DE69114257D1 - Monolithische halbleiter-laserquelle. - Google Patents

Monolithische halbleiter-laserquelle.

Info

Publication number
DE69114257D1
DE69114257D1 DE69114257T DE69114257T DE69114257D1 DE 69114257 D1 DE69114257 D1 DE 69114257D1 DE 69114257 T DE69114257 T DE 69114257T DE 69114257 T DE69114257 T DE 69114257T DE 69114257 D1 DE69114257 D1 DE 69114257D1
Authority
DE
Germany
Prior art keywords
semiconductor laser
laser source
monolithic semiconductor
monolithic
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69114257T
Other languages
English (en)
Inventor
Richard Normandin
Francoise Chatenoud
Robin Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Council of Canada
Original Assignee
National Research Council of Canada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Council of Canada filed Critical National Research Council of Canada
Application granted granted Critical
Publication of DE69114257D1 publication Critical patent/DE69114257D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/353—Frequency conversion, i.e. wherein a light beam is generated with frequency components different from those of the incident light beams
    • G02F1/3534—Three-wave interaction, e.g. sum-difference frequency generation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/35—Non-linear optics
    • G02F1/355—Non-linear optics characterised by the materials used
    • G02F1/3556—Semiconductor materials, e.g. quantum wells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0604—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium comprising a non-linear region, e.g. generating harmonics of the laser frequency
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0607—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
    • H01S5/0608—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature controlled by light, e.g. optical switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06243—Controlling other output parameters than intensity or frequency controlling the position or direction of the emitted beam
DE69114257T 1990-06-29 1991-06-27 Monolithische halbleiter-laserquelle. Expired - Lifetime DE69114257D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/545,497 US5051617A (en) 1990-06-29 1990-06-29 Multilayer semiconductor waveguide device for sum frequency generation from contra-propagating beams
PCT/CA1991/000225 WO1992000548A1 (en) 1990-06-29 1991-06-27 Monolithic semiconductor harmonic laser sources

Publications (1)

Publication Number Publication Date
DE69114257D1 true DE69114257D1 (de) 1995-12-07

Family

ID=24176484

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69114257T Expired - Lifetime DE69114257D1 (de) 1990-06-29 1991-06-27 Monolithische halbleiter-laserquelle.

Country Status (6)

Country Link
US (1) US5051617A (de)
EP (1) EP0494274B1 (de)
JP (1) JP2693269B2 (de)
CA (1) CA2064726C (de)
DE (1) DE69114257D1 (de)
WO (1) WO1992000548A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2658620B1 (fr) * 1990-02-16 1992-04-30 Thomson Csf Composant optique pour applications en optique integree.
CA2028506C (en) * 1990-10-25 2001-07-17 National Research Council Of Canada Optical multilayer structures for harmonic laser emission
US5249193A (en) * 1991-03-20 1993-09-28 Brother Kogyo Kabushiki Kaisha Solid-state laser system
JPH05259567A (ja) * 1992-03-13 1993-10-08 Nippon Telegr & Teleph Corp <Ntt> 導波形多重量子井戸光制御素子
KR940007557A (ko) * 1992-09-07 1994-04-27 에프. 제이. 스미트 전자기 방사주파수를 상승시키는 광학소자 및 광전자 장치
US5345456A (en) * 1993-03-11 1994-09-06 National Research Council Of Canada Spatially addressable surface emission sum frequency device
US5387972A (en) * 1993-03-15 1995-02-07 National Research Council Of Canada Coherent phase and frequency detection using sum-frequency mixing in non-linear waveguides
JPH0730181A (ja) * 1993-06-30 1995-01-31 Hewlett Packard Co <Hp> 面発光型第２高調波生成素子
US5422903A (en) * 1993-04-15 1995-06-06 Yamada; Norihide Surface emitting second harmonic generating device
US5436920A (en) * 1993-05-18 1995-07-25 Matsushita Electric Industrial Co., Ltd. Laser device
US5408110A (en) * 1993-06-28 1995-04-18 National Research Council Of Canada Second-harmonic generation in semiconductor heterostructures
US5375011A (en) * 1993-08-18 1994-12-20 National Research Council Of Canada Non-linear, real-time, micrometer resolution optical time domain reflectometers for optoelectronic circuits diagnostic and sensing applications
JP2002198612A (ja) * 2000-12-25 2002-07-12 Nippon Sheet Glass Co Ltd 波長監視装置
US6845186B2 (en) * 2002-03-14 2005-01-18 Nippon Sheet Glass Co., Ltd. Optical circuit with harmonic generator
US9880445B1 (en) * 2015-06-19 2018-01-30 Stc.Unm Harmonic generation using optimized stack of thin films

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3746879A (en) * 1972-05-25 1973-07-17 Ibm Superlattice harmonic generator & mixer for electromagnetic waves
US3982135A (en) * 1975-01-14 1976-09-21 Bell Telephone Laboratories, Incorporated Phase matching in a laminar structure
US4382660A (en) * 1976-06-16 1983-05-10 Massachusetts Institute Of Technology Optical transistors and logic circuits embodying the same
JPS60123084A (ja) * 1983-12-08 1985-07-01 Matsushita Electric Ind Co Ltd 半導体光発生装置
US4904038A (en) * 1984-05-30 1990-02-27 Litton Systems, Inc. Guided wave optical frequency shifter
DE3611182A1 (de) * 1986-04-03 1987-10-08 Robert Dr Schimpe Einrichtung zur beeinflussung von wellen, insbesondere von lichtwellen
US4743083A (en) * 1985-12-30 1988-05-10 Schimpe Robert M Cylindrical diffraction grating couplers and distributed feedback resonators for guided wave devices
US4763019A (en) * 1986-09-09 1988-08-09 American Telephone And Telegraph Company, At&T Bell Laboratories Apparatus comprising harmonic generation means
US4930132A (en) * 1987-12-28 1990-05-29 Canon Kabushiki Kaisha Second harmonic wave generating device having active layer and second harmonic wave generating layer on same substrate
US4896195A (en) * 1988-03-14 1990-01-23 Trw Inc. Superluminescent diode
US4904045A (en) * 1988-03-25 1990-02-27 American Telephone And Telegraph Company Grating coupler with monolithically integrated quantum well index modulator
WO1990003055A1 (en) * 1988-09-01 1990-03-22 Seiko Epson Corporation Light emitting device and method of producing the same
US4948960A (en) * 1988-09-20 1990-08-14 The University Of Delaware Dual mode light emitting diode/detector diode for optical fiber transmission lines
US4905253A (en) * 1989-01-27 1990-02-27 American Telephone And Telegraph Company Distributed Bragg reflector laser for frequency modulated communication systems
DE8902040U1 (de) * 1989-02-21 1989-06-01 Griesemer, Albert, 5438 Westerburg, De

Also Published As

Publication number Publication date
WO1992000548A1 (en) 1992-01-09
US5051617A (en) 1991-09-24
CA2064726A1 (en) 1991-12-30
EP0494274B1 (de) 1995-11-02
JP2693269B2 (ja) 1997-12-24
EP0494274A1 (de) 1992-07-15
CA2064726C (en) 1996-09-17
JPH04505224A (ja) 1992-09-10

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Legal Events

Date Code Title Description
8332 No legal effect for de