DE60305217D1 - Speichervorrichtung mit Schalter für hohe Spannungen - Google Patents

Speichervorrichtung mit Schalter für hohe Spannungen

Info

Publication number
DE60305217D1
DE60305217D1 DE60305217T DE60305217T DE60305217D1 DE 60305217 D1 DE60305217 D1 DE 60305217D1 DE 60305217 T DE60305217 T DE 60305217T DE 60305217 T DE60305217 T DE 60305217T DE 60305217 D1 DE60305217 D1 DE 60305217D1
Authority
DE
Germany
Prior art keywords
switch
storage device
high voltages
voltages
storage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60305217T
Other languages
English (en)
Other versions
DE60305217T2 (de
Inventor
Douglas D Smith
Myron Buer
Bassem Radieddine
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Broadcom Corp
Original Assignee
Broadcom Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Broadcom Corp filed Critical Broadcom Corp
Application granted granted Critical
Publication of DE60305217D1 publication Critical patent/DE60305217D1/de
Publication of DE60305217T2 publication Critical patent/DE60305217T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE60305217T 2002-01-08 2003-01-08 Speichervorrichtung mit Schalter für hohe Spannungen Expired - Lifetime DE60305217T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/041,296 US6693819B2 (en) 2002-01-08 2002-01-08 High voltage switch circuitry
US41296 2002-01-08

Publications (2)

Publication Number Publication Date
DE60305217D1 true DE60305217D1 (de) 2006-06-22
DE60305217T2 DE60305217T2 (de) 2007-03-01

Family

ID=21915799

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60305217T Expired - Lifetime DE60305217T2 (de) 2002-01-08 2003-01-08 Speichervorrichtung mit Schalter für hohe Spannungen

Country Status (3)

Country Link
US (3) US6693819B2 (de)
EP (1) EP1327993B1 (de)
DE (1) DE60305217T2 (de)

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US6836145B2 (en) * 2002-06-06 2004-12-28 Micron Technology, Inc. Programming circuit and method having extended duration programming capabilities
US6700176B2 (en) * 2002-07-18 2004-03-02 Broadcom Corporation MOSFET anti-fuse structure and method for making same
US7009883B2 (en) * 2003-02-27 2006-03-07 Broadcom Corporation Automatic programming time selection for one time programmable memory
US6707696B1 (en) * 2003-05-15 2004-03-16 Broadcom Corporation Hacker-proof one time programmable memory
DE10333911B3 (de) * 2003-07-25 2005-06-02 Diehl Ako Stiftung & Co. Kg Kaskadierbare Anordnung von Schaltersätzen
US7145370B2 (en) * 2003-09-05 2006-12-05 Impinj, Inc. High-voltage switches in single-well CMOS processes
US7177182B2 (en) * 2004-03-30 2007-02-13 Impinj, Inc. Rewriteable electronic fuses
US7242614B2 (en) * 2004-03-30 2007-07-10 Impinj, Inc. Rewriteable electronic fuses
US7388420B2 (en) * 2004-03-30 2008-06-17 Impinj, Inc. Rewriteable electronic fuses
JP4282529B2 (ja) * 2004-04-07 2009-06-24 株式会社東芝 半導体集積回路装置及びそのプログラム方法
US7283390B2 (en) * 2004-04-21 2007-10-16 Impinj, Inc. Hybrid non-volatile memory
US8111558B2 (en) 2004-05-05 2012-02-07 Synopsys, Inc. pFET nonvolatile memory
US7136303B2 (en) * 2004-08-31 2006-11-14 Broadcom Corporation System and method using a one-time programmable memory cell
US20060072748A1 (en) * 2004-10-01 2006-04-06 Mark Buer CMOS-based stateless hardware security module
US8160244B2 (en) 2004-10-01 2012-04-17 Broadcom Corporation Stateless hardware security module
US8166296B2 (en) * 2004-10-20 2012-04-24 Broadcom Corporation User authentication system
US8027665B2 (en) * 2004-10-22 2011-09-27 Broadcom Corporation System and method for protecting data in a synchronized environment
US8584200B2 (en) * 2004-10-22 2013-11-12 Broadcom Corporation Multiple time outs for applications in a mobile device
US7860486B2 (en) * 2004-10-22 2010-12-28 Broadcom Corporation Key revocation in a mobile device
US20060152601A1 (en) * 2005-01-13 2006-07-13 Micron Technology, Inc. Low cost digital camera with one-time programmable memory
US7257033B2 (en) 2005-03-17 2007-08-14 Impinj, Inc. Inverter non-volatile memory cell and array system
US7679957B2 (en) 2005-03-31 2010-03-16 Virage Logic Corporation Redundant non-volatile memory cell
US8122307B1 (en) 2006-08-15 2012-02-21 Synopsys, Inc. One time programmable memory test structures and methods
US7508694B2 (en) * 2006-09-27 2009-03-24 Novelics, Llc One-time-programmable memory
US7719896B1 (en) 2007-04-24 2010-05-18 Virage Logic Corporation Configurable single bit/dual bits memory
US7894261B1 (en) 2008-05-22 2011-02-22 Synopsys, Inc. PFET nonvolatile memory
US7869251B2 (en) * 2008-09-26 2011-01-11 Lsi Corporation SRAM based one-time-programmable memory
KR101071190B1 (ko) * 2009-11-27 2011-10-10 주식회사 하이닉스반도체 레벨 쉬프팅 회로 및 이를 이용한 비휘발성 반도체 메모리 장치
US8797820B2 (en) * 2010-06-08 2014-08-05 Chengdu Kiloway Electronics Inc. Soft breakdown mode, low voltage, low power antifuse-based non-volatile memory cell
US8611138B1 (en) * 2012-01-20 2013-12-17 Altera Corporation Circuits and methods for hardening volatile memory circuits through one time programming
US9508396B2 (en) * 2014-04-02 2016-11-29 Ememory Technology Inc. Array structure of single-ploy nonvolatile memory
CN105469825B (zh) * 2015-11-09 2019-11-19 中国人民解放军国防科学技术大学 一种面向标准cmos工艺非易失存储器的高压切换方法

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US5148738A (en) * 1988-06-10 1992-09-22 Sunkist Growers, Inc. Apparatus for chemical treating of fresh fruit and the like
US5334880A (en) 1991-04-30 1994-08-02 International Business Machines Corporation Low voltage programmable storage element
JP2859481B2 (ja) 1992-01-20 1999-02-17 シャープ株式会社 不揮発性メモリ装置
US5629890A (en) * 1994-09-14 1997-05-13 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
DE4440539C2 (de) 1994-11-12 1996-09-19 Itt Ind Gmbh Deutsche Programmierbarer Halbleiterspeicher
DE69531823T2 (de) 1995-07-28 2004-07-01 Stmicroelectronics S.R.L., Agrate Brianza Asymmetrische Verriegelungsschaltung und diese enthaltende Schmelzsicherungsschatung
US5689455A (en) 1995-08-31 1997-11-18 Micron Technology, Inc. Circuit for programming antifuse bits
US5748025A (en) 1996-03-29 1998-05-05 Intel Corporation Method and apparatus for providing high voltage with a low voltage CMOS integrated circuit
DE19617986B4 (de) * 1996-05-04 2004-02-26 Ing. Haaga Werkzeugbau Kg Kehrmaschine
US5886392A (en) 1996-08-08 1999-03-23 Micron Technology, Inc. One-time programmable element having controlled programmed state resistance
US5742555A (en) * 1996-08-20 1998-04-21 Micron Technology, Inc. Method of anti-fuse repair
JP2865078B2 (ja) * 1996-10-02 1999-03-08 日本電気株式会社 半導体記憶装置
US5812477A (en) 1996-10-03 1998-09-22 Micron Technology, Inc. Antifuse detection circuit
US5949712A (en) 1997-03-27 1999-09-07 Xilinx, Inc. Non-volatile memory array using gate breakdown structure
US6188265B1 (en) * 1997-12-12 2001-02-13 Scenix Semiconduction, Inc. High-voltage NMOS switch
KR100302588B1 (ko) * 1998-04-14 2001-09-22 김영환 리던던시퓨즈읽기회로
US6041008A (en) * 1998-05-13 2000-03-21 Micron Technology Inc. Method and apparatus for embedded read only memory in static random access memory
US6044012A (en) 1999-03-05 2000-03-28 Xilinx, Inc. Non-volatile memory array using gate breakdown structure in standard sub 0.35 micron CMOS process
JP2001176975A (ja) * 1999-12-17 2001-06-29 Mitsubishi Electric Corp 半導体装置及びその製造方法
US6266269B1 (en) 2000-06-07 2001-07-24 Xilinx, Inc. Three terminal non-volatile memory element
US6960819B2 (en) 2000-12-20 2005-11-01 Broadcom Corporation System and method for one-time programmed memory through direct-tunneling oxide breakdown
US6704236B2 (en) * 2002-01-03 2004-03-09 Broadcom Corporation Method and apparatus for verification of a gate oxide fuse element
US6624499B2 (en) * 2002-02-28 2003-09-23 Infineon Technologies Ag System for programming fuse structure by electromigration of silicide enhanced by creating temperature gradient
US6707696B1 (en) * 2003-05-15 2004-03-16 Broadcom Corporation Hacker-proof one time programmable memory

Also Published As

Publication number Publication date
US6901004B2 (en) 2005-05-31
US20040257859A1 (en) 2004-12-23
EP1327993B1 (de) 2006-05-17
US20030202398A1 (en) 2003-10-30
DE60305217T2 (de) 2007-03-01
US6693819B2 (en) 2004-02-17
US6744660B2 (en) 2004-06-01
EP1327993A1 (de) 2003-07-16
US20030128576A1 (en) 2003-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, 80639 M