DE69416749D1 - Trockenreinigung von Halbleiterverarbeitungskammern - Google Patents
Trockenreinigung von HalbleiterverarbeitungskammernInfo
- Publication number
- DE69416749D1 DE69416749D1 DE69416749T DE69416749T DE69416749D1 DE 69416749 D1 DE69416749 D1 DE 69416749D1 DE 69416749 T DE69416749 T DE 69416749T DE 69416749 T DE69416749 T DE 69416749T DE 69416749 D1 DE69416749 D1 DE 69416749D1
- Authority
- DE
- Germany
- Prior art keywords
- dry cleaning
- process chamber
- plasma
- reactive
- species
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Optics & Photonics (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/104,318 US5486235A (en) | 1993-08-09 | 1993-08-09 | Plasma dry cleaning of semiconductor processing chambers |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69416749D1 true DE69416749D1 (de) | 1999-04-08 |
DE69416749T2 DE69416749T2 (de) | 1999-07-01 |
Family
ID=22299851
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69416749T Expired - Fee Related DE69416749T2 (de) | 1993-08-09 | 1994-06-10 | Trockenreinigung von Halbleiterverarbeitungskammern |
Country Status (6)
Country | Link |
---|---|
US (4) | US5486235A (de) |
EP (2) | EP0786537A1 (de) |
JP (1) | JPH07153751A (de) |
KR (2) | KR100348329B1 (de) |
AT (1) | ATE177161T1 (de) |
DE (1) | DE69416749T2 (de) |
Families Citing this family (73)
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US5841651A (en) * | 1992-11-09 | 1998-11-24 | The United States Of America As Represented By The United States Department Of Energy | Closed loop adaptive control of spectrum-producing step using neural networks |
JP3247270B2 (ja) * | 1994-08-25 | 2002-01-15 | 東京エレクトロン株式会社 | 処理装置及びドライクリーニング方法 |
JPH08319586A (ja) * | 1995-05-24 | 1996-12-03 | Nec Yamagata Ltd | 真空処理装置のクリーニング方法 |
US6554910B1 (en) | 1996-05-17 | 2003-04-29 | Micron Technology, Inc. | Method for treating residues in semiconductor processing chambers |
US5753566A (en) * | 1996-05-23 | 1998-05-19 | Taiwan Semiconductor Manufactured Company, Ltd. | Method of spin-on-glass etchback using hot backside helium |
US6626185B2 (en) | 1996-06-28 | 2003-09-30 | Lam Research Corporation | Method of depositing a silicon containing layer on a semiconductor substrate |
US6347636B1 (en) * | 1996-11-13 | 2002-02-19 | Applied Materials, Inc. | Methods and apparatus for gettering fluorine from chamber material surfaces |
US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
US5712702A (en) * | 1996-12-06 | 1998-01-27 | International Business Machines Corporation | Method and apparatus for determining chamber cleaning end point |
US5869401A (en) * | 1996-12-20 | 1999-02-09 | Lam Research Corporation | Plasma-enhanced flash process |
US5849092A (en) * | 1997-02-25 | 1998-12-15 | Applied Materials, Inc. | Process for chlorine trifluoride chamber cleaning |
JP3594759B2 (ja) * | 1997-03-19 | 2004-12-02 | 株式会社日立製作所 | プラズマ処理方法 |
JP3801730B2 (ja) | 1997-05-09 | 2006-07-26 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及びそれを用いた薄膜形成方法 |
US5994662A (en) * | 1997-05-29 | 1999-11-30 | Applied Materials, Inc. | Unique baffle to deflect remote plasma clean gases |
TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
KR100253089B1 (ko) * | 1997-10-29 | 2000-05-01 | 윤종용 | 반도체소자 제조용 화학기상증착장치 및 이의 구동방법, 그 공정챔버 세정공정 레시피 최적화방법 |
US6576547B2 (en) | 1998-03-05 | 2003-06-10 | Micron Technology, Inc. | Residue-free contact openings and methods for fabricating same |
US6360754B2 (en) | 1998-03-16 | 2002-03-26 | Vlsi Technology, Inc. | Method of protecting quartz hardware from etching during plasma-enhanced cleaning of a semiconductor processing chamber |
US6232219B1 (en) | 1998-05-20 | 2001-05-15 | Micron Technology, Inc. | Self-limiting method of reducing contamination in a contact opening, method of making contacts and semiconductor devices therewith, and resulting structures |
US6014979A (en) * | 1998-06-22 | 2000-01-18 | Applied Materials, Inc. | Localizing cleaning plasma for semiconductor processing |
US6467490B1 (en) * | 1998-08-31 | 2002-10-22 | Texas Instruments Incorporated | Process for using a high nitrogen concentration plasma for fluorine removal from a reactor |
US6674158B2 (en) | 1998-09-03 | 2004-01-06 | Micron Technology, Inc. | Semiconductor die package having a UV cured polymeric die coating |
US6186154B1 (en) | 1998-12-07 | 2001-02-13 | Taiwan Semiconductor Manufacturing Company | Find end point of CLF3 clean by pressure change |
US6254689B1 (en) | 1999-03-09 | 2001-07-03 | Lucent Technologies Inc. | System and method for flash photolysis cleaning of a semiconductor processing chamber |
US6374833B1 (en) * | 1999-05-05 | 2002-04-23 | Mosel Vitelic, Inc. | Method of in situ reactive gas plasma treatment |
US6259105B1 (en) * | 1999-05-10 | 2001-07-10 | Axcelis Technologies, Inc. | System and method for cleaning silicon-coated surfaces in an ion implanter |
FI113750B (fi) | 1999-05-21 | 2004-06-15 | Kojair Tech Oy | Menetelmä ja laitteisto puolijohdeteollisuuden työvälineiden pesemiseksi |
TW451351B (en) * | 2000-01-31 | 2001-08-21 | Mosel Vitelic Inc | Method of removing the polymer byproduct accumulated on the bottom electrode of the etch reaction chamber |
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US6190062B1 (en) | 2000-04-26 | 2001-02-20 | Advanced Micro Devices, Inc. | Cleaning chamber built into SEM for plasma or gaseous phase cleaning |
DE10045793C2 (de) | 2000-09-15 | 2002-07-18 | Zeiss Carl | Verfahren zum Strukturieren eines Substrats |
US6843258B2 (en) * | 2000-12-19 | 2005-01-18 | Applied Materials, Inc. | On-site cleaning gas generation for process chamber cleaning |
US6805952B2 (en) | 2000-12-29 | 2004-10-19 | Lam Research Corporation | Low contamination plasma chamber components and methods for making the same |
US6770214B2 (en) | 2001-03-30 | 2004-08-03 | Lam Research Corporation | Method of reducing aluminum fluoride deposits in plasma etch reactor |
JP2002334866A (ja) * | 2001-05-09 | 2002-11-22 | Tokyo Electron Ltd | 被覆剤及びそれを施した耐プラズマ性部品 |
JP2003068705A (ja) * | 2001-08-23 | 2003-03-07 | Hitachi Ltd | 半導体素子の製造方法 |
US20030062064A1 (en) * | 2001-09-28 | 2003-04-03 | Infineon Technologies North America Corp. | Method of removing PECVD residues of fluorinated plasma using in-situ H2 plasma |
US20040037768A1 (en) * | 2001-11-26 | 2004-02-26 | Robert Jackson | Method and system for on-site generation and distribution of a process gas |
US20040151656A1 (en) * | 2001-11-26 | 2004-08-05 | Siegele Stephen H. | Modular molecular halogen gas generation system |
KR100879325B1 (ko) * | 2002-03-11 | 2009-01-19 | 가부시키가이샤 히다치 하이테크놀로지즈 | 플라즈마처리방법 및 처리장치 |
US20030172953A1 (en) * | 2002-03-14 | 2003-09-18 | Koji Teranishi | Method of treating inner wall of apparatus |
US6814814B2 (en) * | 2002-03-29 | 2004-11-09 | Applied Materials, Inc. | Cleaning residues from surfaces in a chamber by sputtering sacrificial substrates |
US20040011380A1 (en) * | 2002-07-18 | 2004-01-22 | Bing Ji | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
FR2847713B1 (fr) * | 2002-11-21 | 2005-03-18 | Cit Alcatel | Dispositif et procede de nettoyage des chambres de procedes et lignes de vide |
US7371688B2 (en) * | 2003-09-30 | 2008-05-13 | Air Products And Chemicals, Inc. | Removal of transition metal ternary and/or quaternary barrier materials from a substrate |
US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
US20080073559A1 (en) * | 2003-12-12 | 2008-03-27 | Horsky Thomas N | Controlling the flow of vapors sublimated from solids |
EP1695038B1 (de) * | 2003-12-12 | 2013-02-13 | Semequip, Inc. | Steuerung des flusses von aus feststoffen sublimierten dämpfen |
US7267842B2 (en) | 2004-03-15 | 2007-09-11 | Air Products And Chemicals, Inc. | Method for removing titanium dioxide deposits from a reactor |
US7879409B2 (en) * | 2004-07-23 | 2011-02-01 | Applied Materials, Inc. | Repeatability of CVD film deposition during sequential processing of substrates in a deposition chamber |
US8486198B2 (en) * | 2005-08-04 | 2013-07-16 | Aviza Technology Limited | Method of processing substrates |
KR100676206B1 (ko) * | 2005-11-14 | 2007-01-30 | 삼성전자주식회사 | 반도체 디바이스 제조설비에서의 프로세스 챔버 세정 방법 |
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US20090149008A1 (en) * | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
US8118946B2 (en) | 2007-11-30 | 2012-02-21 | Wesley George Lau | Cleaning process residues from substrate processing chamber components |
WO2010124261A2 (en) * | 2009-04-24 | 2010-10-28 | Applied Materials, Inc. | Substrate pretreatment for subsequent high temperature group iii depositions |
JP5698950B2 (ja) | 2009-10-23 | 2015-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
NL2005739A (en) * | 2009-12-22 | 2011-06-23 | Asml Netherlands Bv | Object with an improved suitability for a plasma cleaning treatment. |
US8895116B2 (en) | 2010-11-04 | 2014-11-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of crystalline semiconductor film and manufacturing method of semiconductor device |
TW201247334A (en) * | 2011-05-18 | 2012-12-01 | Auria Solar Co Ltd | Method for cleaning deposition chamber |
US9478408B2 (en) | 2014-06-06 | 2016-10-25 | Lam Research Corporation | Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging |
US10047438B2 (en) | 2014-06-10 | 2018-08-14 | Lam Research Corporation | Defect control and stability of DC bias in RF plasma-based substrate processing systems using molecular reactive purge gas |
US10081869B2 (en) | 2014-06-10 | 2018-09-25 | Lam Research Corporation | Defect control in RF plasma substrate processing systems using DC bias voltage during movement of substrates |
US10008396B2 (en) * | 2014-10-06 | 2018-06-26 | Lam Research Corporation | Method for collapse-free drying of high aspect ratio structures |
US10636661B2 (en) * | 2016-01-15 | 2020-04-28 | Taiwan Semiconductor Manufacturing Company Ltd. | Apparatus and method for wafer bonding |
JP6851217B2 (ja) * | 2017-02-16 | 2021-03-31 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
RU2669864C1 (ru) * | 2017-08-03 | 2018-10-16 | Российская Федерация, от имени которой выступает Государственная корпорация по атомной энергии "Росатом" | Способ удаления перенапылённых углеводородных слоёв |
US10766057B2 (en) | 2017-12-28 | 2020-09-08 | Micron Technology, Inc. | Components and systems for cleaning a tool for forming a semiconductor device, and related methods |
DE102018220677A1 (de) * | 2018-11-30 | 2020-06-04 | Siemens Aktiengesellschaft | Vorrichtung zum Beschichten eines Bauelements sowie Reinigungseinrichtung und Verfahren zum Reinigen einer Beschichtungseinrichtung zum Beschichten wenigstens eines Bauelements |
JP7374058B2 (ja) * | 2020-09-18 | 2023-11-06 | 東京エレクトロン株式会社 | エッチング方法及びプラズマ処理装置 |
CN115354298A (zh) * | 2022-07-05 | 2022-11-18 | 湖南红太阳光电科技有限公司 | 一种pecvd设备石墨舟清洗系统 |
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JPS59142839A (ja) * | 1983-02-01 | 1984-08-16 | Canon Inc | 気相法装置のクリ−ニング方法 |
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JPH0834205B2 (ja) * | 1986-11-21 | 1996-03-29 | 株式会社東芝 | ドライエツチング装置 |
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JPS63210275A (ja) * | 1987-02-24 | 1988-08-31 | Semiconductor Energy Lab Co Ltd | プラズマ反応装置内を清浄にする方法 |
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-
1993
- 1993-08-09 US US08/104,318 patent/US5486235A/en not_active Expired - Fee Related
-
1994
- 1994-06-10 EP EP97104243A patent/EP0786537A1/de not_active Ceased
- 1994-06-10 EP EP94304196A patent/EP0638660B1/de not_active Expired - Lifetime
- 1994-06-10 AT AT94304196T patent/ATE177161T1/de not_active IP Right Cessation
- 1994-06-10 DE DE69416749T patent/DE69416749T2/de not_active Expired - Fee Related
- 1994-08-08 JP JP6185785A patent/JPH07153751A/ja not_active Withdrawn
- 1994-08-09 KR KR1019940019563A patent/KR100348329B1/ko not_active IP Right Cessation
-
1995
- 1995-05-17 US US08/442,939 patent/US5676759A/en not_active Expired - Lifetime
- 1995-07-07 US US08/499,157 patent/US5685916A/en not_active Expired - Lifetime
-
1997
- 1997-01-21 US US08/786,406 patent/US5753137A/en not_active Expired - Lifetime
-
2001
- 2001-11-27 KR KR1020010074195A patent/KR100336914B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP0638660A2 (de) | 1995-02-15 |
DE69416749T2 (de) | 1999-07-01 |
KR100348329B1 (ko) | 2002-12-02 |
EP0786537A1 (de) | 1997-07-30 |
EP0638660B1 (de) | 1999-03-03 |
ATE177161T1 (de) | 1999-03-15 |
US5676759A (en) | 1997-10-14 |
JPH07153751A (ja) | 1995-06-16 |
KR100336914B1 (ko) | 2002-05-16 |
EP0638660A3 (de) | 1995-09-13 |
US5486235A (en) | 1996-01-23 |
KR950007013A (ko) | 1995-03-21 |
US5685916A (en) | 1997-11-11 |
US5753137A (en) | 1998-05-19 |
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