DE69333359D1 - Herstellungsverfahren einer EEPROM-Zellen-Matrix - Google Patents

Herstellungsverfahren einer EEPROM-Zellen-Matrix

Info

Publication number
DE69333359D1
DE69333359D1 DE69333359T DE69333359T DE69333359D1 DE 69333359 D1 DE69333359 D1 DE 69333359D1 DE 69333359 T DE69333359 T DE 69333359T DE 69333359 T DE69333359 T DE 69333359T DE 69333359 D1 DE69333359 D1 DE 69333359D1
Authority
DE
Germany
Prior art keywords
manufacturing process
cell matrix
eeprom cell
eeprom
matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69333359T
Other languages
English (en)
Other versions
DE69333359T2 (de
Inventor
Albert Bergemont
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE69333359D1 publication Critical patent/DE69333359D1/de
Application granted granted Critical
Publication of DE69333359T2 publication Critical patent/DE69333359T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/972—Stored charge erasure
DE69333359T 1992-06-01 1993-05-18 Herstellungsverfahren einer EEPROM-Zellen-Matrix Expired - Lifetime DE69333359T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/891,705 US5379253A (en) 1992-06-01 1992-06-01 High density EEPROM cell array with novel programming scheme and method of manufacture
US891705 1992-06-01

Publications (2)

Publication Number Publication Date
DE69333359D1 true DE69333359D1 (de) 2004-01-29
DE69333359T2 DE69333359T2 (de) 2004-10-14

Family

ID=25398680

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69333359T Expired - Lifetime DE69333359T2 (de) 1992-06-01 1993-05-18 Herstellungsverfahren einer EEPROM-Zellen-Matrix

Country Status (6)

Country Link
US (4) US5379253A (de)
EP (1) EP0573170B1 (de)
JP (1) JPH0685282A (de)
KR (1) KR100316086B1 (de)
DE (1) DE69333359T2 (de)
TW (1) TW225043B (de)

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Also Published As

Publication number Publication date
US5379253A (en) 1995-01-03
JPH0685282A (ja) 1994-03-25
US5402372A (en) 1995-03-28
KR100316086B1 (ko) 2002-03-21
EP0573170A1 (de) 1993-12-08
US5453393A (en) 1995-09-26
KR940001425A (ko) 1994-01-11
US5455790A (en) 1995-10-03
DE69333359T2 (de) 2004-10-14
TW225043B (de) 1994-06-11
EP0573170B1 (de) 2003-12-17

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