DE69028507D1 - Nichtflüchtige Halbleiterspeicheranordnung mit einer isolierenden Schicht für Tunneleffekt - Google Patents
Nichtflüchtige Halbleiterspeicheranordnung mit einer isolierenden Schicht für TunneleffektInfo
- Publication number
- DE69028507D1 DE69028507D1 DE69028507T DE69028507T DE69028507D1 DE 69028507 D1 DE69028507 D1 DE 69028507D1 DE 69028507 T DE69028507 T DE 69028507T DE 69028507 T DE69028507 T DE 69028507T DE 69028507 D1 DE69028507 D1 DE 69028507D1
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- memory device
- semiconductor memory
- volatile semiconductor
- tunnel effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1318976A JPH081933B2 (ja) | 1989-12-11 | 1989-12-11 | 不揮発性半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69028507D1 true DE69028507D1 (de) | 1996-10-17 |
| DE69028507T2 DE69028507T2 (de) | 1997-02-20 |
Family
ID=18105100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69028507T Expired - Fee Related DE69028507T2 (de) | 1989-12-11 | 1990-12-11 | Nichtflüchtige Halbleiterspeicheranordnung mit einer isolierenden Schicht für Tunneleffekt |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5138410A (de) |
| EP (1) | EP0436156B1 (de) |
| JP (1) | JPH081933B2 (de) |
| KR (1) | KR940009642B1 (de) |
| DE (1) | DE69028507T2 (de) |
Families Citing this family (51)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0388370A (ja) * | 1989-08-31 | 1991-04-12 | Toshiba Corp | 半導体記憶装置の製造方法 |
| JPH0491469A (ja) * | 1990-08-01 | 1992-03-24 | Sharp Corp | 不揮発性半導体メモリ |
| US5086325A (en) * | 1990-11-21 | 1992-02-04 | Atmel Corporation | Narrow width EEPROM with single diffusion electrode formation |
| US5739569A (en) * | 1991-05-15 | 1998-04-14 | Texas Instruments Incorporated | Non-volatile memory cell with oxide and nitride tunneling layers |
| US5364806A (en) * | 1991-08-29 | 1994-11-15 | Hyundai Electronics Industries Co., Ltd. | Method of making a self-aligned dual-bit split gate (DSG) flash EEPROM cell |
| US5379253A (en) * | 1992-06-01 | 1995-01-03 | National Semiconductor Corporation | High density EEPROM cell array with novel programming scheme and method of manufacture |
| US5331189A (en) * | 1992-06-19 | 1994-07-19 | International Business Machines Corporation | Asymmetric multilayered dielectric material and a flash EEPROM using the same |
| JP2585180B2 (ja) * | 1992-09-02 | 1997-02-26 | 三菱電機株式会社 | 半導体記憶装置およびその製造方法 |
| US5404037A (en) * | 1994-03-17 | 1995-04-04 | National Semiconductor Corporation | EEPROM cell with the drain diffusion region self-aligned to the tunnel oxide region |
| US5432749A (en) * | 1994-04-26 | 1995-07-11 | National Semiconductor Corporation | Non-volatile memory cell having hole confinement layer for reducing band-to-band tunneling |
| KR0142603B1 (ko) * | 1995-03-14 | 1998-07-01 | 김주용 | 플래쉬 이이피롬 셀 및 그 제조방법 |
| JPH08330454A (ja) * | 1995-06-02 | 1996-12-13 | Sony Corp | 浮遊ゲート型不揮発性半導体記憶装置 |
| WO1998038682A1 (en) * | 1997-02-27 | 1998-09-03 | Koninklijke Philips Electronics N.V. | Semiconductor device with a programmable semiconductor element |
| JPH11195753A (ja) * | 1997-10-27 | 1999-07-21 | Seiko Epson Corp | 半導体装置およびその製造方法 |
| TW454354B (en) * | 1998-07-22 | 2001-09-11 | Winbond Electronics Corp | Improved structure of nonvolatile memory and the manufacturing process thereof |
| KR100311971B1 (ko) * | 1998-12-23 | 2001-12-28 | 윤종용 | 비휘발성메모리반도체소자제조방법 |
| KR100426481B1 (ko) * | 2001-06-26 | 2004-04-13 | 주식회사 하이닉스반도체 | 코드 저장 메모리 셀 제조 방법 |
| US6798693B2 (en) * | 2001-09-18 | 2004-09-28 | Kilopass Technologies, Inc. | Semiconductor memory cell and memory array using a breakdown phenomena in an ultra-thin dielectric |
| EP1436815B1 (de) * | 2001-09-18 | 2010-03-03 | Kilopass Technology, Inc. | Halbleiterspeicherzelle und speicherarray mit einem durchbruchsphänomen in einem ultradünnen dielektrikum |
| US6766960B2 (en) * | 2001-10-17 | 2004-07-27 | Kilopass Technologies, Inc. | Smart card having memory using a breakdown phenomena in an ultra-thin dielectric |
| US6700151B2 (en) * | 2001-10-17 | 2004-03-02 | Kilopass Technologies, Inc. | Reprogrammable non-volatile memory using a breakdown phenomena in an ultra-thin dielectric |
| US6898116B2 (en) * | 2002-04-26 | 2005-05-24 | Kilopass Technologies, Inc. | High density semiconductor memory cell and memory array using a single transistor having a buried N+ connection |
| US6777757B2 (en) * | 2002-04-26 | 2004-08-17 | Kilopass Technologies, Inc. | High density semiconductor memory cell and memory array using a single transistor |
| US6940751B2 (en) * | 2002-04-26 | 2005-09-06 | Kilopass Technologies, Inc. | High density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown |
| US6992925B2 (en) * | 2002-04-26 | 2006-01-31 | Kilopass Technologies, Inc. | High density semiconductor memory cell and memory array using a single transistor and having counter-doped poly and buried diffusion wordline |
| US6650143B1 (en) | 2002-07-08 | 2003-11-18 | Kilopass Technologies, Inc. | Field programmable gate array based upon transistor gate oxide breakdown |
| US7031209B2 (en) * | 2002-09-26 | 2006-04-18 | Kilopass Technology, Inc. | Methods and circuits for testing programmability of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric |
| US7042772B2 (en) * | 2002-09-26 | 2006-05-09 | Kilopass Technology, Inc. | Methods and circuits for programming of a semiconductor memory cell and memory array using a breakdown phenomenon in an ultra-thin dielectric |
| US6791891B1 (en) | 2003-04-02 | 2004-09-14 | Kilopass Technologies, Inc. | Method of testing the thin oxide of a semiconductor memory cell that uses breakdown voltage |
| US6924664B2 (en) * | 2003-08-15 | 2005-08-02 | Kilopass Technologies, Inc. | Field programmable gate array |
| US6972986B2 (en) * | 2004-02-03 | 2005-12-06 | Kilopass Technologies, Inc. | Combination field programmable gate array allowing dynamic reprogrammability and non-votatile programmability based upon transistor gate oxide breakdown |
| US7064973B2 (en) * | 2004-02-03 | 2006-06-20 | Klp International, Ltd. | Combination field programmable gate array allowing dynamic reprogrammability |
| US20050218929A1 (en) * | 2004-04-02 | 2005-10-06 | Man Wang | Field programmable gate array logic cell and its derivatives |
| US7755162B2 (en) | 2004-05-06 | 2010-07-13 | Sidense Corp. | Anti-fuse memory cell |
| US8735297B2 (en) | 2004-05-06 | 2014-05-27 | Sidense Corporation | Reverse optical proximity correction method |
| US9123572B2 (en) | 2004-05-06 | 2015-09-01 | Sidense Corporation | Anti-fuse memory cell |
| US7402855B2 (en) * | 2004-05-06 | 2008-07-22 | Sidense Corp. | Split-channel antifuse array architecture |
| US20050275427A1 (en) * | 2004-06-10 | 2005-12-15 | Man Wang | Field programmable gate array logic unit and its cluster |
| US7164290B2 (en) * | 2004-06-10 | 2007-01-16 | Klp International, Ltd. | Field programmable gate array logic unit and its cluster |
| US7135886B2 (en) * | 2004-09-20 | 2006-11-14 | Klp International, Ltd. | Field programmable gate arrays using both volatile and nonvolatile memory cell properties and their control |
| US7315474B2 (en) | 2005-01-03 | 2008-01-01 | Macronix International Co., Ltd | Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays |
| US7193436B2 (en) * | 2005-04-18 | 2007-03-20 | Klp International Ltd. | Fast processing path using field programmable gate array logic units |
| US7576386B2 (en) * | 2005-08-04 | 2009-08-18 | Macronix International Co., Ltd. | Non-volatile memory semiconductor device having an oxide-nitride-oxide (ONO) top dielectric layer |
| US7253057B1 (en) * | 2006-04-06 | 2007-08-07 | Atmel Corporation | Memory cell with reduced size and standby current |
| US20080073690A1 (en) * | 2006-09-26 | 2008-03-27 | Sung-Kweon Baek | Flash memory device including multilayer tunnel insulator and method of fabricating the same |
| US8330207B2 (en) * | 2006-09-26 | 2012-12-11 | Samsung Electronics Co., Ltd. | Flash memory device including multilayer tunnel insulator and method of fabricating the same |
| US7838923B2 (en) * | 2007-08-09 | 2010-11-23 | Macronix International Co., Ltd. | Lateral pocket implant charge trapping devices |
| US7737488B2 (en) * | 2007-08-09 | 2010-06-15 | Macronix International Co., Ltd. | Blocking dielectric engineered charge trapping memory cell with high speed erase |
| JP5606235B2 (ja) * | 2010-09-14 | 2014-10-15 | セイコーインスツル株式会社 | 半導体不揮発性メモリ装置 |
| JP2015130460A (ja) * | 2014-01-09 | 2015-07-16 | セイコーインスツル株式会社 | 不揮発性半導体記憶素子 |
| US9281413B2 (en) | 2014-01-28 | 2016-03-08 | Infineon Technologies Austria Ag | Enhancement mode device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58130571A (ja) * | 1982-01-29 | 1983-08-04 | Hitachi Ltd | 半導体装置 |
| JPS5955071A (ja) * | 1982-09-24 | 1984-03-29 | Hitachi Micro Comput Eng Ltd | 不揮発性半導体装置 |
| JPH0669099B2 (ja) * | 1984-12-21 | 1994-08-31 | 株式会社東芝 | Ｍｉｓ型半導体装置 |
| JPH0746704B2 (ja) * | 1986-05-15 | 1995-05-17 | 松下電子工業株式会社 | 半導体記憶装置 |
| IT1191566B (it) * | 1986-06-27 | 1988-03-23 | Sgs Microelettronica Spa | Dispositivo di memoria non labile a semiconduttore del tipo a porta non connessa (floating gate) alterabile elettricamente con area di tunnel ridotta e procedimento di fabbricazione |
| JPH01179369A (ja) * | 1988-01-05 | 1989-07-17 | Toshiba Corp | 不揮発性半導体記憶装置の製造方法 |
| JPH01289171A (ja) * | 1988-05-16 | 1989-11-21 | Sharp Corp | 不揮発性半導体記憶装置の製造方法 |
-
1989
- 1989-12-11 JP JP1318976A patent/JPH081933B2/ja not_active Expired - Lifetime
-
1990
- 1990-12-06 US US07/623,064 patent/US5138410A/en not_active Expired - Lifetime
- 1990-12-11 KR KR1019900020302A patent/KR940009642B1/ko not_active IP Right Cessation
- 1990-12-11 EP EP90123823A patent/EP0436156B1/de not_active Expired - Lifetime
- 1990-12-11 DE DE69028507T patent/DE69028507T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US5138410A (en) | 1992-08-11 |
| KR940009642B1 (ko) | 1994-10-15 |
| EP0436156A1 (de) | 1991-07-10 |
| JPH081933B2 (ja) | 1996-01-10 |
| KR910013558A (ko) | 1991-08-08 |
| JPH03181178A (ja) | 1991-08-07 |
| DE69028507T2 (de) | 1997-02-20 |
| EP0436156B1 (de) | 1996-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |