DE68910374T2 - Elektrisch programierbarer Speicher mit mehreren bits pro Zelle. - Google Patents
Elektrisch programierbarer Speicher mit mehreren bits pro Zelle.Info
- Publication number
- DE68910374T2 DE68910374T2 DE89401183T DE68910374T DE68910374T2 DE 68910374 T2 DE68910374 T2 DE 68910374T2 DE 89401183 T DE89401183 T DE 89401183T DE 68910374 T DE68910374 T DE 68910374T DE 68910374 T2 DE68910374 T2 DE 68910374T2
- Authority
- DE
- Germany
- Prior art keywords
- bits per
- per cell
- programmable memory
- electrically programmable
- several bits
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8805511A FR2630573B1 (fr) | 1988-04-26 | 1988-04-26 | Memoire programmable electriquement avec plusieurs bits d'information par cellule |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE68910374D1 DE68910374D1 (de) | 1993-12-09 |
| DE68910374T2 true DE68910374T2 (de) | 1994-02-24 |
Family
ID=9365679
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE89401183T Expired - Fee Related DE68910374T2 (de) | 1988-04-26 | 1989-04-26 | Elektrisch programierbarer Speicher mit mehreren bits pro Zelle. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4964079A (de) |
| EP (1) | EP0340107B1 (de) |
| JP (1) | JP3101697B2 (de) |
| KR (1) | KR890016574A (de) |
| DE (1) | DE68910374T2 (de) |
| FR (1) | FR2630573B1 (de) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07105146B2 (ja) * | 1988-07-29 | 1995-11-13 | 三菱電機株式会社 | 不揮発性記憶装置 |
| JPH02260298A (ja) * | 1989-03-31 | 1990-10-23 | Oki Electric Ind Co Ltd | 不揮発性多値メモリ装置 |
| US5218569A (en) * | 1991-02-08 | 1993-06-08 | Banks Gerald J | Electrically alterable non-volatile memory with n-bits per memory cell |
| US6002614A (en) * | 1991-02-08 | 1999-12-14 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
| FR2683664A1 (fr) * | 1991-11-13 | 1993-05-14 | Sgs Thomson Microelectronics | Memoire integree electriquement programmable a un seuil transistor. |
| KR960000619B1 (ko) * | 1991-12-27 | 1996-01-10 | 후지쓰 가부시끼가이샤 | 일괄소거형의 불휘발성 반도체 기억장치 및 그의 구동제어회로 |
| US6222762B1 (en) | 1992-01-14 | 2001-04-24 | Sandisk Corporation | Multi-state memory |
| US5657332A (en) * | 1992-05-20 | 1997-08-12 | Sandisk Corporation | Soft errors handling in EEPROM devices |
| US6000843A (en) * | 1992-07-03 | 1999-12-14 | Nippon Steel Corporation | Electrically alterable nonvolatile semiconductor memory |
| US5450354A (en) * | 1992-08-31 | 1995-09-12 | Nippon Steel Corporation | Non-volatile semiconductor memory device detachable deterioration of memory cells |
| US5386132A (en) * | 1992-11-02 | 1995-01-31 | Wong; Chun C. D. | Multimedia storage system with highly compact memory device |
| US5418743A (en) * | 1992-12-07 | 1995-05-23 | Nippon Steel Corporation | Method of writing into non-volatile semiconductor memory |
| EP0649147A1 (de) * | 1993-10-11 | 1995-04-19 | Texas Instruments France | Speicheranordnung mit erhöhter-Kapazität |
| FR2714202B1 (fr) * | 1993-12-22 | 1996-01-12 | Sgs Thomson Microelectronics | Mémoire en circuit intégré à temps de lecture amélioré. |
| JP3476952B2 (ja) * | 1994-03-15 | 2003-12-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| US5515317A (en) * | 1994-06-02 | 1996-05-07 | Intel Corporation | Addressing modes for a dynamic single bit per cell to multiple bit per cell memory |
| JP3610621B2 (ja) * | 1994-11-11 | 2005-01-19 | ソニー株式会社 | 不揮発性半導体メモリ装置 |
| EP0724266B1 (de) * | 1995-01-27 | 2001-12-12 | STMicroelectronics S.r.l. | Schnittweises Annäherungsverfahren zum Abtasten von nichtflüchtigen Mehrfachniveauspeicherzellen und dementsprechende Abtastschaltung |
| KR100566466B1 (ko) * | 1995-01-31 | 2006-03-31 | 가부시끼가이샤 히다치 세이사꾸쇼 | 반도체 메모리 장치 |
| US6353554B1 (en) | 1995-02-27 | 2002-03-05 | Btg International Inc. | Memory apparatus including programmable non-volatile multi-bit memory cell, and apparatus and method for demarcating memory states of the cell |
| EP0734024B1 (de) * | 1995-03-23 | 2000-01-26 | STMicroelectronics S.r.l. | Leseschaltung für serielle dichotomische Abfühlung von mehrschichtigen nichtflüchtigen Speicherzellen |
| DE69516402T2 (de) * | 1995-07-31 | 2000-11-02 | St Microelectronics Srl | Gemischtes serielles paralleles dichotomisches Leseverfahren für nichtflüchtige Mehrpegel-Speicherzellen und Leseschaltung mit Verwendung eines solchen Verfahrens |
| US5815434A (en) * | 1995-09-29 | 1998-09-29 | Intel Corporation | Multiple writes per a single erase for a nonvolatile memory |
| JP3740212B2 (ja) * | 1996-05-01 | 2006-02-01 | 株式会社ルネサステクノロジ | 不揮発性半導体記憶装置 |
| JP3062730B2 (ja) | 1996-07-10 | 2000-07-12 | 株式会社日立製作所 | 不揮発性半導体記憶装置および書込み方法 |
| US6320785B1 (en) * | 1996-07-10 | 2001-11-20 | Hitachi, Ltd. | Nonvolatile semiconductor memory device and data writing method therefor |
| US5675537A (en) * | 1996-08-22 | 1997-10-07 | Advanced Micro Devices, Inc. | Erase method for page mode multiple bits-per-cell flash EEPROM |
| DE69627318T2 (de) | 1996-08-22 | 2004-02-12 | Stmicroelectronics S.R.L., Agrate Brianza | Mehrpegelige nichtflüchtige Speicheranordnung |
| US6839875B2 (en) * | 1996-10-18 | 2005-01-04 | Micron Technology, Inc. | Method and apparatus for performing error correction on data read from a multistate memory |
| FR2758645B1 (fr) * | 1997-01-22 | 2001-12-14 | Sgs Thomson Microelectronics | Dispositif et procede de programmation d'une memoire |
| US5909449A (en) * | 1997-09-08 | 1999-06-01 | Invox Technology | Multibit-per-cell non-volatile memory with error detection and correction |
| KR100280428B1 (ko) * | 1998-01-16 | 2001-02-01 | 김영환 | 다수의문턱전압을가지는메모리셀을센싱하는회로 |
| JP2000076873A (ja) * | 1998-08-26 | 2000-03-14 | Oki Micro Design:Kk | メモリセルのしきい値電圧制御方法及び半導体記憶装置 |
| KR100371022B1 (ko) * | 1998-11-26 | 2003-07-16 | 주식회사 하이닉스반도체 | 다중비트 메모리셀의 데이터 센싱장치 |
| US6662263B1 (en) | 2000-03-03 | 2003-12-09 | Multi Level Memory Technology | Sectorless flash memory architecture |
| US6396744B1 (en) | 2000-04-25 | 2002-05-28 | Multi Level Memory Technology | Flash memory with dynamic refresh |
| US6856568B1 (en) | 2000-04-25 | 2005-02-15 | Multi Level Memory Technology | Refresh operations that change address mappings in a non-volatile memory |
| US7079422B1 (en) | 2000-04-25 | 2006-07-18 | Samsung Electronics Co., Ltd. | Periodic refresh operations for non-volatile multiple-bit-per-cell memory |
| US6466476B1 (en) | 2001-01-18 | 2002-10-15 | Multi Level Memory Technology | Data coding for multi-bit-per-cell memories having variable numbers of bits per memory cell |
| US7012835B2 (en) * | 2003-10-03 | 2006-03-14 | Sandisk Corporation | Flash memory data correction and scrub techniques |
| US7173852B2 (en) * | 2003-10-03 | 2007-02-06 | Sandisk Corporation | Corrected data storage and handling methods |
| WO2005078732A1 (en) * | 2004-02-05 | 2005-08-25 | Iota Technology, Inc. | Electronic memory with tri-level cell pair |
| US7352619B2 (en) * | 2004-02-05 | 2008-04-01 | Iota Technology, Inc. | Electronic memory with binary storage elements |
| US7395404B2 (en) * | 2004-12-16 | 2008-07-01 | Sandisk Corporation | Cluster auto-alignment for storing addressable data packets in a non-volatile memory array |
| US7315916B2 (en) * | 2004-12-16 | 2008-01-01 | Sandisk Corporation | Scratch pad block |
| US7716538B2 (en) * | 2006-09-27 | 2010-05-11 | Sandisk Corporation | Memory with cell population distribution assisted read margining |
| US7886204B2 (en) * | 2006-09-27 | 2011-02-08 | Sandisk Corporation | Methods of cell population distribution assisted read margining |
| US7477547B2 (en) * | 2007-03-28 | 2009-01-13 | Sandisk Corporation | Flash memory refresh techniques triggered by controlled scrub data reads |
| US7573773B2 (en) * | 2007-03-28 | 2009-08-11 | Sandisk Corporation | Flash memory with data refresh triggered by controlled scrub data reads |
| US9552840B2 (en) | 2010-10-25 | 2017-01-24 | Qualcomm Incorporated | Three-dimensional sound capturing and reproducing with multi-microphones |
| US8687421B2 (en) | 2011-11-21 | 2014-04-01 | Sandisk Technologies Inc. | Scrub techniques for use with dynamic read |
| US9230689B2 (en) | 2014-03-17 | 2016-01-05 | Sandisk Technologies Inc. | Finding read disturbs on non-volatile memories |
| US9552171B2 (en) | 2014-10-29 | 2017-01-24 | Sandisk Technologies Llc | Read scrub with adaptive counter management |
| US9978456B2 (en) | 2014-11-17 | 2018-05-22 | Sandisk Technologies Llc | Techniques for reducing read disturb in partially written blocks of non-volatile memory |
| US9349479B1 (en) | 2014-11-18 | 2016-05-24 | Sandisk Technologies Inc. | Boundary word line operation in nonvolatile memory |
| US9449700B2 (en) | 2015-02-13 | 2016-09-20 | Sandisk Technologies Llc | Boundary word line search and open block read methods with reduced read disturb |
| US9653154B2 (en) | 2015-09-21 | 2017-05-16 | Sandisk Technologies Llc | Write abort detection for multi-state memories |
| US11144824B2 (en) * | 2019-01-29 | 2021-10-12 | Silicon Storage Technology, Inc. | Algorithms and circuitry for verifying a value stored during a programming operation of a non-volatile memory cell in an analog neural memory in deep learning artificial neural network |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137181A (ja) * | 1982-02-05 | 1983-08-15 | Toshiba Corp | 半導体メモリ |
| JPS59104796A (ja) * | 1982-12-03 | 1984-06-16 | Mitsubishi Electric Corp | 不揮発性半導体メモリ装置 |
| EP0136119B1 (de) * | 1983-09-16 | 1988-06-29 | Fujitsu Limited | Festwertspeicherschaltung mit Multi-Bitzellen |
| JPS626493A (ja) * | 1985-06-29 | 1987-01-13 | Ricoh Co Ltd | 書込みと消去が可能な半導体メモリ装置 |
| JPH0828431B2 (ja) * | 1986-04-22 | 1996-03-21 | 日本電気株式会社 | 半導体記憶装置 |
| JPS6342099A (ja) * | 1986-08-06 | 1988-02-23 | Fujitsu Ltd | ３値レベルｒｏｍ |
| JPS63153799A (ja) * | 1986-08-08 | 1988-06-27 | Nec Corp | 半導体メモリ |
-
1988
- 1988-04-26 FR FR8805511A patent/FR2630573B1/fr not_active Expired - Lifetime
-
1989
- 1989-04-24 US US07/342,476 patent/US4964079A/en not_active Expired - Lifetime
- 1989-04-25 KR KR1019890005514A patent/KR890016574A/ko not_active Application Discontinuation
- 1989-04-26 EP EP89401183A patent/EP0340107B1/de not_active Expired - Lifetime
- 1989-04-26 DE DE89401183T patent/DE68910374T2/de not_active Expired - Fee Related
- 1989-04-26 JP JP10714189A patent/JP3101697B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4964079A (en) | 1990-10-16 |
| JP3101697B2 (ja) | 2000-10-23 |
| JPH0215497A (ja) | 1990-01-19 |
| FR2630573B1 (fr) | 1990-07-13 |
| FR2630573A1 (fr) | 1989-10-27 |
| EP0340107A1 (de) | 1989-11-02 |
| DE68910374D1 (de) | 1993-12-09 |
| EP0340107B1 (de) | 1993-11-03 |
| KR890016574A (ko) | 1989-11-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |