DE60311408D1 - Elektrooptische Vorrichtung, Herstellungsverfahren derselben und elektronisches Gerät - Google Patents

Elektrooptische Vorrichtung, Herstellungsverfahren derselben und elektronisches Gerät

Info

Publication number
DE60311408D1
DE60311408D1 DE60311408T DE60311408T DE60311408D1 DE 60311408 D1 DE60311408 D1 DE 60311408D1 DE 60311408 T DE60311408 T DE 60311408T DE 60311408 T DE60311408 T DE 60311408T DE 60311408 D1 DE60311408 D1 DE 60311408D1
Authority
DE
Germany
Prior art keywords
electro
manufacturing
electronic device
optical device
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60311408T
Other languages
English (en)
Other versions
DE60311408T2 (de
Inventor
Hisaki Kurashina
Kenichi Takahara
Hidenori Kawata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE60311408D1 publication Critical patent/DE60311408D1/de
Publication of DE60311408T2 publication Critical patent/DE60311408T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136213Storage capacitors associated with the pixel electrode
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136209Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136227Through-hole connection of the pixel electrode to the active element through an insulation layer
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • H10K59/1315Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
DE60311408T 2002-11-26 2003-11-17 Elektrooptische Vorrichtung, Herstellungsverfahren derselben und elektronisches Gerät Expired - Lifetime DE60311408T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2002342493 2002-11-26
JP2002342493 2002-11-26
JP2003321779 2003-09-12
JP2003321779A JP3767590B2 (ja) 2002-11-26 2003-09-12 電気光学装置及びその製造方法並びに電子機器

Publications (2)

Publication Number Publication Date
DE60311408D1 true DE60311408D1 (de) 2007-03-15
DE60311408T2 DE60311408T2 (de) 2007-10-31

Family

ID=32510586

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60311408T Expired - Lifetime DE60311408T2 (de) 2002-11-26 2003-11-17 Elektrooptische Vorrichtung, Herstellungsverfahren derselben und elektronisches Gerät

Country Status (7)

Country Link
US (1) US7053410B2 (de)
EP (1) EP1437618B1 (de)
JP (1) JP3767590B2 (de)
KR (1) KR100564510B1 (de)
CN (1) CN1257428C (de)
DE (1) DE60311408T2 (de)
TW (1) TWI234126B (de)

Families Citing this family (28)

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Publication number Priority date Publication date Assignee Title
JP3925549B2 (ja) * 2002-11-26 2007-06-06 セイコーエプソン株式会社 電気光学装置及び電子機器
KR100669720B1 (ko) 2004-08-06 2007-01-16 삼성에스디아이 주식회사 평판 디스플레이 장치
JP2007025611A (ja) * 2005-06-17 2007-02-01 Seiko Epson Corp 電気光学装置及びその製造方法、並びに電子機器
KR100717813B1 (ko) * 2005-06-30 2007-05-11 주식회사 하이닉스반도체 나노믹스드 유전막을 갖는 캐패시터 및 그의 제조 방법
JP5011680B2 (ja) * 2005-08-30 2012-08-29 セイコーエプソン株式会社 電気光学装置、及びこれを備えた電子機器
JP4957023B2 (ja) * 2006-03-09 2012-06-20 セイコーエプソン株式会社 電気光学装置及び電子機器
JP5034434B2 (ja) * 2006-10-18 2012-09-26 ソニー株式会社 電気光学装置
KR100805018B1 (ko) * 2007-03-23 2008-02-20 주식회사 하이닉스반도체 반도체 소자의 제조 방법
JP5428142B2 (ja) * 2007-09-11 2014-02-26 カシオ計算機株式会社 表示パネルの製造方法
JP5223418B2 (ja) * 2008-04-01 2013-06-26 セイコーエプソン株式会社 電気光学装置及び電子機器
CN102016705B (zh) * 2008-05-28 2012-10-10 夏普株式会社 有源矩阵基板、有源矩阵基板的制造方法、液晶面板、液晶面板的制造方法、液晶显示装置、液晶显示单元以及电视接收机
US8593141B1 (en) 2009-11-24 2013-11-26 Hypres, Inc. Magnetic resonance system and method employing a digital squid
US8970217B1 (en) 2010-04-14 2015-03-03 Hypres, Inc. System and method for noise reduction in magnetic resonance imaging
JP5701201B2 (ja) * 2011-12-19 2015-04-15 株式会社Sen イオン注入方法及びイオン注入装置
DE102013216824A1 (de) * 2012-08-28 2014-03-06 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung
JP5278584B2 (ja) * 2012-09-28 2013-09-04 セイコーエプソン株式会社 電気光学装置及び電子機器
KR102037273B1 (ko) * 2012-12-28 2019-11-27 삼성디스플레이 주식회사 유기 발광 표시 장치
JP2015197582A (ja) * 2014-04-01 2015-11-09 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、及び電子機器
TW201539095A (zh) * 2014-04-01 2015-10-16 Seiko Epson Corp 光電裝置及電子機器
JP2015197584A (ja) * 2014-04-01 2015-11-09 セイコーエプソン株式会社 電気光学装置、電気光学装置の製造方法、及び電子機器
JP6303748B2 (ja) * 2014-04-14 2018-04-04 セイコーエプソン株式会社 電気光学装置、光学ユニット、及び電子機器
KR101640192B1 (ko) 2014-08-05 2016-07-18 삼성디스플레이 주식회사 디스플레이 장치
CN106340522B (zh) * 2016-10-21 2019-05-28 奕瑞影像科技(太仓)有限公司 一种薄膜晶体管面板结构及制作方法
CN109301080B (zh) * 2017-07-24 2024-03-05 固安翌光科技有限公司 一种有机电致发光器件
CN108254991B (zh) 2018-03-14 2021-08-20 京东方科技集团股份有限公司 电子纸显示装置及其制备方法和驱动方法
JP6813045B2 (ja) * 2019-03-14 2021-01-13 セイコーエプソン株式会社 電気光学装置および電子機器
CN110085648B (zh) * 2019-05-17 2021-03-16 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板、显示装置
KR20220162202A (ko) * 2021-05-31 2022-12-08 삼성디스플레이 주식회사 표시 장치

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JP2983102B2 (ja) 1991-12-26 1999-11-29 三菱電機株式会社 半導体装置,およびその製造方法
JPH05341315A (ja) * 1992-06-08 1993-12-24 Hitachi Ltd 薄膜トランジスタ基板、液晶表示パネルおよび液晶表示装置
JP3600393B2 (ja) * 1997-02-10 2004-12-15 株式会社東芝 半導体装置及びその製造方法
JPH10307305A (ja) 1997-03-07 1998-11-17 Toshiba Corp アレイ基板、液晶表示装置及びそれらの製造方法
JP3208658B2 (ja) * 1997-03-27 2001-09-17 株式会社アドバンスト・ディスプレイ 電気光学素子の製法
JP3784491B2 (ja) * 1997-03-28 2006-06-14 株式会社半導体エネルギー研究所 アクティブマトリクス型の表示装置
KR100519205B1 (ko) 1998-03-19 2005-10-06 세이코 엡슨 가부시키가이샤 액정장치, 투사형 표시장치 및 전자기기
JP3458382B2 (ja) * 1998-11-26 2003-10-20 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
TW478014B (en) * 1999-08-31 2002-03-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing thereof
JP3799943B2 (ja) * 2000-03-17 2006-07-19 セイコーエプソン株式会社 電気光学装置およびプロジェクタ
KR100481593B1 (ko) * 2000-04-21 2005-04-08 세이코 엡슨 가부시키가이샤 전기 광학 장치
JP3731447B2 (ja) * 2000-06-15 2006-01-05 セイコーエプソン株式会社 電気光学装置及びその製造方法
JP2002131778A (ja) * 2000-10-23 2002-05-09 Seiko Epson Corp 電気光学装置用基板およびこれを備えた電気光学装置並びに電子機器
JP3849434B2 (ja) * 2001-02-14 2006-11-22 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
JP2002353245A (ja) * 2001-03-23 2002-12-06 Seiko Epson Corp 電気光学基板装置及びその製造方法、電気光学装置、電子機器、並びに基板装置の製造方法

Also Published As

Publication number Publication date
DE60311408T2 (de) 2007-10-31
JP3767590B2 (ja) 2006-04-19
CN1257428C (zh) 2006-05-24
TWI234126B (en) 2005-06-11
TW200414097A (en) 2004-08-01
US7053410B2 (en) 2006-05-30
CN1503041A (zh) 2004-06-09
KR100564510B1 (ko) 2006-03-29
KR20040047647A (ko) 2004-06-05
JP2004191931A (ja) 2004-07-08
US20040141223A1 (en) 2004-07-22
EP1437618B1 (de) 2007-01-24
EP1437618A3 (de) 2004-09-22
EP1437618A2 (de) 2004-07-14

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