DE60108543D1 - Verbesserte Referenzschichtstruktur in einer magnetischen Speicherzelle - Google Patents

Verbesserte Referenzschichtstruktur in einer magnetischen Speicherzelle

Info

Publication number
DE60108543D1
DE60108543D1 DE60108543T DE60108543T DE60108543D1 DE 60108543 D1 DE60108543 D1 DE 60108543D1 DE 60108543 T DE60108543 T DE 60108543T DE 60108543 T DE60108543 T DE 60108543T DE 60108543 D1 DE60108543 D1 DE 60108543D1
Authority
DE
Germany
Prior art keywords
memory cell
layer structure
magnetic memory
reference layer
improved reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60108543T
Other languages
English (en)
Other versions
DE60108543T2 (de
Inventor
Manoj Bhattacharyya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HP Inc
Original Assignee
Hewlett Packard Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hewlett Packard Co filed Critical Hewlett Packard Co
Application granted granted Critical
Publication of DE60108543D1 publication Critical patent/DE60108543D1/de
Publication of DE60108543T2 publication Critical patent/DE60108543T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
DE60108543T 2000-02-29 2001-02-23 Verbesserte Referenzschichtstruktur in einer magnetischen Speicherzelle Expired - Fee Related DE60108543T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/514,961 US6297983B1 (en) 2000-02-29 2000-02-29 Reference layer structure in a magnetic storage cell
US514961 2000-02-29

Publications (2)

Publication Number Publication Date
DE60108543D1 true DE60108543D1 (de) 2005-03-03
DE60108543T2 DE60108543T2 (de) 2006-02-16

Family

ID=24049417

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60108543T Expired - Fee Related DE60108543T2 (de) 2000-02-29 2001-02-23 Verbesserte Referenzschichtstruktur in einer magnetischen Speicherzelle

Country Status (5)

Country Link
US (2) US6297983B1 (de)
EP (1) EP1132918B1 (de)
JP (2) JP2001308292A (de)
DE (1) DE60108543T2 (de)
HK (1) HK1036144A1 (de)

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JP5013494B2 (ja) * 2001-04-06 2012-08-29 ルネサスエレクトロニクス株式会社 磁性メモリの製造方法
US6418048B1 (en) * 2001-08-15 2002-07-09 Read-Rite Corporation Spin-dependent tunneling sensor suitable for a magnetic memory
US6518588B1 (en) * 2001-10-17 2003-02-11 International Business Machines Corporation Magnetic random access memory with thermally stable magnetic tunnel junction cells
US6794695B2 (en) * 2002-04-29 2004-09-21 Hewlett-Packard Development Company, L.P. Magneto resistive storage device having a magnetic field sink layer
US6597598B1 (en) 2002-04-30 2003-07-22 Hewlett-Packard Development Company, L.P. Resistive cross point memory arrays having a charge injection differential sense amplifier
US6574129B1 (en) 2002-04-30 2003-06-03 Hewlett-Packard Development Company, L.P. Resistive cross point memory cell arrays having a cross-couple latch sense amplifier
US6762952B2 (en) * 2002-05-01 2004-07-13 Hewlett-Packard Development Company, L.P. Minimizing errors in a magnetoresistive solid-state storage device
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
KR100506932B1 (ko) * 2002-12-10 2005-08-09 삼성전자주식회사 기준 셀들을 갖는 자기 램 소자 및 그 구조체
JP2004235443A (ja) * 2003-01-30 2004-08-19 Renesas Technology Corp 薄膜磁性体記憶装置およびその製造方法
US6944053B2 (en) * 2003-06-17 2005-09-13 Hewlett-Packard Development Company, L.P. Magnetic memory with structure providing reduced coercivity
DE10338422B4 (de) * 2003-08-18 2007-08-16 Infineon Technologies Ag Selektiver Plasmaätzprozess zur Aluminiumoxid-Strukturierung und dessen Verwendung
US6984529B2 (en) * 2003-09-10 2006-01-10 Infineon Technologies Ag Fabrication process for a magnetic tunnel junction device
US6794697B1 (en) * 2003-10-01 2004-09-21 Hewlett-Packard Development Company, L.P. Asymmetric patterned magnetic memory
US7050326B2 (en) * 2003-10-07 2006-05-23 Hewlett-Packard Development Company, L.P. Magnetic memory device with current carrying reference layer
JP2005129801A (ja) * 2003-10-24 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ
JP2006185961A (ja) * 2004-12-24 2006-07-13 Toshiba Corp 磁気ランダムアクセスメモリ
US7419610B2 (en) * 2005-08-05 2008-09-02 Hitachi Global Storage Technologies Netherlands B.V. Method of partial depth material removal for fabrication of CPP read sensor
US8389976B2 (en) * 2006-12-29 2013-03-05 Intel Corporation Methods of forming carbon nanotube transistors for high speed circuit operation and structures formed thereby
US8564079B2 (en) * 2008-04-21 2013-10-22 Qualcomm Incorporated STT MRAM magnetic tunnel junction architecture and integration
US20100315869A1 (en) * 2009-06-15 2010-12-16 Magic Technologies, Inc. Spin torque transfer MRAM design with low switching current
JP5214691B2 (ja) 2010-09-17 2013-06-19 株式会社東芝 磁気メモリ及びその製造方法
US9146287B2 (en) * 2010-11-15 2015-09-29 Infineon Technologies Ag XMR sensors with high shape anisotropy
JP5535161B2 (ja) * 2011-09-20 2014-07-02 株式会社東芝 磁気抵抗効果素子およびその製造方法
JP5542761B2 (ja) * 2011-09-20 2014-07-09 株式会社東芝 磁気抵抗効果素子およびその製造方法
US8615868B2 (en) 2011-11-29 2013-12-31 HGST Netherlands B.V. Method for manufacturing a magnetic sensor using two step ion milling
US9123879B2 (en) 2013-09-09 2015-09-01 Masahiko Nakayama Magnetoresistive element and method of manufacturing the same
US9368717B2 (en) 2013-09-10 2016-06-14 Kabushiki Kaisha Toshiba Magnetoresistive element and method for manufacturing the same
US9385304B2 (en) 2013-09-10 2016-07-05 Kabushiki Kaisha Toshiba Magnetic memory and method of manufacturing the same
US9231196B2 (en) 2013-09-10 2016-01-05 Kuniaki SUGIURA Magnetoresistive element and method of manufacturing the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4945397A (en) * 1986-12-08 1990-07-31 Honeywell Inc. Resistive overlayer for magnetic films
JPH05190508A (ja) * 1992-01-14 1993-07-30 Matsushita Electric Ind Co Ltd 薄膜のエッチング方法および積層薄膜のエッチング方法
US5650958A (en) * 1996-03-18 1997-07-22 International Business Machines Corporation Magnetic tunnel junctions with controlled magnetic response
JPH10163544A (ja) * 1996-11-29 1998-06-19 Sanyo Electric Co Ltd 磁気抵抗効果素子及びその製造方法
US6028786A (en) * 1997-04-28 2000-02-22 Canon Kabushiki Kaisha Magnetic memory element having coupled magnetic layers forming closed magnetic circuit
US6169686B1 (en) * 1997-11-20 2001-01-02 Hewlett-Packard Company Solid-state memory with magnetic storage cells
US5936293A (en) * 1998-01-23 1999-08-10 International Business Machines Corporation Hard/soft magnetic tunnel junction device with stable hard ferromagnetic layer
US6219212B1 (en) * 1998-09-08 2001-04-17 International Business Machines Corporation Magnetic tunnel junction head structure with insulating antiferromagnetic layer
US6233172B1 (en) * 1999-12-17 2001-05-15 Motorola, Inc. Magnetic element with dual magnetic states and fabrication method thereof

Also Published As

Publication number Publication date
DE60108543T2 (de) 2006-02-16
EP1132918A2 (de) 2001-09-12
HK1036144A1 (en) 2001-12-21
US20010022742A1 (en) 2001-09-20
US6297983B1 (en) 2001-10-02
EP1132918B1 (de) 2005-01-26
US6479353B2 (en) 2002-11-12
EP1132918A3 (de) 2003-01-08
JP2008193103A (ja) 2008-08-21
JP2001308292A (ja) 2001-11-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee