DE69018348D1 - Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren. - Google Patents

Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren.

Info

Publication number
DE69018348D1
DE69018348D1 DE69018348T DE69018348T DE69018348D1 DE 69018348 D1 DE69018348 D1 DE 69018348D1 DE 69018348 T DE69018348 T DE 69018348T DE 69018348 T DE69018348 T DE 69018348T DE 69018348 D1 DE69018348 D1 DE 69018348D1
Authority
DE
Germany
Prior art keywords
memory device
control method
semiconductor memory
organic semiconductor
misfet structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69018348T
Other languages
English (en)
Other versions
DE69018348T2 (de
Inventor
Yoshio Kishimoto
Mamoru Soga
Susumu Maruno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1192961A external-priority patent/JPH0760907B2/ja
Priority claimed from JP2018310A external-priority patent/JPH03222476A/ja
Priority claimed from JP2035121A external-priority patent/JP2502782B2/ja
Priority claimed from JP2113390A external-priority patent/JPH0766991B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69018348D1 publication Critical patent/DE69018348D1/de
Application granted granted Critical
Publication of DE69018348T2 publication Critical patent/DE69018348T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
DE69018348T 1989-07-25 1990-07-24 Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren. Expired - Fee Related DE69018348T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1192961A JPH0760907B2 (ja) 1989-07-25 1989-07-25 電気制御素子およびその応用装置
JP2018310A JPH03222476A (ja) 1990-01-29 1990-01-29 電気制御素子
JP2035121A JP2502782B2 (ja) 1990-02-15 1990-02-15 ニュ―ラルネットワ―ク用電気可塑性素子およびその制御方法
JP2113390A JPH0766991B2 (ja) 1990-04-27 1990-04-27 電気制御素子

Publications (2)

Publication Number Publication Date
DE69018348D1 true DE69018348D1 (de) 1995-05-11
DE69018348T2 DE69018348T2 (de) 1995-08-03

Family

ID=27456935

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69018348T Expired - Fee Related DE69018348T2 (de) 1989-07-25 1990-07-24 Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren.

Country Status (3)

Country Link
US (1) US5153681A (de)
EP (1) EP0418504B1 (de)
DE (1) DE69018348T2 (de)

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US7675766B2 (en) * 2000-02-11 2010-03-09 Axon Technologies Corporation Microelectric programmable device and methods of forming and programming the same
US7385219B2 (en) 2000-02-11 2008-06-10 A{umlaut over (x)}on Technologies Corporation Optimized solid electrolyte for programmable metallization cell devices and structures
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DE10061299A1 (de) 2000-12-08 2002-06-27 Siemens Ag Vorrichtung zur Feststellung und/oder Weiterleitung zumindest eines Umwelteinflusses, Herstellungsverfahren und Verwendung dazu
SE520339C2 (sv) * 2001-03-07 2003-06-24 Acreo Ab Elektrokemisk transistoranordning och dess tillverkningsförfarande
US7012306B2 (en) 2001-03-07 2006-03-14 Acreo Ab Electrochemical device
JP4731794B2 (ja) * 2001-05-07 2011-07-27 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリ効果を有するスイッチ素子及び該素子をスイッチングさせる方法
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US6855977B2 (en) * 2001-05-07 2005-02-15 Advanced Micro Devices, Inc. Memory device with a self-assembled polymer film and method of making the same
US6781868B2 (en) * 2001-05-07 2004-08-24 Advanced Micro Devices, Inc. Molecular memory device
CN1276518C (zh) * 2001-05-07 2006-09-20 先进微装置公司 使用复合分子材料的浮置栅极存储装置
US6873540B2 (en) * 2001-05-07 2005-03-29 Advanced Micro Devices, Inc. Molecular memory cell
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
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US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
JP4951834B2 (ja) * 2001-09-19 2012-06-13 日本電気株式会社 薄膜トランジスタ
JP4360801B2 (ja) * 2001-12-25 2009-11-11 シャープ株式会社 トランジスタおよびそれを用いた表示装置
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
DE10226370B4 (de) 2002-06-13 2008-12-11 Polyic Gmbh & Co. Kg Substrat für ein elektronisches Bauteil, Verwendung des Substrates, Verfahren zur Erhöhung der Ladungsträgermobilität und Organischer Feld-Effekt Transistor (OFET)
JP4878429B2 (ja) * 2002-07-22 2012-02-15 株式会社リコー 能動素子及びそれを有するｅｌ表示素子
WO2004017439A2 (de) 2002-07-29 2004-02-26 Siemens Aktiengesellschaft Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu
WO2004019346A1 (en) * 2002-08-23 2004-03-04 Agfa-Gevaert Layer configuration comprising an electron-blocking element
JP2005537637A (ja) 2002-08-23 2005-12-08 ジーメンス アクツィエンゲゼルシャフト 過電圧保護用の有機構成部品および関連する回路
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US6890868B2 (en) * 2002-10-17 2005-05-10 Xerox Corporation Process for depositing gelable composition that includes dissolving gelable composition in liquid with agitating to disrupt gelling
US7297621B2 (en) 2003-04-15 2007-11-20 California Institute Of Technology Flexible carbon-based ohmic contacts for organic transistors
DE10340643B4 (de) 2003-09-03 2009-04-16 Polyic Gmbh & Co. Kg Druckverfahren zur Herstellung einer Doppelschicht für Polymerelektronik-Schaltungen, sowie dadurch hergestelltes elektronisches Bauelement mit Doppelschicht
DE102004006583A1 (de) 2004-02-10 2005-09-01 H.C. Starck Gmbh Polythiophenformulierungen zur Verbesserung von organischen Leuchtdioden
DE102004040831A1 (de) 2004-08-23 2006-03-09 Polyic Gmbh & Co. Kg Funketikettfähige Umverpackung
DE102004059464A1 (de) 2004-12-10 2006-06-29 Polyic Gmbh & Co. Kg Elektronikbauteil mit Modulator
DE102004059465A1 (de) 2004-12-10 2006-06-14 Polyic Gmbh & Co. Kg Erkennungssystem
DE102004063435A1 (de) 2004-12-23 2006-07-27 Polyic Gmbh & Co. Kg Organischer Gleichrichter
DE102005009819A1 (de) 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005017655B4 (de) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005044306A1 (de) 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
DE102006013605A1 (de) 2006-03-22 2007-10-11 Polyic Gmbh & Co. Kg Verfahren zum Programmieren einer elektronischen Schaltung sowie elektronische Schaltung
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US8106386B2 (en) 2006-12-28 2012-01-31 Alcatel Lucent Organic semiconductor compositions including plasticizers
US20100092656A1 (en) * 2008-10-10 2010-04-15 Axon Technologies Corporation Printable ionic structure and method of formation
WO2010068221A1 (en) * 2008-12-12 2010-06-17 Hewlett-Packard Development Company, L.P. Memristive device
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Also Published As

Publication number Publication date
US5153681A (en) 1992-10-06
DE69018348T2 (de) 1995-08-03
EP0418504B1 (de) 1995-04-05
EP0418504A3 (en) 1991-05-15
EP0418504A2 (de) 1991-03-27

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee