DE69432452D1 - Programmierte Referenz - Google Patents

Programmierte Referenz

Info

Publication number
DE69432452D1
DE69432452D1 DE69432452T DE69432452T DE69432452D1 DE 69432452 D1 DE69432452 D1 DE 69432452D1 DE 69432452 T DE69432452 T DE 69432452T DE 69432452 T DE69432452 T DE 69432452T DE 69432452 D1 DE69432452 D1 DE 69432452D1
Authority
DE
Germany
Prior art keywords
programmed reference
programmed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69432452T
Other languages
English (en)
Other versions
DE69432452T2 (de
Inventor
Shane C Hollmer
Lee E Cleveland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22577486&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69432452(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69432452D1 publication Critical patent/DE69432452D1/de
Publication of DE69432452T2 publication Critical patent/DE69432452T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
DE69432452T 1993-12-01 1994-11-10 Programmierte Referenz Expired - Fee Related DE69432452T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/160,582 US5828601A (en) 1993-12-01 1993-12-01 Programmed reference
US160582 1993-12-01

Publications (2)

Publication Number Publication Date
DE69432452D1 true DE69432452D1 (de) 2003-05-15
DE69432452T2 DE69432452T2 (de) 2004-03-11

Family

ID=22577486

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69432452T Expired - Fee Related DE69432452T2 (de) 1993-12-01 1994-11-10 Programmierte Referenz

Country Status (6)

Country Link
US (1) US5828601A (de)
EP (1) EP0656628B1 (de)
JP (2) JP3813640B2 (de)
KR (1) KR100357444B1 (de)
DE (1) DE69432452T2 (de)
TW (1) TW302479B (de)

Families Citing this family (70)

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DE69033438T2 (de) * 1989-04-13 2000-07-06 Sandisk Corp Austausch von fehlerhaften Speicherzellen einer EEprommatritze
US6222762B1 (en) * 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US7071060B1 (en) 1996-02-28 2006-07-04 Sandisk Corporation EEPROM with split gate source side infection with sidewall spacers
JP3336813B2 (ja) * 1995-02-01 2002-10-21 ソニー株式会社 不揮発性半導体メモリ装置
FR2745114B1 (fr) * 1996-02-20 1998-04-17 Sgs Thomson Microelectronics Memoire non volatile multiniveau modifiable electriquement avec rafraichissement autonome
IL125604A (en) 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
KR100339023B1 (ko) 1998-03-28 2002-09-18 주식회사 하이닉스반도체 문턱전압을조절할수있는플래쉬메모리장치의센싱회로
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KR100295361B1 (ko) * 1998-12-30 2001-07-12 윤종용 불 휘발성 반도체 메모리 장치
FR2794277B1 (fr) * 1999-05-25 2001-08-10 St Microelectronics Sa Memoire morte a faible consommation
US6215702B1 (en) 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
JP3776307B2 (ja) * 2000-04-26 2006-05-17 沖電気工業株式会社 不揮発性メモリアナログ電圧書き込み回路
US6396741B1 (en) 2000-05-04 2002-05-28 Saifun Semiconductors Ltd. Programming of nonvolatile memory cells
US6490204B2 (en) * 2000-05-04 2002-12-03 Saifun Semiconductors Ltd. Programming and erasing methods for a reference cell of an NROM array
US6538922B1 (en) * 2000-09-27 2003-03-25 Sandisk Corporation Writable tracking cells
US6449190B1 (en) * 2001-01-17 2002-09-10 Advanced Micro Devices, Inc. Adaptive reference cells for a memory device
US6538923B1 (en) * 2001-02-26 2003-03-25 Advanced Micro Devices, Inc. Staircase program verify for multi-level cell flash memory designs
US6466480B2 (en) * 2001-03-27 2002-10-15 Micron Technology, Inc. Method and apparatus for trimming non-volatile memory cells
IL148960A (en) * 2001-04-05 2005-09-25 Saifun Semiconductors Ltd Method for programming a reference cell
US6584017B2 (en) * 2001-04-05 2003-06-24 Saifun Semiconductors Ltd. Method for programming a reference cell
TW504702B (en) * 2001-04-13 2002-10-01 Amic Technology Corp Circuit and method for correcting overerased flash memory cells
US6643169B2 (en) * 2001-09-18 2003-11-04 Intel Corporation Variable level memory
US6678192B2 (en) 2001-11-02 2004-01-13 Sandisk Corporation Error management for writable tracking storage units
DE60134870D1 (de) * 2001-12-28 2008-08-28 St Microelectronics Srl Programmierverfahren für eine Multibitspeicherzelle
US6975536B2 (en) * 2002-01-31 2005-12-13 Saifun Semiconductors Ltd. Mass storage array and methods for operation thereof
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
US6826107B2 (en) 2002-08-01 2004-11-30 Saifun Semiconductors Ltd. High voltage insertion in flash memory cards
US6992932B2 (en) 2002-10-29 2006-01-31 Saifun Semiconductors Ltd Method circuit and system for read error detection in a non-volatile memory array
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US6963505B2 (en) * 2002-10-29 2005-11-08 Aifun Semiconductors Ltd. Method circuit and system for determining a reference voltage
US6967896B2 (en) 2003-01-30 2005-11-22 Saifun Semiconductors Ltd Address scramble
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
US7142464B2 (en) * 2003-04-29 2006-11-28 Saifun Semiconductors Ltd. Apparatus and methods for multi-level sensing in a memory array
US7237074B2 (en) * 2003-06-13 2007-06-26 Sandisk Corporation Tracking cells for a memory system
US7123532B2 (en) 2003-09-16 2006-10-17 Saifun Semiconductors Ltd. Operating array cells with matched reference cells
US6954393B2 (en) * 2003-09-16 2005-10-11 Saifun Semiconductors Ltd. Reading array cell with matched reference cell
US7301807B2 (en) 2003-10-23 2007-11-27 Sandisk Corporation Writable tracking cells
WO2005094178A2 (en) 2004-04-01 2005-10-13 Saifun Semiconductors Ltd. Method, circuit and systems for erasing one or more non-volatile memory cells
US7755938B2 (en) * 2004-04-19 2010-07-13 Saifun Semiconductors Ltd. Method for reading a memory array with neighbor effect cancellation
US7095655B2 (en) 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
ITMI20041927A1 (it) * 2004-10-12 2005-01-12 Atmel Corp Sistema e metodo pee evitare l'offset e ridurre il footprint di una memoria non volatile
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US7257025B2 (en) * 2004-12-09 2007-08-14 Saifun Semiconductors Ltd Method for reading non-volatile memory cells
EP1831892A4 (de) * 2004-12-23 2009-06-10 Atmel Corp System zur durchführung von schnelltests während der einstellung von flash-referenzzellen
US8053812B2 (en) * 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
US8400841B2 (en) 2005-06-15 2013-03-19 Spansion Israel Ltd. Device to program adjacent storage cells of different NROM cells
US7184313B2 (en) 2005-06-17 2007-02-27 Saifun Semiconductors Ltd. Method circuit and system for compensating for temperature induced margin loss in non-volatile memory cells
EP1746645A3 (de) 2005-07-18 2009-01-21 Saifun Semiconductors Ltd. Speicherzellenanordnung mit sub-minimalem Wortleitungsabstand und Verfahren zu deren Herstellung
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7221138B2 (en) * 2005-09-27 2007-05-22 Saifun Semiconductors Ltd Method and apparatus for measuring charge pump output current
JP2007164934A (ja) * 2005-12-16 2007-06-28 Fujitsu Ltd 不揮発性半導体記憶装置
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
KR100772389B1 (ko) * 2006-01-12 2007-11-01 삼성전자주식회사 메모리 인식 장치
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US8253452B2 (en) 2006-02-21 2012-08-28 Spansion Israel Ltd Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
US7638835B2 (en) * 2006-02-28 2009-12-29 Saifun Semiconductors Ltd. Double density NROM with nitride strips (DDNS)
US7388781B2 (en) 2006-03-06 2008-06-17 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US8848442B2 (en) 2006-03-06 2014-09-30 Sandisk Il Ltd. Multi-bit-per-cell flash memory device with non-bijective mapping
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
ITMI20062211A1 (it) * 2006-11-17 2008-05-18 St Microelectronics Srl Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili
US7590001B2 (en) 2007-12-18 2009-09-15 Saifun Semiconductors Ltd. Flash memory with optimized write sector spares
US7778098B2 (en) * 2007-12-31 2010-08-17 Cypress Semiconductor Corporation Dummy cell for memory circuits
US20090219776A1 (en) 2008-02-29 2009-09-03 Xian Liu Non-volatile memory device with plural reference cells, and method of setting the reference cells
KR101055568B1 (ko) 2009-06-17 2011-08-08 한양대학교 산학협력단 플래시 메모리 장치의 센싱 회로 및 플래시 메모리 장치의 센싱 방법
US9424946B2 (en) * 2013-02-08 2016-08-23 Seagate Technology Llc Non-volatile buffering to enable sloppy writes and fast write verification
KR102111510B1 (ko) * 2014-04-10 2020-05-19 에스케이하이닉스 주식회사 전자 장치
US11822358B2 (en) * 2018-08-27 2023-11-21 Sigmasense, Llc. Drive-sense circuit to determine effects of different electrical characteristics on load
US11823739B2 (en) * 2020-04-06 2023-11-21 Crossbar, Inc. Physically unclonable function (PUF) generation involving high side programming of bits
US11727986B2 (en) * 2020-04-06 2023-08-15 Crossbar, Inc. Physically unclonable function (PUF) generation involving programming of marginal bits

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FR2599176A1 (fr) * 1986-05-23 1987-11-27 Eurotechnique Sa Memoire morte programmable electriquement
JPH02260298A (ja) * 1989-03-31 1990-10-23 Oki Electric Ind Co Ltd 不揮発性多値メモリ装置
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
EP0477369B1 (de) * 1989-06-12 1997-08-13 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
JPH0346197A (ja) * 1989-07-13 1991-02-27 Fujitsu Ltd 半導体記憶装置
FR2650109B1 (fr) * 1989-07-20 1993-04-02 Gemplus Card Int Circuit integre mos a tension de seuil ajustable
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Also Published As

Publication number Publication date
KR950020743A (ko) 1995-07-24
EP0656628B1 (de) 2003-04-09
JPH07192478A (ja) 1995-07-28
US5828601A (en) 1998-10-27
DE69432452T2 (de) 2004-03-11
TW302479B (de) 1997-04-11
EP0656628A2 (de) 1995-06-07
EP0656628A3 (de) 1995-08-09
JP3813640B2 (ja) 2006-08-23
KR100357444B1 (ko) 2003-01-24
JP2006196184A (ja) 2006-07-27

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US

8339 Ceased/non-payment of the annual fee