DE69327600T2 - Herstellungsverfahren von Submikronkontakten - Google Patents
Herstellungsverfahren von SubmikronkontaktenInfo
- Publication number
- DE69327600T2 DE69327600T2 DE69327600T DE69327600T DE69327600T2 DE 69327600 T2 DE69327600 T2 DE 69327600T2 DE 69327600 T DE69327600 T DE 69327600T DE 69327600 T DE69327600 T DE 69327600T DE 69327600 T2 DE69327600 T2 DE 69327600T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing process
- submicron
- contacts
- submicron contacts
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
- H01L21/76844—Bottomless liners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US84382292A | 1992-02-28 | 1992-02-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69327600D1 DE69327600D1 (de) | 2000-02-24 |
DE69327600T2 true DE69327600T2 (de) | 2000-06-21 |
Family
ID=25291102
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69327600T Expired - Fee Related DE69327600T2 (de) | 1992-02-28 | 1993-02-24 | Herstellungsverfahren von Submikronkontakten |
Country Status (4)
Country | Link |
---|---|
US (2) | US5523624A (de) |
EP (1) | EP0558304B1 (de) |
JP (1) | JP3481965B2 (de) |
DE (1) | DE69327600T2 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5563089A (en) * | 1994-07-20 | 1996-10-08 | Micron Technology, Inc. | Method of forming a bit line over capacitor array of memory cells and an array of bit line over capacitor array of memory cells |
US6791131B1 (en) * | 1993-04-02 | 2004-09-14 | Micron Technology, Inc. | Method for forming a storage cell capacitor compatible with high dielectric constant materials |
US5527736A (en) * | 1995-04-03 | 1996-06-18 | Taiwan Semiconductor Manufacturing Co. | Dimple-free tungsten etching back process |
US5639691A (en) * | 1995-06-05 | 1997-06-17 | Advanced Micro Devices, Inc. | Copper pellet for reducing electromigration effects associated with a conductive via in a semiconductor device |
US5747379A (en) * | 1996-01-11 | 1998-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating seamless tungsten plug employing tungsten redeposition and etch back |
US5756396A (en) * | 1996-05-06 | 1998-05-26 | Taiwan Semiconductor Manufacturing Company Ltd | Method of making a multi-layer wiring structure having conductive sidewall etch stoppers and a stacked plug interconnect |
JPH10214895A (ja) * | 1997-01-31 | 1998-08-11 | Nec Corp | 配線構造及びその製造方法 |
US6150691A (en) * | 1997-12-19 | 2000-11-21 | Micron Technology, Inc. | Spacer patterned, high dielectric constant capacitor |
US6075293A (en) * | 1999-03-05 | 2000-06-13 | Advanced Micro Devices, Inc. | Semiconductor device having a multi-layer metal interconnect structure |
US6245629B1 (en) * | 1999-03-25 | 2001-06-12 | Infineon Technologies North America Corp. | Semiconductor structures and manufacturing methods |
JP2003086669A (ja) * | 2001-09-10 | 2003-03-20 | Mitsubishi Electric Corp | 電子装置およびその製造方法 |
KR100480632B1 (ko) * | 2002-11-16 | 2005-03-31 | 삼성전자주식회사 | 반도체 소자의 금속 배선 형성 방법 |
US7316962B2 (en) * | 2005-01-07 | 2008-01-08 | Infineon Technologies Ag | High dielectric constant materials |
US20060151822A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | DRAM with high K dielectric storage capacitor and method of making the same |
US20060151845A1 (en) * | 2005-01-07 | 2006-07-13 | Shrinivas Govindarajan | Method to control interfacial properties for capacitors using a metal flash layer |
JP2009135219A (ja) | 2007-11-29 | 2009-06-18 | Renesas Technology Corp | 半導体装置およびその製造方法 |
JP5343982B2 (ja) * | 2009-02-16 | 2013-11-13 | トヨタ自動車株式会社 | 半導体装置 |
CN102299177B (zh) * | 2010-06-22 | 2014-12-10 | 中国科学院微电子研究所 | 一种接触的制造方法以及具有该接触的半导体器件 |
JP6247551B2 (ja) * | 2014-01-29 | 2017-12-13 | 新日本無線株式会社 | 半導体装置 |
KR102290538B1 (ko) | 2015-04-16 | 2021-08-19 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0196142A (ja) * | 1981-03-02 | 1989-04-14 | Wako Pure Chem Ind Ltd | 脂肪族ヨウ化物の製法 |
US4630357A (en) * | 1985-08-02 | 1986-12-23 | Ncr Corporation | Method for forming improved contacts between interconnect layers of an integrated circuit |
JPS62102559A (ja) * | 1985-10-29 | 1987-05-13 | Mitsubishi Electric Corp | 半導体装置及び製造方法 |
US5084413A (en) * | 1986-04-15 | 1992-01-28 | Matsushita Electric Industrial Co., Ltd. | Method for filling contact hole |
KR900003618B1 (ko) * | 1986-05-30 | 1990-05-26 | 후지쓰가부시끼가이샤 | 반도체장치 및 그 제조방법 |
US4782380A (en) * | 1987-01-22 | 1988-11-01 | Advanced Micro Devices, Inc. | Multilayer interconnection for integrated circuit structure having two or more conductive metal layers |
US4884123A (en) * | 1987-02-19 | 1989-11-28 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
US4960732A (en) * | 1987-02-19 | 1990-10-02 | Advanced Micro Devices, Inc. | Contact plug and interconnect employing a barrier lining and a backfilled conductor material |
JPS63299251A (ja) * | 1987-05-29 | 1988-12-06 | Toshiba Corp | 半導体装置の製造方法 |
US4994410A (en) * | 1988-04-04 | 1991-02-19 | Motorola, Inc. | Method for device metallization by forming a contact plug and interconnect using a silicide/nitride process |
JPH01270347A (ja) * | 1988-04-22 | 1989-10-27 | Sony Corp | 半導体装置 |
JPH0666287B2 (ja) * | 1988-07-25 | 1994-08-24 | 富士通株式会社 | 半導体装置の製造方法 |
DE3915337A1 (de) * | 1989-05-10 | 1990-11-15 | Siemens Ag | Verfahren zum herstellen einer niederohmigen planen kontaktmetallisierung fuer hochintegrierte halbleiterschaltungen |
US5108951A (en) * | 1990-11-05 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Method for forming a metal contact |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
JPH03201482A (ja) * | 1989-12-28 | 1991-09-03 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
US4987099A (en) * | 1989-12-29 | 1991-01-22 | North American Philips Corp. | Method for selectively filling contacts or vias or various depths with CVD tungsten |
US5066612A (en) * | 1990-01-05 | 1991-11-19 | Fujitsu Limited | Method of forming wiring of a semiconductor device |
JPH0680638B2 (ja) * | 1990-07-05 | 1994-10-12 | 株式会社東芝 | 半導体装置の製造方法 |
US5475266A (en) * | 1992-02-24 | 1995-12-12 | Texas Instruments Incorporated | Structure for microelectronic device incorporating low resistivity straps between conductive regions |
US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
-
1993
- 1993-02-24 EP EP93301381A patent/EP0558304B1/de not_active Expired - Lifetime
- 1993-02-24 DE DE69327600T patent/DE69327600T2/de not_active Expired - Fee Related
- 1993-03-01 JP JP03916293A patent/JP3481965B2/ja not_active Expired - Fee Related
- 1993-08-26 US US08/112,863 patent/US5523624A/en not_active Expired - Lifetime
-
1995
- 1995-05-03 US US08/434,371 patent/US5582971A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5582971A (en) | 1996-12-10 |
DE69327600D1 (de) | 2000-02-24 |
EP0558304A3 (en) | 1994-05-18 |
EP0558304A2 (de) | 1993-09-01 |
US5523624A (en) | 1996-06-04 |
JP3481965B2 (ja) | 2003-12-22 |
EP0558304B1 (de) | 2000-01-19 |
JPH0620986A (ja) | 1994-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |