DE60329978D1 - Verfahren zur substratbehandlung und trockungs-sammelrohr - Google Patents
Verfahren zur substratbehandlung und trockungs-sammelrohrInfo
- Publication number
- DE60329978D1 DE60329978D1 DE60329978T DE60329978T DE60329978D1 DE 60329978 D1 DE60329978 D1 DE 60329978D1 DE 60329978 T DE60329978 T DE 60329978T DE 60329978 T DE60329978 T DE 60329978T DE 60329978 D1 DE60329978 D1 DE 60329978D1
- Authority
- DE
- Germany
- Prior art keywords
- manifold
- substrate
- process window
- collar
- drying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/34—Pretreatment of metallic surfaces to be electroplated
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/261,839 US7234477B2 (en) | 2000-06-30 | 2002-09-30 | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US10/330,843 US7198055B2 (en) | 2002-09-30 | 2002-12-24 | Meniscus, vacuum, IPA vapor, drying manifold |
US10/330,897 US7240679B2 (en) | 2002-09-30 | 2002-12-24 | System for substrate processing with meniscus, vacuum, IPA vapor, drying manifold |
US10/404,270 US7069937B2 (en) | 2002-09-30 | 2003-03-31 | Vertical proximity processor |
PCT/US2003/031051 WO2004030051A2 (en) | 2002-09-30 | 2003-09-30 | System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60329978D1 true DE60329978D1 (de) | 2009-12-24 |
Family
ID=32030081
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60329978T Expired - Lifetime DE60329978D1 (de) | 2002-09-30 | 2003-09-30 | Verfahren zur substratbehandlung und trockungs-sammelrohr |
Country Status (8)
Country | Link |
---|---|
US (9) | US7198055B2 (de) |
EP (2) | EP1801851B1 (de) |
KR (4) | KR101056969B1 (de) |
CN (1) | CN101369522B (de) |
AT (2) | ATE556431T1 (de) |
DE (1) | DE60329978D1 (de) |
IL (2) | IL161550A (de) |
SG (1) | SG144740A1 (de) |
Families Citing this family (100)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US7584761B1 (en) * | 2000-06-30 | 2009-09-08 | Lam Research Corporation | Wafer edge surface treatment with liquid meniscus |
US20040031167A1 (en) | 2002-06-13 | 2004-02-19 | Stein Nathan D. | Single wafer method and apparatus for drying semiconductor substrates using an inert gas air-knife |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US7997288B2 (en) * | 2002-09-30 | 2011-08-16 | Lam Research Corporation | Single phase proximity head having a controlled meniscus for treating a substrate |
US8236382B2 (en) * | 2002-09-30 | 2012-08-07 | Lam Research Corporation | Proximity substrate preparation sequence, and method, apparatus, and system for implementing the same |
US7632376B1 (en) | 2002-09-30 | 2009-12-15 | Lam Research Corporation | Method and apparatus for atomic layer deposition (ALD) in a proximity system |
US7614411B2 (en) | 2002-09-30 | 2009-11-10 | Lam Research Corporation | Controls of ambient environment during wafer drying using proximity head |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7389783B2 (en) * | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
US7329321B2 (en) * | 2002-09-30 | 2008-02-12 | Lam Research Corporation | Enhanced wafer cleaning method |
US7153400B2 (en) * | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
US7293571B2 (en) | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
US7810513B1 (en) * | 2002-09-30 | 2010-10-12 | Lam Research Corporation | Substrate preparation using megasonic coupling fluid meniscus and methods, apparatus, and systems for implementing the same |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US7045018B2 (en) * | 2002-09-30 | 2006-05-16 | Lam Research Corporation | Substrate brush scrubbing and proximity cleaning-drying sequence using compatible chemistries, and method, apparatus, and system for implementing the same |
US7520285B2 (en) | 2002-09-30 | 2009-04-21 | Lam Research Corporation | Apparatus and method for processing a substrate |
US7513262B2 (en) | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US20040226654A1 (en) * | 2002-12-17 | 2004-11-18 | Akihisa Hongo | Substrate processing apparatus and substrate processing method |
EP3352015A1 (de) | 2003-04-10 | 2018-07-25 | Nikon Corporation | Umweltsystem mit einer transportregion für eine immersionslithographievorrichtung |
KR101319152B1 (ko) | 2003-04-10 | 2013-10-17 | 가부시키가이샤 니콘 | 액침 리소그래피 장치용 진공 배출을 포함하는 환경 시스템 |
US7238085B2 (en) * | 2003-06-06 | 2007-07-03 | P.C.T. Systems, Inc. | Method and apparatus to process substrates with megasonic energy |
US7675000B2 (en) * | 2003-06-24 | 2010-03-09 | Lam Research Corporation | System method and apparatus for dry-in, dry-out, low defect laser dicing using proximity technology |
US6809794B1 (en) * | 2003-06-27 | 2004-10-26 | Asml Holding N.V. | Immersion photolithography system and method using inverted wafer-projection optics interface |
US7696141B2 (en) * | 2003-06-27 | 2010-04-13 | Lam Research Corporation | Cleaning compound and method and system for using the cleaning compound |
CN1894442B (zh) | 2003-10-22 | 2012-01-04 | 内克斯系统公司 | 用于对工件进行流体处理的方法和设备 |
JP4295712B2 (ja) | 2003-11-14 | 2009-07-15 | エーエスエムエル ネザーランズ ビー.ブイ. | リソグラフィ装置及び装置製造方法 |
US7353560B2 (en) * | 2003-12-18 | 2008-04-08 | Lam Research Corporation | Proximity brush unit apparatus and method |
US8522799B2 (en) * | 2005-12-30 | 2013-09-03 | Lam Research Corporation | Apparatus and system for cleaning a substrate |
KR101250155B1 (ko) | 2004-03-25 | 2013-04-05 | 가부시키가이샤 니콘 | 노광 장치 및 디바이스 제조 방법 |
US8062471B2 (en) * | 2004-03-31 | 2011-11-22 | Lam Research Corporation | Proximity head heating method and apparatus |
US7645364B2 (en) | 2004-06-30 | 2010-01-12 | Lam Research Corporation | Apparatus and method for plating semiconductor wafers |
TWI267405B (en) * | 2004-07-20 | 2006-12-01 | Sez Ag | Fluid discharging device |
US7718009B2 (en) * | 2004-08-30 | 2010-05-18 | Applied Materials, Inc. | Cleaning submicron structures on a semiconductor wafer surface |
JPWO2006038472A1 (ja) * | 2004-10-06 | 2008-05-15 | 株式会社荏原製作所 | 基板処理装置及び基板処理方法 |
US7362412B2 (en) * | 2004-11-18 | 2008-04-22 | International Business Machines Corporation | Method and apparatus for cleaning a semiconductor substrate in an immersion lithography system |
US20070093067A1 (en) * | 2005-10-24 | 2007-04-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wafer edge cleaning process |
SG154438A1 (en) * | 2005-12-30 | 2009-08-28 | Lam Res Corp | Cleaning compound and method and system for using the cleaning compound |
US9049520B2 (en) | 2006-01-20 | 2015-06-02 | Akrion Systems Llc | Composite transducer apparatus and system for processing a substrate and method of constructing the same |
US7784478B2 (en) * | 2006-01-20 | 2010-08-31 | Akrion Systems Llc | Acoustic energy system, method and apparatus for processing flat articles |
US9987666B2 (en) | 2006-01-20 | 2018-06-05 | Naura Akrion Inc. | Composite transducer apparatus and system for processing a substrate and method of constructing the same |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
US7928366B2 (en) * | 2006-10-06 | 2011-04-19 | Lam Research Corporation | Methods of and apparatus for accessing a process chamber using a dual zone gas injector with improved optical access |
US8291921B2 (en) * | 2008-08-19 | 2012-10-23 | Lam Research Corporation | Removing bubbles from a fluid flowing down through a plenum |
US8813764B2 (en) * | 2009-05-29 | 2014-08-26 | Lam Research Corporation | Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer |
US7946303B2 (en) * | 2006-09-29 | 2011-05-24 | Lam Research Corporation | Carrier for reducing entrance and/or exit marks left by a substrate-processing meniscus |
WO2008070295A2 (en) * | 2006-10-17 | 2008-06-12 | Akrion Technologies, Inc. | System and method for the sonic-assisted cleaning of substrates utilizing a sonic-treated liquid |
JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
US8327861B2 (en) * | 2006-12-19 | 2012-12-11 | Lam Research Corporation | Megasonic precision cleaning of semiconductor process equipment components and parts |
US20080148595A1 (en) * | 2006-12-20 | 2008-06-26 | Lam Research Corporation | Method and apparatus for drying substrates using a surface tensions reducing gas |
US8146902B2 (en) * | 2006-12-21 | 2012-04-03 | Lam Research Corporation | Hybrid composite wafer carrier for wet clean equipment |
US20080149147A1 (en) * | 2006-12-22 | 2008-06-26 | Lam Research | Proximity head with configurable delivery |
US7975708B2 (en) * | 2007-03-30 | 2011-07-12 | Lam Research Corporation | Proximity head with angled vacuum conduit system, apparatus and method |
US8464736B1 (en) | 2007-03-30 | 2013-06-18 | Lam Research Corporation | Reclaim chemistry |
US7866330B2 (en) * | 2007-05-04 | 2011-01-11 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US7841352B2 (en) | 2007-05-04 | 2010-11-30 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8947629B2 (en) * | 2007-05-04 | 2015-02-03 | Asml Netherlands B.V. | Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method |
US8141566B2 (en) * | 2007-06-19 | 2012-03-27 | Lam Research Corporation | System, method and apparatus for maintaining separation of liquids in a controlled meniscus |
US8323460B2 (en) * | 2007-06-20 | 2012-12-04 | Lam Research Corporation | Methods and systems for three-dimensional integrated circuit through hole via gapfill and overburden removal |
US8673769B2 (en) * | 2007-06-20 | 2014-03-18 | Lam Research Corporation | Methods and apparatuses for three dimensional integrated circuits |
JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
JP2009141081A (ja) * | 2007-12-05 | 2009-06-25 | Sumco Corp | 半導体ウェーハ表面検査装置 |
US8084406B2 (en) | 2007-12-14 | 2011-12-27 | Lam Research Corporation | Apparatus for particle removal by single-phase and two-phase media |
SG188086A1 (en) * | 2008-02-08 | 2013-03-28 | Lam Res Corp | Apparatus for substantially uniform fluid flow rates relative to a proximity head in processing of a wafer surface by a meniscus |
US7967916B2 (en) * | 2008-03-14 | 2011-06-28 | Lam Research Corporation | Method of preventing pattern collapse during rinsing and drying |
US8585825B2 (en) * | 2008-10-30 | 2013-11-19 | Lam Research Corporation | Acoustic assisted single wafer wet clean for semiconductor wafer process |
US8739805B2 (en) * | 2008-11-26 | 2014-06-03 | Lam Research Corporation | Confinement of foam delivered by a proximity head |
US20100224215A1 (en) * | 2009-03-06 | 2010-09-09 | Imec | Method for Reducing the Damage Induced by a Physical Force Assisted Cleaning |
FR2944624A1 (fr) * | 2009-04-16 | 2010-10-22 | Miyowa | Procede pour autoriser une connexion entre un terminal informatique et un serveur source |
US7849554B2 (en) * | 2009-04-28 | 2010-12-14 | Lam Research Corporation | Apparatus and system for cleaning substrate |
US8317934B2 (en) * | 2009-05-13 | 2012-11-27 | Lam Research Corporation | Multi-stage substrate cleaning method and apparatus |
US8845812B2 (en) * | 2009-06-12 | 2014-09-30 | Micron Technology, Inc. | Method for contamination removal using magnetic particles |
JP5140641B2 (ja) * | 2009-06-29 | 2013-02-06 | 株式会社荏原製作所 | 基板処理方法及び基板処理装置 |
EP2315235B1 (de) * | 2009-10-21 | 2019-04-24 | IMEC vzw | Verfahren und Vorrichtung zur Reinigung eines Halbleitersubstrats |
US9111729B2 (en) * | 2009-12-03 | 2015-08-18 | Lam Research Corporation | Small plasma chamber systems and methods |
US20110139183A1 (en) * | 2009-12-11 | 2011-06-16 | Katrina Mikhaylichenko | System and method of preventing pattern collapse using low surface tension fluid |
NL2005717A (en) * | 2009-12-18 | 2011-06-21 | Asml Netherlands Bv | A lithographic apparatus and a device manufacturing method. |
US9044794B2 (en) * | 2009-12-31 | 2015-06-02 | Lam Research Ag | Ultrasonic cleaning fluid, method and apparatus |
US9190289B2 (en) | 2010-02-26 | 2015-11-17 | Lam Research Corporation | System, method and apparatus for plasma etch having independent control of ion generation and dissociation of process gas |
ITMI20100407A1 (it) * | 2010-03-12 | 2011-09-13 | Rise Technology S R L | Cella foto-voltaica con regioni di semiconduttore poroso per ancorare terminali di contatto |
US9155181B2 (en) | 2010-08-06 | 2015-10-06 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US9967965B2 (en) | 2010-08-06 | 2018-05-08 | Lam Research Corporation | Distributed, concentric multi-zone plasma source systems, methods and apparatus |
US9449793B2 (en) | 2010-08-06 | 2016-09-20 | Lam Research Corporation | Systems, methods and apparatus for choked flow element extraction |
US8999104B2 (en) | 2010-08-06 | 2015-04-07 | Lam Research Corporation | Systems, methods and apparatus for separate plasma source control |
US9662686B2 (en) * | 2010-09-24 | 2017-05-30 | Lam Research Ag | Ultrasonic cleaning method and apparatus |
US9931017B2 (en) * | 2010-11-16 | 2018-04-03 | Martin A. Alpert | Washing apparatus and method with spiral air flow for drying |
US20120260517A1 (en) * | 2011-04-18 | 2012-10-18 | Lam Research Corporation | Apparatus and Method for Reducing Substrate Pattern Collapse During Drying Operations |
US8926762B2 (en) | 2011-09-06 | 2015-01-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and methods for movable megasonic wafer probe |
US8968485B2 (en) | 2011-09-30 | 2015-03-03 | Lam Research Corporation | Apparatus and methods for processing a substrate |
US9418904B2 (en) | 2011-11-14 | 2016-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Localized CMP to improve wafer planarization |
US9177762B2 (en) | 2011-11-16 | 2015-11-03 | Lam Research Corporation | System, method and apparatus of a wedge-shaped parallel plate plasma reactor for substrate processing |
US10283325B2 (en) | 2012-10-10 | 2019-05-07 | Lam Research Corporation | Distributed multi-zone plasma source systems, methods and apparatus |
US10065288B2 (en) | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
US8869422B2 (en) * | 2012-04-27 | 2014-10-28 | Applied Materials, Inc. | Methods and apparatus for marangoni substrate drying using a vapor knife manifold |
US9808891B2 (en) * | 2014-01-16 | 2017-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Tool and method of reflow |
US9666461B1 (en) * | 2016-02-05 | 2017-05-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor process and semiconductor processing device using the same |
JP6916003B2 (ja) * | 2017-02-24 | 2021-08-11 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
CN112236274A (zh) * | 2018-06-01 | 2021-01-15 | 无绳发展有限公司 | 用于物体的非接触式处理的设备 |
EP4056736A1 (de) * | 2021-03-09 | 2022-09-14 | Semsysco GmbH | Verteilungssystem für eine prozessflüssigkeit zur chemischen und/oder elektrolytischen oberflächenbehandlung eines substrats |
Family Cites Families (110)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3953265A (en) * | 1975-04-28 | 1976-04-27 | International Business Machines Corporation | Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers |
US4086870A (en) * | 1977-06-30 | 1978-05-02 | International Business Machines Corporation | Novel resist spinning head |
US4367123A (en) | 1980-07-09 | 1983-01-04 | Olin Corporation | Precision spot plating process and apparatus |
JPS5852034B2 (ja) | 1981-08-26 | 1983-11-19 | 株式会社ソニツクス | 部分メツキ方法及びその装置 |
US4444492A (en) * | 1982-05-15 | 1984-04-24 | General Signal Corporation | Apparatus for projecting a series of images onto dies of a semiconductor wafer |
US4838289A (en) * | 1982-08-03 | 1989-06-13 | Texas Instruments Incorporated | Apparatus and method for edge cleaning |
JPS62150828A (ja) | 1985-12-25 | 1987-07-04 | Mitsubishi Electric Corp | ウエハ乾燥装置 |
JPH0712035B2 (ja) | 1989-04-20 | 1995-02-08 | 三菱電機株式会社 | 噴流式液処理装置 |
JPH02309638A (ja) | 1989-05-24 | 1990-12-25 | Fujitsu Ltd | ウエハーエッチング装置 |
JPH0628223Y2 (ja) * | 1989-06-14 | 1994-08-03 | 大日本スクリーン製造株式会社 | 回転塗布装置 |
US5271774A (en) * | 1990-03-01 | 1993-12-21 | U.S. Philips Corporation | Method for removing in a centrifuge a liquid from a surface of a substrate |
US5102494A (en) * | 1990-07-13 | 1992-04-07 | Mobil Solar Energy Corporation | Wet-tip die for EFG cyrstal growth apparatus |
US5294257A (en) * | 1991-10-28 | 1994-03-15 | International Business Machines Corporation | Edge masking spin tool |
US5343234A (en) * | 1991-11-15 | 1994-08-30 | Kuehnle Manfred R | Digital color proofing system and method for offset and gravure printing |
US5749469A (en) * | 1992-05-15 | 1998-05-12 | Fluoroware, Inc. | Wafer carrier |
JP2896268B2 (ja) * | 1992-05-22 | 1999-05-31 | 三菱電機株式会社 | 半導体基板の表面処理装置及びその制御方法 |
JP2877216B2 (ja) * | 1992-10-02 | 1999-03-31 | 東京エレクトロン株式会社 | 洗浄装置 |
US5472502A (en) * | 1993-08-30 | 1995-12-05 | Semiconductor Systems, Inc. | Apparatus and method for spin coating wafers and the like |
US5807522A (en) | 1994-06-17 | 1998-09-15 | The Board Of Trustees Of The Leland Stanford Junior University | Methods for fabricating microarrays of biological samples |
JP3563074B2 (ja) * | 1994-06-30 | 2004-09-08 | ザ プロクター アンド ギャンブル カンパニー | 表面エネルギ勾配を備えた流体移送ウェブ |
US5705223A (en) * | 1994-07-26 | 1998-01-06 | International Business Machine Corp. | Method and apparatus for coating a semiconductor wafer |
JP3247270B2 (ja) * | 1994-08-25 | 2002-01-15 | 東京エレクトロン株式会社 | 処理装置及びドライクリーニング方法 |
US5558111A (en) * | 1995-02-02 | 1996-09-24 | International Business Machines Corporation | Apparatus and method for carrier backing film reconditioning |
US5601655A (en) * | 1995-02-14 | 1997-02-11 | Bok; Hendrik F. | Method of cleaning substrates |
JPH08277486A (ja) | 1995-04-04 | 1996-10-22 | Dainippon Printing Co Ltd | リードフレームのめっき装置 |
TW386235B (en) * | 1995-05-23 | 2000-04-01 | Tokyo Electron Ltd | Method for spin rinsing |
US5660642A (en) * | 1995-05-26 | 1997-08-26 | The Regents Of The University Of California | Moving zone Marangoni drying of wet objects using naturally evaporated solvent vapor |
US5975098A (en) * | 1995-12-21 | 1999-11-02 | Dainippon Screen Mfg. Co., Ltd. | Apparatus for and method of cleaning substrate |
DE19622015A1 (de) * | 1996-05-31 | 1997-12-04 | Siemens Ag | Verfahren zum Ätzen von Zerstörungszonen an einem Halbleitersubstratrand sowie Ätzanlage |
US6221171B1 (en) * | 1996-06-04 | 2001-04-24 | Ebara Corporation | Method and apparatus for conveying a workpiece |
US5985031A (en) * | 1996-06-21 | 1999-11-16 | Micron Technology, Inc. | Spin coating spindle and chuck assembly |
US6039059A (en) * | 1996-09-30 | 2000-03-21 | Verteq, Inc. | Wafer cleaning system |
TW357406B (en) * | 1996-10-07 | 1999-05-01 | Tokyo Electron Ltd | Method and apparatus for cleaning and drying a substrate |
DE19646006C2 (de) * | 1996-11-07 | 2000-04-06 | Hideyuki Kobayashi | Düse zur Schnellgalvanisierung mit einer Galvanisierungslösungsabstrahl- und -ansaugfunktion |
JPH1133506A (ja) * | 1997-07-24 | 1999-02-09 | Tadahiro Omi | 流体処理装置及び洗浄処理システム |
JPH10163138A (ja) * | 1996-11-29 | 1998-06-19 | Fujitsu Ltd | 半導体装置の製造方法および研磨装置 |
JPH10232498A (ja) * | 1997-02-19 | 1998-09-02 | Nec Kyushu Ltd | 現像装置 |
JP2983495B2 (ja) * | 1997-05-20 | 1999-11-29 | 株式会社カイジョー | 基板の乾燥方法 |
US6448040B1 (en) * | 1997-06-20 | 2002-09-10 | MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. | Inhibitor of cellular proliferation |
JPH1131672A (ja) | 1997-07-10 | 1999-02-02 | Hitachi Ltd | 基板処理方法および基板処理装置 |
DE19832038A1 (de) * | 1997-07-17 | 1999-01-28 | Tokyo Electron Ltd | Verfahren und Einrichtung zum Reinigen und Trocknen |
US6103636A (en) * | 1997-08-20 | 2000-08-15 | Micron Technology, Inc. | Method and apparatus for selective removal of material from wafer alignment marks |
US6398975B1 (en) * | 1997-09-24 | 2002-06-04 | Interuniversitair Microelektronica Centrum (Imec) | Method and apparatus for localized liquid treatment of the surface of a substrate |
JP4616948B2 (ja) | 1997-09-24 | 2011-01-19 | アイメック | 回転基材の表面から液体を除去する方法および装置 |
EP0970511B1 (de) | 1997-09-24 | 2005-01-12 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zum entfernen einer flüssigkeit von einer oberfläche einer substrat |
EP0905746A1 (de) | 1997-09-24 | 1999-03-31 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zum Entfernen einer Flüssigkeit von einer Oberfläche einer umlaufenden Substrat |
EP0905748B1 (de) * | 1997-09-24 | 2006-03-15 | Interuniversitair Micro-Elektronica Centrum Vzw | Verfahren zum Entfernen von Teilchen und Flüssigkeit von der Oberfläche eines Substrats |
US6491764B2 (en) * | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
US5933902A (en) * | 1997-11-18 | 1999-08-10 | Frey; Bernhard M. | Wafer cleaning system |
US6383289B2 (en) * | 1997-12-16 | 2002-05-07 | The University Of North Carolina At Chapel Hill | Apparatus for liquid carbon dioxide systems |
AU2233399A (en) | 1998-02-12 | 1999-08-30 | Acm Research, Inc. | Plating apparatus and method |
WO1999049504A1 (fr) | 1998-03-26 | 1999-09-30 | Nikon Corporation | Procede et systeme d'exposition par projection |
US6108932A (en) * | 1998-05-05 | 2000-08-29 | Steag Microtech Gmbh | Method and apparatus for thermocapillary drying |
JPH11350169A (ja) | 1998-06-10 | 1999-12-21 | Chemitoronics Co | ウエットエッチング装置およびウエットエッチングの方法 |
US6132586A (en) * | 1998-06-11 | 2000-10-17 | Integrated Process Equipment Corporation | Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly |
JP2000015159A (ja) * | 1998-07-02 | 2000-01-18 | Dainippon Screen Mfg Co Ltd | 処理液供給装置 |
US6460552B1 (en) * | 1998-10-05 | 2002-10-08 | Lorimer D'arcy H. | Method and apparatus for cleaning flat workpieces |
US6689323B2 (en) * | 1998-10-30 | 2004-02-10 | Agilent Technologies | Method and apparatus for liquid transfer |
US6092937A (en) * | 1999-01-08 | 2000-07-25 | Fastar, Ltd. | Linear developer |
US6328814B1 (en) * | 1999-03-26 | 2001-12-11 | Applied Materials, Inc. | Apparatus for cleaning and drying substrates |
JP3653198B2 (ja) * | 1999-07-16 | 2005-05-25 | アルプス電気株式会社 | 乾燥用ノズルおよびこれを用いた乾燥装置ならびに洗浄装置 |
US20020121290A1 (en) * | 1999-08-25 | 2002-09-05 | Applied Materials, Inc. | Method and apparatus for cleaning/drying hydrophobic wafers |
US6222305B1 (en) * | 1999-08-27 | 2001-04-24 | Product Systems Incorporated | Chemically inert megasonic transducer system |
JP3635217B2 (ja) * | 1999-10-05 | 2005-04-06 | 東京エレクトロン株式会社 | 液処理装置及びその方法 |
WO2001027357A1 (en) * | 1999-10-12 | 2001-04-19 | Semitool, Inc. | Method and apparatus for executing plural processes on a microelectronic workpiece at a single processing station |
US6341998B1 (en) * | 1999-11-04 | 2002-01-29 | Vlsi Technology, Inc. | Integrated circuit (IC) plating deposition system and method |
US6214513B1 (en) * | 1999-11-24 | 2001-04-10 | Xerox Corporation | Slot coating under an electric field |
US6433541B1 (en) | 1999-12-23 | 2002-08-13 | Kla-Tencor Corporation | In-situ metalization monitoring using eddy current measurements during the process for removing the film |
US20030091754A1 (en) * | 2000-02-11 | 2003-05-15 | Thami Chihani | Method for treating cellulosic fibres |
US6474786B2 (en) * | 2000-02-24 | 2002-11-05 | The Board Of Trustees Of The Leland Stanford Junior University | Micromachined two-dimensional array droplet ejectors |
US6495005B1 (en) * | 2000-05-01 | 2002-12-17 | International Business Machines Corporation | Electroplating apparatus |
AU2001261625B2 (en) * | 2000-05-16 | 2006-04-06 | Regents Of The University Of Minnesota | High mass throughput particle generation using multiple nozzle spraying |
EP1295314A2 (de) | 2000-06-26 | 2003-03-26 | Applied Materials, Inc. | Verfahren und vorrichtung zur reinigung von halbleiterwafern |
US7234477B2 (en) * | 2000-06-30 | 2007-06-26 | Lam Research Corporation | Method and apparatus for drying semiconductor wafer surfaces using a plurality of inlets and outlets held in close proximity to the wafer surfaces |
US6488040B1 (en) * | 2000-06-30 | 2002-12-03 | Lam Research Corporation | Capillary proximity heads for single wafer cleaning and drying |
US7000622B2 (en) * | 2002-09-30 | 2006-02-21 | Lam Research Corporation | Methods and systems for processing a bevel edge of a substrate using a dynamic liquid meniscus |
US6530823B1 (en) * | 2000-08-10 | 2003-03-11 | Nanoclean Technologies Inc | Methods for cleaning surfaces substantially free of contaminants |
JP2002075947A (ja) * | 2000-08-30 | 2002-03-15 | Alps Electric Co Ltd | ウェット処理装置 |
US6555017B1 (en) * | 2000-10-13 | 2003-04-29 | The Regents Of The University Of Caliofornia | Surface contouring by controlled application of processing fluid using Marangoni effect |
US6550988B2 (en) * | 2000-10-30 | 2003-04-22 | Dainippon Screen Mfg., Co., Ltd. | Substrate processing apparatus |
US6531206B2 (en) | 2001-02-07 | 2003-03-11 | 3M Innovative Properties Company | Microstructured surface film assembly for liquid acquisition and transport |
US6754980B2 (en) | 2001-06-12 | 2004-06-29 | Goldfinger Technologies, Llc | Megasonic cleaner and dryer |
TW554069B (en) | 2001-08-10 | 2003-09-21 | Ebara Corp | Plating device and method |
JP2003115474A (ja) * | 2001-10-03 | 2003-04-18 | Ebara Corp | 基板処理装置及び方法 |
JP4003441B2 (ja) | 2001-11-08 | 2007-11-07 | セイコーエプソン株式会社 | 表面処理装置および表面処理方法 |
US6799584B2 (en) | 2001-11-09 | 2004-10-05 | Applied Materials, Inc. | Condensation-based enhancement of particle removal by suction |
US20040083976A1 (en) * | 2002-09-25 | 2004-05-06 | Silterra Malaysia Sdn. Bhd. | Modified deposition ring to eliminate backside and wafer edge coating |
US7069937B2 (en) * | 2002-09-30 | 2006-07-04 | Lam Research Corporation | Vertical proximity processor |
US7367345B1 (en) * | 2002-09-30 | 2008-05-06 | Lam Research Corporation | Apparatus and method for providing a confined liquid for immersion lithography |
US6954993B1 (en) * | 2002-09-30 | 2005-10-18 | Lam Research Corporation | Concentric proximity processing head |
US7153400B2 (en) * | 2002-09-30 | 2006-12-26 | Lam Research Corporation | Apparatus and method for depositing and planarizing thin films of semiconductor wafers |
US7093375B2 (en) * | 2002-09-30 | 2006-08-22 | Lam Research Corporation | Apparatus and method for utilizing a meniscus in substrate processing |
US7293571B2 (en) * | 2002-09-30 | 2007-11-13 | Lam Research Corporation | Substrate proximity processing housing and insert for generating a fluid meniscus |
US6988326B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Phobic barrier meniscus separation and containment |
US7198055B2 (en) * | 2002-09-30 | 2007-04-03 | Lam Research Corporation | Meniscus, vacuum, IPA vapor, drying manifold |
US7252097B2 (en) * | 2002-09-30 | 2007-08-07 | Lam Research Corporation | System and method for integrating in-situ metrology within a wafer process |
US7614411B2 (en) * | 2002-09-30 | 2009-11-10 | Lam Research Corporation | Controls of ambient environment during wafer drying using proximity head |
US7513262B2 (en) * | 2002-09-30 | 2009-04-07 | Lam Research Corporation | Substrate meniscus interface and methods for operation |
US7389783B2 (en) * | 2002-09-30 | 2008-06-24 | Lam Research Corporation | Proximity meniscus manifold |
CN100350552C (zh) | 2002-09-30 | 2007-11-21 | 拉姆研究公司 | 使用弯液面、负压、ipa蒸汽、干燥歧管进行基板处理的系统 |
US7383843B2 (en) * | 2002-09-30 | 2008-06-10 | Lam Research Corporation | Method and apparatus for processing wafer surfaces using thin, high velocity fluid layer |
US6988327B2 (en) * | 2002-09-30 | 2006-01-24 | Lam Research Corporation | Methods and systems for processing a substrate using a dynamic liquid meniscus |
SG121822A1 (en) * | 2002-11-12 | 2006-05-26 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method |
DE60335595D1 (de) * | 2002-11-12 | 2011-02-17 | Asml Netherlands Bv | Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung |
CN101713932B (zh) * | 2002-11-12 | 2012-09-26 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
EP1489461A1 (de) | 2003-06-11 | 2004-12-22 | ASML Netherlands B.V. | Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung |
US6867844B2 (en) | 2003-06-19 | 2005-03-15 | Asml Holding N.V. | Immersion photolithography system and method using microchannel nozzles |
US7713841B2 (en) * | 2003-09-19 | 2010-05-11 | Micron Technology, Inc. | Methods for thinning semiconductor substrates that employ support structures formed on the substrates |
US7353560B2 (en) * | 2003-12-18 | 2008-04-08 | Lam Research Corporation | Proximity brush unit apparatus and method |
US7003899B1 (en) * | 2004-09-30 | 2006-02-28 | Lam Research Corporation | System and method for modulating flow through multiple ports in a proximity head |
-
2002
- 2002-12-24 US US10/330,843 patent/US7198055B2/en not_active Expired - Fee Related
- 2002-12-24 US US10/330,897 patent/US7240679B2/en not_active Expired - Fee Related
-
2003
- 2003-06-30 US US10/611,140 patent/US7264007B2/en not_active Expired - Fee Related
- 2003-09-29 SG SG200602300-6A patent/SG144740A1/en unknown
- 2003-09-30 DE DE60329978T patent/DE60329978D1/de not_active Expired - Lifetime
- 2003-09-30 KR KR1020107024492A patent/KR101056969B1/ko not_active IP Right Cessation
- 2003-09-30 AT AT07007143T patent/ATE556431T1/de active
- 2003-09-30 KR KR1020107024494A patent/KR101118491B1/ko not_active IP Right Cessation
- 2003-09-30 EP EP20070007143 patent/EP1801851B1/de not_active Expired - Lifetime
- 2003-09-30 KR KR1020107013940A patent/KR101060542B1/ko not_active IP Right Cessation
- 2003-09-30 EP EP20090168725 patent/EP2117033B1/de not_active Expired - Lifetime
- 2003-09-30 AT AT03798814T patent/ATE448563T1/de not_active IP Right Cessation
- 2003-09-30 CN CN200810160905XA patent/CN101369522B/zh not_active Expired - Fee Related
- 2003-09-30 KR KR1020107024493A patent/KR101056970B1/ko not_active IP Right Cessation
-
2004
- 2004-04-21 IL IL16155004A patent/IL161550A/en not_active IP Right Cessation
-
2006
- 2006-10-03 US US11/542,700 patent/US7383844B2/en not_active Expired - Fee Related
-
2007
- 2007-01-03 US US11/619,599 patent/US7350316B2/en not_active Expired - Fee Related
- 2007-05-31 US US11/809,618 patent/US7722724B2/en not_active Expired - Fee Related
-
2008
- 2008-03-26 IL IL190454A patent/IL190454A/en not_active IP Right Cessation
-
2009
- 2009-02-17 US US12/372,683 patent/US7731802B2/en not_active Expired - Fee Related
- 2009-09-08 US US12/555,217 patent/US20090320884A1/en not_active Abandoned
-
2014
- 2014-05-28 US US14/289,624 patent/US20140332037A1/en not_active Abandoned
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60329978D1 (de) | Verfahren zur substratbehandlung und trockungs-sammelrohr | |
DE60230653D1 (de) | Verfahren und vorrichtung zur herstellung eines mehrkernigen geformten artikels | |
DE60333559D1 (de) | Substrat zum züchten von galliumnitrid, verfahren zur herstellung des substrats zum züchten von galliumnitrid und verfahren zur herstellung eines galliumnitridsubstrats | |
ATE431963T1 (de) | Vorrichtung und verfahren zur oberflächenbehandlung von substraten | |
DE50000852D1 (de) | Verfahren zur Herstellung von Aminen | |
DE60042993D1 (de) | Verfahren zum thermischen Behandeln eines Substrates | |
DE502005011307D1 (de) | Vorrichtung und sprühkopf zur zerstäubung einer vorzugsweisen kosmetischen flüssigkeit mittels einer drosseleinrichtung, sowie verfahren zum herstellen einer derartigen vorrichtung | |
DE502005008270D1 (de) | Behandlungsvorrichtung und Verfahren zur reinigenden und/oder trocknenden Behandlung von Werkstücken | |
ATE488478T1 (de) | Verfahren zur herstellung eines beschichteten glasartikels und dabei verwendetes zwischenprodukt | |
ATE476949T1 (de) | Saugfähiger artikel und verfahren zur herstellung eines saugfähigen artikels | |
DE60201968D1 (de) | Verfahren zur Herstellung eines dekorativen Armaturbretts und entsprechendes Armaturbrett | |
DE60222645D1 (de) | Verfahren zur herstellung von oxazolidinonen | |
DE60321208D1 (de) | Verfahren zur herstellung von 2,6-diamino-4,5,6,7-tetrahydrobenzothiazol | |
DE60321734D1 (de) | Verfahren zur Herstellung eines aus halbleitendem Siliziumkarbid-auf-Isolator Substrates (SOI) und Vorrichtung zur Durchführung des Verfahrens | |
DE60205928D1 (de) | Verfahren zur automatischen flächenbehandlung | |
DE60237036D1 (de) | Düse zum formen eines wabenstrukturkörpers und verfahren zur herstellung desselben | |
ATE205636T1 (de) | Verfahren zum rauhätzen einer halbleiter- oberfläche | |
DE602007011986D1 (de) | Einrichtung und verfahren zur nassbehandlung von plattenartigen artikeln | |
DE60336703D1 (de) | Verfahren zur herstellung von silicium | |
DE60032358D1 (de) | Verfahren zur herstellung von si-sic-gliedern zur thermischen behandlung von halbleitern | |
ATE516712T1 (de) | Verfahren zur herstellung der ergänzungsfuttermittel und apparatus | |
DE50009670D1 (de) | Verfahren zur herstellung optisch aktiver amine | |
DE10328845B4 (de) | Verfahren zur Oberflächenbehandlung einer Halbleiterscheibe | |
ATE457963T1 (de) | Verfahren zur herstellung eines nicht- beschlagenden elements | |
DE60237576D1 (de) | Reaktorbauteiloberflächenbehandlungsverfahren und Verfahren zur Herstellung des Reaktorbauteils unter Verwendung des Oberflächenbehandlungsverfahren |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |