DE60225216D1 - Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung - Google Patents

Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung

Info

Publication number
DE60225216D1
DE60225216D1 DE60225216T DE60225216T DE60225216D1 DE 60225216 D1 DE60225216 D1 DE 60225216D1 DE 60225216 T DE60225216 T DE 60225216T DE 60225216 T DE60225216 T DE 60225216T DE 60225216 D1 DE60225216 D1 DE 60225216D1
Authority
DE
Germany
Prior art keywords
making
lithographic apparatus
lithographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60225216T
Other languages
English (en)
Other versions
DE60225216T2 (de
Inventor
Martinus Hendrikus An Leenders
Johannes Hubertus Joseph Moors
Erik Roelof Loopstra
Noud Jan Gilissen
Markus F A Eurlings
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASML Netherlands BV
Original Assignee
ASML Netherlands BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASML Netherlands BV filed Critical ASML Netherlands BV
Publication of DE60225216D1 publication Critical patent/DE60225216D1/de
Application granted granted Critical
Publication of DE60225216T2 publication Critical patent/DE60225216T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70066—Size and form of the illuminated area in the mask plane, e.g. reticle masking blades or blinds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
DE60225216T 2001-09-07 2002-09-06 Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung Expired - Fee Related DE60225216T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP01307613 2001-09-07
EP01307613 2001-09-07

Publications (2)

Publication Number Publication Date
DE60225216D1 true DE60225216D1 (de) 2008-04-10
DE60225216T2 DE60225216T2 (de) 2009-03-05

Family

ID=8182249

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60225216T Expired - Fee Related DE60225216T2 (de) 2001-09-07 2002-09-06 Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung

Country Status (5)

Country Link
US (1) US6741329B2 (de)
JP (1) JP3836418B2 (de)
KR (1) KR100551209B1 (de)
DE (1) DE60225216T2 (de)
TW (1) TWI251721B (de)

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WO2005040927A2 (en) * 2003-10-18 2005-05-06 Carl Zeiss Smt Ag Device and method for illumination dose adjustments in microlithography
US7023524B2 (en) * 2003-12-18 2006-04-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7030958B2 (en) 2003-12-31 2006-04-18 Asml Netherlands B.V. Optical attenuator device, radiation system and lithographic apparatus therewith and device manufacturing method
US7145640B2 (en) * 2004-03-22 2006-12-05 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and variable attenuator
US7119883B2 (en) 2004-10-13 2006-10-10 Asml Holding N.V. Correcting variations in the intensity of light within an illumination field without distorting the telecentricity of the light
US7369216B2 (en) * 2004-10-15 2008-05-06 Asml Netherlands B.V. Lithographic system, method for adapting transmission characteristics of an optical pathway within a lithographic system, semiconductor device, method of manufacturing a reflective element for use in a lithographic system, and reflective element manufactured thereby
US7260171B1 (en) * 2004-10-25 2007-08-21 General Electric Company Apparatus for acquisition of CT data with penumbra attenuation calibration
AU2005302497A1 (en) * 2004-10-29 2006-05-11 Smith & Nephew, Inc. Bioabsorbable polymers comprising calcium carbonate
US8545866B2 (en) 2004-10-29 2013-10-01 Smith & Nephew, Inc. Bioabsorbable polymers
US20060103828A1 (en) * 2004-11-17 2006-05-18 David Douglas J Adjustable illumination blade assembly for photolithography scanners
US7583362B2 (en) * 2004-11-23 2009-09-01 Infineon Technologies Ag Stray light feedback for dose control in semiconductor lithography systems
US7145634B2 (en) * 2004-12-01 2006-12-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102004063314A1 (de) * 2004-12-23 2006-07-13 Carl Zeiss Smt Ag Filtereinrichtung für die Kompensation einer asymmetrischen Pupillenausleuchtung
US7088527B2 (en) * 2004-12-28 2006-08-08 Asml Holding N.V. Uniformity correction system having light leak and shadow compensation
US20060139784A1 (en) * 2004-12-28 2006-06-29 Asml Holding N.V. Uniformity correction system having light leak compensation
EP1894063A1 (de) * 2005-06-21 2008-03-05 Carl Zeiss SMT AG Doppelt facettiertes beleuchtungssystem mit abschwächungselementen am pupillenfacettenspiegel
US7375353B2 (en) * 2005-09-13 2008-05-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7532308B2 (en) * 2005-09-13 2009-05-12 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2007039257A1 (en) * 2005-10-03 2007-04-12 Firma Carl Zeiss Smt Ag Illumination system comprising an otpical filter
KR20080059625A (ko) * 2005-10-04 2008-06-30 칼 짜이스 에스엠테 아게 리소그래피 장치 및 제어 방법
JP2007335849A (ja) * 2006-05-17 2007-12-27 Canon Inc 遮光装置および露光装置
US7990520B2 (en) * 2006-12-18 2011-08-02 Carl Zeiss Smt Gmbh Microlithography illumination systems, components and methods
US7843549B2 (en) * 2007-05-23 2010-11-30 Asml Holding N.V. Light attenuating filter for correcting field dependent ellipticity and uniformity
DE102007041004A1 (de) * 2007-08-29 2009-03-05 Carl Zeiss Smt Ag Beleuchtungsoptik für die EUV-Mikrolithografie
ATE533164T1 (de) * 2007-09-17 2011-11-15 Noliac As Mehrblatt-kollimator mit einem elektromechanischen drehmotor und betriebsverfahren
DE102008013229B4 (de) * 2007-12-11 2015-04-09 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikrolithographie
US8908151B2 (en) 2008-02-14 2014-12-09 Nikon Corporation Illumination optical system, exposure apparatus, device manufacturing method, compensation filter, and exposure optical system
KR101258344B1 (ko) * 2008-10-31 2013-04-30 칼 짜이스 에스엠티 게엠베하 Ｅｕｖ 마이크로리소그래피용 조명 광학 기기
JP5689461B2 (ja) * 2009-06-09 2015-03-25 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置、極端紫外線の反射を制御する方法、及びマスキングデバイス
DE102011005940A1 (de) 2011-03-23 2012-09-27 Carl Zeiss Smt Gmbh EUV-Spiegelanordnung, optisches System mit EUV-Spiegelanordnung und Verfahren zum Betreiben eines optischen Systems mit EUV-Spiegelanordnung
DE102011077234A1 (de) 2011-06-08 2012-12-13 Carl Zeiss Smt Gmbh EUV-Spiegelanordnung, optisches System mit EUV-Spiegelanordnung und Verfahren zum Betreiben eines optischen Systems mit EUV-Spiegelanordnung
KR101952465B1 (ko) 2011-03-23 2019-02-26 칼 짜이스 에스엠테 게엠베하 Ｅｕｖ 미러 배열체, ｅｕｖ 미러 배열체를 포함하는 광학 시스템 및 ｅｕｖ 미러 배열체를 포함하는 광학 시스템을 작동시키는 방법
EP2524718A1 (de) * 2011-05-17 2012-11-21 Deutsches Krebsforschungszentrum Blattmodul für Mehrblatt-Kollimator und Mehrblatt-Kollimator
DE102012205886A1 (de) * 2012-04-11 2013-10-17 Carl Zeiss Smt Gmbh Beleuchtungsintensitäts-Korrekturvorrichtung zur Vorgabe einer Beleuchtungsintensität über ein Beleuchtungsfeld einer lithographischen Projektionsbelichtungsanlage
WO2015009619A1 (en) * 2013-07-15 2015-01-22 Kla-Tencor Corporation Producing resist layers using fine segmentation
CN106062636B (zh) * 2014-02-24 2018-11-30 Asml荷兰有限公司 光刻系统
US10642158B2 (en) * 2017-11-29 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Method of controlling reticle masking blade positioning to minimize impact on critical dimension uniformity and device for controlling reticle masking blade positioning

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0480760A (ja) 1990-07-23 1992-03-13 Fujitsu Ltd 照射装置
US5437946A (en) * 1994-03-03 1995-08-01 Nikon Precision Inc. Multiple reticle stitching for scanning exposure system
JP3630807B2 (ja) * 1994-12-28 2005-03-23 キヤノン株式会社 走査露光装置及び当該走査露光装置を用いたデバイスの製造方法
EP0720056B1 (de) 1994-12-28 1999-10-06 Canon Kabushiki Kaisha Beleuchtungssystem und Abtastbelichtungsapparat
KR960042207A (ko) * 1995-05-17 1996-12-21 김광호 투영노광방법 및 이에 사용되는 포토마스크
US6013401A (en) * 1997-03-31 2000-01-11 Svg Lithography Systems, Inc. Method of controlling illumination field to reduce line width variation
JPH1126379A (ja) 1997-05-09 1999-01-29 Canon Inc 露光装置およびデバイス製造方法
KR100273252B1 (ko) * 1997-12-19 2000-12-15 김영환 웨이퍼 주변부 노광장치
JPH11219893A (ja) 1998-02-04 1999-08-10 Nikon Corp 露光装置
EP1291721B1 (de) * 2001-09-07 2008-02-27 ASML Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung

Also Published As

Publication number Publication date
US6741329B2 (en) 2004-05-25
US20030063266A1 (en) 2003-04-03
TWI251721B (en) 2006-03-21
KR20030022077A (ko) 2003-03-15
JP2003178969A (ja) 2003-06-27
KR100551209B1 (ko) 2006-02-14
DE60225216T2 (de) 2009-03-05
JP3836418B2 (ja) 2006-10-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee