DE602005017899D1 - Widerstandsvariabler speicherbaustein und herstellungsverfahren - Google Patents

Widerstandsvariabler speicherbaustein und herstellungsverfahren

Info

Publication number
DE602005017899D1
DE602005017899D1 DE602005017899T DE602005017899T DE602005017899D1 DE 602005017899 D1 DE602005017899 D1 DE 602005017899D1 DE 602005017899 T DE602005017899 T DE 602005017899T DE 602005017899 T DE602005017899 T DE 602005017899T DE 602005017899 D1 DE602005017899 D1 DE 602005017899D1
Authority
DE
Germany
Prior art keywords
variable memory
manufacturing
memory component
memory device
resistant variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005017899T
Other languages
English (en)
Inventor
Kristy A Campbell
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE602005017899D1 publication Critical patent/DE602005017899D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
DE602005017899T 2004-07-19 2005-07-14 Widerstandsvariabler speicherbaustein und herstellungsverfahren Active DE602005017899D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/893,299 US7190048B2 (en) 2004-07-19 2004-07-19 Resistance variable memory device and method of fabrication
PCT/US2005/024899 WO2006019845A1 (en) 2004-07-19 2005-07-14 Resistance variable memory device and method of fabrication

Publications (1)

Publication Number Publication Date
DE602005017899D1 true DE602005017899D1 (de) 2010-01-07

Family

ID=35285580

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005017899T Active DE602005017899D1 (de) 2004-07-19 2005-07-14 Widerstandsvariabler speicherbaustein und herstellungsverfahren

Country Status (9)

Country Link
US (4) US7190048B2 (de)
EP (1) EP1769507B1 (de)
JP (2) JP5107037B2 (de)
KR (1) KR100917095B1 (de)
CN (1) CN100530432C (de)
AT (1) ATE450042T1 (de)
DE (1) DE602005017899D1 (de)
TW (1) TWI293509B (de)
WO (1) WO2006019845A1 (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7190048B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
DE102004054558A1 (de) * 2004-11-11 2006-05-24 Infineon Technologies Ag Verfahren zur Herstellung einer resistiv schaltenden Speicherzelle, hergestellte Speicherzelle sowie daraus aufgebautes Speicherbauelement
US7317200B2 (en) * 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
US7274034B2 (en) * 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7332735B2 (en) * 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7767992B2 (en) * 2005-08-09 2010-08-03 Ovonyx, Inc. Multi-layer chalcogenide devices
US7381982B2 (en) * 2005-08-26 2008-06-03 Macronix International Co., Ltd. Method for fabricating chalcogenide-applied memory
US20070045606A1 (en) * 2005-08-30 2007-03-01 Michele Magistretti Shaping a phase change layer in a phase change memory cell
US8188454B2 (en) * 2005-10-28 2012-05-29 Ovonyx, Inc. Forming a phase change memory with an ovonic threshold switch
US7692272B2 (en) * 2006-01-19 2010-04-06 Elpida Memory, Inc. Electrically rewritable non-volatile memory element and method of manufacturing the same
DE102006028977B4 (de) * 2006-06-23 2012-04-12 Qimonda Ag Sputterdepositions-Vorrichtung
US20080073751A1 (en) * 2006-09-21 2008-03-27 Rainer Bruchhaus Memory cell and method of manufacturing thereof
WO2008088599A2 (en) 2006-10-19 2008-07-24 Boise State University Forced ion migration for chalcogenide phase change memory device
US7977722B2 (en) * 2008-05-20 2011-07-12 Seagate Technology Llc Non-volatile memory with programmable capacitance
US7786463B2 (en) * 2008-05-20 2010-08-31 Seagate Technology Llc Non-volatile multi-bit memory with programmable capacitance
KR100983175B1 (ko) * 2008-07-03 2010-09-20 광주과학기술원 산화물막과 고체 전해질막을 구비하는 저항 변화 메모리소자, 및 이의 동작방법
KR100990215B1 (ko) * 2008-07-17 2010-10-29 한국전자통신연구원 상변화 메모리 소자 및 그 제조 방법
US8467236B2 (en) 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US8238146B2 (en) * 2008-08-01 2012-08-07 Boise State University Variable integrated analog resistor
US7825479B2 (en) * 2008-08-06 2010-11-02 International Business Machines Corporation Electrical antifuse having a multi-thickness dielectric layer
US8809829B2 (en) * 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US20110079709A1 (en) * 2009-10-07 2011-04-07 Campbell Kristy A Wide band sensor
US8284590B2 (en) 2010-05-06 2012-10-09 Boise State University Integratable programmable capacitive device
US8227785B2 (en) * 2010-11-11 2012-07-24 Micron Technology, Inc. Chalcogenide containing semiconductors with chalcogenide gradient
CN102832338B (zh) * 2012-09-06 2015-10-07 中国科学院上海微系统与信息技术研究所 一种限制结构相变存储器及其制作方法
US20140293676A1 (en) * 2013-03-03 2014-10-02 Adesto Technologies Corporation Programmable impedance memory elements and corresponding methods
KR101431656B1 (ko) * 2013-04-05 2014-08-21 한국과학기술연구원 저머늄 및 셀레늄을 이용한 칼코지나이드 스위칭 소자 및 그 제조방법
JP6772124B2 (ja) * 2015-03-31 2020-10-21 ソニーセミコンダクタソリューションズ株式会社 スイッチ素子および記憶装置
US10211623B2 (en) 2015-04-30 2019-02-19 Eton Solutions Limited Power supply control
US9583699B2 (en) 2015-06-01 2017-02-28 Boise State University Tunable variable resistance memory device
US9583703B2 (en) 2015-06-01 2017-02-28 Boise State University Tunable variable resistance memory device

Family Cites Families (164)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3622319A (en) 1966-10-20 1971-11-23 Western Electric Co Nonreflecting photomasks and methods of making same
US3868651A (en) 1970-08-13 1975-02-25 Energy Conversion Devices Inc Method and apparatus for storing and reading data in a memory having catalytic material to initiate amorphous to crystalline change in memory structure
US3743847A (en) 1971-06-01 1973-07-03 Motorola Inc Amorphous silicon film as a uv filter
US4267261A (en) * 1971-07-15 1981-05-12 Energy Conversion Devices, Inc. Method for full format imaging
US3980505A (en) * 1973-09-12 1976-09-14 Buckley William D Process of making a filament-type memory semiconductor device
US3961314A (en) * 1974-03-05 1976-06-01 Energy Conversion Devices, Inc. Structure and method for producing an image
US3966317A (en) * 1974-04-08 1976-06-29 Energy Conversion Devices, Inc. Dry process production of archival microform records from hard copy
US4177474A (en) 1977-05-18 1979-12-04 Energy Conversion Devices, Inc. High temperature amorphous semiconductor member and method of making the same
JPS5565365A (en) * 1978-11-07 1980-05-16 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
DE2901303C2 (de) 1979-01-15 1984-04-19 Max Planck Gesellschaft Zur Foerderung Der Wissenschaften E.V., 3400 Goettingen Festes Ionenleitermaterial, seine Verwendung und Verfahren zu dessen Herstellung
US4312938A (en) * 1979-07-06 1982-01-26 Drexler Technology Corporation Method for making a broadband reflective laser recording and data storage medium with absorptive underlayer
US4269935A (en) * 1979-07-13 1981-05-26 Ionomet Company, Inc. Process of doping silver image in chalcogenide layer
US4316946A (en) * 1979-12-03 1982-02-23 Ionomet Company, Inc. Surface sensitized chalcogenide product and process for making and using the same
US4499557A (en) * 1980-10-28 1985-02-12 Energy Conversion Devices, Inc. Programmable cell for use in programmable electronic arrays
US4405710A (en) 1981-06-22 1983-09-20 Cornell Research Foundation, Inc. Ion beam exposure of (g-Gex -Se1-x) inorganic resists
US4737379A (en) * 1982-09-24 1988-04-12 Energy Conversion Devices, Inc. Plasma deposited coatings, and low temperature plasma method of making same
US4545111A (en) 1983-01-18 1985-10-08 Energy Conversion Devices, Inc. Method for making, parallel preprogramming or field programming of electronic matrix arrays
US4608296A (en) 1983-12-06 1986-08-26 Energy Conversion Devices, Inc. Superconducting films and devices exhibiting AC to DC conversion
US4795657A (en) * 1984-04-13 1989-01-03 Energy Conversion Devices, Inc. Method of fabricating a programmable array
US4668968A (en) * 1984-05-14 1987-05-26 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4673957A (en) * 1984-05-14 1987-06-16 Energy Conversion Devices, Inc. Integrated circuit compatible thin film field effect transistor and method of making same
US4670763A (en) * 1984-05-14 1987-06-02 Energy Conversion Devices, Inc. Thin film field effect transistor
US4769338A (en) 1984-05-14 1988-09-06 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4843443A (en) * 1984-05-14 1989-06-27 Energy Conversion Devices, Inc. Thin film field effect transistor and method of making same
US4678679A (en) 1984-06-25 1987-07-07 Energy Conversion Devices, Inc. Continuous deposition of activated process gases
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4637895A (en) 1985-04-01 1987-01-20 Energy Conversion Devices, Inc. Gas mixtures for the vapor deposition of semiconductor material
US4664939A (en) * 1985-04-01 1987-05-12 Energy Conversion Devices, Inc. Vertical semiconductor processor
US4710899A (en) 1985-06-10 1987-12-01 Energy Conversion Devices, Inc. Data storage medium incorporating a transition metal for increased switching speed
US4671618A (en) * 1986-05-22 1987-06-09 Wu Bao Gang Liquid crystalline-plastic material having submillisecond switch times and extended memory
US4766471A (en) 1986-01-23 1988-08-23 Energy Conversion Devices, Inc. Thin film electro-optical devices
US4818717A (en) * 1986-06-27 1989-04-04 Energy Conversion Devices, Inc. Method for making electronic matrix arrays
US4728406A (en) * 1986-08-18 1988-03-01 Energy Conversion Devices, Inc. Method for plasma - coating a semiconductor body
US4845533A (en) 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
US4809044A (en) * 1986-08-22 1989-02-28 Energy Conversion Devices, Inc. Thin film overvoltage protection devices
US4788594A (en) 1986-10-15 1988-11-29 Energy Conversion Devices, Inc. Solid state electronic camera including thin film matrix of photosensors
US4853785A (en) 1986-10-15 1989-08-01 Energy Conversion Devices, Inc. Electronic camera including electronic signal storage cartridge
US4847674A (en) 1987-03-10 1989-07-11 Advanced Micro Devices, Inc. High speed interconnect system with refractory non-dogbone contacts and an active electromigration suppression mechanism
US4800526A (en) * 1987-05-08 1989-01-24 Gaf Corporation Memory element for information storage and retrieval system and associated process
US4891330A (en) * 1987-07-27 1990-01-02 Energy Conversion Devices, Inc. Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements
US4775425A (en) 1987-07-27 1988-10-04 Energy Conversion Devices, Inc. P and n-type microcrystalline semiconductor alloy material including band gap widening elements, devices utilizing same
US5272359A (en) 1988-04-07 1993-12-21 California Institute Of Technology Reversible non-volatile switch based on a TCNQ charge transfer complex
GB8910854D0 (en) 1989-05-11 1989-06-28 British Petroleum Co Plc Semiconductor device
US5159661A (en) 1990-10-05 1992-10-27 Energy Conversion Devices, Inc. Vertically interconnected parallel distributed processor
US5314772A (en) * 1990-10-09 1994-05-24 Arizona Board Of Regents High resolution, multi-layer resist for microlithography and method therefor
JPH0770731B2 (ja) * 1990-11-22 1995-07-31 松下電器産業株式会社 電気可塑性素子
US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US5341328A (en) 1991-01-18 1994-08-23 Energy Conversion Devices, Inc. Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5335219A (en) 1991-01-18 1994-08-02 Ovshinsky Stanford R Homogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5536947A (en) 1991-01-18 1996-07-16 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory element and arrays fabricated therefrom
US5596522A (en) 1991-01-18 1997-01-21 Energy Conversion Devices, Inc. Homogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elements
US5534711A (en) 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5406509A (en) * 1991-01-18 1995-04-11 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5534712A (en) 1991-01-18 1996-07-09 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5166758A (en) 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5128099A (en) 1991-02-15 1992-07-07 Energy Conversion Devices, Inc. Congruent state changeable optical memory material and device
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
JP2794348B2 (ja) * 1991-06-21 1998-09-03 キヤノン株式会社 記録媒体、その製造方法、情報処理装置
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5359205A (en) 1991-11-07 1994-10-25 Energy Conversion Devices, Inc. Electrically erasable memory elements characterized by reduced current and improved thermal stability
US5238862A (en) 1992-03-18 1993-08-24 Micron Technology, Inc. Method of forming a stacked capacitor with striated electrode
US5512328A (en) * 1992-08-07 1996-04-30 Hitachi, Ltd. Method for forming a pattern and forming a thin film used in pattern formation
US5350484A (en) 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
DE4318825C1 (de) * 1993-06-07 1994-06-09 Continental Ag Fahrzeugluftreifen
US5818749A (en) 1993-08-20 1998-10-06 Micron Technology, Inc. Integrated circuit memory device
BE1007902A3 (nl) * 1993-12-23 1995-11-14 Philips Electronics Nv Schakelelement met geheugen voorzien van schottky tunnelbarriere.
US5505719A (en) * 1994-06-30 1996-04-09 Mcneil-Ppc, Inc. Multilayered absorbent structures
US5500532A (en) * 1994-08-18 1996-03-19 Arizona Board Of Regents Personal electronic dosimeter
JP2643870B2 (ja) * 1994-11-29 1997-08-20 日本電気株式会社 半導体記憶装置の製造方法
US6676900B1 (en) * 1994-12-09 2004-01-13 Therox, Inc. Method for the preparation and delivery of gas-enriched fluids
US5543737A (en) 1995-02-10 1996-08-06 Energy Conversion Devices, Inc. Logical operation circuit employing two-terminal chalcogenide switches
US6420725B1 (en) 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
JP3363154B2 (ja) 1995-06-07 2003-01-08 ミクロン テクノロジー、インコーポレイテッド 不揮発性メモリセル内のマルチステート材料と共に使用するスタック／トレンチダイオード
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US5751012A (en) * 1995-06-07 1998-05-12 Micron Technology, Inc. Polysilicon pillar diode for use in a non-volatile memory cell
US5789758A (en) 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5869843A (en) 1995-06-07 1999-02-09 Micron Technology, Inc. Memory array having a multi-state element and method for forming such array or cells thereof
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5694054A (en) 1995-11-28 1997-12-02 Energy Conversion Devices, Inc. Integrated drivers for flat panel displays employing chalcogenide logic elements
US5591501A (en) * 1995-12-20 1997-01-07 Energy Conversion Devices, Inc. Optical recording medium having a plurality of discrete phase change data recording points
US6653733B1 (en) * 1996-02-23 2003-11-25 Micron Technology, Inc. Conductors in semiconductor devices
US5687112A (en) 1996-04-19 1997-11-11 Energy Conversion Devices, Inc. Multibit single cell memory element having tapered contact
US5851882A (en) 1996-05-06 1998-12-22 Micron Technology, Inc. ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
US5761115A (en) * 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
US5789277A (en) 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US5814527A (en) 1996-07-22 1998-09-29 Micron Technology, Inc. Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US5825046A (en) 1996-10-28 1998-10-20 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US6087674A (en) 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US5846889A (en) 1997-03-14 1998-12-08 The United States Of America As Represented By The Secretary Of The Navy Infrared transparent selenide glasses
US5998066A (en) 1997-05-16 1999-12-07 Aerial Imaging Corporation Gray scale mask and depth pattern transfer technique using inorganic chalcogenide glass
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US5933365A (en) 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US6011757A (en) * 1998-01-27 2000-01-04 Ovshinsky; Stanford R. Optical recording media having increased erasability
US6141241A (en) 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US5912839A (en) 1998-06-23 1999-06-15 Energy Conversion Devices, Inc. Universal memory element and method of programming same
US6388324B2 (en) * 1998-08-31 2002-05-14 Arizona Board Of Regents Self-repairing interconnections for electrical circuits
US6825489B2 (en) * 2001-04-06 2004-11-30 Axon Technologies Corporation Microelectronic device, structure, and system, including a memory structure having a variable programmable property and method of forming the same
US6487106B1 (en) * 1999-01-12 2002-11-26 Arizona Board Of Regents Programmable microelectronic devices and method of forming and programming same
US6635914B2 (en) * 2000-09-08 2003-10-21 Axon Technologies Corp. Microelectronic programmable device and methods of forming and programming the same
US6177338B1 (en) * 1999-02-08 2001-01-23 Taiwan Semiconductor Manufacturing Company Two step barrier process
US6072716A (en) 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
US6143604A (en) 1999-06-04 2000-11-07 Taiwan Semiconductor Manufacturing Company Method for fabricating small-size two-step contacts for word-line strapping on dynamic random access memory (DRAM)
US6350679B1 (en) * 1999-08-03 2002-02-26 Micron Technology, Inc. Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitry
US6914802B2 (en) * 2000-02-11 2005-07-05 Axon Technologies Corporation Microelectronic photonic structure and device and method of forming the same
US6563164B2 (en) * 2000-09-29 2003-05-13 Ovonyx, Inc. Compositionally modified resistive electrode
US6567293B1 (en) * 2000-09-29 2003-05-20 Ovonyx, Inc. Single level metal memory cell using chalcogenide cladding
US6555860B2 (en) * 2000-09-29 2003-04-29 Intel Corporation Compositionally modified resistive electrode
US6339544B1 (en) * 2000-09-29 2002-01-15 Intel Corporation Method to enhance performance of thermal resistor device
JP4025527B2 (ja) * 2000-10-27 2007-12-19 松下電器産業株式会社 メモリ、書き込み装置、読み出し装置およびその方法
US6950331B2 (en) * 2000-10-31 2005-09-27 The Regents Of The University Of California Organic bistable device and organic memory cells
US6653193B2 (en) * 2000-12-08 2003-11-25 Micron Technology, Inc. Resistance variable device
US6696355B2 (en) * 2000-12-14 2004-02-24 Ovonyx, Inc. Method to selectively increase the top resistance of the lower programming electrode in a phase-change memory
US6569705B2 (en) * 2000-12-21 2003-05-27 Intel Corporation Metal structure for a phase-change memory device
US6534781B2 (en) * 2000-12-26 2003-03-18 Ovonyx, Inc. Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6531373B2 (en) * 2000-12-27 2003-03-11 Ovonyx, Inc. Method of forming a phase-change memory cell using silicon on insulator low electrode in charcogenide elements
US6687427B2 (en) * 2000-12-29 2004-02-03 Intel Corporation Optic switch
US6727192B2 (en) * 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6348365B1 (en) * 2001-03-02 2002-02-19 Micron Technology, Inc. PCRAM cell manufacturing
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6511862B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Modified contact for programmable devices
US6511867B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Utilizing atomic layer deposition for programmable device
US6673700B2 (en) * 2001-06-30 2004-01-06 Ovonyx, Inc. Reduced area intersection between electrode and programming element
US6514805B2 (en) * 2001-06-30 2003-02-04 Intel Corporation Trench sidewall profile for device isolation
US6951805B2 (en) * 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6590807B2 (en) * 2001-08-02 2003-07-08 Intel Corporation Method for reading a structural phase-change memory
US6737312B2 (en) * 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6784018B2 (en) * 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6646902B2 (en) * 2001-08-30 2003-11-11 Micron Technology, Inc. Method of retaining memory state in a programmable conductor RAM
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
JP4214055B2 (ja) * 2001-09-01 2009-01-28 エナージー コンバーション デバイセス インコーポレイテッド 青色レーザおよび／またはプラズモンレンズを用いて光データ記憶検索システムにおいて増大されたデータ記憶
US6545287B2 (en) * 2001-09-07 2003-04-08 Intel Corporation Using selective deposition to form phase-change memory cells
US6690026B2 (en) * 2001-09-28 2004-02-10 Intel Corporation Method of fabricating a three-dimensional array of active media
US6566700B2 (en) * 2001-10-11 2003-05-20 Ovonyx, Inc. Carbon-containing interfacial layer for phase-change memory
US6545907B1 (en) * 2001-10-30 2003-04-08 Ovonyx, Inc. Technique and apparatus for performing write operations to a phase change material memory device
US6576921B2 (en) * 2001-11-08 2003-06-10 Intel Corporation Isolating phase change material memory cells
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) * 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6512241B1 (en) * 2001-12-31 2003-01-28 Intel Corporation Phase change material memory device
US6809362B2 (en) 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6849868B2 (en) * 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
CN100514695C (zh) 2002-03-15 2009-07-15 阿克松技术公司 微电子可编程构件
US6671710B2 (en) * 2002-05-10 2003-12-30 Energy Conversion Devices, Inc. Methods of computing with digital multistate phase change materials
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
US6918382B2 (en) * 2002-08-26 2005-07-19 Energy Conversion Devices, Inc. Hydrogen powered scooter
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US6867996B2 (en) 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7449225B2 (en) * 2002-09-13 2008-11-11 Panasonic Corporation Information recording medium and method for manufacturing the same
US6795338B2 (en) * 2002-12-13 2004-09-21 Intel Corporation Memory having access devices using phase change material such as chalcogenide
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
JP4254293B2 (ja) * 2003-03-25 2009-04-15 株式会社日立製作所 記憶装置
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7190048B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell

Also Published As

Publication number Publication date
US7868310B2 (en) 2011-01-11
ATE450042T1 (de) 2009-12-15
US7282783B2 (en) 2007-10-16
JP5364762B2 (ja) 2013-12-11
JP2011258971A (ja) 2011-12-22
US20080164456A1 (en) 2008-07-10
US7348209B2 (en) 2008-03-25
WO2006019845A1 (en) 2006-02-23
KR100917095B1 (ko) 2009-09-15
JP2008507151A (ja) 2008-03-06
EP1769507B1 (de) 2009-11-25
CN100530432C (zh) 2009-08-19
CN101019191A (zh) 2007-08-15
EP1769507A1 (de) 2007-04-04
US20070138598A1 (en) 2007-06-21
US7190048B2 (en) 2007-03-13
KR20070034116A (ko) 2007-03-27
US20060289851A1 (en) 2006-12-28
JP5107037B2 (ja) 2012-12-26
TWI293509B (en) 2008-02-11
TW200620649A (en) 2006-06-16
US20060012008A1 (en) 2006-01-19

Similar Documents

Publication Publication Date Title
DE602005017899D1 (de) Widerstandsvariabler speicherbaustein und herstellungsverfahren
DE602005007159D1 (de) Hintergrundmusik und Dia-Show Verarbeitung mit visuellen Effekten, die auf Eigenschaften der ausgewaehlten Musik beruhen.
DE602004018001D1 (de) Gegen hohe temperaturen beständige dehnfähige heissschmelzklebstoffzusammensetzung
TWI319907B (en) Heat sink, integrated circuit package and the method of fabricating thereof
FI20040592A0 (fi) Lämmön johtaminen upotetusta komponentista
DE602005003178D1 (de) Fels- bzw. Gesteinsbrechwerkzeug und Schmierverfahren
EP1829945A4 (de) Film, kieselfilm und herstellungsverfahren dafür, zusammensetzung zur ausbildung des kieselfilms sowie elektronischer bauteil
PL1777579T3 (pl) Jednostka podświetlająca wyposażona w warstwę rozpraszającą ciepło, wyświetlacz wyposażony w warstwę rozpraszającą ciepło oraz sposób wytwarzania warstwy rozpraszającej ciepło
DE602005026473D1 (de) Halogenfreie, feuerfeste Zusammensetzung für Polymere mit niedriger Wärmeabgabe
DK1864324T3 (da) Indretning og fremgangsmåde til bestemmelse af temperaturen på et kølelegeme
EA200701074A1 (ru) Устройство каротажа перфорационных отверстий и способ
ATE400594T1 (de) Alkali-quellbare assoziative polymere, methode und zusamensetzungen
DE602005020241D1 (de) Rührer, Rührverfahren und Schmelzofen mit Rührer
ATE460274T1 (de) Wärmeschrumpfbare, mehrschichtige folie und herstellungsverfahren dafür
ATE521611T1 (de) 1,4-dihydropyridin-kondensierte heterozyklen, herstellungsverfahren dafür, verwendung und zusammensetzungen damit
FR2913358B1 (fr) Dispositif d&#39;allumage d&#39;une composition aluminothermique, creuset l&#39;incorporant et procedes associes.
ATE441252T1 (de) Verfahren, zugangspunkt und integrierte schaltung zum kanalwechsel
NO20051850D0 (no) Infrarod deteksjon av gass - diffraktiv.
GB2438567B (en) Free-standing substrate, method for producing the same and semiconductor light-emitting device
TW200733352A (en) Phase change memory device and method of forming the same
NO20040582L (no) Additiver for inhibering av gasshydratdannelse.
DE60311691D1 (de) Beschichtung mit Gasbarriereeigenschaften und Herstellungsverfahren
NO20052262D0 (no) Fremgangsmate til fremstilling av 4-substituerte 2,2,6,6-tetrametyl-piperidin-N-oksy- og 2,2,6,6-tetrametyl-piperidin-N-hydroksy-forbindelser
WO2007119123A3 (en) Interconnects and heat dissipators based on nanostructures
SG116564A1 (en) Substrate contact and method of forming the same.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition