DE60301112D1 - Digitale Speicheranordnung - Google Patents
Digitale SpeicheranordnungInfo
- Publication number
- DE60301112D1 DE60301112D1 DE60301112T DE60301112T DE60301112D1 DE 60301112 D1 DE60301112 D1 DE 60301112D1 DE 60301112 T DE60301112 T DE 60301112T DE 60301112 T DE60301112 T DE 60301112T DE 60301112 D1 DE60301112 D1 DE 60301112D1
- Authority
- DE
- Germany
- Prior art keywords
- digital memory
- memory arrangement
- arrangement
- digital
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
- G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5002—Characteristic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/50—Marginal testing, e.g. race, voltage or current testing
- G11C2029/5006—Current
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US232363 | 1994-04-25 | ||
| US10/232,363 US6791865B2 (en) | 2002-09-03 | 2002-09-03 | Memory device capable of calibration and calibration methods therefor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60301112D1 true DE60301112D1 (de) | 2005-09-01 |
| DE60301112T2 DE60301112T2 (de) | 2006-03-30 |
Family
ID=31976986
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60301112T Expired - Lifetime DE60301112T2 (de) | 2002-09-03 | 2003-09-02 | Digitale Speicheranordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6791865B2 (de) |
| EP (1) | EP1403874B1 (de) |
| JP (1) | JP2004095157A (de) |
| CN (1) | CN100520957C (de) |
| DE (1) | DE60301112T2 (de) |
| TW (1) | TW200404307A (de) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7173846B2 (en) * | 2003-02-13 | 2007-02-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Magnetic RAM and array architecture using a two transistor, one MTJ cell |
| KR100615600B1 (ko) * | 2004-08-09 | 2006-08-25 | 삼성전자주식회사 | 고집적 자기램 소자 및 그 제조방법 |
| US6952364B2 (en) * | 2003-03-03 | 2005-10-04 | Samsung Electronics Co., Ltd. | Magnetic tunnel junction structures and methods of fabrication |
| US6999339B2 (en) * | 2003-04-22 | 2006-02-14 | Micron Technology, Inc. | Integrated circuit including sensor to sense environmental data, method of compensating an MRAM integrated circuit for the effects of an external magnetic field, MRAM integrated circuit, and method of testing |
| US7116576B2 (en) * | 2003-07-07 | 2006-10-03 | Hewlett-Packard Development Company, L.P. | Sensing the state of a storage cell including a magnetic element |
| KR100835275B1 (ko) * | 2004-08-12 | 2008-06-05 | 삼성전자주식회사 | 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들 |
| US7372722B2 (en) * | 2003-09-29 | 2008-05-13 | Samsung Electronics Co., Ltd. | Methods of operating magnetic random access memory devices including heat-generating structures |
| KR100615089B1 (ko) * | 2004-07-14 | 2006-08-23 | 삼성전자주식회사 | 낮은 구동 전류를 갖는 자기 램 |
| US7369428B2 (en) * | 2003-09-29 | 2008-05-06 | Samsung Electronics Co., Ltd. | Methods of operating a magnetic random access memory device and related devices and structures |
| KR100568512B1 (ko) * | 2003-09-29 | 2006-04-07 | 삼성전자주식회사 | 열발생층을 갖는 자기열 램셀들 및 이를 구동시키는 방법들 |
| US6990030B2 (en) * | 2003-10-21 | 2006-01-24 | Hewlett-Packard Development Company, L.P. | Magnetic memory having a calibration system |
| JP2005151631A (ja) * | 2003-11-12 | 2005-06-09 | Mitsubishi Electric Corp | 半導体装置および過電流の基準レベルのデータ設定方法 |
| US7082050B2 (en) * | 2003-11-30 | 2006-07-25 | Union Semiconductor Technology Corporation | Method to equalize word current circuitry |
| US7126844B2 (en) * | 2003-11-30 | 2006-10-24 | Union Semiconductor Technology Corporation | Apparatus to improve stability of an MRAM over process and operational variations |
| US7023753B2 (en) * | 2003-11-30 | 2006-04-04 | Union Semiconductor Technology Corporation | Current controlled word and sense source |
| US7054185B2 (en) * | 2003-11-30 | 2006-05-30 | Union Semiconductor Technology Corporation | Optimized MRAM current sources |
| US7113422B2 (en) * | 2003-11-30 | 2006-09-26 | Union Semiconductor Technology Corporation | Method for optimizing MRAM circuit performance |
| US6850430B1 (en) * | 2003-12-02 | 2005-02-01 | Hewlett-Packard Development Company, L.P. | Regulating a magnetic memory cell write current |
| US6980455B2 (en) * | 2004-02-03 | 2005-12-27 | Hewlett-Packard Development Company, L.P. | Remote sensed pre-amplifier for cross-point arrays |
| US7079438B2 (en) * | 2004-02-17 | 2006-07-18 | Hewlett-Packard Development Company, L.P. | Controlled temperature, thermal-assisted magnetic memory device |
| KR100541557B1 (ko) * | 2004-04-13 | 2006-01-10 | 삼성전자주식회사 | 메모리 모듈 및 이 모듈의 반도체 메모리 장치의 임피던스교정 방법 |
| US7635993B2 (en) * | 2004-05-18 | 2009-12-22 | Nxp B.V. | Digital magnetic current sensor and logic |
| US7304905B2 (en) | 2004-05-24 | 2007-12-04 | Intel Corporation | Throttling memory in response to an internal temperature of a memory device |
| US7222052B2 (en) * | 2004-06-25 | 2007-05-22 | Intel Corporation | Temperature adaptive ferro-electric memory access parameters |
| US7085183B2 (en) * | 2004-07-13 | 2006-08-01 | Headway Technologies, Inc. | Adaptive algorithm for MRAM manufacturing |
| KR100660539B1 (ko) * | 2004-07-29 | 2006-12-22 | 삼성전자주식회사 | 자기 기억 소자 및 그 형성 방법 |
| US7523285B2 (en) * | 2004-08-20 | 2009-04-21 | Intel Corporation | Thermal memory control |
| US7068533B2 (en) * | 2004-09-30 | 2006-06-27 | Infineon Technologies Ag | Resistive memory cell configuration and method for sensing resistance values |
| KR100564640B1 (ko) | 2005-02-16 | 2006-03-28 | 삼성전자주식회사 | 온도측정기 동작지시신호 발생기 및 이를 구비하는 반도체메모리 장치 |
| US7246022B2 (en) * | 2005-06-20 | 2007-07-17 | Intel Corporation | Initiation of differential link retraining upon temperature excursion |
| US7511990B2 (en) * | 2005-09-30 | 2009-03-31 | Everspin Technologies, Inc. | Magnetic tunnel junction temperature sensors |
| JP4830437B2 (ja) * | 2005-10-03 | 2011-12-07 | 日本電気株式会社 | 磁気ランダムアクセスメモリ |
| KR101434398B1 (ko) * | 2007-05-03 | 2014-09-23 | 삼성전자주식회사 | 고전압 발생 회로를 포함하는 플래시 메모리 장치 및그것의 동작 방법 |
| US8100228B2 (en) * | 2007-10-12 | 2012-01-24 | D B Industries, Inc. | Portable anchorage assembly |
| US7719884B2 (en) * | 2008-05-19 | 2010-05-18 | Qimonda Ag | Integrated circuit, cell arrangement, method of manufacturing an integrated circuit, method of operating an integrated circuit, and memory module |
| KR101434400B1 (ko) * | 2008-07-09 | 2014-08-27 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 메모리 시스템 및 그것의 관리방법 |
| US7804709B2 (en) * | 2008-07-18 | 2010-09-28 | Seagate Technology Llc | Diode assisted switching spin-transfer torque memory unit |
| US8054677B2 (en) | 2008-08-07 | 2011-11-08 | Seagate Technology Llc | Magnetic memory with strain-assisted exchange coupling switch |
| US8223532B2 (en) | 2008-08-07 | 2012-07-17 | Seagate Technology Llc | Magnetic field assisted STRAM cells |
| JP5188328B2 (ja) * | 2008-08-29 | 2013-04-24 | 株式会社日立製作所 | 半導体装置 |
| US7746687B2 (en) | 2008-09-30 | 2010-06-29 | Seagate Technology, Llc | Thermally assisted multi-bit MRAM |
| US8487390B2 (en) * | 2008-10-08 | 2013-07-16 | Seagate Technology Llc | Memory cell with stress-induced anisotropy |
| US20100091564A1 (en) * | 2008-10-10 | 2010-04-15 | Seagate Technology Llc | Magnetic stack having reduced switching current |
| US8217478B2 (en) * | 2008-10-10 | 2012-07-10 | Seagate Technology Llc | Magnetic stack with oxide to reduce switching current |
| US8053255B2 (en) * | 2009-03-03 | 2011-11-08 | Seagate Technology Llc | STRAM with compensation element and method of making the same |
| KR101161745B1 (ko) * | 2009-06-05 | 2012-07-02 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 |
| US8472274B2 (en) * | 2011-03-02 | 2013-06-25 | Apple Inc. | Using temperature sensors with a memory device |
| US8462537B2 (en) * | 2011-03-21 | 2013-06-11 | Intel Corporation | Method and apparatus to reset a phase change memory and switch (PCMS) memory cell |
| US8924765B2 (en) * | 2011-07-03 | 2014-12-30 | Ambiq Micro, Inc. | Method and apparatus for low jitter distributed clock calibration |
| CN103023280B (zh) * | 2012-08-27 | 2015-04-01 | 常熟开关制造有限公司(原常熟开关厂） | 带散热器的变换器失电后的热记忆方法 |
| JP2017139399A (ja) * | 2016-02-05 | 2017-08-10 | Tdk株式会社 | 磁気メモリ |
| US9728242B1 (en) | 2016-03-04 | 2017-08-08 | Kabushiki Kaisha Toshiba | Memory device |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3488529A (en) * | 1966-12-14 | 1970-01-06 | Sperry Rand Corp | Temperature sensing current source |
| NL162772C (nl) * | 1969-10-31 | 1980-06-16 | Philips Nv | Driedemensionale geheugeninrichting met magnetische ge- heugenelementen. |
| US4437173A (en) * | 1981-07-16 | 1984-03-13 | Ampex Corporation | Core memory controlled by auxiliary core |
| US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
| US5640343A (en) * | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
| JP3127953B2 (ja) * | 1996-08-09 | 2001-01-29 | 日本電気株式会社 | 半導体記憶装置 |
| US6259644B1 (en) * | 1997-11-20 | 2001-07-10 | Hewlett-Packard Co | Equipotential sense methods for resistive cross point memory cell arrays |
| US6111781A (en) * | 1998-08-03 | 2000-08-29 | Motorola, Inc. | Magnetic random access memory array divided into a plurality of memory banks |
| US6055178A (en) * | 1998-12-18 | 2000-04-25 | Motorola, Inc. | Magnetic random access memory with a reference memory array |
| US6369712B2 (en) * | 1999-05-17 | 2002-04-09 | The Goodyear Tire & Rubber Company | Response adjustable temperature sensor for transponder |
| US6188615B1 (en) * | 1999-10-29 | 2001-02-13 | Hewlett-Packard Company | MRAM device including digital sense amplifiers |
| US6128239A (en) * | 1999-10-29 | 2000-10-03 | Hewlett-Packard | MRAM device including analog sense amplifiers |
| US6185143B1 (en) * | 2000-02-04 | 2001-02-06 | Hewlett-Packard Company | Magnetic random access memory (MRAM) device including differential sense amplifiers |
| US6317376B1 (en) * | 2000-06-20 | 2001-11-13 | Hewlett-Packard Company | Reference signal generation for magnetic random access memory devices |
| US6385082B1 (en) * | 2000-11-08 | 2002-05-07 | International Business Machines Corp. | Thermally-assisted magnetic random access memory (MRAM) |
| US6476716B1 (en) * | 2000-11-15 | 2002-11-05 | Dallas Semiconductor Corporation | Temperature-controlled variable resistor |
| US6603678B2 (en) * | 2001-01-11 | 2003-08-05 | Hewlett-Packard Development Company, L.P. | Thermally-assisted switching of magnetic memory elements |
| US7126778B2 (en) * | 2001-02-06 | 2006-10-24 | International Business Machines Corporation | Process of dynamically adjusting the operating parameters of a computer storage device according to environmental conditions |
| US6404671B1 (en) * | 2001-08-21 | 2002-06-11 | International Business Machines Corporation | Data-dependent field compensation for writing magnetic random access memories |
| US6608790B2 (en) * | 2001-12-03 | 2003-08-19 | Hewlett-Packard Development Company, L.P. | Write current compensation for temperature variations in memory arrays |
-
2002
- 2002-09-03 US US10/232,363 patent/US6791865B2/en not_active Expired - Lifetime
-
2003
- 2003-03-19 TW TW092106084A patent/TW200404307A/zh unknown
- 2003-06-03 CN CNB031363792A patent/CN100520957C/zh not_active Expired - Lifetime
- 2003-08-28 JP JP2003303860A patent/JP2004095157A/ja not_active Withdrawn
- 2003-09-02 DE DE60301112T patent/DE60301112T2/de not_active Expired - Lifetime
- 2003-09-02 EP EP03255479A patent/EP1403874B1/de not_active Expired - Lifetime
-
2004
- 2004-01-08 US US10/753,298 patent/US6791874B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1403874A1 (de) | 2004-03-31 |
| TW200404307A (en) | 2004-03-16 |
| DE60301112T2 (de) | 2006-03-30 |
| CN1487525A (zh) | 2004-04-07 |
| US6791874B2 (en) | 2004-09-14 |
| CN100520957C (zh) | 2009-07-29 |
| EP1403874B1 (de) | 2005-07-27 |
| JP2004095157A (ja) | 2004-03-25 |
| US20040141370A1 (en) | 2004-07-22 |
| US20040042262A1 (en) | 2004-03-04 |
| US6791865B2 (en) | 2004-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: SAMSUNG ELECTRONICS CO., LTD., SUWON, GYEONGGI, KR |