DE50110560D1 - Magnetoresistiver speicher (mram) - Google Patents

Magnetoresistiver speicher (mram)

Info

Publication number
DE50110560D1
DE50110560D1 DE50110560T DE50110560T DE50110560D1 DE 50110560 D1 DE50110560 D1 DE 50110560D1 DE 50110560 T DE50110560 T DE 50110560T DE 50110560 T DE50110560 T DE 50110560T DE 50110560 D1 DE50110560 D1 DE 50110560D1
Authority
DE
Germany
Prior art keywords
mram
magnetoresistive memory
magnetoresistive
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE50110560T
Other languages
English (en)
Inventor
Martin Freitag
Heinz Hoenigschmid
Dietmar Gogl
Stefan Lammers
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Priority to DE50110560T priority Critical patent/DE50110560D1/de
Application granted granted Critical
Publication of DE50110560D1 publication Critical patent/DE50110560D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
DE50110560T 2000-11-10 2001-10-31 Magnetoresistiver speicher (mram) Expired - Fee Related DE50110560D1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE50110560T DE50110560D1 (de) 2000-11-10 2001-10-31 Magnetoresistiver speicher (mram)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10055936A DE10055936C2 (de) 2000-11-10 2000-11-10 Magnetoresistiver Speicher (MRAM) und dessen Verwendung
DE50110560T DE50110560D1 (de) 2000-11-10 2001-10-31 Magnetoresistiver speicher (mram)
PCT/EP2001/012622 WO2002039454A2 (de) 2000-11-10 2001-10-31 Magnetoresistiver speicher (mram)

Publications (1)

Publication Number Publication Date
DE50110560D1 true DE50110560D1 (de) 2006-09-07

Family

ID=7662943

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10055936A Expired - Fee Related DE10055936C2 (de) 2000-11-10 2000-11-10 Magnetoresistiver Speicher (MRAM) und dessen Verwendung
DE50110560T Expired - Fee Related DE50110560D1 (de) 2000-11-10 2001-10-31 Magnetoresistiver speicher (mram)

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10055936A Expired - Fee Related DE10055936C2 (de) 2000-11-10 2000-11-10 Magnetoresistiver Speicher (MRAM) und dessen Verwendung

Country Status (7)

Country Link
US (1) US6744662B2 (de)
EP (1) EP1332499B1 (de)
JP (1) JP2004532508A (de)
KR (1) KR20030059236A (de)
CN (1) CN1509474A (de)
DE (2) DE10055936C2 (de)
WO (1) WO2002039454A2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3647736B2 (ja) * 2000-09-29 2005-05-18 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
US8708828B2 (en) 2001-09-28 2014-04-29 Igt Pluggable modular gaming modifiers and configuration templates for gaming environments
US6902481B2 (en) 2001-09-28 2005-06-07 Igt Decoupling of the graphical presentation of a game from the presentation logic
US7931533B2 (en) 2001-09-28 2011-04-26 Igt Game development architecture that decouples the game logic from the graphics logics
ITTO20030729A1 (it) * 2003-09-23 2005-03-24 Fiat Ricerche Dispositivo di rilevazione di campi magnetici e relativo procedimento di rilevazione
KR100975803B1 (ko) * 2004-07-16 2010-08-16 헤드웨이 테크놀로지스 인코포레이티드 Ｍｔｊ ｍｒａｍ 셀, ｍｔｊ ｍｒａｍ 셀들의 어레이, 및 ｍｔｊ ｍｒａｍ 셀을 형성하는 방법
US7067330B2 (en) * 2004-07-16 2006-06-27 Headway Technologies, Inc. Magnetic random access memory array with thin conduction electrical read and write lines
US20060205513A1 (en) * 2005-03-09 2006-09-14 Igt MRAM as nonvolatile safe storage for power hit and ESD tolerance in gaming machines
US7722468B2 (en) * 2005-03-09 2010-05-25 Igt Magnetoresistive memory units as read only memory devices in gaming machines
US7736234B2 (en) * 2005-03-09 2010-06-15 Igt MRAM as critical event storage for powered down gaming machines
US7447061B1 (en) 2007-03-02 2008-11-04 The United States Of America As Represented By The Secretary Of The Navy Magnetoresistive memory array circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5902690A (en) * 1997-02-25 1999-05-11 Motorola, Inc. Stray magnetic shielding for a non-volatile MRAM
DE19744095A1 (de) * 1997-10-06 1999-04-15 Siemens Ag Speicherzellenanordnung
US5852574A (en) * 1997-12-24 1998-12-22 Motorola, Inc. High density magnetoresistive random access memory device and operating method thereof
DE10032278C1 (de) * 2000-07-03 2001-11-29 Infineon Technologies Ag Verfahren zur Verhinderung von Elektromigration in einem MRAM
DE10043947A1 (de) * 2000-09-06 2002-04-04 Infineon Technologies Ag Integrierte Schaltungsanordnung

Also Published As

Publication number Publication date
WO2002039454A3 (de) 2002-12-19
EP1332499A2 (de) 2003-08-06
JP2004532508A (ja) 2004-10-21
US6744662B2 (en) 2004-06-01
WO2002039454A2 (de) 2002-05-16
EP1332499B1 (de) 2006-07-26
US20030206461A1 (en) 2003-11-06
DE10055936A1 (de) 2002-05-23
CN1509474A (zh) 2004-06-30
KR20030059236A (ko) 2003-07-07
DE10055936C2 (de) 2003-08-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee