DE69213811D1 - Regeleinrichtung für Halbleiterlaser zur Bestimmung der Lebensdauer der Halbleiterlaser durch Feststellung des im Halbleiterlaser, beginnend vom Anfangszustand, erfolgenden Stromanstiegs - Google Patents

Regeleinrichtung für Halbleiterlaser zur Bestimmung der Lebensdauer der Halbleiterlaser durch Feststellung des im Halbleiterlaser, beginnend vom Anfangszustand, erfolgenden Stromanstiegs

Info

Publication number
DE69213811D1
DE69213811D1 DE69213811T DE69213811T DE69213811D1 DE 69213811 D1 DE69213811 D1 DE 69213811D1 DE 69213811 T DE69213811 T DE 69213811T DE 69213811 T DE69213811 T DE 69213811T DE 69213811 D1 DE69213811 D1 DE 69213811D1
Authority
DE
Germany
Prior art keywords
determining
semiconductor laser
semiconductor
starting
control device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69213811T
Other languages
English (en)
Other versions
DE69213811T2 (de
Inventor
Shinichi Sato
Hiroaki Katoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69213811D1 publication Critical patent/DE69213811D1/de
Publication of DE69213811T2 publication Critical patent/DE69213811T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/0014Measuring characteristics or properties thereof
    • H01S5/0021Degradation or life time measurements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06825Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06804Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/06808Stabilisation of laser output parameters by monitoring the electrical laser parameters, e.g. voltage or current
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/06Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068Stabilisation of laser output parameters
    • H01S5/0683Stabilisation of laser output parameters by monitoring the optical output parameters
DE69213811T 1991-05-10 1992-05-07 Regeleinrichtung für Halbleiterlaser zur Bestimmung der Lebensdauer der Halbleiterlaser durch Feststellung des im Halbleiterlaser, beginnend vom Anfangszustand, erfolgenden Stromanstiegs Expired - Fee Related DE69213811T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3105293A JP2546080B2 (ja) 1991-05-10 1991-05-10 半導体レーザー制御装置

Publications (2)

Publication Number Publication Date
DE69213811D1 true DE69213811D1 (de) 1996-10-24
DE69213811T2 DE69213811T2 (de) 1997-01-30

Family

ID=14403644

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69230734T Expired - Fee Related DE69230734T2 (de) 1991-05-10 1992-05-07 Regeleinrichtung zur Erhöhung der Lebensdauer von Halbleiterlasern durch Detektion des im Halbleiterlaser, beginnend vom Anfangszustand, erfolgenden Stromanstiegs
DE69213811T Expired - Fee Related DE69213811T2 (de) 1991-05-10 1992-05-07 Regeleinrichtung für Halbleiterlaser zur Bestimmung der Lebensdauer der Halbleiterlaser durch Feststellung des im Halbleiterlaser, beginnend vom Anfangszustand, erfolgenden Stromanstiegs

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69230734T Expired - Fee Related DE69230734T2 (de) 1991-05-10 1992-05-07 Regeleinrichtung zur Erhöhung der Lebensdauer von Halbleiterlasern durch Detektion des im Halbleiterlaser, beginnend vom Anfangszustand, erfolgenden Stromanstiegs

Country Status (5)

Country Link
US (1) US5334826A (de)
EP (2) EP0669684B1 (de)
JP (1) JP2546080B2 (de)
KR (1) KR960006211B1 (de)
DE (2) DE69230734T2 (de)

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Also Published As

Publication number Publication date
JP2546080B2 (ja) 1996-10-23
KR960006211B1 (ko) 1996-05-09
KR920022606A (ko) 1992-12-19
EP0669684B1 (de) 2000-03-01
EP0512541B1 (de) 1996-09-18
DE69230734T2 (de) 2000-06-29
EP0512541A2 (de) 1992-11-11
EP0669684A2 (de) 1995-08-30
EP0512541A3 (en) 1993-11-18
JPH04334078A (ja) 1992-11-20
DE69213811T2 (de) 1997-01-30
US5334826A (en) 1994-08-02
EP0669684A3 (de) 1996-03-13
DE69230734D1 (de) 2000-04-06

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