DE69232074D1 - Programmierbare nichtfluechtige analogs spannungsquelle: einrichtungen und verfahren - Google Patents

Programmierbare nichtfluechtige analogs spannungsquelle: einrichtungen und verfahren

Info

Publication number
DE69232074D1
DE69232074D1 DE69232074T DE69232074T DE69232074D1 DE 69232074 D1 DE69232074 D1 DE 69232074D1 DE 69232074 T DE69232074 T DE 69232074T DE 69232074 T DE69232074 T DE 69232074T DE 69232074 D1 DE69232074 D1 DE 69232074D1
Authority
DE
Germany
Prior art keywords
analogs
volatile
methods
devices
voltage source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69232074T
Other languages
English (en)
Inventor
Sakhawat Khan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Information Storage Devices Inc
Original Assignee
Information Storage Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Information Storage Devices Inc filed Critical Information Storage Devices Inc
Application granted granted Critical
Publication of DE69232074D1 publication Critical patent/DE69232074D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02—Sample-and-hold arrangements
    • G11C27/024—Sample-and-hold arrangements using a capacitive memory element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
DE69232074T 1991-11-26 1992-10-13 Programmierbare nichtfluechtige analogs spannungsquelle: einrichtungen und verfahren Expired - Lifetime DE69232074D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/798,557 US5388064A (en) 1991-11-26 1991-11-26 Programmable non-volatile analog voltage source devices and methods
PCT/US1992/008717 WO1993011541A1 (en) 1991-11-26 1992-10-13 Programmable non-volatile analog voltage source devices and methods

Publications (1)

Publication Number Publication Date
DE69232074D1 true DE69232074D1 (de) 2001-10-25

Family

ID=25173705

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232074T Expired - Lifetime DE69232074D1 (de) 1991-11-26 1992-10-13 Programmierbare nichtfluechtige analogs spannungsquelle: einrichtungen und verfahren

Country Status (7)

Country Link
US (1) US5388064A (de)
EP (1) EP0614568B1 (de)
JP (1) JP3371140B2 (de)
KR (1) KR0155585B1 (de)
DE (1) DE69232074D1 (de)
SG (1) SG46407A1 (de)
WO (1) WO1993011541A1 (de)

Families Citing this family (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO933103L (no) * 1993-08-31 1995-03-01 Tor Sverre Lande Analog, UV-lysprogrammerbar spenningsreferanse i CMOS-teknologi
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5664060A (en) * 1994-01-25 1997-09-02 Information Storage Devices Message management methods and apparatus
KR100287979B1 (ko) * 1994-06-02 2001-05-02 피터 엔. 데트킨 멀티레벨 셀을 가진 플래시 메모리의 감지 방법 및 회로
US5629890A (en) * 1994-09-14 1997-05-13 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
US5590104A (en) * 1994-09-30 1996-12-31 Martin Marietta Energy Systems, Inc. Method of pedestal and common-mode noise correction for switched-capacitor analog memories
US5631606A (en) * 1995-08-01 1997-05-20 Information Storage Devices, Inc. Fully differential output CMOS power amplifier
US5687114A (en) 1995-10-06 1997-11-11 Agate Semiconductor, Inc. Integrated circuit for storage and retrieval of multiple digital bits per nonvolatile memory cell
US5677869A (en) * 1995-12-14 1997-10-14 Intel Corporation Programming flash memory using strict ordering of states
US5737265A (en) * 1995-12-14 1998-04-07 Intel Corporation Programming flash memory using data stream analysis
US5729489A (en) * 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
US5701266A (en) * 1995-12-14 1997-12-23 Intel Corporation Programming flash memory using distributed learning methods
US5726934A (en) * 1996-04-09 1998-03-10 Information Storage Devices, Inc. Method and apparatus for analog reading values stored in floating gate structures
DE69635660D1 (de) * 1996-09-30 2006-02-02 St Microelectronics Srl Programmierbare Referenzspannungsquelle, insbesondere für Analogspeicher
US5808506A (en) * 1996-10-01 1998-09-15 Information Storage Devices, Inc. MOS charge pump generation and regulation method and apparatus
KR100218273B1 (ko) * 1996-11-20 1999-09-01 윤종용 이이피롬(eeprom)의 아날로그 신호 다중 레벨 녹음및 재생 시스템
US5870335A (en) 1997-03-06 1999-02-09 Agate Semiconductor, Inc. Precision programming of nonvolatile memory cells
US6487116B2 (en) 1997-03-06 2002-11-26 Silicon Storage Technology, Inc. Precision programming of nonvolatile memory cells
US5828592A (en) * 1997-03-12 1998-10-27 Information Storage Devices, Inc. Analog signal recording and playback integrated circuit and message management system
US5859803A (en) * 1997-09-08 1999-01-12 Information Storage Devices, Inc. Non-volatile circuit that disables failed devices
US5959883A (en) * 1998-01-09 1999-09-28 Information Storage Devices, Inc. Recording and playback integrated system for analog non-volatile flash memory
US6208542B1 (en) 1998-06-30 2001-03-27 Sandisk Corporation Techniques for storing digital data in an analog or multilevel memory
US6282145B1 (en) * 1999-01-14 2001-08-28 Silicon Storage Technology, Inc. Array architecture and operating methods for digital multilevel nonvolatile memory integrated circuit system
US6347136B1 (en) * 1999-07-15 2002-02-12 Winbond Electronics Corporation Calling party announcement message management systems and methods
US6396742B1 (en) 2000-07-28 2002-05-28 Silicon Storage Technology, Inc. Testing of multilevel semiconductor memory
US8149048B1 (en) 2000-10-26 2012-04-03 Cypress Semiconductor Corporation Apparatus and method for programmable power management in a programmable analog circuit block
WO2007132452A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Reducing programming error in memory devices
CN103258572B (zh) 2006-05-12 2016-12-07 苹果公司 存储设备中的失真估计和消除
WO2007132457A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Combined distortion estimation and error correction coding for memory devices
WO2007132456A2 (en) * 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
US8060806B2 (en) 2006-08-27 2011-11-15 Anobit Technologies Ltd. Estimation of non-linear distortion in memory devices
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) * 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7593263B2 (en) * 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US7900102B2 (en) * 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US8151166B2 (en) * 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) * 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
CN101715595A (zh) * 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
US8001320B2 (en) * 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US8234545B2 (en) * 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) * 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
US8068360B2 (en) * 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
WO2009050703A2 (en) * 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
WO2009063450A2 (en) * 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US8209588B2 (en) * 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) * 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) * 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) * 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) * 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US8059457B2 (en) * 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US7969235B2 (en) * 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US7995388B1 (en) 2008-08-05 2011-08-09 Anobit Technologies Ltd. Data storage using modified voltages
US7924613B1 (en) * 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) * 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) * 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US8832354B2 (en) * 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US20110148509A1 (en) * 2009-12-17 2011-06-23 Feng Pan Techniques to Reduce Charge Pump Overshoot
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8572311B1 (en) 2010-01-11 2013-10-29 Apple Inc. Redundant data storage in multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8767459B1 (en) 2010-07-31 2014-07-01 Apple Inc. Data storage in analog memory cells across word lines using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8493781B1 (en) 2010-08-12 2013-07-23 Apple Inc. Interference mitigation using individual word line erasure operations
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4910706A (en) * 1972-09-11 1990-03-20 Hyatt Gilbert P Analog memory for storing digital information
US4271488A (en) * 1979-04-13 1981-06-02 Tektronix, Inc. High-speed acquisition system employing an analog memory matrix
JPS55143652A (en) * 1979-04-25 1980-11-10 Hitachi Ltd Series-parallel signal converter
US4627027A (en) * 1982-09-01 1986-12-02 Sanyo Electric Co., Ltd. Analog storing and reproducing apparatus utilizing non-volatile memory elements
EP0108681A3 (de) * 1982-11-04 1986-10-15 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Bit-löschbarer EEPROM
JPS59106152A (ja) * 1982-12-10 1984-06-19 Nec Corp 半導体装置
US4718039A (en) * 1984-06-29 1988-01-05 International Business Machines Intermediate memory array with a parallel port and a buffered serial port
JPS63244393A (ja) * 1987-03-30 1988-10-11 Nec Corp 並列入出力回路を有する記憶装置
US4809223A (en) * 1987-06-18 1989-02-28 West Virginia University Apparatus and method for long term storage of analog signals
US5034922A (en) * 1987-12-21 1991-07-23 Motorola, Inc. Intelligent electrically erasable, programmable read-only memory with improved read latency
US4890259A (en) * 1988-07-13 1989-12-26 Information Storage Devices High density integrated circuit analog signal recording and playback system
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
US5146577A (en) * 1989-04-10 1992-09-08 Motorola, Inc. Serial data circuit with randomly-accessed registers of different bit length
US5126967A (en) * 1990-09-26 1992-06-30 Information Storage Devices, Inc. Writable distributed non-volatile analog reference system and method for analog signal recording and playback

Also Published As

Publication number Publication date
US5388064A (en) 1995-02-07
WO1993011541A1 (en) 1993-06-10
EP0614568A4 (de) 1995-01-18
SG46407A1 (en) 1998-02-20
JPH07504051A (ja) 1995-04-27
JP3371140B2 (ja) 2003-01-27
KR0155585B1 (ko) 1998-12-01
EP0614568A1 (de) 1994-09-14
EP0614568B1 (de) 2001-09-19

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