DE602004010316D1 - Magnetischer Direktzugriffspeicher mit hoher Selektivität - Google Patents

Magnetischer Direktzugriffspeicher mit hoher Selektivität

Info

Publication number
DE602004010316D1
DE602004010316D1 DE602004010316T DE602004010316T DE602004010316D1 DE 602004010316 D1 DE602004010316 D1 DE 602004010316D1 DE 602004010316 T DE602004010316 T DE 602004010316T DE 602004010316 T DE602004010316 T DE 602004010316T DE 602004010316 D1 DE602004010316 D1 DE 602004010316D1
Authority
DE
Germany
Prior art keywords
random access
access memory
high selectivity
magnetic random
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE602004010316T
Other languages
English (en)
Other versions
DE602004010316T2 (de
Inventor
Kyung-Jin Lee
Wan-Jun Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004010316D1 publication Critical patent/DE602004010316D1/de
Application granted granted Critical
Publication of DE602004010316T2 publication Critical patent/DE602004010316T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
    • G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
DE602004010316T 2003-01-07 2004-01-06 Magnetischer Direktzugriffspeicher mit hoher Selektivität Expired - Fee Related DE602004010316T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2003-0000778A KR100468861B1 (ko) 2003-01-07 2003-01-07 고선택성을 가지는 자기저항 메모리
KR2003000778 2003-01-07

Publications (2)

Publication Number Publication Date
DE602004010316D1 true DE602004010316D1 (de) 2008-01-10
DE602004010316T2 DE602004010316T2 (de) 2008-10-02

Family

ID=32501484

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004010316T Expired - Fee Related DE602004010316T2 (de) 2003-01-07 2004-01-06 Magnetischer Direktzugriffspeicher mit hoher Selektivität

Country Status (6)

Country Link
US (1) US7015555B2 (de)
EP (1) EP1437747B1 (de)
JP (1) JP2004214687A (de)
KR (1) KR100468861B1 (de)
CN (1) CN100456385C (de)
DE (1) DE602004010316T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988086B1 (ko) * 2003-11-14 2010-10-18 삼성전자주식회사 자기 모멘트가 낮은 프리 자성막을 구비하는 자기터널접합셀 및 이를 포함하는 자기램
US7630231B2 (en) * 2004-12-30 2009-12-08 Infineon Technologies Ag Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
US7061797B1 (en) * 2004-12-30 2006-06-13 Infineon Technologies Ag Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell
JP5796349B2 (ja) * 2011-05-23 2015-10-21 ソニー株式会社 記憶素子の製造方法
KR101801045B1 (ko) 2015-06-26 2017-11-27 심광선 목재 체결방법 및 장치

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5757695A (en) * 1997-02-05 1998-05-26 Motorola, Inc. Mram with aligned magnetic vectors
US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
US6166948A (en) * 1999-09-03 2000-12-26 International Business Machines Corporation Magnetic memory array with magnetic tunnel junction memory cells having flux-closed free layers
JP2001196661A (ja) * 1999-10-27 2001-07-19 Sony Corp 磁化制御方法、情報記憶方法、磁気機能素子および情報記憶素子
JP2001217482A (ja) * 2000-02-03 2001-08-10 Fujitsu Ltd 磁気センサ及びそれを使用する磁気記憶装置
EP1187103A3 (de) * 2000-08-04 2003-01-08 Matsushita Electric Industrial Co., Ltd. Magnetowiderstandsbauteil, Kopf und Speicherelement
JP3848072B2 (ja) * 2000-09-29 2006-11-22 富士通株式会社 磁気記録媒体及びこれを用いた磁気記憶装置
US6515341B2 (en) * 2001-02-26 2003-02-04 Motorola, Inc. Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrier
JP2002299725A (ja) * 2001-03-30 2002-10-11 Matsushita Electric Ind Co Ltd 磁気抵抗デバイス
JP3854836B2 (ja) * 2001-09-28 2006-12-06 キヤノン株式会社 垂直磁化膜を用いた磁気メモリの設計方法
US6760266B2 (en) * 2002-06-28 2004-07-06 Freescale Semiconductor, Inc. Sense amplifier and method for performing a read operation in a MRAM

Also Published As

Publication number Publication date
KR20040063382A (ko) 2004-07-14
US7015555B2 (en) 2006-03-21
JP2004214687A (ja) 2004-07-29
KR100468861B1 (ko) 2005-01-29
EP1437747A1 (de) 2004-07-14
CN100456385C (zh) 2009-01-28
US20040188830A1 (en) 2004-09-30
DE602004010316T2 (de) 2008-10-02
CN1558422A (zh) 2004-12-29
EP1437747B1 (de) 2007-11-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee