DE69127518T2 - Digitalrechner, der eine Anlage für das aufeinanderfolgende Auffrischen einer erweiterbaren dynamischen RAM-Speicherschaltung hat - Google Patents

Digitalrechner, der eine Anlage für das aufeinanderfolgende Auffrischen einer erweiterbaren dynamischen RAM-Speicherschaltung hat

Info

Publication number
DE69127518T2
DE69127518T2 DE69127518T DE69127518T DE69127518T2 DE 69127518 T2 DE69127518 T2 DE 69127518T2 DE 69127518 T DE69127518 T DE 69127518T DE 69127518 T DE69127518 T DE 69127518T DE 69127518 T2 DE69127518 T2 DE 69127518T2
Authority
DE
Germany
Prior art keywords
memory circuit
dynamic ram
digital computer
ram memory
successive refresh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69127518T
Other languages
English (en)
Other versions
DE69127518D1 (de
Inventor
Keith D Matteson
Michael L Longwell
Terry J Parks
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dell USA LP
Original Assignee
Dell USA LP
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dell USA LP filed Critical Dell USA LP
Publication of DE69127518D1 publication Critical patent/DE69127518D1/de
Application granted granted Critical
Publication of DE69127518T2 publication Critical patent/DE69127518T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/406—Management or control of the refreshing or charge-regeneration cycles
DE69127518T 1990-06-19 1991-06-19 Digitalrechner, der eine Anlage für das aufeinanderfolgende Auffrischen einer erweiterbaren dynamischen RAM-Speicherschaltung hat Expired - Lifetime DE69127518T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US54004990A 1990-06-19 1990-06-19

Publications (2)

Publication Number Publication Date
DE69127518D1 DE69127518D1 (de) 1997-10-09
DE69127518T2 true DE69127518T2 (de) 1998-04-02

Family

ID=24153771

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69127518T Expired - Lifetime DE69127518T2 (de) 1990-06-19 1991-06-19 Digitalrechner, der eine Anlage für das aufeinanderfolgende Auffrischen einer erweiterbaren dynamischen RAM-Speicherschaltung hat

Country Status (4)

Country Link
US (1) US5959923A (de)
EP (1) EP0465050B1 (de)
JP (1) JPH04229487A (de)
DE (1) DE69127518T2 (de)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4246812B2 (ja) * 1997-06-12 2009-04-02 パナソニック株式会社 半導体回路及びその制御方法
US6389497B1 (en) * 1999-01-22 2002-05-14 Analog Devices, Inc. DRAM refresh monitoring and cycle accurate distributed bus arbitration in a multi-processing environment
US6941415B1 (en) * 2000-08-21 2005-09-06 Micron Technology, Inc. DRAM with hidden refresh
US6633952B2 (en) * 2000-10-03 2003-10-14 Broadcom Corporation Programmable refresh scheduler for embedded DRAMs
US6948010B2 (en) * 2000-12-20 2005-09-20 Stratus Technologies Bermuda Ltd. Method and apparatus for efficiently moving portions of a memory block
US6493250B2 (en) * 2000-12-28 2002-12-10 Intel Corporation Multi-tier point-to-point buffered memory interface
US6766413B2 (en) 2001-03-01 2004-07-20 Stratus Technologies Bermuda Ltd. Systems and methods for caching with file-level granularity
JP2003282823A (ja) * 2002-03-26 2003-10-03 Toshiba Corp 半導体集積回路
DE10306062B3 (de) * 2003-02-13 2004-08-19 Infineon Technologies Ag Speichermodul mit einer Mehrzahl von integrierten Speicherbauelementen und einer Refresh-Steuerschaltung
US20080028136A1 (en) * 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
US9171585B2 (en) 2005-06-24 2015-10-27 Google Inc. Configurable memory circuit system and method
JP4816911B2 (ja) * 2006-02-07 2011-11-16 日本電気株式会社 メモリの同期化方法及びリフレッシュ制御回路
JP2009043337A (ja) * 2007-08-08 2009-02-26 Hitachi Ltd 情報記録再生装置及びメモリ制御方法
KR101596281B1 (ko) * 2008-12-19 2016-02-22 삼성전자 주식회사 온도 관련 공유 제어회로를 갖는 반도체 메모리 장치
KR20160013624A (ko) * 2014-07-28 2016-02-05 에스케이하이닉스 주식회사 리프레쉬 회로
US10490251B2 (en) 2017-01-30 2019-11-26 Micron Technology, Inc. Apparatuses and methods for distributing row hammer refresh events across a memory device
US11017833B2 (en) 2018-05-24 2021-05-25 Micron Technology, Inc. Apparatuses and methods for pure-time, self adopt sampling for row hammer refresh sampling
US10573370B2 (en) 2018-07-02 2020-02-25 Micron Technology, Inc. Apparatus and methods for triggering row hammer address sampling
US10685696B2 (en) 2018-10-31 2020-06-16 Micron Technology, Inc. Apparatuses and methods for access based refresh timing
CN113168861A (zh) 2018-12-03 2021-07-23 美光科技公司 执行行锤刷新操作的半导体装置
CN111354393B (zh) 2018-12-21 2023-10-20 美光科技公司 用于目标刷新操作的时序交错的设备和方法
US11615831B2 (en) * 2019-02-26 2023-03-28 Micron Technology, Inc. Apparatuses and methods for memory mat refresh sequencing
US11227649B2 (en) 2019-04-04 2022-01-18 Micron Technology, Inc. Apparatuses and methods for staggered timing of targeted refresh operations
US11069393B2 (en) 2019-06-04 2021-07-20 Micron Technology, Inc. Apparatuses and methods for controlling steal rates
US10978132B2 (en) 2019-06-05 2021-04-13 Micron Technology, Inc. Apparatuses and methods for staggered timing of skipped refresh operations
US11302374B2 (en) 2019-08-23 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic refresh allocation
US11302377B2 (en) 2019-10-16 2022-04-12 Micron Technology, Inc. Apparatuses and methods for dynamic targeted refresh steals
US11309010B2 (en) 2020-08-14 2022-04-19 Micron Technology, Inc. Apparatuses, systems, and methods for memory directed access pause
US11348631B2 (en) 2020-08-19 2022-05-31 Micron Technology, Inc. Apparatuses, systems, and methods for identifying victim rows in a memory device which cannot be simultaneously refreshed
US11380382B2 (en) 2020-08-19 2022-07-05 Micron Technology, Inc. Refresh logic circuit layout having aggressor detector circuit sampling circuit and row hammer refresh control circuit
US11557331B2 (en) 2020-09-23 2023-01-17 Micron Technology, Inc. Apparatuses and methods for controlling refresh operations
US11222686B1 (en) 2020-11-12 2022-01-11 Micron Technology, Inc. Apparatuses and methods for controlling refresh timing
US11264079B1 (en) 2020-12-18 2022-03-01 Micron Technology, Inc. Apparatuses and methods for row hammer based cache lockdown

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4185323A (en) * 1978-07-20 1980-01-22 Honeywell Information Systems Inc. Dynamic memory system which includes apparatus for performing refresh operations in parallel with normal memory operations
US4249247A (en) * 1979-01-08 1981-02-03 Ncr Corporation Refresh system for dynamic RAM memory
FR2474227A1 (fr) * 1980-01-17 1981-07-24 Cii Honeywell Bull Procede de rafraichissement pour banc de memoire a circuit " mos " et sequenceur correspondant
US4357686A (en) * 1980-09-24 1982-11-02 Sperry Corporation Hidden memory refresh
US4556952A (en) * 1981-08-12 1985-12-03 International Business Machines Corporation Refresh circuit for dynamic memory of a data processor employing a direct memory access controller
US4594656A (en) * 1982-06-14 1986-06-10 Moffett Richard C Memory refresh apparatus
US4723204A (en) * 1982-07-07 1988-02-02 Gte Automatic Electric Incorporated Dynamic RAM refresh circuit
JPS59140694A (ja) * 1983-01-31 1984-08-13 Sharp Corp ダイナミツクｒａｍのリフレツシユ方法
US4625301A (en) * 1983-11-30 1986-11-25 Tandy Corporation Dynamic memory refresh circuit
US4601018A (en) * 1985-01-29 1986-07-15 Allen Baum Banked memory circuit
CA1234224A (en) * 1985-05-28 1988-03-15 Boleslav Sykora Computer memory management system
US4725987A (en) * 1985-10-23 1988-02-16 Eastman Kodak Company Architecture for a fast frame store using dynamic RAMS
US4691303A (en) * 1985-10-31 1987-09-01 Sperry Corporation Refresh system for multi-bank semiconductor memory
US4800530A (en) * 1986-08-19 1989-01-24 Kabushiki Kasiha Toshiba Semiconductor memory system with dynamic random access memory cells
US4773044A (en) * 1986-11-21 1988-09-20 Advanced Micro Devices, Inc Array-word-organized display memory and address generator with time-multiplexed address bus
JPH01211397A (ja) * 1988-02-19 1989-08-24 Nec Corp 記憶装置のリフレッシュ装置

Also Published As

Publication number Publication date
DE69127518D1 (de) 1997-10-09
EP0465050B1 (de) 1997-09-03
US5959923A (en) 1999-09-28
JPH04229487A (ja) 1992-08-18
EP0465050A1 (de) 1992-01-08

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