけるワ−ド線ドライバ回路 |
JPH0638318B2 (ja) * | 1985-02-15 | 1994-05-18 | 株式会社リコー | Epromの書込み方法 |
JPS62114200A (ja) * | 1985-11-13 | 1987-05-25 | Mitsubishi Electric Corp | 半導体メモリ装置 |
JPS62223898A (ja) * | 1986-03-26 | 1987-10-01 | Hitachi Ltd | 半導体記憶装置 |
-
1987
- 1987-06-30 JP JP16445987A patent/JPH0715799B2/ja not_active Expired - Lifetime
-
1988
- 1988-06-27 US US07/212,376 patent/US4937787A/en not_active Expired - Lifetime
- 1988-06-28 EP EP88110322A patent/EP0297518B1/de not_active Expired - Lifetime
- 1988-06-28 DE DE8888110322T patent/DE3875658T2/de not_active Expired - Fee Related
- 1988-06-30 KR KR1019880008144A patent/KR910003388B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
DE3875658T2 (de) | 1993-04-29 |
JPH0715799B2 (ja) | 1995-02-22 |
US4937787A (en) | 1990-06-26 |
KR890001097A (ko) | 1989-03-18 |
KR910003388B1 (ko) | 1991-05-28 |
EP0297518B1 (de) | 1992-11-04 |
EP0297518A1 (de) | 1989-01-04 |
JPS648593A (en) | 1989-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |