DE60130012D1 - Beschreibbare verfolgungszellen - Google Patents
Beschreibbare verfolgungszellenInfo
- Publication number
- DE60130012D1 DE60130012D1 DE60130012T DE60130012T DE60130012D1 DE 60130012 D1 DE60130012 D1 DE 60130012D1 DE 60130012 T DE60130012 T DE 60130012T DE 60130012 T DE60130012 T DE 60130012T DE 60130012 D1 DE60130012 D1 DE 60130012D1
- Authority
- DE
- Germany
- Prior art keywords
- cells
- tracking
- logic levels
- user
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5628—Programming or writing circuits; Data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
- G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/562—Multilevel memory programming aspects
- G11C2211/5621—Multilevel programming verification
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US671793 | 2000-09-27 | ||
| US09/671,793 US6538922B1 (en) | 2000-09-27 | 2000-09-27 | Writable tracking cells |
| PCT/US2001/030123 WO2002027729A2 (en) | 2000-09-27 | 2001-09-25 | Writable tracking cells |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60130012D1 true DE60130012D1 (de) | 2007-09-27 |
| DE60130012T2 DE60130012T2 (de) | 2008-03-20 |
Family
ID=24695908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60130012T Expired - Lifetime DE60130012T2 (de) | 2000-09-27 | 2001-09-25 | Beschreibbare verfolgungszellen |
Country Status (10)
| Country | Link |
|---|---|
| US (3) | US6538922B1 (de) |
| EP (2) | EP1332500B1 (de) |
| JP (1) | JP2004510286A (de) |
| KR (1) | KR100760886B1 (de) |
| CN (1) | CN1273992C (de) |
| AT (1) | ATE370498T1 (de) |
| AU (1) | AU2001294743A1 (de) |
| DE (1) | DE60130012T2 (de) |
| TW (1) | TW561480B (de) |
| WO (1) | WO2002027729A2 (de) |
Families Citing this family (162)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| US6618297B1 (en) * | 2002-08-02 | 2003-09-09 | Atmel Corporation | Method of establishing reference levels for sensing multilevel memory cell states |
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| JP4067956B2 (ja) * | 2002-12-20 | 2008-03-26 | スパンション エルエルシー | 不揮発性メモリの制御方法及び不揮発性メモリ |
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-
2000
- 2000-09-27 US US09/671,793 patent/US6538922B1/en not_active Expired - Lifetime
-
2001
- 2001-09-25 AU AU2001294743A patent/AU2001294743A1/en not_active Abandoned
- 2001-09-25 EP EP01975415A patent/EP1332500B1/de not_active Expired - Lifetime
- 2001-09-25 WO PCT/US2001/030123 patent/WO2002027729A2/en active IP Right Grant
- 2001-09-25 KR KR1020037004422A patent/KR100760886B1/ko active IP Right Grant
- 2001-09-25 DE DE60130012T patent/DE60130012T2/de not_active Expired - Lifetime
- 2001-09-25 AT AT01975415T patent/ATE370498T1/de not_active IP Right Cessation
- 2001-09-25 JP JP2002531423A patent/JP2004510286A/ja active Pending
- 2001-09-25 EP EP05077430A patent/EP1624461B1/de not_active Expired - Lifetime
- 2001-09-25 CN CNB018164498A patent/CN1273992C/zh not_active Expired - Lifetime
- 2001-09-27 TW TW090123977A patent/TW561480B/zh not_active IP Right Cessation
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2003
- 2003-01-24 US US10/350,874 patent/US6714449B2/en not_active Expired - Lifetime
- 2003-10-23 US US10/692,922 patent/US6873549B2/en not_active Expired - Lifetime
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|---|---|
| WO2002027729A3 (en) | 2002-12-12 |
| US20030112661A1 (en) | 2003-06-19 |
| EP1624461B1 (de) | 2012-07-25 |
| US6873549B2 (en) | 2005-03-29 |
| AU2001294743A1 (en) | 2002-04-08 |
| EP1332500B1 (de) | 2007-08-15 |
| EP1624461A2 (de) | 2006-02-08 |
| KR100760886B1 (ko) | 2007-09-21 |
| ATE370498T1 (de) | 2007-09-15 |
| US6538922B1 (en) | 2003-03-25 |
| CN1466765A (zh) | 2004-01-07 |
| JP2004510286A (ja) | 2004-04-02 |
| KR20030043976A (ko) | 2003-06-02 |
| US20040105307A1 (en) | 2004-06-03 |
| WO2002027729A2 (en) | 2002-04-04 |
| EP1332500A2 (de) | 2003-08-06 |
| CN1273992C (zh) | 2006-09-06 |
| EP1624461A3 (de) | 2006-07-12 |
| US6714449B2 (en) | 2004-03-30 |
| DE60130012T2 (de) | 2008-03-20 |
| TW561480B (en) | 2003-11-11 |
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