DE69031370T2 - Gasätzung von substraten für entfernung von oxidschichten - Google Patents

Gasätzung von substraten für entfernung von oxidschichten

Info

Publication number
DE69031370T2
DE69031370T2 DE69031370T DE69031370T DE69031370T2 DE 69031370 T2 DE69031370 T2 DE 69031370T2 DE 69031370 T DE69031370 T DE 69031370T DE 69031370 T DE69031370 T DE 69031370T DE 69031370 T2 DE69031370 T2 DE 69031370T2
Authority
DE
Germany
Prior art keywords
removal
oxide layers
gas etching
etching substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031370T
Other languages
English (en)
Other versions
DE69031370D1 (de
Inventor
Daniel Syverson
Richard Novak
Eugene Haak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tel Manufacturing and Engineering of America Inc
Original Assignee
FSI International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSI International Inc filed Critical FSI International Inc
Publication of DE69031370D1 publication Critical patent/DE69031370D1/de
Application granted granted Critical
Publication of DE69031370T2 publication Critical patent/DE69031370T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
DE69031370T 1989-04-07 1990-02-12 Gasätzung von substraten für entfernung von oxidschichten Expired - Fee Related DE69031370T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/334,343 US4900395A (en) 1989-04-07 1989-04-07 HF gas etching of wafers in an acid processor
PCT/US1990/000791 WO1990012419A1 (en) 1989-04-07 1990-02-12 Hf gas etching of wafers in an acid processor

Publications (2)

Publication Number Publication Date
DE69031370D1 DE69031370D1 (de) 1997-10-09
DE69031370T2 true DE69031370T2 (de) 1998-01-22

Family

ID=23306788

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69031370T Expired - Fee Related DE69031370T2 (de) 1989-04-07 1990-02-12 Gasätzung von substraten für entfernung von oxidschichten

Country Status (4)

Country Link
US (1) US4900395A (de)
EP (1) EP0420958B1 (de)
DE (1) DE69031370T2 (de)
WO (1) WO1990012419A1 (de)

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Also Published As

Publication number Publication date
DE69031370D1 (de) 1997-10-09
EP0420958B1 (de) 1997-09-03
US4900395A (en) 1990-02-13
EP0420958A1 (de) 1991-04-10
WO1990012419A1 (en) 1990-10-18

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