DE69514375D1 - Lichtemittierende diode mit einer aktiven schicht aus einer nitridverbindung der gruppe iii, mit vertikaler geometrie und längerer lebensdauer - Google Patents

Lichtemittierende diode mit einer aktiven schicht aus einer nitridverbindung der gruppe iii, mit vertikaler geometrie und längerer lebensdauer

Info

Publication number
DE69514375D1
DE69514375D1 DE69514375T DE69514375T DE69514375D1 DE 69514375 D1 DE69514375 D1 DE 69514375D1 DE 69514375 T DE69514375 T DE 69514375T DE 69514375 T DE69514375 T DE 69514375T DE 69514375 D1 DE69514375 D1 DE 69514375D1
Authority
DE
Germany
Prior art keywords
group iii
emitting diode
light
active layer
silicon carbide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69514375T
Other languages
English (en)
Other versions
DE69514375T2 (de
Inventor
Adam Edmond
E Bulman
Hua-Shuang Kong
Vladimir Dmitriev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Research Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Research Inc filed Critical Cree Research Inc
Application granted granted Critical
Publication of DE69514375D1 publication Critical patent/DE69514375D1/de
Publication of DE69514375T2 publication Critical patent/DE69514375T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
DE69514375T 1994-09-20 1995-09-19 Lichtemittierende diode mit einer aktiven schicht aus einer nitridverbindung der gruppe iii, mit vertikaler geometrie und längerer lebensdauer Expired - Lifetime DE69514375T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/309,251 US5523589A (en) 1994-09-20 1994-09-20 Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
PCT/US1995/011472 WO1996009653A1 (en) 1994-09-20 1995-09-19 Vertical geometry light emitting diode with group iii nitride active layer and extended lifetime

Publications (2)

Publication Number Publication Date
DE69514375D1 true DE69514375D1 (de) 2000-02-10
DE69514375T2 DE69514375T2 (de) 2000-06-21

Family

ID=23197389

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69514375T Expired - Lifetime DE69514375T2 (de) 1994-09-20 1995-09-19 Lichtemittierende diode mit einer aktiven schicht aus einer nitridverbindung der gruppe iii, mit vertikaler geometrie und längerer lebensdauer

Country Status (11)

Country Link
US (1) US5523589A (de)
EP (1) EP0783768B1 (de)
JP (1) JP3472305B2 (de)
KR (1) KR100384923B1 (de)
CN (1) CN1096120C (de)
AT (1) ATE188575T1 (de)
AU (1) AU3629495A (de)
CA (1) CA2200305C (de)
DE (1) DE69514375T2 (de)
ES (1) ES2143077T3 (de)
WO (1) WO1996009653A1 (de)

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